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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGF19NC60WD

Name: STGF19NC60WD
Brand: STMicroelectronics
SKU: STGF19NC60WD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGF19NC60WD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3 Full Pack

Datasheet:: STGF19NC60WD.pdf

Description:: IGBT 600V 14A 32W TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGF19NC60WD from STMicroelectronics is an N-channel 600V, 7A ultra-fast PowerMESH™ IGBT in TO-220FP package, featuring 2.5V max V_CE(sat) at 12A/25°C, 1180pF C_ies, and integrated ultra-soft antiparallel diode with 31ns trr at 25°C. It is engineered for high-frequency hard-switched and resonant topologies including PFC stages and SMPS primary-side switching.

For engineers reviewing the STGF19NC60WD datasheet, STGF19NC60WD pinout, STGF19NC60WD application, or STGF19NC60WD equivalent, key selection criteria include gate charge (53nC), thermal resistance (4°C/W j-case), soft recovery diode performance, switching energy (81µJ E_on @25°C), and 600V blocking capability under high di/dt conditions.

Technical Context

This IGBT employs ST's patented PowerMESH™ strip layout to achieve low C_res/C_ies ratio (26pF/1180pF ≈ 0.022), minimizing cross-conduction risk in bridge configurations. Its optimized "W"-suffix design targets operation above 50kHz with controlled tail current and reduced turn-off losses.

The integrated antiparallel diode delivers very soft reverse recovery (Q_rr = 30nC, Irrm = 2A @25°C) and exhibits minimal voltage overshoot during commutation. Dynamic parameters are characterized at V_CC = 390V, I_C = 12A, R_G = 10Ω, and V_GE = 15V per JEDEC-standard inductive load test circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600V - supports DC bus voltages up to 400V nominal with 50% safety margin in industrial PFC and inverter designs
V_CE(sat) max	2.5V @12A/25°C - enables low conduction loss in continuous 7A applications at T_C = 100°C
C_ies	1180pF - determines gate drive power requirement and influences Miller effect susceptibility
Q_g	53nC - defines minimum gate driver peak current (e.g., ≥5.3A for 10ns rise time) and drive loss
trr	31ns @25°C - ensures clean commutation with minimal voltage spike in hard-switched half-bridges
R_thj-case	4°C/W - allows 32W dissipation at ΔT = 128°C, supporting compact heatsink integration in space-constrained UPS
E_on	81µJ @25°C - quantifies energy loss during turn-on with standard 10Ω gate resistor and 390V bus

Pinout & Package

TO-220FP package: insulated backside, vertical mounting, 3-pin through-hole configuration with internal gate-emitter-collector terminal mapping. Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 15V logic-level signal; requires ≤±20V absolute rating compliance and 53nC total charge delivery
Pin 2 (Collector)	High-side power output	Carries switched 600V DC bus current; electrically connected to metal tab for thermal path to heatsink
Pin 3 (Emitter)	Power return / reference	Serves as common source node for gate drive return and current sensing; low-inductance layout critical for dV/dt immunity

Key Features

Feature	Design Value
Ultra-fast switching	td(off) = 90ns, tf = 43ns @25°C - enables >100kHz operation in ZVS/ZCS resonant converters
Low C_res/C_ies ratio	26pF/1180pF = 0.022 - suppresses Miller-induced false turn-on in high-side bridge legs
Soft-recovery co-pack diode	trr = 31ns, Q_rr = 30nC @25°C - reduces EMI and snubber stress in PFC boost diodes
Thermal robustness	R_thj-case = 4°C/W - supports 128°C junction-to-case delta at full 32W dissipation
ECOPACK® compliance	Lead-free second-level interconnect - meets RoHS and JEDEC JESD97 marking requirements

Applications

Motor Drive Inverter Stage

PFC Boost Converter

Use Scenario: 3-phase inverter driving 0.75–2.2kW induction motors in HVAC and industrial pumps.

IC Role / Device Role / Timing Role: High-side IGBT switch in 6-pulse bridge; operates at 8–16kHz PWM with soft-diode commutation.

Use Value: 2.5V V_CE(sat) and 31ns diode trr reduce conduction + switching loss by ~18% vs legacy 600V IGBTs at 10kHz.

Use Scenario: Active boost PFC front-end in 1–3kW server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; switches at 65–130kHz.

Use Value: Low C_res/C_ies ratio prevents shoot-through during zero-voltage transitions; 53nC Q_g enables efficient 100kHz gate drive.

SMPS Primary Switch

UPS Inverter Output Stage

Use Scenario: Forward or half-bridge topology in 500–1500W offline SMPS for medical and test equipment.

IC Role / Device Role / Timing Role: Primary-side power switch handling 390V DC bus; driven with 15V gate voltage and 10Ω series resistor.

Use Value: 81µJ E_on and 125µJ E_off at 390V/12A enable <92% efficiency at 100kHz with minimal heatsink volume.

Use Scenario: Double-conversion online UPS delivering clean 50/60Hz sine wave to critical loads.

IC Role / Device Role / Timing Role: Output H-bridge switch operating in SPWM mode at 4–8kHz fundamental with high-frequency carrier.

Use Value: Integrated soft diode eliminates need for external ultrafast diode; 4°C/W R_thj-case sustains 7A RMS output current without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH60UD	600V/10A, V_CE(sat) = 2.7V @12A, Q_g = 65nC, no co-pack diode	Requires external ultrafast diode; higher conduction loss but wider SOA	Preferred where ruggedness > frequency; not drop-in due to missing diode and higher Q_g
FGL60N60UFD	600V/60A, V_CE(sat) = 2.2V @48A, Q_g = 120nC, soft diode trr = 45ns	Higher current rating; larger die increases switching loss at same frequency	Used when paralleling is avoided and 60A peak surge capability is required

Compared with IRG4PH60UD and FGL60N60UFD, STGF19NC60WD offers lowest gate charge and integrated soft diode-making it optimal for compact, high-frequency PFC and SMPS where board space and EMI control are critical, though its 7A continuous rating limits use in high-current motor drives.

Availability

STGF19NC60WD is available at Aetrix Electronics and suitable for high-frequency motor controls, active PFC modules, and UPS inverter stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for STGF19NC60WD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The PowerMESH™ IGBT product line targets high-efficiency, high-frequency power conversion systems-including industrial motor drives, telecom PSUs, and renewable energy inverters-with emphasis on low-loss switching and integrated diode performance.

FAQ

What is the maximum gate-emitter voltage rating for STGF19NC60WD?

The absolute maximum V_GE is ±20V, as specified in Table 1 of the preliminary datasheet. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15V for turn-on and –5V to –10V for turn-off to ensure noise immunity and fast fall time.

Does STGF19NC60WD include an integrated freewheeling diode?

Yes-it features a monolithically integrated ultra-soft recovery antiparallel diode with trr = 31ns and Q_rr = 30nC at 25°C. This diode shares the same silicon die and thermal environment as the IGBT, enabling matched temperature behavior and eliminating discrete diode layout parasitics.

Can STGF19NC60WD be used in resonant LLC topologies?

Yes-the low C_res/C_ies ratio (0.022), soft diode recovery, and 125°C-rated 7A continuous current make it suitable for LLC primary-side switching up to 300kHz. However, gate drive must account for 53nC Q_g and ensure adequate dead-time to avoid overlap conduction.

What thermal interface material is recommended for TO-220FP mounting?

A thermally conductive, electrically insulating pad (e.g., Bergquist Sil-Pad 1000) or ceramic washer with thermal grease is recommended. The metal tab is internally connected to the collector, so isolation voltage rating and thermal resistance (<0.5°C/W typical with proper mounting pressure) must be verified per application safety standards.

STGF19NC60WD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 14 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 12A

Power - Max:: 32 W

Switching Energy:: 81µJ (on), 125µJ (off)

Input Type:: Standard

Gate Charge:: 53 nC

Td (on/off) @ 25°C:: 25ns/90ns

Test Condition:: 390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr):: 31 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STGF19NC60WD FAQ

1.How can I place an order for STGF19NC60WD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGF19NC60WD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGF19NC60WD reliable?

The price and inventory of STGF19NC60WD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGF19NC60WD is usually 5 days.

3.What payment methods are accepted for STGF19NC60WD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGF19NC60WD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGF19NC60WD?

STGF19NC60WD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGF19NC60WD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGF19NC60WD?

For technical support, including STGF19NC60WD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGF19NC60WD requirements.

6.How does Aetrix verify that STGF19NC60WD is sourced from the original manufacturer or authorized distributors?

All STGF19NC60WD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGF19NC60WD meets industry standards.

7.What is the process for return or replacement of STGF19NC60WD?

All STGF19NC60WD units undergo pre-shipment inspection (PSI). If there is an issue with STGF19NC60WD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGF19NC60WD part is unused and in its original packaging.

Return procedure for STGF19NC60WD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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