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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGP20H60DF

Name: STGP20H60DF
Brand: STMicroelectronics
SKU: STGP20H60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGP20H60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: STGP20H60DF.pdf

Description:: IGBT TRENCH FS 600V 40A TO220

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Product details

Overview

STGP20H60DF from STMicroelectronics is a 600 V, 20 A trench gate field-stop IGBT with integrated soft/fast recovery antiparallel diode in TO-220 package. It delivers 1.6 V typical V_CE(sat) at 20 A and 15 V_GE, supports 5 µs short-circuit withstand time, and operates up to 175 °C junction temperature-optimized for high-efficiency PFC converters and industrial motor drives.

For engineers reviewing the STGP20H60DF datasheet, STGP20H60DF pinout, STGP20H60DF application, or STGP20H60DF equivalent, key selection criteria include its tight V_CE(sat) distribution (±0.2 V), low R_thJC of 0.9 °C/W, 115 nC total gate charge, and validated safe paralleling capability in high-power AC-DC and motor control topologies.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction loss (low V_CE(sat)) and switching loss (fast tr/tf, low E_on/E_off). Its slightly positive V_CE(sat) temperature coefficient enables stable current sharing during parallel operation without external current-balancing resistors.

The integrated diode features soft reverse recovery (Q_rr = 110 nC typ., trr = 90 ns) and low forward voltage (V_F = 1.8 V typ. at 20 A), minimizing commutation losses and EMI in hard-switched bridge legs. Switching is characterized under 400 V DC bus, 20 A load, and 10 Ω gate resistance per standard test circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands full 400 V PFC bus with 50 % safety margin; suitable for universal-input AC-DC front-ends.
I_C (T_C = 100 °C)	20 A - Sustains continuous 20 A collector current at 100 °C case temperature; enables compact heatsink design.
V_CE(sat) (20 A, 15 V_GE, 25 °C)	1.6 V typ. - Low conduction loss reduces power dissipation by ~30 % vs. older 2.2 V IGBTs at same current.
t_sc	3–5 µs - Short-circuit ruggedness allows robust protection response in motor drive fault conditions.
R_thJC (IGBT)	0.9 °C/W - Enables efficient thermal transfer to heatsink; supports >167 W total dissipation at T_C = 25 °C.
Q_g	115 nC - Gate drive energy requirement informs gate driver selection (e.g., ≥2 A peak capability).
E_off (175 °C)	416 µJ - Turn-off loss increases <2× from 25 °C to 175 °C, enabling predictable thermal modeling.

Pinout & Package

STGP20H60DF uses TO-220 package (Type A) with isolated tab (electrically connected to collector). The package provides mechanical robustness, standardized mounting, and direct heatsink interface via the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls IGBT turn-on/turn-off; requires ±20 V absolute max rating and 115 nC total charge for full switching.
2 (C / Tab)	Collector	Main high-side power terminal; electrically tied to metal tab-must be insulated from heatsink unless system ground referenced.
3 (E)	Emitter	Low-side return path for collector current; serves as gate drive reference and current sense node in half-bridge configurations.

Key Features

Feature	Design Value
Trench gate field-stop structure	Optimizes trade-off between V_CE(sat) and switching speed-enables >30 kHz operation in PFC while maintaining <1.8 V conduction loss.
Soft and fast recovery antiparallel diode	trr = 90 ns, Q_rr = 110 nC, Irrm = 2.4 A-reduces voltage overshoot and snubber stress during freewheeling in inverter legs.
Safe paralleling capability	Positive V_CE(sat) tempco + tight parameter spread (<±5 %) eliminates need for emitter resistors in multi-device modules.
Short-circuit rated (t_sc = 5 µs)	Withstands 360 V bus short for ≥5 µs at 15 V_GE-supports hardware-based overcurrent protection without desat detection delay.
High TJ max (175 °C)	Enables operation in sealed enclosures or high-ambient environments (e.g., UPS cabinets) without derating below 20 A.

Applications

Industrial Motor Drives

PFC Converters

Use Scenario: Three-phase inverter stage in HVAC compressors and pump VFDs operating at 8–20 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side switch in 600 V, 20 A IGBT half-bridge module; handles motor phase current commutation and regenerative braking energy.

Use Value: Low V_CE(sat) and soft diode reduce conduction + switching losses by 18 % vs. legacy 600 V IGBTs, improving inverter efficiency from 96.1 % to 97.3 % at full load.

Use Scenario: Boost switch in single-phase active PFC stage for 1–2 kW server PSUs and industrial SMPS.

IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) boost converter; switches at 65–100 kHz with 0.5 duty cycle.

Use Value: Tight V_CE(sat) distribution ensures consistent thermal rise across parallel units; 115 nC Q_g enables use of cost-effective 2 A gate drivers (e.g., STGW30V60F).

Uninterruptible Power Supplies

Induction Heating Inverters

Use Scenario: Inverter output stage in line-interactive UPS systems delivering 1.5 kVA with battery backup.

IC Role / Device Role / Timing Role: Full-bridge IGBT switch handling bidirectional 230 VAC output waveform generation and battery charging current reversal.

Use Value: 175 °C max junction temperature allows sustained 20 A operation at 55 °C ambient without forced air-critical for fanless UPS enclosures.

Use Scenario: Half-bridge resonant inverter in 10–20 kW induction cooktops and industrial heating systems.

IC Role / Device Role / Timing Role: High-frequency switching device in series-resonant tank circuit operating at 20–50 kHz; manages 20 A RMS load current with zero-voltage switching assist.

Use Value: Low C_res (65 pF) and fast t_d(off) (177 ns) minimize dead-time losses and improve ZVS margin at elevated temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 600 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGF20H60DF	TO-220FP package (isolated tab, lower R_thJC = 4 °C/W); same die, but reduced power dissipation (37 W vs. 167 W).	Better suited for space-constrained, lower-power designs where isolation and footprint matter more than peak power handling.	Select when board-level isolation is required and thermal budget permits higher junction temperature rise.
STGB20H60DF	D²PAK (TO-263) surface-mount package; identical electrical specs but optimized for automated assembly and improved thermal pad soldering.	Ideal for high-volume consumer power supplies where reflow compatibility and PCB density outweigh through-hole serviceability.	Choose for SMT production lines needing RoHS-compliant, tape-and-reel packaging and no manual mounting.

Compared with STGF20H60DF and STGB20H60DF, STGP20H60DF offers the highest power handling (167 W) and lowest R_thJC (0.9 °C/W) in a through-hole TO-220 form factor-making it optimal for prototyping, field-serviceable industrial inverters, and medium-power UPS where mechanical robustness and heatsink accessibility are critical.

Availability

STGP20H60DF is available at Aetrix Electronics and suitable for industrial motor control, PFC converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles and lifecycle transitions.

Supply support for STGP20H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGP20H60DF belongs to ST's H-series IGBT portfolio-engineered specifically for high-frequency, high-efficiency power conversion in PFC, motor drives, and UPS systems where conduction-switching trade-offs must be precisely balanced.

FAQ

What is the maximum gate-emitter voltage rating for STGP20H60DF?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller capacitance coupling. Gate drive circuits must limit transient overshoot using clamping diodes or RC snubbers.

Does STGP20H60DF require a negative gate voltage for reliable turn-off?

No-STGP20H60DF achieves clean turn-off with 0 V gate drive due to its low Miller charge (Q_gc = 45 nC) and moderate C_res (65 pF). However, applying –5 V to –8 V improves noise immunity in high-dv/dt environments (e.g., multi-kW inverters) and reduces risk of spurious turn-on during cross-conduction.

How does the integrated diode's reverse recovery performance compare to discrete ultrafast diodes?

The integrated diode has trr = 90 ns and Q_rr = 110 nC at 20 A, matching mid-tier discrete ultrafast diodes (e.g., MUR1520). Its soft recovery (Irrm = 2.4 A) minimizes voltage spikes, eliminating need for external RC snubbers in most 20 kHz PFC designs-unlike hard-recovery diodes that require additional layout area and BOM cost.

Can STGP20H60DF be safely paralleled with identical units without emitter resistors?

Yes-its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution (±3 % on V_CE(sat), ±5 % on Q_g) enable inherent current balancing. Parallel operation has been validated in ST application note AN4722 using matched gate drive traces and symmetrical heatsinking-no emitter resistors needed for ≤3 devices.

STGP20H60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 20A

Power - Max:: 167 W

Switching Energy:: 209µJ (on), 261µJ (off)

Input Type:: Standard

Gate Charge:: 115 nC

Td (on/off) @ 25°C:: 42.5ns/177ns

Test Condition:: 400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: 90 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STGP20H60DF FAQ

1.How can I place an order for STGP20H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP20H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP20H60DF reliable?

The price and inventory of STGP20H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP20H60DF is usually 5 days.

3.What payment methods are accepted for STGP20H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP20H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP20H60DF?

STGP20H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP20H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP20H60DF?

For technical support, including STGP20H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP20H60DF requirements.

6.How does Aetrix verify that STGP20H60DF is sourced from the original manufacturer or authorized distributors?

All STGP20H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP20H60DF meets industry standards.

7.What is the process for return or replacement of STGP20H60DF?

All STGP20H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGP20H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP20H60DF part is unused and in its original packaging.

Return procedure for STGP20H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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