Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STGP19NC60HD

Part No.:
STGP19NC60HD
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixSTGP19NC60HD.pdf
Description:
IGBT 600V 40A TO220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:14,705

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STGP19NC60HD from STMicroelectronics is a 19 A, 600 V very fast IGBT with integrated ultra-fast soft-recovery antiparallel diode in TO-220 package. It delivers VCE(sat) = 1.8 V (typ.) at 12 A/15 V, td(off) = 97 ns, and Qrr = 30 nC - optimized for high-frequency motor control and resonant SMPS/PFC topologies requiring low conduction loss and controlled switching tail.

For engineers reviewing the STGP19NC60HD datasheet, STGP19NC60HD pinout, STGP19NC60HD application, or STGP19NC60HD equivalent, this device is selected for its verified trade-off between low VCE(sat), fast turn-off energy (Eoff = 189 μJ), and soft diode recovery - critical for EMI-sensitive hard-switched and LLC converter designs.

Technical Context

This IGBT uses ST's PowerMESH process to achieve simultaneous optimization of static and dynamic performance: low Ron via dense cell layout and fast switching via reduced gate charge (Qg = 53 nC) and minimized Cres (36 pF). Its integrated diode exhibits trr = 31 ns and Irrm = 2 A under 100 A/μs di/dt, enabling zero-voltage transition support without external snubbers.

The device operates across TJ = -55 °C to 150 °C with RthJC = 0.95 °C/W (IGBT), and is rated for ICL = 40 A latching current at Vclamp = 480 V - confirming robustness in overcurrent fault conditions typical in servo drives and industrial inverters.

Key Specifications

Parameter Value and Actual Design Meaning
VCES 600 V - supports 400 V AC input rectified bus with 50% safety margin for surge transients in PFC stages.
IC (TC = 100 °C) 19 A - continuous output current capability at heatsink temperature relevant to enclosed motor drive enclosures.
VCE(sat) 1.8 V (typ. @ 12 A, 15 VGE) - reduces conduction loss to ≤21.6 W at full load, easing thermal design vs. standard 2.2 V IGBTs.
td(off) + tf 170 ns (97 ns + 73 ns) - enables >100 kHz switching in hard-switched topologies while maintaining <1% dead-time loss.
Qrr 30 nC (@ 25 °C) - limits diode reverse recovery energy to <1.2 μJ, suppressing voltage overshoot during commutation in half-bridge legs.
Eoff 189 μJ (@ 390 V, 3 A) - quantifies turn-off loss independent of gate resistance, enabling accurate thermal modeling in variable-speed drives.
RthJC 0.95 °C/W - allows direct mounting to aluminum heatsinks with ≤100 W dissipation before exceeding TJmax = 150 °C.

Pinout & Package

STGP19NC60HD is housed in a TO-220 package with isolated tab (pin 2 = collector tab, electrically connected to collector terminal). The package features single-side heat transfer through the metal tab and three leads: Gate (G), Collector (C), Emitter (E).

Pin/Terminal Circuit Role Design Meaning
Pin 1 (G) Gate Control input requiring ±20 V max; 53 nC total gate charge dictates 10 Ω gate resistor for ~500 ns rise time.
Pin 2 (Tab) Collector Electrically tied to internal collector; must be insulated from heatsink unless system topology requires common-collector configuration.
Pin 3 (E) Emitter Reference node for gate drive and current sensing; low-inductance PCB routing essential to avoid shoot-through during fast switching.

Key Features

Feature Design Value
Very soft ultra-fast recovery diode trr = 31 ns, Qrr = 30 nC, Irrm = 2 A - eliminates voltage spikes and reduces EMI filter size in bridge-leg commutation.
Low VCE(sat) with stable tempco 1.8 V @ 25 °C, 1.6 V @ 125 °C - improves efficiency across ambient range without thermal runaway risk.
Optimized switching energy balance Eon = 85 μJ, Eoff = 189 μJ - favors lower turn-off loss critical for high-duty-cycle PFC applications.
Robust RBSOA Rated for ICL = 40 A at Vclamp = 480 V - sustains short-circuit events up to 10 μs in motor phase-leg protection.
ECOPACK-compliant TO-220 Lead-free, RoHS-compliant package with qualified Pb-free soldering profile - meets industrial environmental compliance requirements.

Applications

Industrial Motor Drives Resonant LLC Converters

Use Scenario: 3-phase inverter stage in 0.75–2.2 kW servo drives operating at 8–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side/low-side switch in IGBT half-bridge modules, handling bidirectional regenerative braking current via integrated diode.

Use Value: Soft diode recovery (trr = 31 ns) prevents cross-conduction-induced shoot-through during dead-time transitions, improving reliability over discrete IGBT+diode solutions.

Use Scenario: Primary-side switch in 300–500 W server PSU LLC resonant converters with 250–400 kHz operating frequency.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) enabled by ultra-low Qrr and fast tf, reducing switching loss and enabling higher power density.

Use Value: Qrr = 30 nC minimizes capacitive discharge loss during ZVS turn-on, increasing efficiency by ≥0.8% at full load vs. standard 600 V IGBTs.

Active PFC Boost Stages High-Frequency Induction Heaters

Use Scenario: Continuous conduction mode (CCM) boost PFC in 1–2 kW telecom rectifiers switching at 65–100 kHz.

IC Role / Device Role / Timing Role: Main switching element controlling inductor current ripple and input current shaping; diode conducts during MOSFET off-time.

Use Value: Low VCE(sat) (1.8 V) reduces conduction loss by 22% vs. 2.2 V alternatives, directly lowering thermal stress on heatsink and fan requirements.

Use Scenario: Full-bridge inverter in 10–20 kW induction heating systems operating at 20–50 kHz with high di/dt demands.

IC Role / Device Role / Timing Role: High-current switching device managing rapid current reversal; integrated diode handles freewheeling during resonant tank zero-crossings.

Use Value: (di/dt)on = 1600 A/μs ensures minimal current rise delay, preserving precise phase control and minimizing reactive power loss in tank circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar very fast IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGW19NC60HD TO-247 package, RthJC = 0.9 °C/W, IC = 21 A @ TC = 100 °C - lower thermal resistance but larger footprint. Better suited for forced-air-cooled 3 kW+ inverters where heatsink contact area exceeds TO-220 limits. Select when thermal budget is tighter than board space constraints; requires rework of mechanical mounting and gate drive loop layout.
IXGH15N60B3D1 15 A/600 V, Qg = 42 nC, VCE(sat) = 2.1 V - lower gate charge but higher conduction loss and no soft diode. Acceptable in cost-sensitive non-resonant SMPS where diode recovery is managed externally. Choose only if diode softness is not required and gate drive power reduction is prioritized over conduction efficiency.

Compared with STGW19NC60HD and IXGH15N60B3D1, STGP19NC60HD uniquely balances TO-220-mountable form factor, soft diode behavior, and sub-2 V saturation voltage - making it optimal for space-constrained, EMI-sensitive 1–2 kW industrial power stages.

Availability

STGP19NC60HD is available at Aetrix Electronics and suitable for high-frequency motor controls, active PFC boost stages, and resonant LLC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for STGP19NC60HD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT family, engineered specifically for high-efficiency, high-frequency power conversion in motor drives and switched-mode power supplies where switching speed and conduction loss must be co-optimized.

FAQ

What is the maximum gate-emitter voltage rating for STGP19NC60HD?

The absolute maximum VGE is ±20 V per Table 1. Operation beyond ±15 V risks irreversible gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and prevent Miller-induced false triggering in bridge configurations.

Can STGP19NC60HD replace STGB19NC60HDT4 in a D²PAK-based design?

No - STGP19NC60HD uses TO-220 packaging with different thermal interface, lead spacing, and mounting hole pattern. Direct replacement would require PCB redesign, heatsink retooling, and gate drive loop re-optimization due to higher inductance in TO-220 leads versus surface-mount D²PAK.

What is the diode's reverse recovery behavior at elevated junction temperature?

At TJ = 125 °C, trr increases to 59 ns and Qrr rises to 102 nC (Table 7), doubling recovery charge and extending voltage overshoot duration. This necessitates increased snubber sizing or reduced switching frequency in high-ambient environments like enclosed motor drives.

Is STGP19NC60HD suitable for short-circuit ruggedness testing per IEC 60747-9?

Yes - it is rated for ICL = 40 A at Vclamp = 480 V (80% VCES) with RG = 10 Ω and VGE = 15 V (Table 1 footnote 2), meeting minimum 10 μs short-circuit withstand time requirements for industrial inverters under standardized test conditions.

STGP19NC60HD Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
PowerMESH™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
40 A
Current - Collector Pulsed (Icm):
60 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 12A
Power - Max:
130 W
Switching Energy:
85µJ (on), 189µJ (off)
Input Type:
Standard
Gate Charge:
53 nC
Td (on/off) @ 25°C:
25ns/97ns
Test Condition:
390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr):
31 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STGP19NC60HD FAQ

1.How can I place an order for STGP19NC60HD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP19NC60HD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP19NC60HD reliable?

The price and inventory of STGP19NC60HD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP19NC60HD is usually 5 days.

3.What payment methods are accepted for STGP19NC60HD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP19NC60HD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP19NC60HD?

STGP19NC60HD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP19NC60HD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP19NC60HD?

For technical support, including STGP19NC60HD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP19NC60HD requirements.

6.How does Aetrix verify that STGP19NC60HD is sourced from the original manufacturer or authorized distributors?

All STGP19NC60HD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP19NC60HD meets industry standards.

7.What is the process for return or replacement of STGP19NC60HD?

All STGP19NC60HD units undergo pre-shipment inspection (PSI). If there is an issue with STGP19NC60HD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP19NC60HD part is unused and in its original packaging.

Return procedure for STGP19NC60HD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STGP19NC60HD Tags

  • STGP19NC60HD
  • STGP19NC60HD PDF
  • STGP19NC60HD Datasheet
  • STGP19NC60HD Specifications
  • STGP19NC60HD Images
  • STMicroelectronics
  • STMicroelectronics STGP19NC60HD
  • Buy STGP19NC60HD
  • STGP19NC60HD Price
  • STGP19NC60HD Distributor
  • STGP19NC60HD Supplier
  • STGP19NC60HD Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER