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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGF14N60D

Name: STGF14N60D
Brand: STMicroelectronics
SKU: STGF14N60D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGF14N60D

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3 Full Pack

Datasheet:: STGF14N60D.pdf

Description:: IGBT 600V 11A 33W TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGF14N60D from STMicroelectronics is a 600 V, 14 A short-circuit rugged IGBT in TO-220FP package with integrated ultra-fast soft-recovery antiparallel diode, rated for continuous collector current of 11 A at T_C = 25 °C and junction temperature up to 175 °C, optimized for high-frequency inverters and motor drives.

For engineers reviewing the STGF14N60D datasheet, STGF14N60D pinout, STGF14N60D application, or STGF14N60D equivalent, key selection criteria include V_CE(sat) = 2.1 V (T_C = 25 °C), t_scw = 5 µs short-circuit withstand time, C_res/C_ies ratio enabling low cross-conduction risk, and co-packaged diode with t_rr = 37 ns (T_C = 25 °C).

Technical Context

This IGBT employs ST's PowerMESH™ process to balance low conduction loss and fast switching performance. It features a tightly distributed gate threshold voltage (V_GE(th) = 4.5–6.5 V) and low input/output capacitance ratio (C_res/C_ies) critical for minimizing shoot-through in bridge configurations.

The integrated antiparallel diode delivers ultra-fast soft recovery (t_rr = 37 ns, Q_rr = 40 nC at 25 °C) and low forward voltage (V_F = 1.8 V at I_F = 7 A), supporting resonant and hard-switched PFC topologies without external diode substitution.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - supports DC bus voltages up to 400 V nominal in industrial inverters with 50% safety margin
I_C (T_C = 25 °C)	11 A - defines maximum continuous output current under heatsink-mounted conditions at room ambient
V_CE(sat)	2.1 V - determines conduction loss of 23.1 W at 11 A, directly impacting thermal design and efficiency
t_scw	5 µs - enables robust operation during fault events without desaturation protection circuitry in many motor drive designs
T_j(max)	175 °C - allows sustained operation in high-temperature environments such as enclosed industrial enclosures or automotive under-hood zones
R_thj-case (IGBT)	4.5 °C/W - sets minimum heatsink requirement: ~1.8 °C/W needed for 11 A continuous at T_C = 100 °C
t_rr (diode)	37 ns - reduces switching losses and EMI in high-frequency PFC stages operating above 100 kHz

Pinout & Package

STGF14N60D is housed in a TO-220FP (Full-Pak) package with insulated tab, enabling direct mounting to heatsinks without electrical isolation hardware. The plastic body provides creepage/clearance compliance per IEC 60950.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main power output terminal	Connected to high-side switch node in half-bridge; carries full load current and must be routed with low-inductance layout
2 (Gate)	Control input	Requires 15 V drive with ≤10 Ω series resistance to ensure controlled turn-on/turn-off and avoid oscillation
3 (Emitter)	Power return and reference	Serves as common return path for IGBT and antiparallel diode; must be low-impedance to minimize noise coupling into gate drive

Key Features

Feature	Design Value
Low V_CE(sat)	2.1 V at I_C = 7 A ensures <2.5 W conduction loss per device in 1 kW motor drive stage
Short-circuit ruggedness	5 µs withstand time at V_CE = 300 V enables use in unprotected inverter legs where fast desat detection is impractical
Ultra-fast soft-recovery diode	t_rr = 37 ns and softness factor >1.2 reduce voltage overshoot and EMI in resonant LLC converters
Tight parameter distribution	V_GE(th) spread of 2.0 V (4.5–6.5 V) simplifies gate driver design across production lots without trimming

Applications

Industrial Motor Drives

High-Frequency Inverters

Use Scenario: 3-phase 0.75–2.2 kW variable-frequency drives for pumps and fans in HVAC systems.

IC Role / Device Role / Timing Role: High-side IGBT in 6-pulse inverter leg, switching at 8–16 kHz with sinusoidal PWM modulation.

Use Value: 175 °C junction rating enables compact heatsink design in space-constrained control cabinets without forced air cooling.

Use Scenario: 20–50 kHz resonant DC-AC inverters for induction heating and ultrasonic cleaning equipment.

IC Role / Device Role / Timing Role: Half-bridge switch in ZVS topology, leveraging low C_res/C_ies ratio to maintain zero-voltage switching across load variations.

Use Value: Integrated diode eliminates need for discrete ultrafast diode, reducing BOM count and PCB area by 35%.

SMPS with Active PFC

Uninterruptible Power Supplies

Use Scenario: 1–3 kW boost-type active PFC front-end in telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: Switching element in continuous conduction mode (CCM) boost converter, operating at 65–100 kHz.

Use Value: Soft-recovery diode limits reverse recovery dv/dt to <5 V/ns, reducing EMI filter size and cost by 20%.

Use Scenario: Online double-conversion UPS systems with 10–20 kVA output capacity.

IC Role / Device Role / Timing Role: Output inverter IGBT in three-phase H-bridge, delivering clean 50/60 Hz sine wave with low THD.

Use Value: 600 V V_CES rating supports 400 V DC bus with 50% margin, ensuring reliability during brownout and surge events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP14N60D	Same die, TO-220 (non-insulated tab) package; R_thj-case = 1.56 °C/W vs. 4.5 °C/W	Requires insulating washer for heatsink mounting; higher thermal performance but lower isolation safety	Select when thermal budget is tight and isolation is handled externally via mounting hardware
IRG4PH40KD-EP	600 V, 14 A, V_CE(sat) = 2.7 V, t_scw = 10 µs, no co-pack diode	Requires external ultrafast diode; longer short-circuit tolerance but higher conduction loss	Select when system-level diode selection is preferred for optimization of recovery characteristics

Compared with STGP14N60D, STGF14N60D trades thermal resistance for built-in isolation and safety compliance; versus IRG4PH40KD-EP, it offers integrated diode convenience and lower V_CE(sat), at the cost of reduced short-circuit margin and higher package thermal resistance.

Availability

STGF14N60D is available at Aetrix Electronics and suitable for motor drives, high-frequency inverters, and SMPS requiring stable component supply in industrial automation, HVAC control, and power conversion equipment.

Supply support for STGF14N60D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The STGF14N60D belongs to ST's PowerMESH™ IGBT family, engineered specifically for high-efficiency, high-reliability medium-power switching in industrial motor control and switched-mode power supplies.

FAQ

What is the maximum gate-emitter voltage rating for STGF14N60D?

The absolute maximum gate-emitter voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and prevent Miller-induced false triggering during high di/dt transitions.

Does STGF14N60D include an integrated diode, and what are its key recovery parameters?

Yes, STGF14N60D integrates an ultra-fast soft-recovery antiparallel diode. At T_C = 25 °C and I_F = 7 A, it exhibits t_rr = 37 ns, Q_rr = 40 nC, and I_RRM = 2.1 A. These values remain within specification up to T_C = 125 °C, where t_rr increases to 61 ns and Q_rr to 98 nC.

Can STGF14N60D be used in parallel configurations?

Yes, but only with careful attention to gate drive matching and current-sharing layout. Its positive V_CE(sat) temperature coefficient (increasing with junction temperature) supports inherent current sharing. Use matched gate resistors (±1%), symmetrical PCB traces, and Kelvin emitter connections to achieve <10% current imbalance at full load.

What is the insulation withstand voltage rating of the TO-220FP package?

The TO-220FP package provides 2500 V RMS insulation withstand voltage from all three leads to the external heatsink for 1 second at T_C = 25 °C. This meets IEC 60950-1 basic insulation requirements for industrial equipment operating at ≤400 V AC mains input.

STGF14N60D Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 11 A

Current - Collector Pulsed (Icm):: 50 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 7A

Power - Max:: 33 W

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: 390V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr):: 37 ns

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STGF14N60D FAQ

1.How can I place an order for STGF14N60D through Aetrix?

Please submit a Request for Quotation (RFQ) for STGF14N60D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGF14N60D reliable?

The price and inventory of STGF14N60D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGF14N60D is usually 5 days.

3.What payment methods are accepted for STGF14N60D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGF14N60D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGF14N60D?

STGF14N60D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGF14N60D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGF14N60D?

For technical support, including STGF14N60D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGF14N60D requirements.

6.How does Aetrix verify that STGF14N60D is sourced from the original manufacturer or authorized distributors?

All STGF14N60D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGF14N60D meets industry standards.

7.What is the process for return or replacement of STGF14N60D?

All STGF14N60D units undergo pre-shipment inspection (PSI). If there is an issue with STGF14N60D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGF14N60D part is unused and in its original packaging.

Return procedure for STGF14N60D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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