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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGFW30H65FB

Name: STGFW30H65FB
Brand: STMicroelectronics
SKU: STGFW30H65FB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGFW30H65FB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-3PFM, SC-93-3

Datasheet:: STGFW30H65FB.pdf

Description:: IGBT 650V 60A 58W TO3PF

Quantity:: RFQ Add To RFQ list

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Inventory:3,579

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Product details

Overview

STGFW30H65FB from STMicroelectronics is a 650 V, 30 A trench gate field-stop IGBT in TO-3PF package, optimized for high-frequency switching in photovoltaic inverters and PFC stages. It delivers V_CE(sat) = 1.55 V (typ.) at I_C = 30 A, T_J = 25 °C; features tight parameter distribution, safe paralleling capability, and R_thJC = 1.63 °C/W for thermal reliability.

For engineers reviewing the STGFW30H65FB datasheet, STGFW30H65FB pinout, STGFW30H65FB application, or STGFW30H65FB equivalent, key selection criteria include its 175 °C maximum junction temperature, minimized tail current, positive V_CE(sat) temperature coefficient, and suitability for welding and high-frequency DC-AC conversion where conduction–switching loss trade-off is critical.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to achieve balanced conduction and switching losses across 10–100 kHz operating ranges. Its dynamic characteristics-E_on = 175 µJ and E_off = 572 µJ at T_J = 175 °C-support efficient operation under high-temperature, high-current conditions typical in solar inverters.

The device exhibits a slightly positive V_CE(sat) temperature coefficient (1.55 V → 1.75 V from 25 °C to 175 °C), enabling stable current sharing during parallel operation. Its C_ies = 3659 pF and Q_g = 149 nC are calibrated for gate drive compatibility with standard ±15 V logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Withstands full DC bus voltage in 600 V-class solar and industrial converters without derating.
I_C (T_C = 100 °C)	30 A - Sustains continuous output current in thermally constrained TO-3PF mounting at 100 °C case temperature.
V_CE(sat)	1.55 V (typ., 30 A, 25 °C) - Low conduction loss reduces power dissipation and heatsink requirements in high-efficiency PFC designs.
R_thJC	1.63 °C/W - Enables direct thermal coupling to heatsinks with predictable junction-to-case temperature rise under 30 A load.
E_off	572 µJ (T_J = 175 °C) - Quantifies turn-off energy penalty at max operating temperature, critical for snubber and driver sizing.
Q_g	149 nC - Determines required gate driver peak current (e.g., >15 A for 10 ns rise time) and influences switching speed control.
T_J(max)	175 °C - Allows operation in harsh ambient environments (e.g., rooftop PV enclosures) without thermal shutdown.

Pinout & Package

STGFW30H65FB uses the TO-3PF package: insulated metal tab (collector), three leads (Gate, Collector, Emitter), with creepage/clearance compliant for 3.5 kV RMS isolation between leads and heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Lead 1)	Gate	Controls IGBT turn-on/turn-off; requires ±20 V absolute max rating and 149 nC total charge for full switching.
C (Lead 2 + Tab)	Collector	Main high-side power terminal; electrically connected to metal tab for low-inductance, high-current path to heatsink.
E (Lead 3)	Emitter	Reference node for gate drive and current sensing; isolated from heatsink per 3.5 kV insulation rating.

Key Features

Feature	Design Value
High-speed switching series	Turn-off delay t_d(off) = 158 ns and fall time t_f = 65 ns at T_J = 175 °C enable >50 kHz operation in resonant topologies.
Minimized tail current	Reduces E_off contribution from minority carrier recombination, improving efficiency over conventional NPT IGBTs.
Tight parameter distribution	Ensures consistent V_CE(sat) and switching timing across production lots, simplifying parallel design and system calibration.
Safe paralleling	Positive V_CE(sat) temperature coefficient (1.55 → 1.75 V) ensures automatic current balancing without external ballasting resistors.
Low thermal resistance	R_thJC = 1.63 °C/W allows 30 A continuous current with ≤50 °C junction-to-case rise, reducing heatsink mass and cost.

Applications

Photovoltaic Inverters

Power Factor Correction

Use Scenario: Three-phase string inverters converting DC from solar arrays to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in NPC or T-type inverter legs, operating at 16–32 kHz with sinusoidal PWM.

Use Value: 1.55 V V_CE(sat) and 572 µJ E_off at 175 °C reduce thermal stress and improve inverter efficiency above 98.5%.

Use Scenario: Active front-end rectifiers in industrial UPS and motor drives requiring near-unity power factor.

IC Role / Device Role / Timing Role: Switching element in boost PFC stage, handling 30 A continuous input current at 650 V blocking.

Use Value: Tight V_CE(sat) distribution ensures uniform current sharing across multi-phase PFC modules without individual trimming.

Welding Equipment

High-Frequency Converters

Use Scenario: IGBT-based inverter welders delivering pulsed DC output with fast current slew rates (>1500 A/µs).

IC Role / Device Role / Timing Role: Primary switching device in DC-link chopper stage, switching at 20–50 kHz with 120 A pulsed collector current.

Use Value: Minimized tail current enables sharp current transitions and precise arc control, reducing spatter and improving weld quality.

Use Scenario: Resonant LLC and phase-shifted full-bridge converters in telecom rectifiers and EV chargers.

IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable main switch, rated for 650 V bus and 30 A RMS output current.

Use Value: 3659 pF C_ies and 149 nC Q_g support robust gate drive design with minimal Miller-induced shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30H65FB	Same die, TO-247 package; R_thJC = 0.58 °C/W vs. 1.63 °C/W; higher I_C = 60 A @ T_C = 25 °C.	Better suited for forced-air-cooled designs needing lower thermal resistance; less isolation (no 3.5 kV rating).	Select when board space permits TO-247 and heatsink interface supports lower R_thJC.
IXYS IXGN30N60B3	600 V, 30 A; V_CE(sat) = 1.8 V (typ.); higher E_off = 720 µJ at 175 °C; non-field-stop planar structure.	Higher conduction loss and slower switching limit use in >25 kHz converters; no inherent paralleling advantage.	Consider only if legacy design compatibility or supply chain constraints require IXYS footprint.

Compared with STGW30H65FB, STGFW30H65FB trades higher thermal resistance for reinforced isolation and compact TO-3PF form factor; versus IXGN30N60B3, it delivers superior switching efficiency and intrinsic current-sharing stability in multi-device systems.

Availability

STGFW30H65FB is available at Aetrix Electronics and suitable for photovoltaic inverters, power factor correction circuits, and welding equipment requiring stable component supply, long-term lifecycle support, and certified isolation performance.

Supply support for STGFW30H65FB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGFW30H65FB belongs to the HB series of high-speed IGBTs engineered specifically for frequency converters demanding optimal conduction–switching loss balance-targeting solar, industrial motor control, and high-efficiency SMPS applications.

FAQ

What is the maximum allowable gate-emitter voltage for STGFW30H65FB?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller capacitance coupling during high di/dt events.

Can STGFW30H65FB be used in parallel configurations without external emitter resistors?

Yes-its slightly positive V_CE(sat) temperature coefficient (1.55 V at 25 °C → 1.75 V at 175 °C) ensures natural current sharing. Parallel operation is validated in ST's application notes, provided layout symmetry, matched gate drive, and thermal coupling are maintained.

What is the significance of the 3.5 kV RMS insulation rating in TO-3PF packaging?

This rating certifies isolation between all three leads and the external heatsink for 1 second at 25 °C, enabling direct mounting on grounded metal chassis without additional insulating pads-critical for safety compliance in Class I PV inverters and industrial PFC units.

How does STGFW30H65FB's tail current behavior compare to standard IGBTs in hard-switching applications?

Its advanced trench field-stop structure minimizes minority carrier lifetime, reducing tail current duration by ~40% versus conventional NPT IGBTs. This cuts E_off by up to 35% at 175 °C, lowering switching losses and enabling higher-frequency operation without excessive thermal penalty.

STGFW30H65FB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-3PFM, SC-93-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 30A

Power - Max:: 58 W

Switching Energy:: 151µJ (on), 293µJ (off)

Input Type:: Standard

Gate Charge:: 149 nC

Td (on/off) @ 25°C:: 37ns/146ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3PF-3

STGFW30H65FB FAQ

1.How can I place an order for STGFW30H65FB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGFW30H65FB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGFW30H65FB reliable?

The price and inventory of STGFW30H65FB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGFW30H65FB is usually 5 days.

3.What payment methods are accepted for STGFW30H65FB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGFW30H65FB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGFW30H65FB?

STGFW30H65FB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGFW30H65FB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGFW30H65FB?

For technical support, including STGFW30H65FB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGFW30H65FB requirements.

6.How does Aetrix verify that STGFW30H65FB is sourced from the original manufacturer or authorized distributors?

All STGFW30H65FB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGFW30H65FB meets industry standards.

7.What is the process for return or replacement of STGFW30H65FB?

All STGFW30H65FB units undergo pre-shipment inspection (PSI). If there is an issue with STGFW30H65FB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGFW30H65FB part is unused and in its original packaging.

Return procedure for STGFW30H65FB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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