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STMicroelectronics STGF5H60DF

Part No.:
STGF5H60DF
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTGF5H60DF.pdf
Description:
TRENCH GATE FIELD-STOP IGBT, H S
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,812

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Product details

Overview

STGF5H60DF from STMicroelectronics is a 600 V, 5 A trench gate field-stop IGBT with integrated ultrafast soft-recovery antiparallel diode in TO-220FP package. It delivers 1.95 V typical VCE(sat) at 25 °C, 140 ns typical td(off), and 5 μs short-circuit withstand time-optimized for high-frequency motor control and PFC stages in industrial UPS systems.

For engineers reviewing the STGF5H60DF datasheet, STGF5H60DF pinout, STGF5H60DF application, or STGF5H60DF equivalent, this device supports safe paralleling due to its slightly positive VCE(sat) temperature coefficient and tight parameter distribution, while its low RthJC (6.2 °C/W) enables thermally constrained designs in compact TO-220FP form factor.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction and switching losses-achieving 56 μJ typical Eon and 78.5 μJ typical Eoff at 400 V, 5 A, 47 Ω gate resistance. Its integrated diode exhibits 134.5 ns typical trr and 48 nC Qrr at 25 °C, enabling efficient commutation in hard-switched topologies.

The device operates across –55 °C to +175 °C junction temperature, with VGE(th) tightly distributed between 4.8 V and 6.9 V and ICES limited to 25 μA at 600 V-ensuring robust gate control and leakage stability in high-voltage converter applications.

Key Specifications

Parameter Value and Actual Design Meaning
VCES 600 V - Withstands full DC bus voltage in 400 V-class PFC and motor drives without derating.
IC (TC = 100 °C) 5 A - Sustains continuous output current at elevated case temperatures common in enclosed UPS enclosures.
VCE(sat) (TJ = 125 °C) 1.6 V - Low conduction loss preserves efficiency during high-load operation in thermal-limited designs.
tsc 5 μs - Enables reliable short-circuit protection with standard gate driver response times in motor inverters.
RthJC (IGBT) 6.2 °C/W - Directly determines maximum power dissipation (24 W at TC = 25 °C) in TO-220FP mounting.
tr / tf 10.8 ns / 95 ns - Fast switching minimizes overlap loss in 20–100 kHz PWM converters.
Qg 38 nC - Defines gate drive power requirement and influences RG selection for EMI/loss trade-off.

Pinout & Package

STGF5H60DF is housed in TO-220FP (Full-Pak) package: insulated plastic body with metal tab acting as collector terminal, enabling direct heatsink mounting without insulator. Pin 1 = Gate, Pin 2 = Emitter, Pin 3 = Collector (Tab).

Pin/Terminal Circuit Role Design Meaning
Pin 1 (G) Gate Control input requiring ±20 V absolute max; 38 nC total charge defines driver sizing and layout criticality.
Pin 2 (E) Emitter Reference node for gate drive and current sensing; shared emitter path impacts shoot-through immunity.
Pin 3 (C) / Tab Collector Main power output terminal; electrically isolated tab allows direct thermal coupling to heatsink at 2500 VRMS isolation rating.

Key Features

Feature Design Value
Ultrafast soft recovery antiparallel diode 134.5 ns trr, 48 nC Qrr - Reduces voltage overshoot and EMI during freewheeling in bridge legs.
Tight parameter distribution VGE(th) = 4.8–6.9 V, VCE(sat) = 1.5–1.95 V - Enables predictable thermal sharing in paralleled configurations.
Slightly positive VCE(sat) tempco +0.1 mV/°C trend above 100 °C - Provides inherent current balancing under thermal stress without external sensing.
Short-circuit rated 5 μs withstand at VCC ≤ 360 V - Supports robust protection schemes using desaturation detection in motor drives.

Applications

Industrial Motor Drives Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 1–3 kW servo or pump drives operating at 16–25 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main switching device in low-side leg; handles bidirectional current with integrated diode freewheeling.

Use Value: 1.95 V VCE(sat) and 10.8 ns tr reduce conduction + switching losses simultaneously, improving system efficiency by ≥1.2% vs. legacy 600 V IGBTs.

Use Scenario: Boost PFC front-end in line-interactive UPS delivering 2 kVA with THD < 5% at full load.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; conducts during diode freewheel phase.

Use Value: 5 μs short-circuit rating allows fast desat detection, preventing catastrophic failure during AC line surge events.

Industrial HVAC Inverters Welding Power Supplies

Use Scenario: Compressor inverter module in commercial rooftop HVAC units with ambient operating range –20 °C to +60 °C.

IC Role / Device Role / Timing Role: Output switch in 2-level inverter bridge; subjected to repeated thermal cycling and high dv/dt stress.

Use Value: RthJC = 6.2 °C/W and 175 °C max TJ enable stable 5 A continuous operation even with minimal heatsink surface area.

Use Scenario: Primary-side switching in IGBT-based inverter welders operating at 20 kHz with 50% duty cycle bursts.

IC Role / Device Role / Timing Role: Hard-switched main power switch; must sustain repetitive 20 A pulsed currents with fast turn-off.

Use Value: 140 ns td(off) and 95 ns tf minimize switching transition time, reducing energy loss per pulse and improving arc stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGP5H60DF Same die, TO-220 (non-isolated tab); RthJC = 1.7 °C/W, PTOT = 88 W at TC = 25 °C. Requires insulating washer and thermal pad; suited for higher-power designs with larger heatsinks. Select when thermal budget permits higher power density and mechanical mounting allows non-isolated tab.
STGD5H60DF DPAK package; RthJC = 1.8 °C/W, but lower creepage/clearance; no insulated tab. Limited to lower-current (<3 A continuous) or surface-mount applications with strict height constraints. Choose only for space-constrained PCB layouts where TO-220FP mechanical footprint is unacceptable.

Compared with STGP5H60DF, STGF5H60DF trades 3.7× higher thermal resistance for 2500 V isolation and simplified mounting; versus STGD5H60DF, it provides 2.5× higher continuous current rating and superior ruggedness in high-dv/dt environments.

Availability

STGF5H60DF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and HVAC inverter modules requiring stable component supply across multi-year production cycles.

Supply support for STGF5H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STGF5H60DF belongs to the H-series IGBT family-engineered specifically for high-efficiency, high-frequency switching in 400–600 V power conversion systems where conduction–switching loss trade-offs are critical.

FAQ

What is the maximum gate-emitter voltage rating for STGF5H60DF?

The absolute maximum VGE is ±20 V, with gate-emitter leakage current specified at ±250 nA under that stress. Exceeding ±20 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and fast fall time.

Can STGF5H60DF be paralleled safely with identical units?

Yes-its slightly positive VCE(sat) temperature coefficient and tight parameter distribution (VGE(th) ±0.55 V, VCE(sat) ±0.225 V) enable inherently balanced current sharing. ST recommends matched gate resistors and symmetrical PCB layout, but no active current balancing circuitry is required for up to two devices in parallel.

What is the reverse recovery behavior of the integrated diode under high di/dt conditions?

At 100 A/μs di/dt and TJ = 175 °C, the diode exhibits 157 ns trr, 2.4 A Irrm, and 165 nC Qrr. This soft recovery profile limits voltage overshoot to <150 V above VCC in 400 V bus applications, reducing snubber requirements and EMI filter burden.

How does thermal performance differ between STGF5H60DF and STGP5H60DF?

STGF5H60DF (TO-220FP) has RthJC = 6.2 °C/W and PTOT = 24 W at TC = 25 °C; STGP5H60DF (TO-220) achieves RthJC = 1.7 °C/W and PTOT = 88 W under identical conditions. The FP variant sacrifices thermal capability for electrical isolation and simplified mechanical assembly.

STGF5H60DF Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
10 A
Current - Collector Pulsed (Icm):
20 A
Vce(on) (Max) @ Vge, Ic:
1.95V @ 15V, 5A
Power - Max:
24 W
Switching Energy:
56µJ (on), 78.5µJ (off)
Input Type:
Standard
Gate Charge:
43 nC
Td (on/off) @ 25°C:
30ns/140ns
Test Condition:
400V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr):
134.5 ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STGF5H60DF FAQ

1.How can I place an order for STGF5H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGF5H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGF5H60DF reliable?

The price and inventory of STGF5H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGF5H60DF is usually 5 days.

3.What payment methods are accepted for STGF5H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGF5H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGF5H60DF?

STGF5H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGF5H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGF5H60DF?

For technical support, including STGF5H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGF5H60DF requirements.

6.How does Aetrix verify that STGF5H60DF is sourced from the original manufacturer or authorized distributors?

All STGF5H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGF5H60DF meets industry standards.

7.What is the process for return or replacement of STGF5H60DF?

All STGF5H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGF5H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGF5H60DF part is unused and in its original packaging.

Return procedure for STGF5H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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