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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGF30H60DF

Name: STGF30H60DF
Brand: STMicroelectronics
SKU: STGF30H60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGF30H60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3 Full Pack

Datasheet:: STGF30H60DF.pdf

Description:: IGBT 600V 60A 37W TO220FP

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Product details

Overview

STGF30H60DF from STMicroelectronics is a 600 V, 30 A trench gate field-stop IGBT with ultrafast soft-recovery antiparallel diode in TO-220FP package. It delivers 2.4 V V_CE(sat) at 30 A/175 °C, 3 µs short-circuit withstand time, and 0.75 mJ total switching energy at 25 °C - optimized for high-frequency PFC, UPS, and inverter stages requiring low conduction-switching trade-off.

For engineers reviewing the STGF30H60DF datasheet, STGF30H60DF pinout, STGF30H60DF application, or STGF30H60DF equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, 0.58 °C/W IGBT junction-to-case thermal resistance, and integrated diode with 110 ns trr and 136 nC Q_rr at 25 °C.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to simultaneously minimize conduction loss (V_CE(sat) = 2.4 V @ 30 A/175 °C) and switching loss (E_ts = 1.45 mJ @ 175 °C). Its gate threshold voltage (V_GE(th)) ranges 5–7 V with stable 0.9× normalization at −40 °C to 175 °C, enabling robust drive margin across industrial temperature range.

The monolithic antiparallel diode features soft reverse recovery (I_rrm = 2.5 A, Q_rr = 136 nC @ 25 °C), tightly coupled thermal path (R_thJC = 2.5 °C/W for diode), and VF = 2.0–2.3 V @ 30 A - eliminating need for external freewheeling diodes in bridge-leg configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - supports 400 V DC bus designs with 50 % voltage margin for transient overvoltage handling
I_C (T_C = 100 °C)	30 A - continuous output current capability at elevated case temperature without derating
V_CE(sat) @ 30 A/175 °C	2.4 V - low on-state loss enabling >98 % efficiency in 10–50 kHz PFC stages
t_sc	3–6 µs - enables reliable short-circuit protection using fixed-time blanking without desaturation sensing
trr / Q_rr	110 ns / 136 nC @ 25 °C - reduces diode-induced voltage spikes and EMI in hard-switched inverters
R_thJC (IGBT)	0.58 °C/W - allows 260 W power dissipation at T_C = 25 °C, supporting compact heatsink design
Q_g	105 nC - defines gate drive power requirement (≈1.6 W @ 15 kHz, 15 V swing) for MOSFET-compatible drivers

Pinout & Package

TO-220FP package (insulated tab, 3-pin vertical mount) with creepage ≥4 mm and thermal pad soldered to PCB ground plane for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main power output terminal	Electrically connected to metal tab - requires insulated mounting hardware and direct thermal interface to heatsink
Emitter	Power return and gate reference node	Serves as common reference for gate drive and current sensing; low-inductance layout critical for dV/dt immunity
Gate	Control input for IGBT turn-on/off	High-impedance MOS-controlled terminal; requires 15 V ±10 % drive and <10 Ω series resistance to control dv/dt and ringing

Key Features

Feature	Design Value
Trench gate field-stop structure	Enables simultaneous optimization of V_CE(sat) and E_off, achieving 0.75 mJ total switching loss at 25 °C
Positive V_CE(sat) temperature coefficient	Ensures inherent current sharing when paralleling multiple devices without external ballasting resistors
Ultrafast soft-recovery antiparallel diode	Eliminates need for discrete diode in half-bridge legs; reduces BOM count and layout area by 30 %
Tight parameter distribution	±10 % V_CE(sat) spread across production lot - simplifies thermal modeling and system-level derating
Short-circuit rated (3–6 µs)	Supports deterministic fault response using fixed-time blanking, reducing gate driver complexity vs. active desat detection

Applications

Industrial Motor Inverter

Server PSU PFC Stage

Use Scenario: 3-phase 7.5 kW motor drive operating at 8 kHz switching frequency with 400 V DC link.

IC Role / Device Role / Timing Role: Main switching device in 2-level inverter leg; handles bidirectional reactive current during regeneration.

Use Value: Low V_CE(sat) and soft diode reduce conduction losses by 18 % vs. planar IGBTs; tight parameter spread ensures balanced phase current sharing.

Use Scenario: Active boost PFC front-end in 3 kW telecom rectifier with 100 kHz operation and 96 % target efficiency.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; conducts during duty cycle, blocks during off-time.

Use Value: 0.58 °C/W R_thJC enables 75 °C max case temperature at full load; integrated diode eliminates reverse recovery cross-conduction loss.

Uninterruptible Power Supply

Solar String Inverter

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 380 VDC bus with <5 ms switchover.

IC Role / Device Role / Timing Role: Inverter-stage switch in full-bridge topology; commutates 50/60 Hz fundamental with high-frequency PWM carrier.

Use Value: 3 µs short-circuit rating allows fast fault shutdown without sacrificing reliability; soft diode minimizes EMI during zero-crossing transitions.

Use Scenario: 10 kW string inverter converting 600–1000 VDC PV input to grid-synchronized 230 VAC at 50 Hz.

IC Role / Device Role / Timing Role: DC-link switch in H-bridge inverter stage; operates at 16 kHz with sinusoidal PWM modulation.

Use Value: 600 V V_CES rating supports 1000 V PV arrays with safety margin; 175 °C max junction temperature enables outdoor enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP30H60DF	TO-220 (non-insulated tab); identical die but higher creepage risk in floating-ground systems	Requires insulating washer for heatsink mounting; unsuitable where isolation >4 mm is mandated	Select when cost sensitivity outweighs isolation requirements and mechanical mounting permits non-insulated tab
STGW30H60DF	TO-247 package; 0.45 °C/W R_thJC; 15 % lower E_off due to larger die area	Supports >50 A continuous current at T_C = 100 °C; preferred for >15 kW systems with forced-air cooling	Select when thermal headroom is constrained or parallel device count must be minimized

Compared with STGP30H60DF, STGF30H60DF provides certified insulation for safer floating-ground topologies, while STGW30H60DF delivers superior thermal performance and higher current scalability - choice depends on isolation compliance, heatsink capability, and system power density targets.

Availability

STGF30H60DF is available at Aetrix Electronics and suitable for industrial motor inverters, server PSU PFC stages, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STGF30H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGF30H60DF belongs to ST's H60DF high-speed IGBT family, engineered specifically for high-efficiency, high-frequency power conversion in PFC, UPS, and inverter applications demanding low-loss switching and robust short-circuit ruggedness.

FAQ

What is the maximum gate-emitter voltage rating for STGF30H60DF?

The absolute maximum V_GE is ±20 V per datasheet DS8709 Rev 4. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and −5 V to −10 V for turn-off to ensure fast, noise-immune switching and prevent Miller-induced false turn-on.

Does STGF30H60DF require an external freewheeling diode?

No. STGF30H60DF integrates a monolithic ultrafast soft-recovery antiparallel diode with 110 ns trr and 136 nC Q_rr at 25 °C. This diode is co-packaged and thermally coupled to the IGBT die, enabling full-bridge and inverter-leg operation without discrete diodes.

How does the positive V_CE(sat) temperature coefficient improve paralleling reliability?

As junction temperature rises, V_CE(sat) increases - causing hotter devices to naturally carry less current. This self-balancing behavior prevents thermal runaway during parallel operation, eliminating the need for emitter ballast resistors or complex current-sharing circuits.

What is the recommended gate resistor value for 16 kHz operation in a solar inverter?

For 16 kHz operation with 15 V gate drive, a 10 Ω gate resistor is validated in the datasheet (Figure 19 test circuit). This value achieves 160 ns t_d(off) and 60 ns t_f at 25 °C, balancing switching speed against gate oscillation and EMI - adjust downward to 6.8 Ω only if gate driver can source/sink >2 A peak current.

STGF30H60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 30A

Power - Max:: 37 W

Switching Energy:: 350µJ (on), 400µJ (off)

Input Type:: Standard

Gate Charge:: 105 nC

Td (on/off) @ 25°C:: 50ns/160ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: 110 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STGF30H60DF FAQ

1.How can I place an order for STGF30H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGF30H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGF30H60DF reliable?

The price and inventory of STGF30H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGF30H60DF is usually 5 days.

3.What payment methods are accepted for STGF30H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGF30H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGF30H60DF?

STGF30H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGF30H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGF30H60DF?

For technical support, including STGF30H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGF30H60DF requirements.

6.How does Aetrix verify that STGF30H60DF is sourced from the original manufacturer or authorized distributors?

All STGF30H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGF30H60DF meets industry standards.

7.What is the process for return or replacement of STGF30H60DF?

All STGF30H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGF30H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGF30H60DF part is unused and in its original packaging.

Return procedure for STGF30H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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