Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGF14NC60KD

Name: STGF14NC60KD
Brand: STMicroelectronics
SKU: STGF14NC60KD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGF14NC60KD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3 Full Pack

Datasheet:: STGF14NC60KD.pdf

Description:: IGBT 600V 11A 28W TO220FP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:719

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGF14NC60KD from STMicroelectronics is a 14 A, 600 V short-circuit rugged IGBT in TO-220FP package, featuring 2.5 V V_CE(sat) at 7 A/25 °C, 10 μs short-circuit withstand time at V_CE = 300 V/T_J = 125 °C, and ultra-fast soft-recovery antiparallel diode with 37 ns t_rr. It targets high-frequency resonant inverters and PFC stages in industrial SMPS.

For engineers reviewing the STGF14NC60KD datasheet, STGF14NC60KD pinout, STGF14NC60KD application, or STGF14NC60KD equivalent, this device supports hard-switched and ZVS/ZCS topologies requiring low conduction loss, controlled switching energy (E_on = 82 μJ, E_off = 155 μJ), and robust diode recovery under 100 A/μs di/dt.

Technical Context

This IGBT employs ST's PowerMESH process to optimize trade-offs between V_CE(sat) and switching speed-achieving 22.5 ns t_d(on), 60 ns t_r(Voff), and 75 ns t_f at 7 A/390 V with 10 Ω gate resistance. Its low C_res/C_ies ratio (15.5 pF / 760 pF ≈ 0.02) suppresses cross-conduction risk in bridge configurations.

The integrated diode delivers 1.8 V forward voltage at 7 A/25 °C and exhibits soft reverse recovery with Q_rr = 40 nC and I_rrm = 2.1 A, enabling reliable operation in phase-shifted full-bridge and LLC resonant converters without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage for 600 V bus applications like industrial AC drives and telecom rectifiers.
I_C (T_C = 100 °C)	7 A - Continuous current rating at case temperature 100 °C, defining thermal design margin in enclosed heatsink environments.
V_CE(sat)	2.5 V @ 7 A/25 °C - Low on-state loss enabling <1.75 W conduction loss at 7 A, critical for efficiency in high-duty-cycle PFC stages.
t_scw	10 μs @ V_CE = 300 V/T_J = 125 °C/R_G = 10 Ω - Short-circuit ruggedness allowing safe fault handling in motor drive inverters without immediate desat protection.
t_rr	37 ns @ I_F = 5 A/V_R = 40 V/di/dt = 100 A/μs - Ultra-fast soft recovery minimizing voltage overshoot and EMI in high-frequency synchronous rectification.
E_off	155 μJ @ V_CE = 390 V/I_C = 7 A/R_G = 10 Ω - Predictable turn-off energy enabling accurate thermal modeling for 100–300 kHz resonant converter designs.
R_thJC (IGBT)	4.5 °C/W - Junction-to-case thermal resistance for TO-220FP package, directly determining heatsink sizing for 28 W P_TOT dissipation limit.

Pinout & Package

STGF14NC60KD uses TO-220FP (Full-Pak) package with insulated tab, offering creepage/clearance compliance for reinforced isolation. The plastic body isolates the collector (Tab) from mounting surface, eliminating need for insulating washers.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance MOS-controlled terminal; requires 15 V drive for full enhancement and ±20 V absolute max rating.
2 (C)	Collector (Tab)	Electrically connected to metal tab; serves as main power output node and thermal path to heatsink.
3 (E)	Emitter	Reference node for gate drive and load return; carries full switched current and diode reverse recovery charge.

Key Features

Feature	Design Value
Low V_CE(sat)	2.5 V @ 7 A/25 °C reduces conduction losses by >20% vs. standard 600 V IGBTs, improving PFC efficiency above 98% at full load.
Soft ultra-fast diode	37 ns t_rr with 2.1 A I_rrm and no current tail enables clean zero-voltage switching in LLC half-bridge without snubber networks.
Low C_res/C_ies ratio	0.02 (15.5 pF / 760 pF) minimizes Miller-induced shoot-through in H-bridge legs, relaxing gate driver slew rate requirements.
10 μs short-circuit withstand	Validated at 300 V/125 °C/10 Ω R_G, supporting fault-tolerant motor control without active desat detection circuitry.

Applications

Industrial SMPS PFC Stage

Resonant Inverter for Induction Heating

Use Scenario: Active boost PFC front-end in 1–3 kW telecom rectifiers operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter, synchronized to line frequency.

Use Value: 2.5 V V_CE(sat) limits conduction loss to <1.75 W at 7 A, while 37 ns diode t_rr prevents reverse recovery losses during zero-current switching transitions.

Use Scenario: Half-bridge switch in 150–300 kHz induction heating inverters driving series-resonant tanks.

IC Role / Device Role / Timing Role: High-side/low-side switching element enabling zero-voltage switching (ZVS) via precise dead-time control.

Use Value: 10 μs short-circuit rating allows safe operation during transient overloads; soft diode eliminates voltage spikes that damage tank capacitors.

Brushless DC Motor Drive

UPS Inverter Output Stage

Use Scenario: 3-phase inverter stage in 500 W–2 kW BLDC drives for HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: Bridge-leg switch controlling motor phase current commutation at 8–20 kHz PWM carrier.

Use Value: 4.5 °C/W R_thJC enables compact heatsinking; low E_off (155 μJ) reduces thermal stress during frequent regenerative braking events.

Use Scenario: Double-conversion UPS output inverter delivering clean 50/60 Hz sine wave with <5% THD.

IC Role / Device Role / Timing Role: Final-stage power switch in full-bridge topology, modulated via SPWM or SVM techniques.

Use Value: 600 V V_CES supports 400 V DC bus with 20% margin; 10 μs t_scw ensures graceful shutdown during output short-circuit faults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP14NC60KD	TO-220 package (non-isolated tab), R_thJC = 1.56 °C/W, higher P_TOT = 80 W, but requires insulating hardware for floating heatsinks.	Better suited for open-frame industrial drives where heatsink isolation is managed externally.	Select when thermal performance outweighs isolation needs and board-level creepage is controlled.
STGB14NC60KDT4	D²PAK (TO-263) surface-mount package, same electrical specs, R_thJC = 1.56 °C/W, optimized for automated assembly and high-power density PCBs.	Ideal for space-constrained SMPS modules where through-hole TO-220FP footprint is prohibitive.	Choose for SMT production lines or compact power supplies needing lower profile and improved thermal coupling to copper planes.

Compared with STGP14NC60KD and STGB14NC60KDT4, STGF14NC60KD uniquely balances isolation safety (TO-220FP tab insulation), moderate thermal resistance (4.5 °C/W), and through-hole reliability-making it optimal for field-serviceable industrial power supplies and motor controllers.

Availability

STGF14NC60KD is available at Aetrix Electronics and suitable for industrial SMPS, resonant inverters, BLDC motor drives, and UPS systems requiring stable component supply across multi-year production cycles.

Supply support for STGF14NC60KD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT family, engineered specifically for high-efficiency, high-frequency power conversion in resonant and soft-switching topologies where low V_CE(sat) and fast soft-recovery diodes are essential.

FAQ

What is the maximum gate-emitter voltage rating for STGF14NC60KD?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below –10 V may cause latch-up in parallel configurations. Gate drive circuits must include clamping to stay within these limits.

Does STGF14NC60KD require a negative gate voltage for reliable turn-off?

No. Turn-off is fully achieved with 0 V gate drive; however, applying –5 V to –10 V improves noise immunity and reduces Miller-induced false turn-on in high-di/dt environments. The device's V_GE(th) of 4.5–6.5 V ensures robust immunity to spurious gate excursions.

Can STGF14NC60KD be used in parallel configurations?

Yes, but only with matched devices and individual gate resistors (≥10 Ω) to ensure current sharing. Its positive V_CE(sat) temperature coefficient (decreasing with rising T_J) supports inherent thermal balancing, unlike older NPT IGBTs with negative coefficients.

What is the thermal resistance from junction to ambient (R_thJA) for STGF14NC60KD?

R_thJA is 62.5 °C/W, measured on standard JEDEC test board (1-inch² 2-oz copper). This value applies only to natural convection; actual system R_thJA depends heavily on heatsink size, airflow, and PCB copper area. For thermal design, use R_thJC = 4.5 °C/W with heatsink interface resistance.

STGF14NC60KD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 11 A

Current - Collector Pulsed (Icm):: 50 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 7A

Power - Max:: 28 W

Switching Energy:: 82µJ (on), 155µJ (off)

Input Type:: Standard

Gate Charge:: 34.4 nC

Td (on/off) @ 25°C:: 22.5ns/116ns

Test Condition:: 390V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr):: 37 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STGF14NC60KD FAQ

1.How can I place an order for STGF14NC60KD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGF14NC60KD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGF14NC60KD reliable?

The price and inventory of STGF14NC60KD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGF14NC60KD is usually 5 days.

3.What payment methods are accepted for STGF14NC60KD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGF14NC60KD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGF14NC60KD?

STGF14NC60KD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGF14NC60KD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGF14NC60KD?

For technical support, including STGF14NC60KD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGF14NC60KD requirements.

6.How does Aetrix verify that STGF14NC60KD is sourced from the original manufacturer or authorized distributors?

All STGF14NC60KD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGF14NC60KD meets industry standards.

7.What is the process for return or replacement of STGF14NC60KD?

All STGF14NC60KD units undergo pre-shipment inspection (PSI). If there is an issue with STGF14NC60KD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGF14NC60KD part is unused and in its original packaging.

Return procedure for STGF14NC60KD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…