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STMicroelectronics STGP10H60DF

Part No.:
STGP10H60DF
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixSTGP10H60DF.pdf
Description:
IGBT TRENCH FS 600V 20A TO220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,771

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Product details

Overview

STGP10H60DF from STMicroelectronics is a 600 V, 10 A trench-gate field-stop IGBT with integrated ultrafast soft-recovery antiparallel diode in TO-220 package. It delivers 1.95 V typical VCE(sat) at 10 A/15 VGE, 107 ns typ. diode trr, and 5 μs short-circuit withstand time - optimized for high-frequency PFC and motor control inverters operating up to 100 kHz.

For engineers reviewing the STGP10H60DF datasheet, STGP10H60DF pinout, STGP10H60DF application, or STGP10H60DF equivalent, key selection criteria include its positive VCE(sat) temperature coefficient for safe paralleling, low RthJC (1.3 °C/W), and tight parameter distribution across production lots.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction and switching losses - achieving 83 μJ typ. Eon and 140 μJ typ. Eoff at 400 V, 10 A, 175 °C junction temperature. Its gate charge profile (Qg = 57 nC, Qgc = 27 nC) supports precise turn-on/turn-off timing control in hard-switched topologies.

The co-packaged diode features soft reverse recovery (Qrr = 120 nC, Irrm = 2.24 A) and low forward voltage (VF = 1.7 V at 10 A, 25 °C), minimizing commutation losses and EMI in bridge-leg configurations used in UPS and servo drives.

Key Specifications

Parameter Value and Actual Design Meaning
VCES 600 V - Withstands DC bus voltages up to 400 V nominal systems with 50% safety margin.
IC (TC = 100 °C) 10 A - Sustains continuous output current in thermally constrained motor drive heatsinks.
VCE(sat) (TJ = 175 °C) 1.70 V - Limits conduction loss to ≤17 W at 10 A, enabling compact thermal design.
tsc 3–5 μs - Enables robust overcurrent protection without desaturation circuit complexity.
RthJC (IGBT) 1.3 °C/W - Allows direct mounting to heatsink with minimal thermal interface resistance penalty.
trr (diode) 107 ns - Reduces voltage overshoot and snubber stress during freewheeling transitions.
Qg 57 nC - Matches standard 15 V gate drivers (e.g., IR2110, UCC27531) without external amplification.

Pinout & Package

STGP10H60DF uses TO-220 package (type A) with isolated tab. The metal tab is electrically connected to the collector (C), requiring insulated mounting hardware in grounded-emitter configurations.

Pin/Terminal Circuit Role Design Meaning
1 (Left) Gate (G) High-impedance MOS-controlled terminal; requires ≤±20 V drive and low-inductance layout to suppress oscillation.
2 (Center) Collector (C) High-side power node tied to heatsink tab; must be isolated from chassis ground unless system topology permits.
3 (Right) Emiter (E) Low-side reference for gate drive and current sensing; common return path for IGBT and diode.

Key Features

Feature Design Value
Trench gate field-stop structure Enables 600 V blocking with <1.95 V VCE(sat), reducing conduction loss by 22% vs planar IGBTs at same rating.
Positive VCE(sat) tempco Ensures current sharing within ±5% mismatch when two devices are paralleled without active balancing.
Ultrafast soft-recovery diode 107 ns trr and 2.24 A Irrm limit dv/dt-induced shoot-through risk in 3-phase inverter leg commutation.
Short-circuit rated Withstands 3–5 μs fault duration at VCC ≤ 360 V, simplifying protection logic in industrial motor drives.
Low RthJC (1.3 °C/W) Permits 115 W total dissipation at TC = 25 °C - supports >10 A RMS operation in forced-air-cooled enclosures.

Applications

Industrial Motor Drives Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 0.75–2.2 kW servo and pump drives operating at 8–20 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in each half-bridge leg, handling bidirectional energy flow with integrated diode freewheeling.

Use Value: Tight VCE(sat) distribution ensures balanced current sharing across parallel legs; soft diode reduces EMI filter size by 30%.

Use Scenario: DC-AC inverter in line-interactive UPS delivering clean 50/60 Hz sine wave under battery backup mode.

IC Role / Device Role / Timing Role: High-efficiency switching element in full-bridge topology, conducting up to 10 A RMS with low conduction loss.

Use Value: 1.3 °C/W RthJC enables stable operation at 100 °C case temperature without derating; short-circuit rating simplifies fault response.

Active PFC Front-Ends Induction Heating Systems

Use Scenario: Boost converter switch in 1–3 kW telecom/server rectifiers targeting >98% efficiency and EN61000-3-2 Class C compliance.

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch synchronized to AC line zero-crossings, managing reactive power correction.

Use Value: 57 nC Qg allows clean 100 kHz switching with standard gate drivers; low Eoff minimizes boost diode reverse recovery loss.

Use Scenario: Half-bridge resonant inverter in 1–5 kW domestic and light-industrial induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Primary power switch handling high di/dt (1170 A/μs) and repetitive hard-switching stress.

Use Value: 107 ns diode trr prevents destructive voltage spikes during ZVS transitions; 175 °C max TJ supports compact coil packaging.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 600 V IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGF10H60DF TO-220FP package; RthJC = 5 °C/W (vs 1.3 °C/W); same die, lower power dissipation (30 W). Suitable for space-constrained PCB-mount designs where heatsink contact area is limited. Select when board-level thermal management dominates over heatsink interface performance.
STGB10H60DF D²PAK (TO-263) package; RthJC = 1.3 °C/W; identical electrical specs but surface-mount compatible. Preferred for automated assembly and high-density power modules requiring reflow compatibility. Select when SMT production, reduced mechanical stress, or improved vibration tolerance are required.

Compared with STGF10H60DF and STGB10H60DF, STGP10H60DF offers optimal thermal interface performance in through-hole heatsink-mounted systems - delivering highest continuous current capability (10 A @ 100 °C) and lowest junction-to-case resistance among the H-series trio.

Availability

STGP10H60DF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and active power factor correction (PFC) circuits requiring stable component supply and long-term production continuity.

Supply support for STGP10H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STGP10H60DF belongs to ST's H-series IGBT portfolio - engineered specifically for high-efficiency, high-frequency switching converters where conduction and switching loss trade-offs must be tightly balanced.

FAQ

What gate drive voltage is recommended for STGP10H60DF?

ST specifies ±20 V absolute maximum gate-emitter voltage, with 15 V recommended for reliable turn-on and noise immunity. A 15 V drive achieves 1.95 V typical VCE(sat) at 10 A and ensures sufficient Miller plateau margin to prevent spurious turn-on during high dv/dt events.

Can STGP10H60DF be paralleled safely without external current-sharing resistors?

Yes - its slightly positive VCE(sat) temperature coefficient and tight parameter distribution (±5% VCE(sat)) enable stable current sharing between matched devices. ST recommends matching devices from same wafer lot and using symmetrical PCB layout with Kelvin emitter connections.

How does the integrated diode differ from standard FRD counterparts?

The ultrafast soft-recovery antiparallel diode has 107 ns trr and 120 nC Qrr at 10 A, with softness factor (ta/tb) > 1.2 - significantly reducing voltage overshoot and EMI compared to fast recovery diodes (typ. trr > 250 ns). This eliminates need for external snubbers in most 10–50 kHz applications.

What is the maximum allowable case temperature for continuous operation?

STGP10H60DF supports continuous operation up to 100 °C case temperature, delivering 10 A collector current per datasheet (Table 1). At this condition, junction temperature remains ≤175 °C with RthJC = 1.3 °C/W and 1.70 V VCE(sat), assuming no additional thermal interface resistance beyond specified test conditions.

STGP10H60DF Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
20 A
Current - Collector Pulsed (Icm):
40 A
Vce(on) (Max) @ Vge, Ic:
1.95V @ 15V, 10A
Power - Max:
115 W
Switching Energy:
83µJ (on), 140µJ (off)
Input Type:
Standard
Gate Charge:
57 nC
Td (on/off) @ 25°C:
19.5ns/103ns
Test Condition:
400V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr):
107 ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STGP10H60DF FAQ

1.How can I place an order for STGP10H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP10H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP10H60DF reliable?

The price and inventory of STGP10H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP10H60DF is usually 5 days.

3.What payment methods are accepted for STGP10H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP10H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP10H60DF?

STGP10H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP10H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP10H60DF?

For technical support, including STGP10H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP10H60DF requirements.

6.How does Aetrix verify that STGP10H60DF is sourced from the original manufacturer or authorized distributors?

All STGP10H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP10H60DF meets industry standards.

7.What is the process for return or replacement of STGP10H60DF?

All STGP10H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGP10H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP10H60DF part is unused and in its original packaging.

Return procedure for STGP10H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STGP10H60DF Tags

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