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STMicroelectronics STGP100N30

Part No.:
STGP100N30
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixSTGP100N30.pdf
Description:
IGBT 330V 90A 250W TO220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:848

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Product details

Overview

STGP100N30 from STMicroelectronics is a 330 V, 90 A continuous collector current IGBT in TO-220 package, optimized for sustain and energy recovery circuits in plasma display panel (PDP) systems. It features 1.9 V typical VCE(sat) at 50 A/15 VGE, 330 A peak repetitive current, ±20 V gate-emitter voltage rating, and integrated low-drop companion diode for bidirectional energy handling.

For engineers reviewing the STGP100N30 datasheet, STGP100N30 pinout, STGP100N30 application in PDP sustain drivers, or STGP100N30 equivalent for high-current switching stages, this device delivers verified fast-switching performance with 490 µJ energy per pulse at 240 V, low thermal resistance (0.5 °C/W j-case), and ESD robustness (3 kV HBM).

Technical Context

The STGP100N30 employs STripFET™-based IGBT architecture with monolithic integration of a fast-recovery companion diode, enabling efficient bidirectional energy recovery in PDP sustain circuits. Its dynamic parameters include 25 ns typical turn-off voltage rise time and 134 ns turn-off delay time under standard test conditions (VGE = 15 V, IC = 25 A, VCC = 180 V, RG = 10 Ω).

Thermal design is supported by a maximum junction-to-case thermal resistance of 0.5 °C/W and an operating junction temperature range of –55 °C to 150 °C. Static characteristics include 330 V V(BR)CES, 3.0–5.5 V VGE(th), and 1 µA IGES at ±20 VGE, confirming stable gate control and blocking integrity across temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VCE(SAT)1.9 V typ @ 50 A, 15 VGE: enables low conduction loss in high-current sustain stage
IC (cont.)90 A @ TC = 25 °C: supports sustained high-power drive without derating at heatsink base
IRP330 A peak repetitive: handles pulsed energy recovery transients in PDP sustain waveforms
E/pulse490 µJ @ 240 V, 5.1 Ω gate resistor: quantifies switching loss for thermal budgeting
Rth(j-case)0.5 °C/W max: allows direct mounting to heatsink with predictable junction temperature rise
V(BR)CES330 V min: provides margin above 240 V sustain rail for reliable overvoltage tolerance
ESD HBM3 kV: ensures robustness during PCB handling and assembly without extra protection

Pinout & Package

STGP100N30 is housed in a TO-220 package with insulated tab, featuring three terminals: Collector (pin 1), Gate (pin 2), and Emitter (pin 3). The package complies with JEDEC TO-220 mechanical standards (A = 4.4–4.6 mm, D = 15.25–15.75 mm, L = 13–14 mm) and supports through-hole mounting with heatsink interface via the metal tab.

Pin/TerminalCircuit RoleDesign Meaning
1 (Collector)Main high-side current path inputConnected to PDP sustain bus (240–300 V); carries full panel sustain current
2 (Gate)Control terminal for IGBT turn-on/offDriven by isolated gate driver; requires ≤±20 V swing and low-inductance layout
3 (Emitter)Current return path and reference nodeServes as common emitter for IGBT and integrated diode; critical for current sensing and noise immunity

Key Features

FeatureDesign Value
Optimized PDP sustain recoveryEngineered specifically for high-efficiency energy recycling in plasma panel sustain circuits
Low VCE(sat) + fast switching1.9 V saturation voltage and 25 ns trise reduce both conduction and switching losses simultaneously
Integrated companion diodeMonolithically co-packaged fast-recovery diode enables compact, low-parasitic energy recovery path
High peak current capability330 A IRP supports short-duration, high-energy sustain pulses without latch-up
Robust thermal interface0.5 °C/W Rth(j-case) allows direct heatsink coupling without thermal interface material degradation risk

Applications

PDP Sustain DriverPDP Energy Recovery Circuit

Use Scenario: Driving the sustain electrodes of plasma display panels during active image display cycles.

IC Role / Device Role / Timing Role: High-current IGBT switch controlling 240–300 V sustain waveform at 200–500 kHz repetition rate.

Use Value: Low VCE(sat) and fast switching minimize power loss and thermal stress during continuous high-duty-cycle operation.

Use Scenario: Recovering and reusing discharge energy from sustain electrode pairs after each firing pulse.

IC Role / Device Role / Timing Role: Bidirectional switching element paired with integrated diode to route recovered energy back to storage capacitors.

Use Value: Integrated companion diode eliminates external diode placement and reduces layout parasitics critical for >90% energy recovery efficiency.

Industrial Plasma GeneratorHigh-Power Resonant Inverter Stage

Use Scenario: Generating stable plasma arcs in industrial surface treatment equipment using pulsed DC sustain.

IC Role / Device Role / Timing Role: Main switching device in half-bridge configuration delivering regulated 300 V, 50–100 A pulses.

Use Value: 330 A IRP and 150 °C Tj rating ensure reliability under repeated high-peak-current stress without thermal runaway.

Use Scenario: Operating in ZVS resonant inverters for induction heating or ultrasonic cleaning systems.

IC Role / Device Role / Timing Role: High-current switching element in resonant tank interface with precise timing control of current zero-crossings.

Use Value: Low Coes (35 pF) and controlled turn-off dynamics support clean ZVS transitions and reduced EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRGP4062DPBF600 V VCES, 100 A IC, higher VCE(sat) (2.2 V), TO-247 packageDesigned for general-purpose industrial motor drives, not PDP-optimizedSelect when higher voltage margin or TO-247 mechanical compatibility is required over PDP-specific efficiency
FGL60N100BNTDTU1000 V VCES, 60 A IC, lower peak current (240 A), different gate threshold (4.5–6.5 V)Targeted at UPS and welding inverters; lacks companion diode integrationChoose only if system requires >600 V blocking or discrete diode control is preferred

Compared with IRGP4062DPBF and FGL60N100BNTDTU, STGP100N30 offers superior conduction efficiency (1.9 V vs. ≥2.2 V) and PDP-specific dynamic tuning, but trades off voltage headroom and package form factor for application-optimized thermal and energy recovery performance.

Availability

STGP100N30 is available at Aetrix Electronics and suitable for plasma display panel sustain drivers, industrial plasma generators, and high-power resonant inverter stages requiring stable component supply and legacy-compatible TO-220 packaging.

Supply support for STGP100N30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The STGP100N30 belongs to ST's high-current IGBT portfolio developed specifically for plasma display and high-efficiency energy recovery applications, emphasizing low-loss switching and thermal robustness in compact packages.

FAQ

Is STGP100N30 still in active production?

No - STGP100N30 is marked as obsolete by STMicroelectronics per its official datasheet revision history (Rev 1, Feb 2009). However, Aetrix Electronics maintains legacy inventory and supports continued supply for existing designs with traceable, tested stock and extended lifecycle coordination.

What is the maximum gate resistor value recommended for reliable switching?

Based on measured switching waveforms and SOA data, ST specifies RG = 5.1 Ω for energy-per-pulse testing and RG = 10 Ω for standard dynamic characterization. Exceeding 15 Ω risks increased switching losses and thermal stress; values below 3.3 Ω require careful gate driver current capability verification.

Does STGP100N30 include an anti-parallel diode?

Yes - the device integrates a monolithic fast-recovery companion diode optimized for energy recovery in PDP sustain circuits. This diode shares the same die and package terminals, eliminating external diode placement and reducing layout parasitics critical for high-frequency operation.

Can STGP100N30 be used in motor drive inverters?

It can operate in low-frequency (<10 kHz), high-current motor drive stages due to its 90 A continuous rating and 330 V blocking, but it lacks built-in desaturation detection, soft-switching optimization, or 600+ V voltage margin typical of modern motor drive IGBTs - use requires thorough SOA validation under inductive load conditions.

STGP100N30 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
330 V
Current - Collector (Ic) (Max):
90 A
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 50A
Power - Max:
250 W
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
-/134ns
Test Condition:
180V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STGP100N30 FAQ

1.How can I place an order for STGP100N30 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP100N30 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP100N30 reliable?

The price and inventory of STGP100N30 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP100N30 is usually 5 days.

3.What payment methods are accepted for STGP100N30?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP100N30 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP100N30?

STGP100N30 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP100N30 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP100N30?

For technical support, including STGP100N30 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP100N30 requirements.

6.How does Aetrix verify that STGP100N30 is sourced from the original manufacturer or authorized distributors?

All STGP100N30 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP100N30 meets industry standards.

7.What is the process for return or replacement of STGP100N30?

All STGP100N30 units undergo pre-shipment inspection (PSI). If there is an issue with STGP100N30, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP100N30 part is unused and in its original packaging.

Return procedure for STGP100N30:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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