STMicroelectronics STGF20H65DFB2

Overview

STGF20H65DFB2 from STMicroelectronics is a 650 V, 20 A high-speed trench gate field-stop IGBT with co-packaged soft-recovery diode in TO-220FP package. It delivers low V_CE(sat) of 1.65 V (typ.) at I_C = 20 A and T_J = 25 °C, 175 °C maximum junction temperature, and fast switching with E_on = 265 µJ and E_off = 214 µJ (T_J = 25 °C) under 400 V/20 A/10 Ω gate drive. It is engineered for high-efficiency power conversion in solar inverters and UPS systems.

For engineers reviewing the STGF20H65DFB2 datasheet, STGF20H65DFB2 pinout, STGF20H65DFB2 application, or STGF20H65DFB2 equivalent, key selection criteria include its 3.3 °C/W IGBT junction-to-case thermal resistance, tight V_GE(th) distribution (5–7 V), minimized tail current, antiparallel diode's 215 ns trr (T_J = 25 °C), and positive V_CE(sat) temperature coefficient enabling inherent current sharing.

Technical Context

This HB2-series IGBT employs ST's proprietary trench gate field-stop structure optimized for conduction loss reduction at low-to-moderate currents and lower total switching energy. Its static characteristics feature a well-defined gate threshold voltage (5–7 V) and low leakage (I_CES ≤ 25 µA at 650 V), supporting robust gate control across industrial temperature ranges.

The integrated diode exhibits very fast and soft reverse recovery (trr = 215 ns typ., Qrr = 970 nC typ. at 25 °C), with dI_rr/dt up to 303 A/µs and low Err (293 µJ). Its thermal design leverages separate R_thJC values - 3.3 °C/W for IGBT and 5.8 °C/W for diode - enabling accurate dual-thermal-path modeling in heatsink-limited applications.

Key Specifications

Pinout & Package

STGF20H65DFB2 uses the TO-220FP (Full-Pak) package: insulated plastic case with metal tab electrically connected to emitter (pin 3), enabling direct mounting to heatsink without insulator. The package provides 2.5 kV_RMS isolation between leads and heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 650 V IGBT applications.

Compared with IXGN20N60B3 and IKW20N60T, STGF20H65DFB2 uniquely combines 650 V blocking, soft-recovery diode, and TO-220FP insulation - making it the only option among the three qualified for space-constrained, high-reliability 400 V+ solar and UPS inverters without external isolation or snubbers.

Availability

STGF20H65DFB2 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies (UPS), and industrial welding equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STGF20H65DFB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power discrete and analog ICs for industrial, automotive, and energy infrastructure markets.

This device belongs to ST's HB2-series high-speed IGBT family, designed specifically for high-efficiency, high-frequency power conversion in renewable energy and backup power systems where low conduction loss, soft switching, and thermal robustness are critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 20 kHz?

A 10 Ω gate resistor is validated per datasheet Figure 20 for 20 A/400 V operation at 25 °C, yielding td(on) = 16 ns and E_on = 265 µJ. Increasing R_G to 15 Ω raises E_on by ~22% and extends td(on) to ~22 ns - acceptable for 20 kHz if thermal margin allows, but not recommended above 15 Ω without recalculating junction temperature rise using R_thJC = 3.3 °C/W.

Can STGF20H65DFB2 be operated with V_GE = +12 V instead of +15 V?

Yes - V_GE(th) is specified 5–7 V, and V_CE(sat) increases only marginally from 1.65 V (15 V) to 1.72 V (12 V) at I_C = 20 A and 25 °C (per Figure 6 extrapolation). However, reduced overdrive lowers short-circuit ruggedness and increases sensitivity to gate noise; +15 V is strongly recommended for industrial reliability.

Is the TO-220FP metal tab electrically isolated from all pins?

No - the metal tab is internally connected to the emitter (pin 3), as confirmed by ST's package drawing (Figure 31) and insulation test specification (V_ISO = 2.5 kV_RMS measured from "all three leads" to tab). This requires electrical isolation between heatsink and circuit ground unless the emitter node is referenced to chassis ground.

How does diode performance change at 175 °C junction temperature?

At T_J = 175 °C, diode forward voltage drops to 1.3 V (IF = 20 A), trr increases to 330 ns, Qrr rises to 2772 nC, and Err climbs to 866 µJ - all confirmed in Table 6. These shifts increase conduction loss but maintain softness (dI_rr/dt = 244 A/µs), preserving EMI advantage over standard FRDs at elevated temperature.