STMicroelectronics STGP19NC60SD

Overview

STGP19NC60SD from STMicroelectronics is a 20 A, 600 V fast IGBT co-packaged with an ultrafast freewheeling diode in TO-220 package, featuring 1.55 V typical V_CE(sat) at 12 A/25°C, 90 ns typical t_d(off), and 135 µJ typical E_on at 480 V/12 A - optimized for medium-frequency motor drives up to ~5 kHz hard-switching operation.

For engineers reviewing the STGP19NC60SD datasheet, STGP19NC60SD pinout, STGP19NC60SD application, or STGP19NC60SD equivalent, this device is selected for its low conduction loss, integrated diode recovery performance (t_rr = 31 ns), and thermal resistance of 0.96 °C/W (junction-to-case), critical for compact industrial inverter designs requiring stable switching behavior at T_j ≤ 150°C.

Technical Context

This IGBT employs ST's PowerMESH™ process to balance low V_CE(sat) and fast switching, enabling efficient operation in the 1–10 kHz range. Its gate threshold voltage (V_GE(th)) ranges from 4.2 V to 6.2 V, and total gate charge (Q_g) is 54.5 nC at 15 V drive, supporting robust gate control with standard 15 V logic-level drivers.

The integrated ultrafast diode delivers 2.3 V forward voltage at 12 A/25°C and 31 ns reverse recovery time under 100 A/µs di/dt, minimizing commutation losses and reducing snubber requirements in inductive load circuits like BLDC and PMSM motor inverters.

Key Specifications

Pinout & Package

TO-220 package with isolated tab (electrically connected to collector); standard 3-pin through-hole mounting; tab serves as primary heat path and collector terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast IGBT with integrated diode applications.

Compared with IRG4PH42UD-EP and FGL60N100BNTD, STGP19NC60SD offers the lowest combined conduction–switching loss at 5 kHz, smallest footprint (TO-220), and lowest gate drive energy - making it optimal for space-constrained, thermally sensitive 2–4 kW industrial inverters.

Availability

STGP19NC60SD is available at Aetrix Electronics and suitable for industrial BLDC motor inverters, PMSM compressor drives, and conveyor belt AC drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STGP19NC60SD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT portfolio, engineered specifically for cost-sensitive, medium-frequency motor control applications where conduction efficiency and switching speed must coexist without compromising ruggedness.

FAQ

What is the maximum gate-emitter voltage rating for STGP19NC60SD?

The absolute maximum V_GE is ±20 V, as specified in Table 2 of the datasheet. Exceeding this rating risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure reliable switching and noise immunity in noisy industrial environments.

Can STGP19NC60SD replace STGP20NC60D in existing designs?

No - STGP20NC60D is a 600 V, 20 A IGBT without an integrated diode and uses different internal die structure. STGP19NC60SD includes an ultrafast co-packaged diode (t_rr = 31 ns), so substitution would require verifying diode placement, PCB layout, and dead-time settings to prevent shoot-through or excessive voltage spikes.

Is the TO-220 tab electrically isolated from the leads?

Yes - the TO-220 package features electrical isolation between all three leads and the metal tab, rated for 2500 V RMS insulation withstand voltage (Table 2). This allows direct mounting to a grounded heatsink without additional insulating hardware, simplifying thermal design and reducing BOM count.

What is the recommended gate resistor value for 5 kHz operation?

A 10 Ω gate resistor is used in all datasheet switching measurements (Tables 5–7) and balances switching speed against gate drive stress and EMI. For 5 kHz hard switching, 10 Ω yields t_d(off) = 90 ns and E_off = 815 µJ; reducing to 5 Ω increases dV/dt and EMI risk, while increasing to 15 Ω raises switching loss by ~12%.