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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGF7H60DF

Name: STGF7H60DF
Brand: STMicroelectronics
SKU: STGF7H60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGF7H60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3 Full Pack

Datasheet:: STGF7H60DF.pdf

Description:: IGBT TRENCH FS 600V 14A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGF7H60DF from STMicroelectronics is a 600 V, 7 A trench-gate field-stop IGBT with integrated ultrafast soft-recovery antiparallel diode in TO-220FP package. It delivers 1.95 V typical V_CE(sat) at 7 A/25 °C, 136 ns typ. diode reverse recovery time, and 3–5 μs short-circuit withstand capability-optimized for high-frequency motor controls and resonant-mode SMPS/PFC stages.

For engineers reviewing the STGF7H60DF datasheet, STGF7H60DF pinout, STGF7H60DF application, or STGF7H60DF equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, low R_thJC (6.2 °C/W IGBT), tight parameter distribution, and validated performance up to 175 °C junction temperature in hard-switched and ZVS/ZCS topologies.

Technical Context

This IGBT employs ST's proprietary trench gate + field-stop structure to balance conduction and switching losses across 20–100 kHz operation. Its gate threshold voltage (4.8–6.9 V) and input capacitance (1050 pF) support robust drive compatibility with standard 15 V gate drivers while maintaining stable turn-on timing under thermal stress.

The integrated diode features soft reverse recovery (Q_rr = 104 nC, I_rrm = 2.25 A at 25 °C) and exhibits predictable degradation at 175 °C (t_rr = 154 ns, Q_rr = 388 nC), enabling accurate loss modeling in PFC boost stages and inverter freewheeling paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage; supports 400 V DC bus designs with 50 % safety margin.
I_C (T_C = 100 °C)	7 A - Continuous current rating at case temperature of 100 °C; defines thermal derating limit in enclosed heatsink environments.
V_CE(sat) (T_J = 125 °C)	1.6 V - Confirmed saturation voltage at elevated junction temperature; enables precise conduction loss calculation in motor control FETs.
t_sc	3–5 μs - Short-circuit withstand time at V_CC ≤ 360 V; determines minimum fault-clearing response time required in gate driver protection circuitry.
R_thJC (IGBT)	6.2 °C/W - Junction-to-case thermal resistance for TO-220FP package; sets maximum allowable power dissipation (24 W at T_C = 25 °C) before exceeding 175 °C junction limit.
Q_g	46 nC - Total gate charge; determines required peak gate driver current (e.g., >0.9 A for 50 ns rise time) and influences switching speed vs. EMI trade-off.
t_r / t_f	12.2 ns / 69 ns - Turn-on current rise and turn-off current fall times at 400 V, 7 A, 47 Ω gate resistor; defines minimum dead-time requirements in half-bridge configurations.

Pinout & Package

STGF7H60DF uses the TO-220FP (Full-Pak) package: insulated plastic body with internal isolation between collector tab and mounting surface, enabling direct heatsink mounting without insulating washer. Package height is 10.0–10.4 mm; lead pitch is 2.54 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ±20 V absolute max rating; 46 nC total charge demands low-impedance drive path to minimize switching losses.
2 (C)	Collector	Main power output terminal; electrically connected to metal tab; must be isolated from heatsink unless system ground reference permits direct mounting.
3 (E)	Emiter	Power return and gate-emitter reference node; forms low-inductance loop with gate driver ground to suppress oscillation during fast transitions.

Key Features

Feature	Design Value
Trench gate + field-stop structure	Enables simultaneous optimization of V_CE(sat) (1.95 V) and switching energy (199 μJ total), reducing total losses in 40–80 kHz PFC converters.
Positive V_CE(sat) temperature coefficient	Ensures current sharing stability when paralleling multiple devices-critical for high-power motor drives where thermal gradients exceed 40 °C.
Ultrafast soft-recovery antiparallel diode	136 ns t_rr with 2.25 A I_rrm minimizes voltage overshoot and EMI during commutation, eliminating need for external snubbers in interleaved PFC.
Tight parameter distribution	±5 % V_CE(sat) and ±8 % Q_g tolerance across production lots simplifies gate driver design and reduces worst-case timing margining.
Short-circuit rated (3–5 μs)	Allows implementation of simple desaturation detection circuits with fixed blanking time, reducing BOM count versus active current-limiting solutions.

Applications

Industrial Motor Drive Inverter

High-Efficiency PFC Boost Stage

Use Scenario: 3-phase inverter stage in HVAC compressors operating at 8–16 kHz switching frequency with forced-air cooling.

IC Role / Device Role / Timing Role: Main switching device in each leg; handles bidirectional current flow via integrated diode during PWM dead-time conduction.

Use Value: 1.6 V V_CE(sat) at 125 °C reduces conduction loss by 18 % vs. legacy 600 V IGBTs, directly improving system efficiency at full load.

Use Scenario: Continuous-conduction-mode (CCM) boost PFC in 1–3 kW server PSUs using interleaved topology.

IC Role / Device Role / Timing Role: High-side switch with synchronous freewheeling; diode conducts during switch-off phase with controlled soft recovery.

Use Value: 104 nC Q_rr limits reverse recovery loss to <120 μJ per cycle, enabling >96.5 % efficiency at 230 V AC input without auxiliary clamping.

Resonant LLC DC-DC Converter

UPS Inverter Output Stage

Use Scenario: Primary-side switch in 300–500 kHz LLC resonant converter for telecom rectifiers with zero-voltage switching.

IC Role / Device Role / Timing Role: Hard-commutated switch during startup and light-load transitions; relies on low C_ies (1050 pF) for minimal capacitive turn-on loss.

Use Value: 23 pF C_res minimizes Miller effect, allowing clean gate drive waveforms even with 47 Ω series resistance-reducing risk of spurious turn-on.

Use Scenario: Output H-bridge in online double-conversion UPS delivering pure sine wave to critical IT loads.

IC Role / Device Role / Timing Role: Low-loss switching element handling 60 Hz fundamental plus harmonic content up to 3 kHz; diode manages reactive current reversal.

Use Value: 154 ns t_rr at 175 °C ensures consistent diode recovery behavior across full temperature range, preventing shoot-through during polarity reversal.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP7H60DF	TO-220 package (non-isolated tab); R_thJC = 1.7 °C/W (IGBT), higher continuous current (14 A @ T_C = 25 °C).	Requires insulating washer for heatsink mounting; better suited for open-frame industrial drives with accessible mounting hardware.	Select when thermal performance outweighs isolation needs and board space allows larger TO-220 footprint.
STGB7H60DF	D²PAK (TO-263) package; R_thJC = 1.7 °C/W (IGBT); same electrical specs but surface-mount compatible.	Enables automated assembly and higher power density; limited to PCB copper area for heat spreading instead of external heatsink.	Select for compact, reflow-soldered SMPS designs where thermal interface resistance to heatsink is prohibitive.

Compared with STGP7H60DF, STGF7H60DF trades lower thermal resistance for built-in isolation-reducing assembly steps but requiring higher gate drive current due to identical Q_g. Versus STGB7H60DF, it sacrifices PCB assembly scalability for simplified mechanical integration in through-hole power modules.

Availability

STGF7H60DF is available at Aetrix Electronics and suitable for high-frequency motor controls, resonant SMPS, and PFC applications requiring stable component supply across automotive-grade temperature ranges and long-lifecycle industrial programs.

Supply support for STGF7H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGF7H60DF belongs to the H-series IGBT family engineered specifically for high-efficiency, high-switching-frequency power conversion-targeting motor drives, renewable energy inverters, and server/telecom power supplies where conduction–switching loss trade-offs dominate system-level efficiency.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 175 °C junction temperature?

At T_J = 175 °C, measured t_f increases to 99 ns with R_G = 47 Ω. To maintain t_f ≤ 120 ns while ensuring adequate noise immunity, R_G should not exceed 68 Ω. Higher values risk excessive tail current and elevated E_off, particularly in parallel configurations where mismatched turn-off timing may cause current imbalance.

Does the integrated diode support bidirectional current in synchronous rectification mode?

No-the antiparallel diode is optimized for freewheeling and reverse recovery, not synchronous rectification. Its forward voltage (1.5 V typ. at 7 A) and soft recovery profile lack the low V_F and fast t_rr needed for high-efficiency SR operation. External MOSFETs remain necessary for true synchronous rectification in LLC or buck-derived topologies.

Can STGF7H60DF replace STGP7H60DF in an existing TO-220 footprint without redesign?

No-STGF7H60DF uses TO-220FP (Full-Pak) with internal insulation and different lead spacing (2.54 mm vs. 2.40–2.70 mm for TO-220 type A). Mechanical interference and solder joint reliability would be compromised. The TO-220FP variant requires dedicated pad layout and mounting torque specification (0.5–0.7 N·m) distinct from standard TO-220.

Is the 2.5 kV V_ISO rating applicable to all three leads simultaneously or per-lead-to-heatsink?

The 2.5 kV RMS insulation withstand voltage is rated from all three leads collectively to the external heatsink surface (not per pin), verified for 1 second at 25 °C. This confirms safe operation when the insulated tab is mounted directly to a grounded heatsink in Class I safety systems, eliminating need for additional creepage/clearance barriers in 230 V AC mains-connected equipment.

STGF7H60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 14 A

Current - Collector Pulsed (Icm):: 28 A

Vce(on) (Max) @ Vge, Ic:: 1.95V @ 15V, 7A

Power - Max:: 24 W

Switching Energy:: 99µJ (on), 100µJ (off)

Input Type:: Standard

Gate Charge:: 46 nC

Td (on/off) @ 25°C:: 30ns/160ns

Test Condition:: 400V, 7A, 47Ohm, 15V

Reverse Recovery Time (trr):: 136 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STGF7H60DF FAQ

1.How can I place an order for STGF7H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGF7H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGF7H60DF reliable?

The price and inventory of STGF7H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGF7H60DF is usually 5 days.

3.What payment methods are accepted for STGF7H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGF7H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGF7H60DF?

STGF7H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGF7H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGF7H60DF?

For technical support, including STGF7H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGF7H60DF requirements.

6.How does Aetrix verify that STGF7H60DF is sourced from the original manufacturer or authorized distributors?

All STGF7H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGF7H60DF meets industry standards.

7.What is the process for return or replacement of STGF7H60DF?

All STGF7H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGF7H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGF7H60DF part is unused and in its original packaging.

Return procedure for STGF7H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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