STMicroelectronics STGP12NB60HD
- Part No.:
- STGP12NB60HD
- Manufacturer:
- STMicroelectronics
- Category:
- Single IGBTs
- Package:
- TO-220-3
- Datasheet:
-
STGP12NB60HD.pdf
- Description:
- IGBT 600V 30A 125W TO220
- Quantity:
- Payment:

- Shipping:

Inventory:4,457
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Product details
Overview
STGP12NB60HD from STMicroelectronics is an N-channel 600 V, 18 A PowerMESH™ IGBT co-packaged with a TurboSwitch™ antiparallel diode in TO-220 package, optimized for high-frequency switching up to 50 kHz, featuring low VCE(sat) (≤2.8 V @ 12 A), low gate charge (68 nC), and fast turn-off (tf = 100 ns @ Tj = 25°C), used in hard-switched and resonant SMPS PFC stages.
For engineers reviewing the STGP12NB60HD datasheet, STGP12NB60HD pinout, STGP12NB60HD application, or STGP12NB60HD equivalent, key selection criteria include VCE(sat) at 125°C, Eoff at elevated temperature, diode reverse recovery performance (trr = 80 ns, Qrr = 240 nC), and thermal resistance (Rthj-case = 1.0 °C/W) for high-power density converter design.
Technical Context
This IGBT employs ST's patented strip layout for enhanced current handling and reduced tail current during turn-off, enabling efficient operation in resonant topologies where switching loss minimization is critical. Its gate threshold voltage (VGE(th) = 3–5 V) and transconductance (gfs = 10 S) support robust drive margin with standard ±15 V gate drivers.
The integrated TurboSwitch™ diode delivers low forward voltage (VF = 1.3 V @ 6 A, 25°C) and controlled reverse recovery (IRRM = 5.5 A, trr = 80 ns), reducing commutation stress and EMI in bidirectional current paths typical of PFC boost and inverter legs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 600 V - supports 400 V DC bus designs with ≥50% voltage margin for transient overvoltage in industrial SMPS. |
| IC (100°C) | 18 A - continuous conduction capability at case temperature up to 100°C, enabling compact heatsink sizing. |
| VCE(sat) | ≤2.8 V @ 12 A, 25°C - reduces conduction loss to <1.7 W at rated current, improving full-load efficiency. |
| Qg | 68 nC - enables fast, low-loss switching with moderate gate driver power (e.g., 1–2 W @ 50 kHz). |
| Eoff | 0.21 mJ @ 25°C / 0.45 mJ @ 125°C - quantifies turn-off energy for thermal modeling in high-frequency PFC stages. |
| tf | 100 ns @ 25°C / 200 ns @ 125°C - defines minimum dead-time requirement and impacts zero-voltage switching window. |
| Rthj-case | 1.0 °C/W - allows direct junction-to-heatsink thermal path estimation without PCB copper derating assumptions. |
Pinout & Package
TO-220 package with isolated tab (collector-connected), 3-pin configuration: Pin 1 = Gate, Pin 2 = Collector (tab), Pin 3 = Emitter. Mounting via screw through tab ensures low-thermal-resistance mechanical interface to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | High-impedance MOS-controlled terminal requiring ≤±20 V drive; low Qg enables use of discrete gate resistors (e.g., 10 Ω) for dV/dt control. |
| Pin 2 | Collector (Tab) | Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits direct mounting. |
| Pin 3 | Emitter | Reference node for gate drive and current sensing; low-inductance layout critical to minimize VGE ringing during switching. |
Key Features
| Feature | Design Value |
|---|---|
| PowerMESH™ strip layout | Enables uniform current distribution across die area, supporting 60 A pulsed current without localized thermal runaway. |
| Co-packaged TurboSwitch™ diode | Provides matched thermal and switching characteristics with IGBT, eliminating external diode selection and layout mismatch risks. |
| Low tail current contribution | Reduces Eoff dependency on temperature, maintaining predictable losses up to Tj = 150°C in UPS inverters. |
| High-frequency optimization (suffix "H") | Guarantees tf ≤ 200 ns and Eoff ≤ 0.45 mJ at 125°C, validated for 50 kHz hard-switched operation. |
Applications
| High-Frequency Motor Control | SMPS PFC Stage |
|---|---|
Use Scenario: Variable-speed drives for HVAC compressors operating at 20–50 kHz carrier frequency. IC Role / Device Role / Timing Role: Main switching device in three-phase inverter leg, delivering precise PWM-controlled torque with minimal switching loss. Use Value: Low VCE(sat) and fast tf reduce thermal load on heatsink, enabling fanless enclosure design in space-constrained units. | Use Scenario: Active boost PFC front-end in telecom rectifiers with 400 V DC output. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter, synchronized to line frequency. Use Value: Matched diode trr and low Qrr suppress voltage overshoot during diode commutation, easing snubber design. |
| UPS Inverter Output Stage | Resonant LLC Converter Primary Switch |
Use Scenario: 1–3 kVA online UPS delivering clean sine-wave output under battery backup. IC Role / Device Role / Timing Role: Half-bridge switch in full-bridge inverter, operating at 16–20 kHz with sinusoidal PWM modulation. Use Value: Stable VGE(th) and low Rthj-case ensure consistent conduction behavior across ambient temperature range (0–40°C). | Use Scenario: Primary-side switch in high-efficiency 300–500 W server PSU using LLC topology. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) enabled by low Coss (120 pF) and controlled tr(Voff) (27 ns). Use Value: Reduced capacitive turn-on loss and predictable Eon (290 µJ) enable accurate resonant tank design and efficiency mapping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-frequency IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRG4PH42UD | VCE(sat) = 2.7 V @ 12 A, higher Qg (90 nC), no co-packaged diode | Requires external ultrafast diode; less suitable for space-constrained PFC layouts | Prefer when gate drive strength exceeds 2 W and discrete diode selection is acceptable |
| IXGN120N60B3 | Higher IC (24 A @ 100°C), lower Eoff (0.15 mJ @ 25°C), TO-247 package | Larger footprint and higher cost; better for >2 kW systems with forced-air cooling | Prefer when thermal headroom is limited and board real estate allows TO-247 mounting |
Compared with IRG4PH42UD and IXGN120N60B3, STGP12NB60HD offers the only integrated diode solution in TO-220 with verified 50 kHz capability, making it optimal for cost-sensitive, medium-power PFC and motor control where layout simplicity and thermal predictability are prioritized.
Availability
STGP12NB60HD is available at Aetrix Electronics and suitable for high-frequency motor controls, SMPS PFC stages, and UPS inverter output stages requiring stable component supply and long-term industrial availability.
Supply support for STGP12NB60HD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.
The PowerMESH™ IGBT product line targets high-efficiency, high-frequency power conversion systems, specifically engineered to replace legacy planar IGBTs in SMPS, motor drives, and uninterruptible power supplies.
FAQ
Is STGP12NB60HD still in active production?
STGP12NB60HD is marked as Obsolete Product(s) in its official datasheet revision (October 2003), but remains available through authorized distributors and Aetrix Electronics' legacy component program with full traceability and extended warehouse stock. No functional replacement has been designated by STMicroelectronics.
What is the maximum recommended gate resistor value for 50 kHz operation?
Based on measured td(off) = 91 ns and Qg = 68 nC, a 10 Ω gate resistor is specified in the datasheet for 50 kHz operation. Increasing beyond 15 Ω risks exceeding safe dv/dt limits and increasing Eoff; values below 5 Ω require gate driver capable of ≥2 A peak current.
Can the integrated diode be used as the main freewheeling path in a synchronous buck converter?
No - the integrated TurboSwitch™ diode is rated for 12 A continuous (TC = 100°C) and 48 A pulsed, but its VF and trr are optimized for IGBT commutation, not unidirectional freewheeling. Dedicated Schottky or SiC diodes are preferred for buck output stage freewheeling.
Does STGP12NB60HD require negative gate voltage for reliable turn-off?
No - the datasheet specifies VGE = 0 V for turn-off, and gate leakage (±100 nA) is negligible at room temperature. However, applying –5 V improves noise immunity in high-dV/dt environments; the absolute maximum rating allows –20 V, but –5 V is sufficient for most industrial SMPS layouts.
STGP12NB60HD Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- PowerMESH™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 30 A
- Current - Collector Pulsed (Icm):
- 60 A
- Vce(on) (Max) @ Vge, Ic:
- 2.8V @ 15V, 12A
- Power - Max:
- 125 W
- Switching Energy:
- 210µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 68 nC
- Td (on/off) @ 25°C:
- 5ns/91ns
- Test Condition:
- 480V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr):
- 80 ns
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STGP12NB60HD FAQ
1.How can I place an order for STGP12NB60HD through Aetrix?
Please submit a Request for Quotation (RFQ) for STGP12NB60HD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STGP12NB60HD reliable?
The price and inventory of STGP12NB60HD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP12NB60HD is usually 5 days.
3.What payment methods are accepted for STGP12NB60HD?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP12NB60HD transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STGP12NB60HD?
STGP12NB60HD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STGP12NB60HD order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STGP12NB60HD?
For technical support, including STGP12NB60HD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP12NB60HD requirements.
6.How does Aetrix verify that STGP12NB60HD is sourced from the original manufacturer or authorized distributors?
All STGP12NB60HD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP12NB60HD meets industry standards.
7.What is the process for return or replacement of STGP12NB60HD?
All STGP12NB60HD units undergo pre-shipment inspection (PSI). If there is an issue with STGP12NB60HD, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STGP12NB60HD part is unused and in its original packaging.
Return procedure for STGP12NB60HD:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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