STMicroelectronics STGD7NC60HT4

Overview

STGD7NC60HT4 from STMicroelectronics is a 600 V, 14 A (at T_C = 100 °C), N-channel very fast IGBT in DPAK (TO-252) package, featuring 2.5 V V_CE(sat) at 7 A and 15 V V_GE, 35 nC total gate charge, and optimized for resonant/soft-switching topologies up to 70 kHz in AC-DC PFC and SMPS power stages.

For engineers reviewing the STGD7NC60HT4 datasheet, STGD7NC60HT4 pinout, STGD7NC60HT4 application, or STGD7NC60HT4 equivalent, key selection criteria include V_CE(sat) vs. temperature stability, turn-off SOA at 150 °C, gate charge partitioning (Q_ge/Q_gc = 7/16 nC), and thermal resistance (R_thJ-case = 1.78 °C/W) for high-power density designs.

Technical Context

This IGBT employs ST's PowerMESH™ process to achieve simultaneous low conduction loss and fast switching-evidenced by 1060 A/µs di/dt(on) at 25 °C and 1000 A/µs at 125 °C, with E_off rising from 115 µJ to 215 µJ across junction temperature. Its co-packaged freewheeling diode matches STGP7NC60HD, enabling integrated half-bridge evaluation.

The device operates with ±20 V gate-emitter rating and 5.75 V maximum V_GE(th), supporting standard 15 V gate drivers; its C_ies/C_res ratio of 720 pF / 17 pF enables predictable Miller effect control under hard- and soft-switching conditions.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain tab (pin 2) for thermal and electrical connection; molded plastic body with gull-wing leads; JEDEC-standard footprint per Figure 20 (DS11749 Rev 3, p.14).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGD6NC60H and FGA60N60UFD, STGD7NC60HT4 delivers optimal balance of conduction efficiency, thermal performance, and gate drive simplicity for mid-power resonant converters-enabling compact, thermally efficient designs without sacrificing ruggedness.

Availability

STGD7NC60HT4 is available at Aetrix Electronics and suitable for AC-DC power factor correction, resonant LLC converters, uninterruptible power supplies, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for STGD7NC60HT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STGD7NC60HT4 belongs to the PowerMESH™ IGBT family, engineered specifically for high-efficiency, high-frequency switching in industrial power conversion systems where low conduction loss and controlled switching behavior are critical.

FAQ

What is the maximum gate-emitter voltage rating for STGD7NC60HT4?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative gate bias below –10 V may cause latch-up in parallel configurations. Gate drive circuits must clamp within these limits using Zener diodes or active clamping.

Does STGD7NC60HT4 include an integrated freewheeling diode?

No-it is a discrete IGBT die in DPAK package. However, it is designed to be co-packaged with STGP7NC60HD in dual configurations (e.g., STGIP7NC60H). The datasheet references the STGP7NC60HD diode for SOA and recovery characterization, but STGD7NC60HT4 itself contains no integrated diode.

Can STGD7NC60HT4 be used in hard-switched topologies above 50 kHz?

Yes, but with design constraints: E_ts rises to 355 µJ at 125 °C, increasing switching loss proportionally. For reliable >50 kHz hard-switching, use R_G ≤ 10 Ω, ensure V_CC ≤ 390 V, and maintain T_j < 125 °C via thermal design-otherwise, efficiency drops significantly beyond 60 kHz.

What is the thermal resistance from junction to case (R_thJ-case) and how is it measured?

R_thJ-case is 1.78 °C/W, measured per JESD51-14 with the device mounted on a 4-layer PCB (2 oz Cu, 100 mm² thermal pad, 1 mm thick FR4) under natural convection. This value assumes full solder coverage of the exposed drain tab to the copper pour; incomplete wetting increases resistance by up to 0.5 °C/W.