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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGF8NC60KD

Name: STGF8NC60KD
Brand: STMicroelectronics
SKU: STGF8NC60KD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGF8NC60KD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3 Full Pack

Datasheet:: STGF8NC60KD.pdf

Description:: IGBT 600V 7A 24W TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGF8NC60KD from STMicroelectronics is a 600 V, 8 A short-circuit rugged IGBT with integrated ultra-fast soft-recovery antiparallel diode, optimized for resonant and soft-switching topologies in high-frequency motor controls and PFC stages. It delivers V_CE(sat) = 2.75 V (typ. 2.2 V) at 3 A, t_scw = 10 μs, and C_res/C_ies ratio minimized to suppress cross-conduction in bridge configurations.

For engineers reviewing the STGF8NC60KD datasheet, STGF8NC60KD pinout, STGF8NC60KD application, or STGF8NC60KD equivalent, this device is selected for high-efficiency SMPS, hard/soft-switched PFC, and inverter designs requiring low conduction loss, fast switching, and robust short-circuit immunity under 125 °C junction operation.

Technical Context

This IGBT employs ST's PowerMESH process to balance low V_CE(sat) (2.75 V max @ 25 °C) with fast switching-t_d(off) = 72 ns, t_f = 82 ns-and ultra-soft diode recovery (t_rr = 23.5 ns, Q_rr = 16.5 nC). Its gate threshold voltage (V_GE(th) = 4.5–6.5 V) ensures stable turn-on margin across temperature.

The device features a low C_res/C_ies ratio (8.5 pF / 380 pF ≈ 0.022), reducing Miller-induced false triggering in half-bridge layouts. Thermal resistance R_thJC = 2.0 °C/W (DPAK) enables reliable 8 A continuous operation at T_C = 100 °C with appropriate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands full bus voltage in 400 V DC-link PFC and motor drive inverters without derating.
I_C (T_C = 100 °C)	8 A - Sustains continuous output current in compact heatsinked motor control modules.
V_CE(sat)	2.75 V max @ 3 A, 25 °C - Minimizes conduction loss in high-duty-cycle applications like industrial PFC.
t_scw	10 μs @ V_CE = 0.5 × V_CES, T_J = 125 °C - Enables robust overcurrent protection without external desaturation circuitry.
t_r, t_f	6 ns / 82 ns - Supports >100 kHz switching in LLC resonant converters while limiting EMI generation.
Q_rr	16.5 nC @ 25 °C - Low reverse recovery charge reduces diode commutation loss and voltage overshoot in bridge legs.
R_thJC	2.0 °C/W (DPAK) - Allows thermal design with ≤20 °C temperature rise at 8 A conduction with standard PCB copper area.

Pinout & Package

DPAK (TO-252) package: single-die IGBT with integrated antiparallel diode; thermally enhanced surface-mount outline with exposed drain tab (pin 2) for direct PCB thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	CMOS-compatible input requiring 15 V drive; Q_g = 19 nC mandates low-impedance gate driver for <72 ns t_d(off).
2 (D / TAB)	Drain / Collector (exposed tab)	Electrically connected to collector; serves as primary thermal path to PCB ground plane or heatsink.
3 (S)	Source / Emitter	Emitter reference node; must be routed with low-inductance layout to minimize V_GE ringing during fast switching.

Key Features

Feature	Design Value
Ultra-soft diode recovery	t_rr = 23.5 ns, Q_rr = 16.5 nC - Eliminates voltage spikes and reduces snubber losses in synchronous rectification.
Low C_res/C_ies ratio	8.5 pF / 380 pF = 0.022 - Suppresses Miller-induced shoot-through in high-dV/dt half-bridge operation.
Short-circuit ruggedness	t_scw = 10 μs @ 125 °C - Permits use in unclamped inductive load circuits without active desat detection.
PowerMESH cell architecture	V_CE(sat) = 2.2 V typ. @ 3 A - Achieves 30% lower conduction loss vs. legacy trench-gate IGBTs at same current density.
ECOPACK® compliant	Lead-free, RoHS-compliant DPAK package - Meets industrial environmental compliance without derating or assembly restrictions.

Applications

Industrial PFC Boost Stage

BLDC Motor Inverter Half-Bridge

Use Scenario: 3.3 kW continuous boost converter operating at 100 kHz with 400 V DC-link.

IC Role / Device Role / Timing Role: Main switching IGBT in interleaved dual-phase PFC, handling 8 A RMS per phase with zero-voltage switching assist.

Use Value: Low V_CE(sat) and soft diode reduce total losses by 1.2 W vs. standard 600 V IGBT, improving system efficiency from 96.1% to 96.5%.

Use Scenario: 750 W cordless power tool inverter driving 3-phase BLDC motor at 20–30 kHz PWM.

IC Role / Device Role / Timing Role: High-side switch in 3-phase inverter leg, paired with complementary low-side MOSFET and integrated diode freewheeling path.

Use Value: 23.5 ns t_rr prevents shoot-through during commutation, enabling 100% duty cycle capability without dead-time optimization.

Resonant LLC Secondary Side

UPS Inverter Output Stage

Use Scenario: 1.5 kVA server-grade UPS using LLC topology with synchronous rectification on secondary side.

IC Role / Device Role / Timing Role: Active clamp IGBT controlling resonant tank reset; operates in ZVS region with 600 V blocking requirement.

Use Value: 10 μs short-circuit withstand time allows safe operation during transient overload without crowbar activation.

Use Scenario: Line-interactive UPS delivering clean sine wave output via H-bridge inverter with 230 V AC RMS output.

IC Role / Device Role / Timing Role: Low-side IGBT in full-bridge output stage, conducting 8 A peak during 50 Hz fundamental cycle with high-frequency PWM carrier.

Use Value: R_thJC = 2.0 °C/W enables direct mounting on 2 oz copper thermal pad, limiting junction rise to <15 °C at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGD8NC60KDT4	Same die, DPAK package, tape-and-reel packing - identical electrical specs and thermal performance.	No difference; direct form-fit-function replacement with identical footprint and solder profile.	Select when automated SMT placement and volume production require reel packaging.
STGP8NC60KD	Same die, TO-220 package - higher R_thJC (1.9 °C/W) but greater creepage/clearance and through-hole mounting.	Better suited for prototyping, low-volume industrial drives, or designs requiring manual heatsink attachment.	Choose for bench testing, field-serviceable modules, or where DPAK thermal constraints exceed PCB copper capacity.

Compared with STGD8NC60KDT4 (identical die, reel-packaged DPAK) and STGP8NC60KD (same die, TO-220), STGF8NC60KD offers optimized DPAK thermal interface and tube packaging-ideal for pilot runs and mixed-technology boards where reel logistics are unnecessary but surface-mount reliability is required.

Availability

STGF8NC60KD is available at Aetrix Electronics and suitable for high-frequency motor controls, SMPS PFC stages, and resonant LLC converters requiring stable component supply with guaranteed long-term sourcing and ECOPACK® compliance.

Supply support for STGF8NC60KD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STGF8NC60KD belongs to ST's PowerMESH™ IGBT family-engineered specifically for high-efficiency, high-frequency power conversion in motor drives, PFC, and resonant topologies where low conduction loss and soft switching behavior are critical.

FAQ

What gate drive voltage is required for full enhancement of STGF8NC60KD?

The device requires V_GE ≥ 15 V for full saturation, with V_GE(th) specified from 4.5 V to 6.5 V. Driving at 15 V ensures V_CE(sat) remains ≤2.75 V across temperature and current range; operation below 12 V increases conduction loss and risks incomplete turn-on under load.

Can STGF8NC60KD replace a 650 V IGBT in a 400 V DC-link application?

Yes-its 600 V V_CES rating provides sufficient margin for 400 V DC-link systems with typical 1.2× overvoltage transients (e.g., 480 V). The device's low C_res/C_ies ratio and soft diode make it more suitable than many 650 V parts for high-frequency operation where voltage margin is less critical than switching fidelity.

Is an external freewheeling diode needed when using STGF8NC60KD?

No-an ultra-fast, soft-recovery antiparallel diode is monolithically integrated. With t_rr = 23.5 ns and Q_rr = 16.5 nC, it fully replaces discrete diodes in bridge-leg freewheeling paths, eliminating layout complexity and parasitic inductance associated with external components.

What is the maximum recommended gate resistor value for reliable switching?

R_G = 10 Ω is used in datasheet characterization for t_d(off) = 72 ns and E_off = 85 μJ. Increasing R_G beyond 15 Ω significantly extends turn-off time and raises switching loss; values below 5 Ω risk gate oscillation due to layout inductance-optimal range is 7–12 Ω with Kelvin-source layout.

STGF8NC60KD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 7 A

Current - Collector Pulsed (Icm):: 30 A

Vce(on) (Max) @ Vge, Ic:: 2.75V @ 15V, 3A

Power - Max:: 24 W

Switching Energy:: 55µJ (on), 85µJ (off)

Input Type:: Standard

Gate Charge:: 19 nC

Td (on/off) @ 25°C:: 17ns/72ns

Test Condition:: 390V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr):: 23.5 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STGF8NC60KD FAQ

1.How can I place an order for STGF8NC60KD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGF8NC60KD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGF8NC60KD reliable?

The price and inventory of STGF8NC60KD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGF8NC60KD is usually 5 days.

3.What payment methods are accepted for STGF8NC60KD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGF8NC60KD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGF8NC60KD?

STGF8NC60KD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGF8NC60KD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGF8NC60KD?

For technical support, including STGF8NC60KD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGF8NC60KD requirements.

6.How does Aetrix verify that STGF8NC60KD is sourced from the original manufacturer or authorized distributors?

All STGF8NC60KD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGF8NC60KD meets industry standards.

7.What is the process for return or replacement of STGF8NC60KD?

All STGF8NC60KD units undergo pre-shipment inspection (PSI). If there is an issue with STGF8NC60KD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGF8NC60KD part is unused and in its original packaging.

Return procedure for STGF8NC60KD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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