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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGH30H65DFB-2AG

Name: STGH30H65DFB-2AG
Brand: STMicroelectronics
SKU: STGH30H65DFB-2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGH30H65DFB-2AG

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGH30H65DFB-2AG.pdf

Description:: AUTOMOTIVE-GRADE TRENCH GATE FIE

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Product details

Overview

STGH30H65DFB-2AG from STMicroelectronics is an AEC-Q101 qualified automotive-grade trench gate field-stop IGBT with integrated antiparallel diode, rated at 650 V / 30 A (TC = 100 °C), V_CE(sat) = 1.55 V (typ.) @ IC = 30 A, TJ ≤ 175 °C, and optimized for high-frequency DC/DC converters in EV/HEV powertrains.

For engineers reviewing the STGH30H65DFB-2AG datasheet, STGH30H65DFB-2AG pinout, STGH30H65DFB-2AG application in traction inverters or on-board chargers, or STGH30H65DFB-2AG equivalent for parallel IGBT designs, this page delivers verified electrical specs, thermal performance data, package geometry, and real-world switching behavior under 175 °C junction conditions.

Technical Context

This IGBT employs ST's proprietary HB-series trench gate field-stop structure to balance conduction loss (low V_CE(sat)) and switching loss (fast tr/tf, low E_on/E_off). Its slightly positive V_CE(sat) temperature coefficient enables stable current sharing during paralleling.

The co-packaged soft-recovery diode exhibits trr = 28 ns (TJ = 25 °C) and Q_rr = 189 nC, with controlled Irrm = 11.8 A-critical for minimizing voltage overshoot and EMI in hard-switched inductive topologies like boost PFC and bidirectional DC/DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage under gate-open condition; supports 400–500 V DC bus systems with margin.
I_C (TC = 100 °C)	30 A - Continuous collector current rating at 100 °C case temperature; defines thermal design baseline for heatsink sizing.
V_CE(sat) (TJ = 25 °C)	1.55 V (typ.) - Low saturation voltage reduces conduction loss; enables >98% efficiency in 10–50 kHz DC/DC stages.
E_off (TJ = 175 °C)	500 µJ - Turn-off energy at max junction temperature; determines snubber sizing and gate driver peak current capability.
R_thJC (IGBT)	0.58 °C/W - Junction-to-case thermal resistance; enables direct mounting to heatsink with minimal thermal interface resistance.
trr (diode, TJ = 25 °C)	28 ns - Ultra-fast reverse recovery time minimizes commutation losses and dv/dt-induced shoot-through risk.
Q_g	155 nC - Total gate charge; sets minimum gate driver output current (≥3.1 A avg. for 100 ns rise time).

Pinout & Package

H²PAK-2 package: surface-mount, double-sided cooling capable, with isolated tab (collector) and two solder terminals (emitter, gate). Tab is electrically connected to collector; terminal 2 = emitter; terminal 3 = gate; terminal 1 = collector (tab).

Pin/Terminal	Circuit Role	Design Meaning
Tab (C)	Collector	Primary high-side power terminal; thermally and electrically connected to heatsink; requires isolation if heatsink is grounded.
Terminal 2 (E)	Emitter	Low-side return path; used for Kelvin emitter sensing in precision gate drive layouts.
Terminal 3 (G)	Gate	Control input; requires low-inductance routing and ≥15 V drive for full enhancement and low V_CE(sat).

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain use including temperature cycling, humidity, and mechanical shock per JESD47.
Tight V_CE(sat) distribution	±0.1 V typical spread across production lot-enables predictable paralleling without external current-sharing resistors.
Soft-recovery antiparallel diode	trr = 28 ns, Q_rr = 189 nC (TJ = 25 °C); limits voltage spike and EMI during freewheeling in hard-switched converters.
175 °C maximum junction temperature	Enables operation in under-hood environments without derating; extends system lifetime vs. 150 °C-rated alternatives.
Low R_thJC (0.58 °C/W)	Reduces thermal bottleneck between die and heatsink; allows higher power density in compact H²PAK-2 footprint.

Applications

On-Board Charger (OBC) Boost Stage

Traction Inverter Auxiliary DC/DC

Use Scenario: High-efficiency 3.3 kW bidirectional OBC boost converter operating at 50–100 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: Main switching device in interleaved boost topology; handles continuous 30 A peak current with <1.6 V conduction drop.

Use Value: Low E_ts (1450 µJ @ TJ = 175 °C) and tight parameter distribution reduce thermal imbalance and improve system reliability over lifetime.

Use Scenario: Isolated 12 V auxiliary supply in 800 V traction inverter, stepping down from main DC link to control logic rails.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge; operates at 100–200 kHz with 650 V blocking requirement.

Use Value: 650 V V_CES rating and soft diode enable zero-voltage switching (ZVS) assist while limiting voltage stress during dead-time transitions.

EV HVAC Compressor Inverter

HEV 48 V–400 V Bidirectional DC/DC

Use Scenario: 5–10 kW variable-speed HVAC compressor drive using 650 V Si IGBTs in 6-pack configuration.

IC Role / Device Role / Timing Role: Half-bridge leg switch; conducts 30 A RMS with 175 °C junction limit under sustained cabin heating load.

Use Value: Positive V_CE(sat) tempco and low R_thJC ensure uniform current sharing across paralleled devices without active balancing circuits.

Use Scenario: Regenerative braking energy transfer from 400 V battery to 48 V mild-hybrid subsystem at up to 5 kW.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) topology; blocks 650 V reverse voltage during phase reversal.

Use Value: Fast trr (139 ns @ TJ = 175 °C) and low Q_rr (1160 nC) minimize circulating current losses and improve DAB efficiency above 95%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IKW30N65ES5	V_CE(sat) = 1.6 V @ 30 A, R_thJC = 0.65 °C/W, trr = 45 ns (TJ = 150 °C)	Higher diode recovery loss; less suitable for high-frequency (>50 kHz) DC/DC where EMI is critical	Prefer when cost sensitivity outweighs switching loss and EMI targets
ON Semiconductor NGTB30N65FL2WG	V_CE(sat) = 1.75 V @ 30 A, E_off = 620 µJ @ TJ = 175 °C, no AEC-Q101 certification	Not qualified for automotive powertrain; limited to industrial or non-safety-critical HEV subsystems	Prefer for non-automotive industrial DC/DC where qualification overhead is unnecessary

Compared with IKW30N65ES5 and NGTB30N65FL2WG, STGH30H65DFB-2AG delivers lower conduction loss, faster diode recovery, and full AEC-Q101 compliance-making it the only choice for automotive-grade, high-frequency, paralleled IGBT designs requiring long-term reliability under 175 °C operation.

Availability

STGH30H65DFB-2AG is available at Aetrix Electronics and suitable for EV on-board chargers, traction inverter auxiliary supplies, HVAC compressor drives, and HEV bidirectional DC/DC converters requiring stable component supply across automotive production lifecycles.

Supply support for STGH30H65DFB-2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

This device belongs to ST's HB-series high-speed IGBT portfolio, engineered specifically for automotive traction and charging systems where efficiency, thermal robustness, and paralleling safety are non-negotiable.

FAQ

What is the maximum recommended gate resistor value for reliable turn-on at 175 °C?

The datasheet specifies td(on) = 23 ns and tr = 18 ns at TJ = 175 °C with RG = 10 Ω. Increasing RG beyond 15 Ω significantly degrades switching speed and increases E_on; ST recommends RG = 8–12 Ω for optimal trade-off between switching loss and gate oscillation damping in automotive environments.

Can STGH30H65DFB-2AG be used in single-ended forward or flyback topologies?

No-this device is not rated for unclamped inductive switching (UIS) and lacks avalanche ruggedness specification. It is designed exclusively for clamped topologies (e.g., half-bridge, full-bridge, phase-shifted converters) where voltage is limited by bus capacitance or active clamping.

Is the H²PAK-2 tab electrically isolated from the PCB substrate?

No-the tab is internally connected to the collector and must be electrically isolated from the PCB ground plane using insulating thermal pads or ceramic substrates. ST provides ECOPACK-compliant isolation recommendations in AN4729 and package drawing 8159712.

Does the integrated diode support synchronous rectification in ZVS resonant converters?

No-the antiparallel diode is optimized for soft recovery in hard-switched freewheeling, not zero-current turn-on. Its Q_rr and trr are too high for efficient synchronous rectification; external SiC Schottky diodes are required for that function.

STGH30H65DFB-2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 30A

Power - Max:: 260 W

Switching Energy:: 555µJ (on), 300µJ (off)

Input Type:: Standard

Gate Charge:: 155 nC

Td (on/off) @ 25°C:: 24ns/170ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: 28 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-2

STGH30H65DFB-2AG FAQ

1.How can I place an order for STGH30H65DFB-2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STGH30H65DFB-2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGH30H65DFB-2AG reliable?

The price and inventory of STGH30H65DFB-2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGH30H65DFB-2AG is usually 5 days.

3.What payment methods are accepted for STGH30H65DFB-2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGH30H65DFB-2AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGH30H65DFB-2AG?

STGH30H65DFB-2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGH30H65DFB-2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGH30H65DFB-2AG?

For technical support, including STGH30H65DFB-2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGH30H65DFB-2AG requirements.

6.How does Aetrix verify that STGH30H65DFB-2AG is sourced from the original manufacturer or authorized distributors?

All STGH30H65DFB-2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGH30H65DFB-2AG meets industry standards.

7.What is the process for return or replacement of STGH30H65DFB-2AG?

All STGH30H65DFB-2AG units undergo pre-shipment inspection (PSI). If there is an issue with STGH30H65DFB-2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGH30H65DFB-2AG part is unused and in its original packaging.

Return procedure for STGH30H65DFB-2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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