STMicroelectronics STGP20V60DF
- Part No.:
- STGP20V60DF
- Manufacturer:
- STMicroelectronics
- Category:
- Single IGBTs
- Package:
- TO-220-3
- Datasheet:
-
STGP20V60DF.pdf
- Description:
- IGBT 600V 40A 167W TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,648
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STGP20V60DF from STMicroelectronics is a 600 V, 20 A very high-speed trench gate field-stop IGBT with integrated antiparallel diode in TO-220 package. It delivers low saturation voltage (1.8 V typ. @ IC = 20 A), tail-less turn-off, and fast soft-recovery diode behavior-enabling high-efficiency operation in photovoltaic inverters and high-frequency power factor correction circuits.
For engineers reviewing the STGP20V60DF datasheet, STGP20V60DF pinout, STGP20V60DF application, or STGP20V60DF equivalent, key selection criteria include VCE(sat) temperature coefficient, RthJC (0.9 °C/W), reverse recovery charge (320 nC typ.), and safe paralleling capability enabled by tight parameter distribution.
Technical Context
This IGBT employs ST's proprietary trench gate + field-stop structure optimized for very high frequency converters (up to 50 kHz at TC = 100 °C). Its positive VCE(sat) temperature coefficient and low thermal resistance ensure stable current sharing during parallel operation.
The integrated diode features very fast soft recovery (trr = 40 ns typ. @ TJ = 25 °C), low Qrr (320 nC), and high dIrr/dt tolerance (910 A/μs), minimizing switching losses and EMI in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE(sat) | 1.8 V (typ.) @ IC = 20 A, TJ = 25 °C - enables low conduction loss in 20 A continuous applications |
| VCES | 600 V - supports DC bus voltages up to 400–450 V in PV inverters and UPS systems |
| Eoff | 130 μJ (typ.) @ VCC = 400 V, IC = 20 A - reduces turn-off energy in high-frequency switching |
| Qrr | 320 nC (typ.) @ IF = 20 A, TJ = 25 °C - lowers diode recovery loss and voltage overshoot |
| RthJC (IGBT) | 0.9 °C/W - allows 167 W total dissipation at TC = 25 °C, supporting compact heatsink design |
| tr / tf | 10 ns / 15 ns (typ.) - enables <50 ns total switching transition time for MHz-class gate drive tuning |
| TJ max | 175 °C - permits sustained operation in industrial ambient conditions without derating |
Pinout & Package
STGP20V60DF uses a standard TO-220 package (Type A) with isolated tab. The case serves as the collector terminal, enabling direct mounting to heatsinks with electrical isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Emitter (E) | Main emitter connection; referenced to control ground; carries full load current during conduction |
| Pin 2 | Gate (G) | Control input; requires 15 V drive for full enhancement; ±20 V absolute max rating |
| Pin 3 | Collector (C) | Connected to metal tab; high-side switching node; must be electrically isolated from heatsink unless system common |
Key Features
| Feature | Design Value |
|---|---|
| Tail-less switching off | Eliminates current tail, reducing Eoff and enabling clean zero-voltage switching (ZVS) transitions |
| Very fast soft recovery diode | trr = 40 ns (typ.), Qrr = 320 nC - minimizes reverse recovery stress on complementary switch |
| Positive VCE(sat) tempco | Ensures inherent current balancing in parallel configurations without external ballasting resistors |
| Tight parameter distribution | Guarantees consistent VCE(sat), Qg, and switching times across production lots for predictable system performance |
| Lead-free ECOPACK® | Meets RoHS and REACH requirements; TO-220 package complies with ST's highest environmental grade |
Applications
| Photovoltaic Inverters | Uninterruptible Power Supply (UPS) |
|---|---|
|
Use Scenario: DC-to-AC conversion stage in string inverters operating at 16–25 kHz switching frequency. IC Role / Device Role / Timing Role: High-side IGBT switch in three-phase inverter leg; handles 20 A RMS output current with integrated diode freewheeling. Use Value: Low VCE(sat) and fast diode recovery reduce total system losses by ≥3% vs. standard 600 V IGBTs at 25 °C ambient. |
Use Scenario: Online double-conversion UPS with bidirectional AC/DC and DC/AC stages. IC Role / Device Role / Timing Role: Inverter-stage switch managing battery-fed 400 V DC bus; operates with 100–200 μs dead-time constraints. Use Value: Tail-less turn-off and soft diode recovery prevent shoot-through risk and suppress dv/dt-induced EMI during mode transitions. |
| Power Factor Correction (PFC) | High-Frequency Welding |
|
Use Scenario: Boost PFC front-end in industrial SMPS rated ≥3 kW. IC Role / Device Role / Timing Role: Switching element in continuous conduction mode (CCM) boost converter; conducts 20 A peak current at 100 kHz. Use Value: 130 μJ Eoff and 116 nC Qg enable efficient operation at 100 kHz while maintaining <1.2 °C/W effective thermal impedance with standard TO-220 heatsinking. |
Use Scenario: Inverter-based arc welding power supply with 20–50 kHz output modulation. IC Role / Device Role / Timing Role: Primary-side H-bridge switch driving high-current transformer; subjected to repetitive 80 A pulsed loads. Use Value: 80 A ICP rating and 175 °C TJ max support short-duration overload handling without thermal shutdown during arc ignition. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGW20V60DF | TO-247 package; lower RthJC (0.75 °C/W); identical electrical specs | Better thermal performance for >30 A average current or forced-air cooling | Select when higher power density or extended lifetime at 150 °C junction required |
| IXYS IXGN20N60B3 | 600 V/20 A; faster tf (12 ns); higher VCE(sat) (2.0 V typ.); different gate threshold (4.5–6.5 V) | Higher gate drive sensitivity; less tolerant of gate noise in noisy industrial environments | Prefer where minimal turn-off time dominates over conduction loss; verify gate driver compatibility |
Compared with STGW20V60DF, STGP20V60DF trades 0.15 °C/W higher thermal resistance for lower cost and smaller footprint; versus IXGN20N60B3, it offers superior VCE(sat) stability and tighter parameter spread-critical for multi-unit parallel designs.
Availability
STGP20V60DF is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supplies, and high-frequency welding equipment requiring stable component supply across long production lifecycles.
Supply support for STGP20V60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications.
STGP20V60DF belongs to ST's "V-series" high-speed IGBT family, engineered specifically to balance conduction and switching losses for maximum efficiency in very high frequency converters above 20 kHz.
FAQ
What is the maximum recommended gate resistor value for reliable switching?
The datasheet specifies optimal gate resistance between 4.7 Ω and 10 Ω for 20 A operation at 175 °C. At RG = 10 Ω, Eon/Eoff remain balanced (430 μJ / 210 μJ), and dv/dt stays below 5 kV/μs-preventing false triggering. Values >15 Ω increase switching time disproportionately and raise Ets by >25%.
Can STGP20V60DF be used in parallel configurations without external emitter resistors?
Yes-its positive VCE(sat) temperature coefficient and tight parameter distribution (±5% VCE(sat), ±8% Qg) allow stable current sharing across up to four devices in parallel without emitter ballast resistors, provided layout symmetry and matched gate drive paths are maintained.
Is the integrated diode rated for continuous freewheeling in hard-switched PFC?
Yes-the antiparallel diode is rated for 20 A continuous forward current at TC = 100 °C and exhibits soft recovery (dIrr/dt = 910 A/μs typ.). Its 1.7 V VF (typ.) and 320 nC Qrr meet industry requirements for boost PFC diodes operating at 100 kHz with 0.5 duty cycle.
Does STGP20V60DF require negative gate voltage for robust turn-off?
No-turn-off is fully assured with 0 V gate drive. However, applying –5 V to –10 V during off-state improves noise immunity and reduces Miller-induced false turn-on in high-dv/dt environments (e.g., >1 kV/μs). The device tolerates –20 V VGE per absolute maximum ratings.
STGP20V60DF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 40 A
- Current - Collector Pulsed (Icm):
- 80 A
- Vce(on) (Max) @ Vge, Ic:
- 2.2V @ 15V, 20A
- Power - Max:
- 167 W
- Switching Energy:
- 200µJ (on), 130µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 116 nC
- Td (on/off) @ 25°C:
- 38ns/149ns
- Test Condition:
- 400V, 20A, 15V
- Reverse Recovery Time (trr):
- 40 ns
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STGP20V60DF FAQ
1.How can I place an order for STGP20V60DF through Aetrix?
Please submit a Request for Quotation (RFQ) for STGP20V60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STGP20V60DF reliable?
The price and inventory of STGP20V60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP20V60DF is usually 5 days.
3.What payment methods are accepted for STGP20V60DF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP20V60DF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STGP20V60DF?
STGP20V60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STGP20V60DF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STGP20V60DF?
For technical support, including STGP20V60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP20V60DF requirements.
6.How does Aetrix verify that STGP20V60DF is sourced from the original manufacturer or authorized distributors?
All STGP20V60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP20V60DF meets industry standards.
7.What is the process for return or replacement of STGP20V60DF?
All STGP20V60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGP20V60DF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STGP20V60DF part is unused and in its original packaging.
Return procedure for STGP20V60DF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STGP20V60DF Tags
;;2.jpg)
-
STGD3NB60SDT4
STMicroelectronics

-
HGTD1N120BNS9A
onsemi

-
STGF7NB60SL
STMicroelectronics

-
FGD5T120SH
onsemi

-
STGB3NC120HDT4
STMicroelectronics

-
IKP20N60TXKSA1
Infineon Technologies

-
STGW30H60DFB
STMicroelectronics

-
STGB30M65DF2
STMicroelectronics

-
IKB20N60TATMA1
Infineon Technologies

-
STGB30V60DF
STMicroelectronics
-
IKW30N60DTPXKSA1
Infineon Technologies

-
ISL9V3040P3
onsemi
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
