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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGHU30M65DF2AG

Name: STGHU30M65DF2AG
Brand: STMicroelectronics
SKU: STGHU30M65DF2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGHU30M65DF2AG

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: STGHU30M65DF2AG.pdf

Description:: AUTOMOTIVE-GRADE TRENCH GATE FIE

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Product details

Overview

STGHU30M65DF2AG from STMicroelectronics is an AEC-Q101 qualified 650 V, 30 A automotive-grade trench gate field-stop IGBT in HU3PAK package, featuring V_CE(sat) = 1.6 V (typ.) at I_C = 30 A, 6 µs short-circuit withstand time, and integrated soft fast-recovery antiparallel diode - deployed in e-compressor inverters requiring robust thermal performance and safe paralleling.

For engineers reviewing the STGHU30M65DF2AG datasheet, STGHU30M65DF2AG pinout, STGHU30M65DF2AG application, or STGHU30M65DF2AG equivalent, key selection criteria include junction temperature rating (T_J = 175 °C), Kelvin emitter pin for gate drive stability, R_thJC = 0.34 °C/W (IGBT), and tight V_CE(sat) distribution enabling reliable parallel operation in high-power traction inverters.

Technical Context

This IGBT employs ST's M-series trench gate field-stop architecture optimized for inverter systems where low conduction loss and short-circuit ruggedness are critical. Its positive V_CE(sat) temperature coefficient ensures current sharing stability under thermal stress.

The device integrates a co-packaged diode with t_rr = 223 ns (T_J = 25 °C) and Q_rr = 1.207 µC, enabling soft recovery and reduced EMI in hard-switched motor drives. The dedicated Kelvin emitter (Pin 2) separates power and sensing paths to minimize gate loop inductance and suppress Miller-induced false turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage compatible with 400 V DC-link industrial and 450 V automotive battery systems.
I_C (T_C = 100 °C)	57 A - Continuous current capability at case temperature of 100 °C, supporting sustained 30 A RMS operation in heatsink-limited designs.
V_CE(sat) @ 30 A, 25 °C	1.60 V (typ.) - Low saturation voltage reduces conduction loss to ~48 W at 30 A, improving inverter efficiency.
t_sc	6 µs - Minimum short-circuit withstand time at V_CC = 400 V and T_J ≤ 150 °C, enabling robust fault handling without external desat detection delay.
R_thJC (IGBT)	0.34 °C/W - Low junction-to-case thermal resistance allows >440 W total dissipation at T_C = 25 °C, easing thermal design in compact modules.
E_off @ 30 A, 175 °C	1530 µJ - Turn-off energy measured at maximum junction temperature, defining snubber and gate driver sizing for high-temperature operation.
Q_g	90 nC - Total gate charge determines required peak gate current (e.g., 9 A for 10 ns rise time), guiding driver IC selection.

Pinout & Package

HU3PAK is a thermally enhanced surface-mount power package with isolated tab (Pin 1), Kelvin emitter (Pin 2), main emitter (Pins 3–7), and gate (Pin 1). Tab is electrically connected to collector.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Collector)	High-current collector terminal	Electrically tied to internal IGBT/diode collector; serves as primary heat path to heatsink; must be insulated from PCB ground.
Pin 1 (G)	Gate	Main gate control input; driven by isolated gate driver; requires low-inductance layout to avoid oscillation.
Pin 2 (K)	Kelvin emitter	Sense-only emitter return for gate driver feedback; decouples power emitter path to eliminate V_GE error during high di/dt switching.
Pins 3–7 (E)	Main emitter	Parallel low-inductance emitter connection for high-current return; shares thermal path with tab but electrically isolated from Kelvin pin.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain applications including e-compressor and traction inverters per stress test requirements.
650 V / 30 A rating with 175 °C T_J	Enables use in 400–450 V battery systems with margin for voltage transients and extended lifetime at elevated ambient temperatures.
Soft, fast-recovery antiparallel diode	t_rr = 223 ns and Q_rr = 1.207 µC at 25 °C reduce reverse recovery loss and EMI in inductive motor loads.
Tight V_CE(sat) distribution	Ensures balanced current sharing across paralleled devices without active current balancing circuitry.
Kelvin emitter configuration	Eliminates gate drive voltage error caused by emitter trace inductance, preventing spurious turn-on during high-speed switching.

Applications

Automotive e-Compressor Inverters

Industrial BLDC Motor Drives

Use Scenario: High-efficiency 3-phase inverter for electric vehicle air conditioning compressors operating at 10–20 kHz PWM with 450 V DC-link.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 30 A RMS output with short-circuit protection during refrigerant stall events.

Use Value: 6 µs short-circuit withstand time enables safe shutdown without desaturation circuitry; 175 °C T_J supports compact heatsink design in space-constrained under-hood environments.

Use Scenario: 5–10 kW variable-frequency drive for HVAC blowers and industrial pumps using 400 V AC mains rectified to 540 V DC-link.

IC Role / Device Role / Timing Role: IGBT switch in 3-level NPC or 2-level inverter topology; operates at 8–16 kHz with forced-air cooling.

Use Value: R_thJC = 0.34 °C/W allows 57 A continuous current at T_C = 100 °C, reducing heatsink size and system cost versus TO-247 alternatives.

Onboard Charger (OBC) PFC Stages

Traction Inverter Auxiliary Stages

Use Scenario: Boost PFC stage in bi-directional OBC converting 230 V AC to 400 V DC, switching at 65–100 kHz with interleaved topology.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; conducts 30 A peak with low V_CE(sat) to minimize conduction loss.

Use Value: V_CE(sat) = 1.6 V (typ.) at 30 A cuts conduction loss by ~25% vs. standard 650 V IGBTs, improving full-load efficiency to >98.5%.

Use Scenario: Auxiliary DC-DC converter or pre-charge circuit in 800 V traction inverters, operating from 400 V intermediate bus.

IC Role / Device Role / Timing Role: Switching element in isolated flyback or forward converter; handles 30 A pulsed currents with low E_off at 175 °C.

Use Value: E_off = 1530 µJ at T_J = 175 °C enables stable operation without derating in high-ambient under-hood locations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N60B4	600 V rating, TO-247 package, no Kelvin emitter, R_thJC = 0.55 °C/W, t_sc not specified	Lacks AEC-Q101 qualification and short-circuit rating; unsuitable for automotive safety-critical inverters	Select only for non-automotive industrial PFC where Kelvin drive and 6 µs t_sc are not required.
Infineon IKW30N60H3	600 V rating, TO-247-3L, no Kelvin emitter, V_CE(sat) = 1.7 V (typ.), t_sc = 5 µs, R_thJC = 0.45 °C/W	Lower voltage rating limits use to 350 V DC-link systems; lacks automotive qualification and thermal margin	Acceptable for 380 V industrial motor drives where 650 V margin and AEC-Q101 are unnecessary.

Compared with IXGN30N60B4 and IKW30N60H3, STGHU30M65DF2AG delivers higher voltage margin (650 V), automotive qualification, Kelvin emitter for noise immunity, and superior thermal performance (R_thJC = 0.34 °C/W), making it uniquely suited for space- and reliability-constrained e-mobility inverters.

Availability

STGHU30M65DF2AG is available at Aetrix Electronics and suitable for automotive e-compressor inverters, industrial BLDC motor drives, and onboard charger PFC stages requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for STGHU30M65DF2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STGHU30M65DF2AG belongs to ST's M-series IGBT portfolio, engineered specifically for high-efficiency, high-reliability inverter systems where low-loss operation and short-circuit robustness are mandatory - targeting electric vehicle powertrain and industrial motor control.

FAQ

What is the purpose of the Kelvin emitter (Pin 2) on STGHU30M65DF2AG?

The Kelvin emitter (Pin 2) provides a dedicated low-current sense path for the gate driver's emitter reference, isolating it from high di/dt power emitter currents. This eliminates voltage drop errors across emitter stray inductance, preventing false turn-on during fast switching and improving gate control accuracy - critical for stable operation above 10 kHz.

Can STGHU30M65DF2AG be paralleled with identical units without external current balancing?

Yes - its tight V_CE(sat) distribution and positive temperature coefficient ensure inherent current sharing across paralleled devices. At 175 °C junction temperature, V_CE(sat) increases predictably, causing hotter devices to self-limit current. No external ballast resistors or active balancing circuits are needed for up to four devices in parallel under matched layout conditions.

What is the maximum recommended gate resistor value for reliable switching at 175 °C?

For reliable turn-on/turn-off with minimal overshoot and adequate short-circuit response, R_G should be ≤ 15 Ω when driving from a ±15 V isolated gate driver. At 175 °C, E_off rises to 1530 µJ; exceeding 15 Ω increases switching time and loss disproportionately. Layout inductance must remain <15 nH to maintain gate waveform integrity.

Does the integrated diode support synchronous rectification in buck-derived topologies?

No - the antiparallel diode is optimized for freewheeling in inverter legs, not synchronous rectification. Its Q_rr = 1.207 µC and t_rr = 223 ns at 25 °C result in significant reverse recovery loss if used as a high-frequency rectifier. For synchronous operation, discrete SiC Schottky diodes or MOSFETs are required to avoid cross-conduction and efficiency degradation.

STGHU30M65DF2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: M

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 84 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 30A

Power - Max:: 441 W

Switching Energy:: 210µJ (on), 1.147mJ (off)

Input Type:: Standard

Gate Charge:: 90 nC

Td (on/off) @ 25°C:: 22ns/151ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: 223 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: HU3PAK

STGHU30M65DF2AG FAQ

1.How can I place an order for STGHU30M65DF2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STGHU30M65DF2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGHU30M65DF2AG reliable?

The price and inventory of STGHU30M65DF2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGHU30M65DF2AG is usually 5 days.

3.What payment methods are accepted for STGHU30M65DF2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGHU30M65DF2AG transactions.

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4.How is shipping managed for STGHU30M65DF2AG?

STGHU30M65DF2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGHU30M65DF2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGHU30M65DF2AG?

For technical support, including STGHU30M65DF2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGHU30M65DF2AG requirements.

6.How does Aetrix verify that STGHU30M65DF2AG is sourced from the original manufacturer or authorized distributors?

All STGHU30M65DF2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGHU30M65DF2AG meets industry standards.

7.What is the process for return or replacement of STGHU30M65DF2AG?

All STGHU30M65DF2AG units undergo pre-shipment inspection (PSI). If there is an issue with STGHU30M65DF2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGHU30M65DF2AG part is unused and in its original packaging.

Return procedure for STGHU30M65DF2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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