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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGF10H60DF

Name: STGF10H60DF
Brand: STMicroelectronics
SKU: STGF10H60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGF10H60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3 Full Pack

Datasheet:: STGF10H60DF.pdf

Description:: IGBT TRENCH FS 600V 20A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGF10H60DF from STMicroelectronics is a 600 V, 10 A trench-gate field-stop IGBT with integrated ultrafast soft-recovery antiparallel diode in TO-220FP package. It delivers 1.95 V typical V_CE(sat) at 10 A/25 °C, 107 ns typical reverse recovery time (T_J = 25 °C), and 5 μs short-circuit withstand capability - optimized for high-frequency PFC and motor control inverters operating up to 100 kHz.

For engineers reviewing the STGF10H60DF datasheet, STGF10H60DF pinout, STGF10H60DF application, or STGF10H60DF equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, low R_thJC of 5 °C/W (IGBT), and tight parameter distribution enabling consistent thermal and switching performance across production batches.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction and switching losses - achieving 83 μJ typical turn-on energy and 140 μJ typical turn-off energy at 400 V, 10 A, 175 °C junction temperature. Its integrated diode features soft recovery (Q_rr = 120 nC, I_rrm = 2.24 A) and low forward voltage (V_F = 1.7 V @ 10 A, 25 °C).

The device operates across –55 °C to +175 °C junction temperature range with ±20 V gate-emitter rating and supports gate drive with 10 Ω external resistor for controlled 19.5 ns turn-on delay and 103 ns turn-off delay. Its 2.5 kV RMS insulation rating enables use in isolated high-voltage topologies without additional creepage reinforcement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - maximum blocking voltage under zero gate bias, suitable for 400 V DC bus applications with 50 % safety margin.
I_C (T_C = 100 °C)	10 A - continuous collector current derated for thermal management in compact heatsink designs.
V_CE(sat) (10 A, 25 °C)	1.50–1.95 V - low saturation voltage minimizes conduction loss in high-duty-cycle PFC stages.
t_sc	3–5 μs - short-circuit withstand time enables robust overcurrent protection without desaturation circuitry.
R_thJC (IGBT)	5 °C/W - low junction-to-case thermal resistance allows direct mounting to heatsink for efficient power dissipation.
Q_rr	120 nC (25 °C) / 362 nC (175 °C) - quantified diode recovery charge informs snubber sizing and EMI filter design.
E_off	140 μJ (25 °C) / 214 μJ (175 °C) - turn-off energy directly impacts thermal stress during hard-switching operation.

Pinout & Package

STGF10H60DF uses TO-220FP (Full-Pak) package: insulated plastic case with metal tab acting as collector terminal; no separate isolation washer required. Package height is 10.0–10.4 mm, footprint compatible with standard TO-220 mounting holes (3.0–3.2 mm diameter).

Pin/Terminal	Circuit Role	Design Meaning
1 (Tab)	Collector (C)	Exposed metal tab serves as primary heat path and high-current collector node; electrically isolated from heatsink via molded plastic body.
2	Emitter (E)	Low-inductance emitter connection; referenced to system ground in half-bridge configurations.
3	Gate (G)	Control input requiring ≤±20 V drive; gate charge Q_g = 57 nC dictates driver strength requirement (e.g., ≥2 A peak for <100 ns rise time).

Key Features

Feature	Design Value
Trench gate field-stop structure	Enables simultaneous optimization of V_CE(sat) and switching speed - critical for >50 kHz PFC and servo drives.
Positive V_CE(sat) temperature coefficient	Ensures current sharing stability when paralleling multiple devices without active current balancing circuits.
Ultrafast soft-recovery antiparallel diode	Reduces voltage overshoot and EMI during freewheeling, eliminating need for external snubbers in many 3-phase inverter designs.
2.5 kV RMS insulation rating	Permits direct mounting on grounded heatsinks in Class I safety systems without additional isolation hardware.
Tight parameter distribution	Minimizes binning requirements and simplifies thermal modeling across production lots for industrial OEMs.

Applications

Motor Control Inverters

Industrial UPS Systems

Use Scenario: 3-phase 7.5 kW servo drive operating at 16 kHz PWM frequency with forced-air cooling.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles bidirectional current flow with integrated diode providing freewheeling path.

Use Value: Low E_off (140 μJ) and soft diode recovery reduce heatsink size by 35 % compared to legacy 600 V IGBTs.

Use Scenario: Online double-conversion UPS with 400 V DC link and 50/60 Hz output, requiring high reliability over 10-year service life.

IC Role / Device Role / Timing Role: Output stage switch in inverter module; conducts full load current during battery backup mode.

Use Value: 175 °C max junction temperature and 5 μs short-circuit rating enable fault-tolerant operation without immediate shutdown.

Active PFC Boost Converters

EV Onboard Charger Stages

Use Scenario: 3.3 kW single-phase PFC front-end with interleaved boost topology and digital control.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM); commutates at 65–100 kHz with 0.5 duty cycle.

Use Value: 1.95 V V_CE(sat) and 107 ns t_rr achieve >98.2 % efficiency at full load while meeting EN 61000-3-2 harmonic limits.

Use Scenario: Bidirectional AC/DC converter in 6.6 kW EV onboard charger supporting both grid-to-battery and vehicle-to-grid (V2G) modes.

IC Role / Device Role / Timing Role: Unidirectional switch in unidirectional PFC stage; rated for 100,000+ thermal cycles per lifetime.

Use Value: R_thJC = 5 °C/W and 10 A I_C @ 100 °C allow compact thermal design meeting ISO 16750-4 automotive ambient requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 600 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP10H60DF	TO-220 (non-isolated tab); R_thJC = 1.3 °C/W (IGBT); no built-in insulation.	Requires insulating washer and larger heatsink area; preferred for cost-sensitive non-safety-critical designs.	Select when board-level isolation is already implemented and thermal budget permits higher junction temperature rise.
STGB10H60DF	D²PAK (TO-263); R_thJC = 1.3 °C/W (IGBT); surface-mount package with exposed drain pad.	Suitable for automated assembly and space-constrained PCBs; lower profile but requires thermal vias for effective heat transfer.	Choose for high-volume SMT production where reflow compatibility and board real estate are prioritized over mechanical ruggedness.

Compared with STGP10H60DF and STGB10H60DF, STGF10H60DF uniquely combines TO-220FP's mechanical robustness, 2.5 kV insulation, and mid-tier thermal resistance - making it optimal for field-serviceable industrial inverters where safety certification and serviceability outweigh SMT or lowest-R_thJC priorities.

Availability

STGF10H60DF is available at Aetrix Electronics and suitable for motor control inverters, industrial UPS systems, and active PFC converters requiring stable component supply across multi-year production programs.

Supply support for STGF10H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGF10H60DF belongs to ST's H-series IGBT portfolio - engineered specifically for high-efficiency, high-frequency power conversion in industrial motor drives, UPS, and renewable energy systems.

FAQ

What is the maximum gate drive voltage for STGF10H60DF?

The absolute maximum gate-emitter voltage is ±20 V DC, with transient rating up to ±30 V for ≤100 ns pulses. Operation above +15 V or below –10 V does not improve performance and risks gate oxide degradation. Recommended gate drive is +15 V / –5 V to ensure fast, reliable switching while maintaining long-term reliability.

Does STGF10H60DF require a negative gate voltage for turn-off?

No, STGF10H60DF is fully functional with 0 V turn-off bias, but applying –5 V improves noise immunity and reduces Miller-induced false turn-on risk in high-dv/dt environments. The device's V_GE(th) range (5–7 V) ensures robust turn-on margin even with gate drive tolerances and PCB trace inductance.

How does the integrated diode differ from standard FRDs?

Its ultrafast soft-recovery diode achieves 107 ns t_rr with low I_rrm (2.24 A) and softness factor >1.8 - minimizing voltage spikes and EMI during reverse recovery. Unlike fast recovery diodes, it is monolithically integrated with matched thermal characteristics, eliminating thermal cycling mismatch in high-power modules.

Can STGF10H60DF be paralleled with other IGBTs in the same series?

Yes - its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution (±5 % V_CE(sat), ±8 % Q_g) enable stable current sharing without external emitter resistors. Parallel operation requires matched gate drive layout, identical heatsink contact pressure, and thermal interface material thickness within ±10 % tolerance.

STGF10H60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 20 A

Current - Collector Pulsed (Icm):: 40 A

Vce(on) (Max) @ Vge, Ic:: 1.95V @ 15V, 10A

Power - Max:: 30 W

Switching Energy:: 83µJ (on), 140µJ (off)

Input Type:: Standard

Gate Charge:: 57 nC

Td (on/off) @ 25°C:: 19.5ns/103ns

Test Condition:: 400V, 10A, 10Ohm, 15V

Reverse Recovery Time (trr):: 107 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STGF10H60DF FAQ

1.How can I place an order for STGF10H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGF10H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGF10H60DF reliable?

The price and inventory of STGF10H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGF10H60DF is usually 5 days.

3.What payment methods are accepted for STGF10H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGF10H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGF10H60DF?

STGF10H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGF10H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGF10H60DF?

For technical support, including STGF10H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGF10H60DF requirements.

6.How does Aetrix verify that STGF10H60DF is sourced from the original manufacturer or authorized distributors?

All STGF10H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGF10H60DF meets industry standards.

7.What is the process for return or replacement of STGF10H60DF?

All STGF10H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGF10H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGF10H60DF part is unused and in its original packaging.

Return procedure for STGF10H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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