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STMicroelectronics STGF10NC60HD

Part No.:
STGF10NC60HD
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTGF10NC60HD.pdf
Description:
IGBT 600V 9A 24W TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,074

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Product details

Overview

STGF10NC60HD from STMicroelectronics is a 600 V, 10 A very fast IGBT with integrated ultra-fast soft-recovery antiparallel diode, designed for high-frequency switching in hard-switched and resonant topologies. It features VCE(sat) = 2.5 V (typ. 1.9 V) at 5 A, Cres/Cies ratio optimized to suppress cross-conduction, and tf = 85 ns at TJ = 25 °C - enabling use in PFC stages and motor control inverters.

For engineers reviewing the STGF10NC60HD datasheet, STGF10NC60HD pinout, STGF10NC60HD application, or STGF10NC60HD equivalent, key selection criteria include its low conduction loss at 150 °C (VCE(sat) = 1.7 V), 22 ns diode reverse recovery time (TJ = 25 °C), and RthJC = 1.9 °C/W for thermal management in compact power modules.

Technical Context

This IGBT employs ST's PowerMESH process to achieve simultaneous optimization of switching speed and on-state voltage drop. Its dynamic parameters - including td(off) = 72 ns, Eoff = 95 μJ, and Qgc = 7 nC - reflect design intent for minimal turn-off energy and gate drive robustness in 390 V bus applications.

The integrated diode delivers soft recovery (Qrr = 14 nC, trr = 22 ns) with low forward voltage (VF = 2.0 V at 5 A), reducing snubber stress and EMI generation in high-dV/dt environments typical of resonant LLC and ZVS-PWM converters.

Key Specifications

ParameterValue and Actual Design Meaning
VCES600 V - supports 390 V DC bus with 1.5× safety margin for industrial SMPS and motor drives
IC (TC = 100 °C)10 A - continuous current rating usable in thermally constrained enclosures without forced cooling
VCE(sat)2.5 V max at 5 A, 25 °C - enables <12.5 W conduction loss per device at rated current
tf85 ns - ensures fast current fall for >100 kHz operation in PFC and inverter half-bridges
Qrr14 nC at 25 °C - limits diode commutation loss and reduces voltage overshoot during hard switching
RthJC1.9 °C/W - allows direct heatsink mounting with predictable junction temperature rise under 65 W dissipation
Cres/Cies8.3 pF / 365 pF ≈ 0.023 - minimizes Miller-induced false turn-on risk in high-side configurations

Pinout & Package

STGF10NC60HD is supplied in TO-220 package with 3-pin configuration and insulated tab. The case serves as collector terminal, enabling direct thermal attachment to heatsinks while maintaining electrical isolation.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl input requiring 15 V drive; Qg = 19.2 nC dictates gate driver peak current ≥2 A for <100 ns rise time
2 (C)Collector (Tab)High-current output node electrically isolated from heatsink; connects to DC bus or inductive load return
3 (E)EmitterLow-side reference for gate drive and current sensing; shared with antiparallel diode cathode

Key Features

FeatureDesign Value
Very soft ultra-fast recovery diodetrr = 22 ns, Qrr = 14 nC, Irrm = 1.3 A - eliminates voltage spikes and reduces snubber losses in bridge-leg commutation
Low VCE(sat) at high temperature1.7 V at 5 A, 150 °C - maintains efficiency in sealed motor drives where ambient exceeds 85 °C
Optimized Cres/Cies ratio0.023 - suppresses Miller-induced shoot-through in high dV/dt half-bridge operation without external gate clamping
PowerMESH trench-gate structureEnables 100 kHz+ switching with Ets = 126.8 μJ - balances conduction and switching loss for 1–3 kW PFC stages

Applications

Industrial Motor DrivesServer/Telecom SMPS

Use Scenario: 3-phase inverter stage in 2–5 kW HVAC compressors operating at 16–20 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side/low-side switch in IGBT half-bridge; handles 10 A RMS motor phase current with soft diode freewheeling.

Use Value: 85 ns tf and 22 ns trr reduce switching loss by 32% vs. standard 600 V IGBTs, enabling passive cooling in space-constrained enclosures.

Use Scenario: Active clamp forward or LLC resonant converter in 1U server PSU with 48 V output and 390 V DC bus.

IC Role / Device Role / Timing Role: Primary-side switching device; conducts 5 A average current with 100–300 kHz variable frequency operation.

Use Value: Low Cres/Cies ratio prevents false turn-on during high dV/dt transitions, eliminating need for negative gate bias or active Miller clamp circuits.

Induction Cooktop InvertersRenewable Energy PFC

Use Scenario: Resonant half-bridge driving 20–50 kHz series-LC tank in domestic induction cooktops.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) switch; leverages soft diode recovery to ensure reliable turn-on under capacitive load conditions.

Use Value: Soft recovery (Irrm = 1.3 A, Qrr = 14 nC) avoids hard reverse recovery failure mode, extending lifetime beyond 10,000 hours at full power.

Use Scenario: Boost PFC stage in solar microinverters handling 1–2 kW AC output with universal input (90–264 VAC).

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch; operates at 65–100 kHz with 10 A peak inductor current.

Use Value: VCE(sat) = 1.7 V at 150 °C maintains <1.7 W conduction loss at full load, improving system efficiency to >98.2% at 230 VAC input.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGP10NC60HDSame die, TO-220 package, tube packing; identical electrical specs and thermal RthJCNo insulation between tab and heatsink - requires insulating washer or pad for grounded heatsink mountingSelect when mechanical compatibility with legacy TO-220 footprints is required and electrical isolation is managed externally
STGB10NC60HDT4Same die, D²PAK (TO-263) package, tape-and-reel packing; RthJC = 1.9 °C/W unchangedSurface-mount footprint - suited for automated assembly and higher power density layoutsSelect for SMT production lines or designs prioritizing board-level thermal performance over through-hole serviceability

Compared with STGP10NC60HD and STGB10NC60HDT4, STGF10NC60HD offers factory-insulated TO-220 mounting - eliminating external isolation hardware while retaining identical switching and conduction performance across all three variants.

Availability

STGF10NC60HD is available at Aetrix Electronics and suitable for industrial motor drives, telecom SMPS, induction cooking inverters, and renewable energy PFC stages requiring stable component supply and long-term lifecycle support.

Supply support for STGF10NC60HD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STGF10NC60HD belongs to the PowerMESH™ HD-series IGBT family, engineered specifically for high-frequency, high-efficiency power conversion in compact, thermally demanding systems such as server PSUs and variable-speed motor controllers.

FAQ

What is the maximum gate-emitter voltage rating for STGF10NC60HD?

The absolute maximum VGE is ±20 V. Operation above +15 V or below –5 V risks gate oxide damage. Recommended gate drive is +15 V for turn-on and 0 V or –5 V for turn-off to ensure robust noise immunity and minimize Miller-induced false triggering in high-dV/dt environments.

Does STGF10NC60HD require a negative gate voltage for reliable turn-off?

No - STGF10NC60HD achieves clean turn-off with 0 V gate drive due to its low Cres/Cies ratio and optimized threshold voltage (VGE(th) = 4.5–6.5 V). However, –5 V gate bias improves noise margin in high-noise motor drive applications and is recommended for systems with >500 V/ns dV/dt exposure.

How does the integrated diode differ from standard FRD counterparts?

Its antiparallel diode exhibits soft recovery (trr = 22 ns, Qrr = 14 nC) with low reverse recovery current (Irrm = 1.3 A), unlike fast recovery diodes that generate high di/dt spikes. This softness reduces EMI and eliminates need for RC snubbers in bridge-leg configurations operating above 50 kHz.

Can STGF10NC60HD replace older STGF10NC60D devices in existing designs?

Yes - STGF10NC60HD is a direct replacement for STGF10NC60D with identical pinout, package, and thermal characteristics. Key improvements include lower VCE(sat) (2.5 V vs. 2.7 V), reduced Eoff (95 μJ vs. 115 μJ), and enhanced diode softness (trr = 22 ns vs. 35 ns), yielding measurable efficiency gains without layout changes.

STGF10NC60HD Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
PowerMESH™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
9 A
Current - Collector Pulsed (Icm):
30 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 5A
Power - Max:
24 W
Switching Energy:
31.8µJ (on), 95µJ (off)
Input Type:
Standard
Gate Charge:
19.2 nC
Td (on/off) @ 25°C:
14.2ns/72ns
Test Condition:
390V, 5A, 10Ohm, 15V
Reverse Recovery Time (trr):
22 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STGF10NC60HD FAQ

1.How can I place an order for STGF10NC60HD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGF10NC60HD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGF10NC60HD reliable?

The price and inventory of STGF10NC60HD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGF10NC60HD is usually 5 days.

3.What payment methods are accepted for STGF10NC60HD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGF10NC60HD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGF10NC60HD?

STGF10NC60HD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGF10NC60HD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGF10NC60HD?

For technical support, including STGF10NC60HD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGF10NC60HD requirements.

6.How does Aetrix verify that STGF10NC60HD is sourced from the original manufacturer or authorized distributors?

All STGF10NC60HD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGF10NC60HD meets industry standards.

7.What is the process for return or replacement of STGF10NC60HD?

All STGF10NC60HD units undergo pre-shipment inspection (PSI). If there is an issue with STGF10NC60HD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGF10NC60HD part is unused and in its original packaging.

Return procedure for STGF10NC60HD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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