STMicroelectronics STGF6NC60HD
- Part No.:
- STGF6NC60HD
- Manufacturer:
- STMicroelectronics
- Category:
- Single IGBTs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STGF6NC60HD.pdf
- Description:
- IGBT 600V 6A 20W TO220FP
- Quantity:
- Payment:

- Shipping:

Inventory:2,041
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Product details
Overview
STGF6NC60HD from STMicroelectronics is a 600 V, 7 A N-channel high-frequency IGBT in TO-220FP package, featuring low VCE(sat) (2.5 V @ 3 A), ultra-low CRES/CIES ratio, and a soft ultra-fast recovery antiparallel diode. It is engineered for hard-switched and resonant SMPS, PFC stages, and motor drive inverters operating above 20 kHz.
For engineers reviewing the STGF6NC60HD datasheet, STGF6NC60HD pinout, STGF6NC60HD application, or STGF6NC60HD equivalent, key selection criteria include turn-off energy (68 µJ @ 25 °C), diode reverse recovery charge (14 nC), thermal resistance (5 °C/W junction-to-case), and gate charge (13.6 nC) - all critical for high-efficiency, high-frequency switching design validation.
Technical Context
This PowerMESH IGBT uses a patented strip layout to minimize tail current and reduce tf (100 ns typical), enabling stable operation at frequencies up to 100 kHz. Its optimized "H"-series structure delivers reduced VCE(sat) drift over temperature (1.7 V @ 125 °C, 3 A) while maintaining robust short-circuit withstand capability (ICL = 19 A).
The integrated ultra-soft diode exhibits trr = 21 ns and Qrr = 14 nC at 25 °C, with minimal voltage overshoot during commutation. Dynamic characteristics are characterized under standardized inductive load conditions (VCC = 390 V, IC = 3 A, RG = 10 Ω), ensuring reproducible SOA and Eoff behavior across production lots.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands full DC bus voltage in 400 V AC-input PFC and 3-phase inverter applications |
| IC (TC = 100 °C) | 3 A - Continuous conduction rating at elevated heatsink temperature, defining thermal derating envelope |
| VCE(sat) | 2.5 V @ 3 A, 25 °C - Low conduction loss enables >97% efficiency in 1–3 kW SMPS designs |
| Eoff | 68 µJ @ 25 °C - Enables high-frequency operation with manageable switching loss and thermal stress |
| Qg | 13.6 nC - Determines gate driver power requirement and influences switching speed control fidelity |
| trr / Qrr | 21 ns / 14 nC - Minimizes diode-induced voltage spikes and cross-conduction risk in bridge topologies |
| RthJC | 5 °C/W - Defines maximum allowable power dissipation for given case temperature rise (e.g., 12.5 W @ ΔT = 62.5 °C) |
Pinout & Package
STGF6NC60HD is housed in a TO-220FP (Full-Pak) package with insulated tab, offering enhanced creepage/clearance versus standard TO-220 and simplified heatsinking without isolation hardware.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input requiring 13.6 nC total charge; sensitive to dV/dt-induced false turn-on without proper gate resistor (RG = 10 Ω typical) |
| 2 (C) | Collector | Main high-side switching node; electrically connected to insulated metal tab for direct heatsink mounting |
| 3 (E) | Emiter | Power return path and gate reference; must be low-inductance connection to minimize shoot-through risk |
Key Features
| Feature | Design Value |
|---|---|
| Low CRES/CIES ratio | Reduces Miller-induced dv/dt turn-on susceptibility, enabling reliable operation with fast gate drivers and high bus dV/dt |
| Very soft ultra-fast recovery diode | Eliminates voltage ringing and reduces EMI in bridge-leg commutation, verified by <2 ns di/dt zero-crossing slope |
| Optimized for high-frequency switching | Delivers 100 ns tf and 76 ns td(off), supporting resonant LLC and phase-shifted full-bridge topologies up to 100 kHz |
| Low VCE(sat) with stable tempco | 1.7 V @ 125 °C, 3 A ensures predictable conduction loss across industrial ambient range (−40 to +105 °C) |
Applications
| High-Frequency Inverters | Resonant SMPS |
|---|---|
|
Use Scenario: 20–50 kHz three-phase motor drives for HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: Main switching device in 6-pulse inverter leg; handles PWM-modulated 600 V DC bus with 3 A RMS output current. Use Value: Low Eoff (68 µJ) and soft diode enable efficient sinusoidal current synthesis with <5% THD at full load. |
Use Scenario: 300–500 W LLC resonant converter in telecom rectifiers and server PSUs. IC Role / Device Role / Timing Role: High-side switch in half-bridge topology; synchronized to zero-voltage switching (ZVS) transitions. Use Value: Ultra-low CRES/CIES ensures reliable ZVS initiation even under light-load conditions. |
| PFC Boost Stages | Industrial Motor Drives |
|
Use Scenario: Active boost PFC stage in 1 kW industrial power supplies with universal AC input. IC Role / Device Role / Timing Role: Switching element in continuous conduction mode (CCM) boost circuit; operates at 65 kHz fixed frequency. Use Value: 2.5 V VCE(sat) minimizes conduction loss contribution to overall PFC efficiency (>96.5% at full load). |
Use Scenario: 400 V AC-fed variable-frequency drives for conveyor systems and CNC spindles. IC Role / Device Role / Timing Role: Output stage IGBT in 3-level NPC inverter; handles 3 A peak phase current with 150 °C junction limit. Use Value: 5 °C/W RthJC allows direct mounting to aluminum heatsink, eliminating thermal interface material in compact enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-frequency IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGP6NC60HD | Same die, TO-220 (non-insulated tab); RthJC = 2 °C/W but requires electrical isolation hardware | Better thermal performance in isolated-mount designs; higher creepage risk in compact layouts | Select when heatsink isolation is already implemented and lower thermal resistance is prioritized over assembly simplicity |
| FGH60N60SMD | 600 V, 60 A device with higher IC rating; Eoff = 125 µJ @ 30 A - not directly scalable to STGF6NC60HD's 3 A test condition | Targeted at higher-power inverters (>5 kW); gate charge (120 nC) demands stronger driver stage | Not a drop-in replacement; only consider for redesigns where increased current headroom and different thermal architecture justify requalification |
Compared with STGP6NC60HD, STGF6NC60HD trades 3 °C/W higher junction-to-case thermal resistance for simplified mechanical integration; compared with FGH60N60SMD, it offers lower gate drive burden and proven stability in sub-5 kW resonant converters without overdesigning gate drive or heatsinking.
Availability
STGF6NC60HD is available at Aetrix Electronics and suitable for high-frequency inverters, resonant SMPS, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for STGF6NC60HD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.
STGF6NC60HD belongs to the PowerMESH H-series IGBT product line, developed specifically for high-frequency switching applications demanding low Eoff, soft diode recovery, and stable VCE(sat) across temperature.
FAQ
What is the maximum recommended gate-emitter voltage for STGF6NC60HD?
The absolute maximum VGE is ±20 V per datasheet Table 1. Operation above ±15 V increases gate oxide stress and accelerates wear-out; ST recommends −10 V turn-off bias and +15 V turn-on bias for optimal reliability and switching speed control in industrial applications.
Does STGF6NC60HD include an integrated anti-parallel diode?
Yes - it integrates a monolithic ultra-soft fast recovery diode with trr = 21 ns and Qrr = 14 nC at 25 °C. This diode is co-packaged and electrically matched to the IGBT die, enabling synchronous operation in half-bridge configurations without external diode placement.
Can STGF6NC60HD be used in zero-voltage switching (ZVS) topologies?
Yes - its low CRES/CIES ratio and soft diode recovery make it suitable for ZVS in LLC and phase-shifted full-bridge converters. Verified operation up to 100 kHz has been demonstrated with RG = 10 Ω and VCC = 390 V in ST's application note AN4745.
What is the short-circuit withstand time for STGF6NC60HD?
The device supports 10 µs short-circuit capability at VCE = 390 V, TJ = 150 °C, and RG = 10 Ω, as defined by the turn-off SOA curve (Figure 14). This enables robust protection response in motor drive fault conditions without desaturation circuit complexity.
STGF6NC60HD Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- PowerMESH™
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 6 A
- Current - Collector Pulsed (Icm):
- 21 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 3A
- Power - Max:
- 20 W
- Switching Energy:
- 20µJ (on), 68µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 13.6 nC
- Td (on/off) @ 25°C:
- 12ns/76ns
- Test Condition:
- 390V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr):
- 21 ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STGF6NC60HD FAQ
1.How can I place an order for STGF6NC60HD through Aetrix?
Please submit a Request for Quotation (RFQ) for STGF6NC60HD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STGF6NC60HD reliable?
The price and inventory of STGF6NC60HD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGF6NC60HD is usually 5 days.
3.What payment methods are accepted for STGF6NC60HD?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGF6NC60HD transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STGF6NC60HD?
STGF6NC60HD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STGF6NC60HD order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STGF6NC60HD?
For technical support, including STGF6NC60HD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGF6NC60HD requirements.
6.How does Aetrix verify that STGF6NC60HD is sourced from the original manufacturer or authorized distributors?
All STGF6NC60HD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGF6NC60HD meets industry standards.
7.What is the process for return or replacement of STGF6NC60HD?
All STGF6NC60HD units undergo pre-shipment inspection (PSI). If there is an issue with STGF6NC60HD, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STGF6NC60HD part is unused and in its original packaging.
Return procedure for STGF6NC60HD:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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