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STMicroelectronics STGF3NB60FD

Part No.:
STGF3NB60FD
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTGF3NB60FD.pdf
Description:
IGBT 600V 6A 25W TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,860

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Product details

Overview

STGF3NB60FD from STMicroelectronics is a 600 V, 3 A N-channel PowerMESH™ IGBT in TO-220FP package, optimized for high-frequency switching (<40 kHz) with low VCE(sat) (1.9 V typ. at 3 A, 25°C), low gate charge (16 nC typ.), and integrated anti-parallel diode. It serves as a main switch in resonant and hard-switching SMPS and PFC stages.

For engineers reviewing the STGF3NB60FD datasheet, STGF3NB60FD pinout, STGF3NB60FD application, or STGF3NB60FD equivalent, key selection criteria include VCE(sat) at 125°C, tail-current-inclusive Eoff (295 µJ at Tj = 125°C), Rthj-case (5 °C/W), diode reverse recovery (trr = 45 ns), and gate drive compatibility with ±20 V VGE.

Technical Context

This IGBT employs ST's patented strip layout for enhanced current handling and reduced switching losses. Its "F" suffix denotes frequency-optimized design, featuring low Qgc/Qge ratio (8/1.5 nC) and fast turn-off (td(off) = 230 ns at 125°C) to support <40 kHz operation in PFC and motor control inverters.

The integrated emitter-collector diode has verified trr = 45 ns and Qrr = 2.7 nC at 125°C, enabling synchronous rectification in bridge configurations without external diode addition. Thermal performance is defined by Rthj-case = 5 °C/W (TO-220FP), requiring heatsink interface resistance ≤ 0.5 °C/W for safe 3 A continuous operation.

Key Specifications

ParameterValue and Actual Design Meaning
VCE Rating600 V - supports 400 V DC bus designs with ≥50% voltage margin for transient clamping
VCE(sat)1.9 V (typ., 25°C) / 2.4 V (max., 125°C) - enables <1.5 W conduction loss at 3 A
Qg16 nC (typ.) - reduces gate driver power demand and enables 15 V single-supply drive
Eoff295 µJ (Tj = 125°C) - tail-current-inclusive loss critical for thermal design in continuous conduction mode
trr (Diode)45 ns (Tj = 125°C) - minimizes commutation loss during zero-voltage switching transitions
Rthj-case5 °C/W - mandates heatsink with ≤10 °C/W total thermal resistance for 150°C max junction temp at 3 A

Pinout & Package

STGF3NB60FD uses the TO-220FP package (full-pack, insulated tab), with 3 terminals: Collector (pin 1), Gate (pin 2), Emitter (pin 3). The insulated tab eliminates need for mounting insulator in heatsink-integrated designs.

Pin/TerminalCircuit RoleDesign Meaning
1 (Collector)Main high-side power terminalConnected to DC bus or transformer primary; rated for 600 V blocking and 24 A pulsed current
2 (Gate)Control inputHigh-impedance voltage-driven node; requires 15 V drive for full enhancement and 10 Ω series resistance for controlled dV/dt
3 (Emitter)Power return and referenceServes as common source for IGBT and anti-parallel diode; must be low-inductance path to minimize shoot-through risk

Key Features

FeatureDesign Value
PowerMESH™ strip layoutEnables 3 A continuous current at 100°C case temperature with uniform current distribution and reduced hot-spot formation
Low gate charge (Qg)16 nC typical allows use of low-power gate drivers (e.g., STGAP2SIC) without external boost circuitry
Integrated anti-parallel diodeVerified 45 ns trr and soft recovery enable bidirectional current handling in half-bridge legs without discrete diode
Short-circuit ratedWithstands 10 µs short-circuit at 480 V, enabling robust protection in motor drive fault conditions

Applications

Motor Control InverterActive PFC Stage

Use Scenario: 3-phase BLDC inverter for HVAC compressors operating at 20–35 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side IGBT switch in 6-pack configuration, controlling phase current via PWM with dead-time management.

Use Value: Low VCE(sat) and fast tf (305 ns) reduce conduction + switching losses, enabling >97% efficiency at 1.5 kW output.

Use Scenario: Boost-type active PFC in 1 kW server PSU with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter, synchronized to line frequency.

Use Value: Verified 295 µJ Eoff at 125°C ensures stable thermal behavior under full-load, high-temperature conditions.

Resonant LLC ConverterIndustrial SMPS Auxiliary Supply

Use Scenario: Primary-side switch in 300 W LLC resonant converter for telecom rectifier modules.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) enabled by low Qrr (2.7 nC) and fast diode recovery (45 ns).

Use Value: Soft-recovery diode eliminates voltage spikes during body-diode commutation, reducing EMI filter burden.

Use Scenario: 24 V/3 A auxiliary supply in industrial PLC backplane, operating continuously at 40°C ambient.

IC Role / Device Role / Timing Role: Hard-switched flyback primary switch with fixed 65 kHz frequency and 3 A peak current.

Use Value: Rthj-case = 5 °C/W allows direct-mount heatsinking to chassis, eliminating need for isolated thermal pad.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGP3NB60FDSame die, TO-220 (non-insulated tab); Rthj-case = 1.8 °C/W vs. 5 °C/WRequires electrically isolating washer/mica pad when mounted to grounded heatsinkSelect when lower thermal resistance is prioritized and isolation can be implemented mechanically
FGB3040L600 V, 3 A, DPAK; higher VCE(sat) (2.2 V typ.), no integrated diodeNeeds external ultrafast diode; limited to lower power density due to Rthj-case = 2.1 °C/WSelect when board space constraints favor surface-mount and diode can be added separately

Compared with STGP3NB60FD, STGF3NB60FD trades 3.2 °C/W higher thermal resistance for electrical isolation and simplified mechanical assembly; versus FGB3040L, it delivers lower system-level BOM count and superior diode integration for resonant topologies.

Availability

STGF3NB60FD is available at Aetrix Electronics and suitable for motor control inverters, active PFC stages, and resonant LLC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for STGF3NB60FD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MCU, and sensor technologies for industrial, automotive, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT family, engineered specifically for high-efficiency, high-frequency switching in industrial power conversion systems up to 40 kHz.

FAQ

What is the maximum gate-emitter voltage rating for STGF3NB60FD?

The absolute maximum VGE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks gate oxide degradation over time, while negative bias below –10 V may cause unintended turn-on due to Miller capacitance coupling during high dV/dt events.

Does STGF3NB60FD require a negative gate drive for reliable turn-off?

No - the device is fully enhanced at +15 V and reliably turned off with 0 V gate bias. However, applying –5 V to –10 V improves noise immunity in high-dV/dt environments and reduces Miller-induced false triggering in bridge configurations.

Can STGF3NB60FD replace STGP3NB60FD in an existing TO-220 footprint?

No - STGF3NB60FD uses TO-220FP (insulated tab) with different mounting hole spacing and thermal pad geometry. Mechanical redesign is required to accommodate its isolated tab and ensure proper heatsink contact without electrical shorts.

Is the integrated diode in STGF3NB60FD rated for continuous forward conduction?

Yes - the diode is rated for 3 A continuous forward current (IF) at TC = 25°C and 1.5 A at TC = 100°C, matching the IGBT's current capability. Its trr and Qrr are characterized across temperature and used in official SOA curves.

STGF3NB60FD Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
PowerMESH™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
6 A
Current - Collector Pulsed (Icm):
24 A
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 3A
Power - Max:
25 W
Switching Energy:
125µJ (off)
Input Type:
Standard
Gate Charge:
16 nC
Td (on/off) @ 25°C:
12.5ns/105ns
Test Condition:
480V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr):
45 ns
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STGF3NB60FD FAQ

1.How can I place an order for STGF3NB60FD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGF3NB60FD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGF3NB60FD reliable?

The price and inventory of STGF3NB60FD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGF3NB60FD is usually 5 days.

3.What payment methods are accepted for STGF3NB60FD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGF3NB60FD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGF3NB60FD?

STGF3NB60FD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGF3NB60FD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGF3NB60FD?

For technical support, including STGF3NB60FD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGF3NB60FD requirements.

6.How does Aetrix verify that STGF3NB60FD is sourced from the original manufacturer or authorized distributors?

All STGF3NB60FD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGF3NB60FD meets industry standards.

7.What is the process for return or replacement of STGF3NB60FD?

All STGF3NB60FD units undergo pre-shipment inspection (PSI). If there is an issue with STGF3NB60FD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGF3NB60FD part is unused and in its original packaging.

Return procedure for STGF3NB60FD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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