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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGP12NB60KD

Name: STGP12NB60KD
Brand: STMicroelectronics
SKU: STGP12NB60KD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGP12NB60KD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: STGP12NB60KD.pdf

Description:: IGBT 600V 30A 125W TO220

Quantity:: RFQ Add To RFQ list

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Inventory:4,961

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Product details

Overview

STGP12NB60KD from STMicroelectronics is an N-channel 600 V, 18 A short-circuit-proof PowerMESH™ IGBT in TO-220 package with co-packaged antiparallel diode, optimized for high-frequency motor controls and SMPS up to 50 kHz. It delivers 2.2 V typical V_CE(sat) at 12 A, 10 µs short-circuit withstand time, and 54 nC total gate charge.

For engineers reviewing the STGP12NB60KD datasheet, STGP12NB60KD pinout, STGP12NB60KD application, or STGP12NB60KD equivalent, key selection criteria include V_CE(sat), switching losses (E_on/E_off), thermal resistance (R_thj-case = 1.0 °C/W), and integrated diode recovery characteristics (t_rr = 80 ns).

Technical Context

This IGBT employs ST's patented strip layout for high current density and low conduction loss. Its gate threshold voltage (V_GE(th)) ranges 5–7 V, and it features low tail current contribution to off-losses per JEDEC standard.

Designed for hard-switched topologies, it supports 480 V DC bus operation with 590 A/µs (di/dt)_on and 650 µJ E_off at T_j = 125°C, enabling stable 10 µs short-circuit immunity under V_GE = 15 V and R_G = 10 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - maximum blocking voltage for 400–480 V DC bus applications
I_C @ T_C = 100°C	18 A - continuous collector current rating at heatsink temperature
V_CE(sat) @ 12 A	2.2 V typ - low conduction loss enabling <1.5 W conduction loss at 12 A
Q_g	54 nC - moderate gate drive energy requirement for 50 kHz switching
R_thj-case	1.0 °C/W - enables 125 W dissipation with ≤125°C junction rise above case
t_wsc	10 µs - guaranteed short-circuit withstand time under defined bias conditions
t_rr (diode)	80 ns @ T_j = 125°C - fast recovery supporting ZVS/ZCS soft-switching

Pinout & Package

TO-220 package with isolated tab (pin 2 connected to collector). Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Collector (tab), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance MOS-controlled input requiring 15 V drive for full enhancement
Pin 2	Collector (Tab)	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground referenced
Pin 3	Emitter	Common return path for load current and gate drive reference; low-inductance layout critical for switching stability

Key Features

Feature	Design Value
Short-circuit proof architecture	Guaranteed 10 µs withstand at V_CE = 300 V, T_j = 125°C, R_G = 10 Ω
Co-packaged fast recovery diode	80 ns t_rr, 5.5 A I_RRM, integrated for bidirectional current handling in bridge legs
Low gate charge (Q_g)	54 nC enables efficient 50 kHz operation with standard gate drivers (e.g., IR2110)
PowerMESH™ strip layout	Reduces V_CE(sat) drift over temperature and improves current sharing uniformity
High dV/dt immunity	Rated for >1000 V/µs - suppresses false turn-on in high-noise inverter environments

Applications

Motor Drive Inverter

Switch-Mode Power Supply

Use Scenario: 3-phase BLDC inverter stage in HVAC compressors operating at 20–30 kHz.

IC Role / Device Role / Timing Role: Main switching device in upper/lower leg of IGBT half-bridge, handling 12 A RMS load current.

Use Value: 10 µs short-circuit tolerance prevents catastrophic failure during rotor lock or phase short events.

Use Scenario: Primary-side switch in 1–3 kW telecom rectifier with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: Hard-switched main switch in boost PFC stage, switching at 30–50 kHz.

Use Value: Low Q_g and 2.2 V V_CE(sat) reduce driver power loss and conduction loss simultaneously.

Uninterruptible Power Supply

Induction Heating Inverter

Use Scenario: Output inverter stage in online double-conversion UPS delivering 230 VAC, 50 Hz sine wave.

IC Role / Device Role / Timing Role: Full-bridge IGBT switch controlling output waveform via SPWM modulation.

Use Value: Integrated antiparallel diode eliminates need for external FRED, reducing BOM count and layout area.

Use Scenario: Half-bridge resonant inverter driving 20–100 kHz induction coil in domestic cooktops.

IC Role / Device Role / Timing Role: High-di/dt switch (590 A/µs) sustaining repetitive zero-voltage switching transitions.

Use Value: Fast t_rr (80 ns) and low tail current minimize diode reverse recovery loss and EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH60UD	600 V, 20 A, V_CE(sat) = 2.7 V @ 12 A, Q_g = 65 nC, no integrated diode	Requires external fast diode; higher conduction loss but wider SOA at high T_j	Prefer when diode stress is managed externally and higher ruggedness at 150°C is required
FGB30N60WDTU	600 V, 30 A, V_CE(sat) = 2.4 V @ 15 A, Q_g = 72 nC, integrated diode with t_rr = 120 ns	Higher current rating but slower diode recovery; larger footprint (TO-247)	Prefer for higher-power inverters (>2.5 kW) where layout space allows TO-247 and diode speed is less critical

Compared with IRG4PH60UD and FGB30N60WDTU, STGP12NB60KD offers the lowest gate charge and fastest integrated diode among the three, making it optimal for compact, high-frequency SMPS and motor drives where layout area and EMI control are prioritized over absolute current headroom.

Availability

STGP12NB60KD is available at Aetrix Electronics and suitable for high-frequency motor controls, uninterruptible power supplies, and switch-mode power supplies requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for STGP12NB60KD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT product line, engineered specifically for high-efficiency, high-frequency switching applications demanding robust short-circuit protection and integrated freewheeling capability.

FAQ

What is the maximum recommended gate resistor value for reliable short-circuit protection?

A 10 Ω gate resistor is specified in the datasheet for the 10 µs short-circuit withstand test condition. Using R_G > 15 Ω increases turn-off time and may exceed safe SOA limits during fault events; R_G < 5 Ω risks excessive peak gate current and oscillation. ST recommends 8–12 Ω for balanced switching speed and fault robustness.

Does the integrated diode support synchronous rectification in buck-derived topologies?

No - the co-packaged diode is a fast recovery (not ultrafast or SiC) type with 80 ns t_rr and significant reverse recovery charge (Q_rr = 240 nC). It is intended for freewheeling in bridge configurations, not synchronous rectification, which requires near-zero Q_rr and controlled reverse recovery behavior.

Can STGP12NB60KD replace STGP10NC60HD in existing designs?

Not directly - STGP10NC60HD is a 600 V, 10 A device with different V_CE(sat) (2.5 V), gate charge (38 nC), and no short-circuit rating. While STGP12NB60KD offers higher current and short-circuit immunity, its higher Q_g and different SOA require gate driver and thermal redesign. Electrical validation is mandatory before substitution.

Is the TO-220 tab electrically isolated from all pins?

Yes - the metal tab is internally connected only to Pin 2 (Collector) and is fully insulated from Pins 1 and 3. When mounted on a heatsink, electrical isolation between tab and heatsink must be maintained unless the collector node is intentionally grounded in the system topology.

STGP12NB60KD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 12A

Power - Max:: 125 W

Switching Energy:: 258µJ (off)

Input Type:: Standard

Gate Charge:: 54 nC

Td (on/off) @ 25°C:: 25ns/96ns

Test Condition:: 480V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr):: 80 ns

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STGP12NB60KD FAQ

1.How can I place an order for STGP12NB60KD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP12NB60KD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP12NB60KD reliable?

The price and inventory of STGP12NB60KD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP12NB60KD is usually 5 days.

3.What payment methods are accepted for STGP12NB60KD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP12NB60KD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP12NB60KD?

STGP12NB60KD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP12NB60KD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP12NB60KD?

For technical support, including STGP12NB60KD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP12NB60KD requirements.

6.How does Aetrix verify that STGP12NB60KD is sourced from the original manufacturer or authorized distributors?

All STGP12NB60KD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP12NB60KD meets industry standards.

7.What is the process for return or replacement of STGP12NB60KD?

All STGP12NB60KD units undergo pre-shipment inspection (PSI). If there is an issue with STGP12NB60KD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP12NB60KD part is unused and in its original packaging.

Return procedure for STGP12NB60KD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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