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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGP19NC60WD

Name: STGP19NC60WD
Brand: STMicroelectronics
SKU: STGP19NC60WD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGP19NC60WD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: STGP19NC60WD.pdf

Description:: IGBT 600V 40A 125W TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGP19NC60WD from STMicroelectronics is an N-channel 600 V, 19 A ultra-fast PowerMESH™ IGBT in TO-220 package, featuring 2.5 V max V_CE(sat) at 12 A and 125 °C, 1180 pF C_ies, and integrated ultra-soft antiparallel diode with 31 ns t_rr at 25 °C-designed for high-frequency hard-switched and resonant SMPS, PFC, and UPS inverters.

For engineers reviewing the STGP19NC60WD datasheet, STGP19NC60WD pinout, STGP19NC60WD application, or STGP19NC60WD equivalent, key selection criteria include gate charge (53 nC), thermal resistance (1.0 °C/W j-case), soft recovery diode performance, and TO-220 mechanical compatibility in compact power converters requiring <100 kHz switching with low cross-conduction risk.

Technical Context

This IGBT employs ST's patented PowerMESH™ strip layout for high-voltage ruggedness and optimized dynamic behavior. Its low C_res/C_ies ratio (26/1180 ≈ 0.022) minimizes Miller-induced turn-on susceptibility, while the co-packaged diode delivers 1.9 V forward voltage at 12 A and 31 ns reverse recovery time at 25 °C.

The device operates with ±20 V gate-emitter rating and supports 15 V gate drive; its 125 W total dissipation at T_C = 25 °C and 22 A continuous collector current at T_C = 100 °C enable stable conduction in thermally constrained industrial power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 400 V AC input rectified systems with margin.
V_CE(sat) max	2.5 V @ 12 A, 125 °C - Enables <1.5 W conduction loss at rated current, reducing heatsink requirements.
C_ies	1180 pF @ 25 V - Sets gate drive strength requirement (~53 nC total Q_g) for <100 ns switching transitions.
t_rr (diode)	31 ns @ 12 A, 25 °C - Limits diode reverse recovery energy and EMI in ZVS/ZCS topologies.
R_thj-case	1.0 °C/W - Allows 125 °C junction operation with ≤125 °C case temperature under 125 W dissipation.
I_C cont.	22 A @ T_C = 100 °C - Supports sustained 1.5 kW output in 3-phase motor drives with forced-air cooling.
Q_g	53 nC @ V_GE = 15 V - Requires ≥2 A peak gate driver for 25 ns rise time with 10 Ω external resistor.

Pinout & Package

STGP19NC60WD uses a standard 3-pin TO-220 package with isolated tab (collector-connected). Pin 1 is Gate, Pin 2 is Collector (tab), Pin 3 is Emitter. The package meets ECOPACK® environmental compliance with lead-free second-level interconnect.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls IGBT conduction via 15 V logic-level drive; requires low-inductance gate loop to suppress oscillation.
Pin 2 (C)	Collector (tab)	High-side power node; electrically connected to metal tab-must be insulated from heatsink unless floating topology.
Pin 3 (E)	Emitter terminal	Reference node for gate drive and current sensing; shared emitter path affects noise coupling in half-bridge layouts.

Key Features

Feature	Design Value
Ultra-fast PowerMESH™ structure	Enables reliable 50–100 kHz hard-switching with low tail current and reduced E_off vs. conventional trench IGBTs.
Low C_res/C_ies ratio (0.022)	Minimizes dv/dt-induced false turn-on risk without snubbers in bridge configurations.
Very soft ultra-fast recovery diode	31 ns t_rr, 30 nC Q_rr at 25 °C ensures low EMI and minimal voltage overshoot during commutation.
ECOPACK® compliant packaging	Lead-free soldering compatible with JEDEC JESD97; RoHS and REACH compliant for global production.

Applications

Motor Drive Inverters

Industrial SMPS

Use Scenario: 3-phase 2–5 kW variable-speed drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Main switching device in 6-step or SVM inverter leg; handles 16–20 kHz PWM with soft-diode commutation.

Use Value: Low V_CE(sat) and soft diode reduce thermal stress on heatsink and eliminate need for external fast diodes.

Use Scenario: 1–3 kW telecom and server front-end PFC boost converters.

IC Role / Device Role / Timing Role: Active switch in continuous conduction mode (CCM) boost stage operating at 65–100 kHz.

Use Value: 53 nC Q_g and 1180 pF C_ies allow efficient gate drive with standard 2 A drivers and minimal dead-time penalty.

UPS Systems

Resonant Converters

Use Scenario: Online double-conversion UPS output inverter (1–2 kVA) with battery backup.

IC Role / Device Role / Timing Role: High-side switch in full-bridge inverter delivering clean 50/60 Hz sine wave via SPWM.

Use Value: 600 V V_CES and 22 A I_C @ 100 °C support 230 VAC output with 20% overvoltage margin and thermal headroom.

Use Scenario: LLC resonant DC-DC converter in EV charging stations and industrial power supplies.

IC Role / Device Role / Timing Role: Primary-side switch synchronized to zero-voltage switching (ZVS) transitions at 200–500 kHz.

Use Value: Ultra-low C_res (26 pF) enables robust ZVS across wide load range without auxiliary circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW19NC60WD	Same die, TO-247 package; R_thj-case = 0.95 °C/W vs. 1.0 °C/W; 23 A I_C @ 100 °C vs. 22 A.	Higher power density and thermal headroom; requires larger PCB footprint and heatsink mounting.	Select when >125 W dissipation or >22 A continuous current is required; otherwise TO-220 suffices.
IRG4PH42UD	600 V, 20 A, TO-247; V_CE(sat) = 2.7 V @ 12 A; C_res/C_ies = 0.031; t_rr = 42 ns.	Slightly higher conduction loss and slower diode; less immune to cross-conduction in high-dv/dt bridges.	Acceptable where lower cost or legacy design reuse is prioritized over soft switching performance.

Compared with STGW19NC60WD and IRG4PH42UD, STGP19NC60WD offers optimal balance of TO-220 form factor, ultra-low C_res/C_ies, and soft diode recovery-making it preferred for space-constrained, high-frequency PFC and inverter designs where EMI and thermal management are critical.

Availability

STGP19NC60WD is available at Aetrix Electronics and suitable for high-frequency motor controls, industrial SMPS, and UPS systems requiring stable component supply and long-term manufacturing continuity.

Supply support for STGP19NC60WD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT family-engineered specifically for high-efficiency, high-frequency power conversion in SMPS, PFC, and motor drive applications where soft switching and low EMI are essential.

FAQ

What is the maximum gate-emitter voltage rating for STGP19NC60WD?

The absolute maximum V_GE is ±20 V, with recommended operating gate drive at +15 V for turn-on and –5 V to –10 V for turn-off. Exceeding ±20 V risks permanent gate oxide damage, and operation below –5 V may increase switching losses without improving reliability.

Does STGP19NC60WD include an integrated diode, and what are its key recovery parameters?

Yes-it integrates a monolithic ultra-soft fast recovery diode. At 12 A and 25 °C, it exhibits 31 ns reverse recovery time (t_rr), 30 nC reverse recovery charge (Q_rr), and 2.0 V typical forward voltage (V_F). These values degrade predictably at 125 °C (t_rr = 59 ns, Q_rr = 102 nC).

Can STGP19NC60WD replace STGP20N60 in existing designs?

No-STGP20N60 is a 600 V, 20 A MOSFET, not an IGBT. STGP19NC60WD has different gate drive requirements (15 V vs. 10 V), higher V_CE(sat) but lower switching losses at high current, and integrated diode functionality. Direct replacement would require gate driver, layout, and thermal redesign.

What is the thermal resistance from junction to case, and how does it impact heatsink selection?

R_thj-case is 1.0 °C/W maximum. For 125 W dissipation at 125 °C junction, the case must stay ≤125 °C, requiring a heatsink with R_thc-amb ≤ 0.8 °C/W if ambient is 50 °C-typically achieved with 100 mm × 100 mm × 25 mm extruded aluminum and forced airflow.

STGP19NC60WD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 12A

Power - Max:: 125 W

Switching Energy:: 81µJ (on), 125µJ (off)

Input Type:: Standard

Gate Charge:: 53 nC

Td (on/off) @ 25°C:: 25ns/90ns

Test Condition:: 390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr):: 31 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STGP19NC60WD FAQ

1.How can I place an order for STGP19NC60WD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP19NC60WD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP19NC60WD reliable?

The price and inventory of STGP19NC60WD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP19NC60WD is usually 5 days.

3.What payment methods are accepted for STGP19NC60WD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP19NC60WD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP19NC60WD?

STGP19NC60WD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP19NC60WD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP19NC60WD?

For technical support, including STGP19NC60WD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP19NC60WD requirements.

6.How does Aetrix verify that STGP19NC60WD is sourced from the original manufacturer or authorized distributors?

All STGP19NC60WD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP19NC60WD meets industry standards.

7.What is the process for return or replacement of STGP19NC60WD?

All STGP19NC60WD units undergo pre-shipment inspection (PSI). If there is an issue with STGP19NC60WD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP19NC60WD part is unused and in its original packaging.

Return procedure for STGP19NC60WD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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