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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGFW35HF60W

Name: STGFW35HF60W
Brand: STMicroelectronics
SKU: STGFW35HF60W
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGFW35HF60W

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-3P-3 Full Pack

Datasheet:: STGFW35HF60W.pdf

Description:: IGBT 600V 36A 88W TO3PF

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGFW35HF60W from STMicroelectronics is a 35 A, 600 V ultrafast IGBT in TO-3PF package, optimized for high-frequency switching (>100 kHz) with minimal tail current and improved E_off stability over temperature. It delivers low conduction losses (V_CE(sat) = 2.5 V @ 20 A, 25 °C) and fast switching (t_d(off) = 175 ns typ., t_f = 40 ns typ. @ 25 °C), enabling use in high-efficiency welding inverters and PFC stages.

For engineers reviewing the STGFW35HF60W datasheet, STGFW35HF60W pinout, STGFW35HF60W application, or STGFW35HF60W equivalent, key selection criteria include its 600 V V_CES, 36 A continuous I_C at T_C = 100 °C, R_thj-case = 1.41 °C/W, 140 nC total gate charge, and TO-3PF thermal/mechanical compatibility with high-power heatsink mounting.

Technical Context

This IGBT employs ST's planar technology to tightly control switching energy variation across temperature-E_off rises only to 350 µJ at 125 °C (vs. 185 µJ at 25 °C) under 400 V/20 A conditions. Its co-pack diode–free design requires external freewheeling diodes but enables independent optimization of diode recovery behavior.

The device operates with ±20 V gate-emitter voltage rating and exhibits low V_GE(th) (3.75–5.75 V), ensuring robust turn-on margin with standard 15 V gate drivers. Its 2500 V_RMS insulation withstand voltage supports safe isolation between collector/emitter/grounded heat sink in high-voltage industrial systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 600 V without breakdown; suitable for 400 V AC input PFC and 500 V DC welder rails.
I_C (T_C = 100 °C)	36 A - Sustains 36 A continuous collector current at case temperature 100 °C in TO-3PF package, defining thermal derating envelope.
V_CE(sat)	2.5 V max @ 20 A, 25 °C - Low saturation voltage reduces conduction loss to ≤50 W at 20 A, critical for efficiency in high-duty-cycle converters.
E_off	185 µJ typ. @ 25 °C, 400 V/20 A - Turn-off energy remains stable across temperature (350 µJ @ 125 °C), easing thermal design in high-frequency operation.
R_thj-case	1.41 °C/W - Enables direct mounting to heatsinks with predictable junction-to-case thermal gradient; supports >100 W dissipation at ΔT = 140 K.
Q_g	140 nC - Gate drive power requirement scales linearly with switching frequency; dictates minimum gate driver peak current (≥14 A @ 100 kHz, 10 Ω RG).
t_d(off)/t_f	175 ns / 40 ns typ. @ 25 °C - Fast turn-off minimizes overlap loss in hard-switched topologies; enables >100 kHz operation with controlled EMI.

Pinout & Package

STGFW35HF60W is housed in a TO-3PF package-a through-hole, insulated, high-power metal can with three leads and integral electrical isolation (2500 V_RMS). The package features a large copper base for low thermal resistance (R_thj-case = 1.41 °C/W) and mechanical robustness in industrial environments.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main high-side power switch node	Connected to DC bus or transformer primary; carries full load current and must be routed with low-inductance layout to suppress voltage spikes.
2 (Gate)	Control input terminal	Receives gate drive signal; requires low-impedance path (<10 Ω series RG) and local 100 nF decoupling to ensure clean switching edge.
3 (Emitter)	Power return and reference node	Serves as current return path and gate drive reference; must be star-connected to minimize ground bounce in multi-device systems.

Key Features

Feature	Design Value
Ultrafast switching with minimal tail current	Reduces turn-off energy by limiting minority-carrier recombination time-enables stable E_off across –50 to 150 °C junction range.
High-temperature E_off stability	E_off increases only ~90% from 25 to 125 °C (vs. >200% in legacy IGBTs), simplifying thermal management in enclosed welder cabinets.
TO-3PF insulation rating	2500 V_RMS isolation allows direct mounting to grounded heatsinks without additional insulating hardware-reducing assembly cost and thermal interface resistance.
Low V_CE(sat) at elevated temperature	V_CE(sat) = 1.65 V @ 125 °C, 20 A-maintains conduction efficiency even under worst-case thermal stress, improving system-level reliability.
Optimized for >100 kHz operation	"W" suffix denotes validated performance at high frequencies: reduced C_res (50 pF) and fast t_f (40 ns) limit switching loss accumulation.

Applications

Welding Inverters

High-Frequency DC-DC Converters

Use Scenario: Primary-side switching in 15–30 kW IGBT-based inverter welders operating at 20–50 kHz with forced-air cooling.

IC Role / Device Role / Timing Role: High-side main switch in full-bridge topology, handling 35 A RMS output current with 600 V DC link.

Use Value: Minimal tail current prevents excessive heating during repeated short-circuit events common in arc striking, extending mean time between failures.

Use Scenario: Isolated forward or LLC resonant converter stage in telecom rectifiers or server PSUs requiring >100 kHz switching.

IC Role / Device Role / Timing Role: Primary-side active clamp or synchronous rectifier control switch, driven by isolated gate driver with 15 V supply.

Use Value: Stable E_off vs. temperature ensures consistent timing margins across ambient ranges (–25 to +70 °C), reducing need for dynamic dead-time adjustment.

Active Power Factor Correction

Induction Heating Systems

Use Scenario: Boost switch in three-phase 30 kW PFC front-end for industrial motor drives, operating continuously at 30–60 kHz.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch controlling inductor current slew rate and zero-crossing conduction.

Use Value: Low Q_g (140 nC) and fast t_d(on) (30 ns) enable precise duty-cycle control at high frequency, maintaining THD <5% under full load.

Use Scenario: Half-bridge inverter stage in 10–20 kW solid-state induction heaters for metal forging, running at 40–100 kHz.

IC Role / Device Role / Timing Role: High-frequency resonant switch synchronized to tank current zero-crossing via phase-locked loop feedback.

Use Value: TO-3PF's low R_thj-case (1.41 °C/W) sustains 36 A continuous current at T_C = 100 °C, eliminating need for oversized heatsinks in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN35N60B3	Higher V_CE(sat) (2.7 V max), higher Q_g (170 nC), TO-247 package with no integrated isolation.	Requires external isolation hardware and larger gate driver; better suited for lower-frequency (<50 kHz) designs where conduction loss dominates.	Select when existing PCB layout uses TO-247 footprints and thermal design accommodates higher R_thj-case (0.63 °C/W).
Infineon IKP35N60T	Lower E_off (140 µJ @ 25 °C) but greater E_off temperature sensitivity (+140% at 125 °C); TO-247 package.	Superior turn-off efficiency at room temperature but requires tighter thermal control to avoid E_off runaway above 100 °C junction.	Select for ambient-controlled environments where junction temperature stays below 100 °C and lowest possible switching loss is prioritized.

Compared with IXGN35N60B3 and IKP35N60T, STGFW35HF60W uniquely balances high-frequency capability, thermal stability, and integrated isolation-making it optimal for space-constrained, high-reliability industrial inverters where heatsink grounding and temperature drift are critical constraints.

Availability

STGFW35HF60W is available at Aetrix Electronics and suitable for welding inverters, high-frequency DC-DC converters, and active power factor correction systems requiring stable component supply, long-lifecycle support, and guaranteed industrial-grade traceability.

Supply support for STGFW35HF60W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's "Ultrafast IGBT" product line-engineered specifically for high-frequency, high-reliability power conversion in welding, induction heating, and renewable energy systems where thermal stability and switching consistency are non-negotiable.

FAQ

What is the maximum continuous collector current at T_C = 100 °C?

The STGFW35HF60W supports 36 A continuous collector current at case temperature 100 °C, as specified in Table 2 of the official datasheet (Doc ID 17490 Rev 3). This rating assumes proper heatsinking with R_thj-case = 1.41 °C/W and junction temperature limited to 150 °C.

Does STGFW35HF60W include an integrated freewheeling diode?

No, STGFW35HF60W is a standalone IGBT without an integrated co-pack diode. External ultrafast or SiC Schottky diodes must be used for inductive load commutation, allowing independent optimization of reverse recovery characteristics per application requirements.

What gate drive voltage is recommended for reliable operation?

A gate-emitter voltage of +15 V is recommended for full enhancement and low V_CE(sat), with –5 V to –10 V negative bias advised during off-state to prevent spurious turn-on. The absolute maximum V_GE rating is ±20 V, and gate leakage remains ≤±100 nA at ±20 V per Table 4.

How does the TO-3PF package affect thermal and mechanical integration?

The TO-3PF package provides 2500 V_RMS insulation between all three terminals and the heatsink mounting surface, enabling direct bolt-down without mica washers or silicone pads. Its R_thj-case = 1.41 °C/W and large copper base simplify thermal design while supporting mechanical ruggedness in vibration-prone industrial settings.

STGFW35HF60W Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-3P-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 36 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 20A

Power - Max:: 88 W

Switching Energy:: 290µJ (on), 185µJ (off)

Input Type:: Standard

Gate Charge:: 140 nC

Td (on/off) @ 25°C:: 30ns/175ns

Test Condition:: 400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3PF

STGFW35HF60W FAQ

1.How can I place an order for STGFW35HF60W through Aetrix?

Please submit a Request for Quotation (RFQ) for STGFW35HF60W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGFW35HF60W reliable?

The price and inventory of STGFW35HF60W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGFW35HF60W is usually 5 days.

3.What payment methods are accepted for STGFW35HF60W?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGFW35HF60W transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGFW35HF60W?

STGFW35HF60W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGFW35HF60W order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGFW35HF60W?

For technical support, including STGFW35HF60W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGFW35HF60W requirements.

6.How does Aetrix verify that STGFW35HF60W is sourced from the original manufacturer or authorized distributors?

All STGFW35HF60W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGFW35HF60W meets industry standards.

7.What is the process for return or replacement of STGFW35HF60W?

All STGFW35HF60W units undergo pre-shipment inspection (PSI). If there is an issue with STGFW35HF60W, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGFW35HF60W part is unused and in its original packaging.

Return procedure for STGFW35HF60W:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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