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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGP30H60DFB

Name: STGP30H60DFB
Brand: STMicroelectronics
SKU: STGP30H60DFB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGP30H60DFB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: STGP30H60DFB.pdf

Description:: TRENCH GATE FIELD-STOP IGBT, HB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGP30H60DFB from STMicroelectronics is a 600 V, 30 A trench gate field-stop IGBT with integrated fast soft-recovery antiparallel diode in TO-220 package. It delivers low saturation voltage (1.55 V typ. @ IC = 30 A), minimized tail current, and positive V_CE(sat) temperature coefficient for safe paralleling-optimized for photovoltaic inverters and high-frequency converters.

For engineers reviewing the STGP30H60DFB datasheet, STGP30H60DFB pinout, STGP30H60DFB application, or STGP30H60DFB equivalent, key selection criteria include junction-to-case thermal resistance (0.58 °C/W), total gate charge (149 nC), reverse recovery time (53 ns @ TJ = 25 °C), and HB-series conduction–switching loss trade-off.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to simultaneously reduce conduction losses (V_CE(sat) = 1.55 V) and switching losses (E_on = 383 µJ, E_off = 293 µJ @ TJ = 25 °C). Its slightly positive V_CE(sat) temperature coefficient ensures current sharing stability during parallel operation.

The co-packaged diode features very fast soft recovery (trr = 53 ns, Qrr = 384 nC @ TJ = 25 °C) and low forward voltage (VF = 2.0 V @ IF = 30 A), enabling efficient bidirectional energy handling in hard-switched bridge topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage under gate-open condition; supports 400 V DC-link systems with 50 % safety margin.
I_C (TC = 100 °C)	30 A - Continuous collector current rating at case temperature of 100 °C; defines usable current in thermally constrained enclosures.
V_CE(sat)	1.55 V (typ.) @ IC = 30 A, V_GE = 15 V - Low conduction loss enables <1.5 W static dissipation per device at rated current.
R_thJC (IGBT)	0.58 °C/W - Junction-to-case thermal resistance; allows ~175 W power dissipation before reaching 175 °C junction limit at 25 °C case.
Q_g	149 nC - Total gate charge; determines driver strength requirement (e.g., ≥2 A peak for 100 ns turn-on with 15 V swing).
t_rr (diode)	53 ns @ IF = 30 A, VR = 400 V - Fast reverse recovery minimizes commutation loss and voltage overshoot in inductive switching.
E_off	293 µJ @ V_CC = 400 V, I_C = 30 A - Measured turn-off energy defines heat generation during each switching cycle at rated conditions.

Pinout & Package

STGP30H60DFB uses TO-220 type A package with isolated tab (pin 3 = collector, pin 2 = emitter, pin 1 = gate). The metal tab is electrically connected to the collector terminal and serves as primary thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 15 V logic-level drive; requires ≥2 A peak current capability due to 149 nC Q_g.
2 (Emitter)	Power return / reference node	Serves as common source for gate drive and current sensing; must be low-inductance connection to minimize voltage spikes.
3 (Collector / Tab)	Main power output / thermal interface	Electrically tied to heatsink; requires insulating washer if heatsink is grounded; carries full load current and dissipates >90 % of device heat.

Key Features

Feature	Design Value
Trench gate field-stop structure	Enables simultaneous optimization of V_CE(sat) and switching speed-reducing both conduction and dynamic losses in 10–50 kHz converters.
Positive V_CE(sat) temperature coefficient	Ensures inherent current balancing when multiple devices operate in parallel without external ballasting resistors.
Very fast soft-recovery antiparallel diode	trr = 53 ns and softness factor >1.5 eliminate voltage ringing and reduce EMI in H-bridge freewheeling paths.
Tight parameter distribution	±5 % V_CE(sat) and ±8 % Q_g tolerance across production lots enable predictable gate drive design and thermal modeling.
Junction temperature range	–55 to +175 °C operation supports deployment in uncooled outdoor PV inverters and industrial motor drives with wide ambient swings.

Applications

Photovoltaic Inverters

High-Frequency UPS

Use Scenario: DC–AC conversion stage in string inverters with 400–600 V DC input and 50/60 Hz AC output.

IC Role / Device Role / Timing Role: Main switching device in two-level or three-level NPC topology; operates at 16–20 kHz with sinusoidal PWM.

Use Value: Low V_CE(sat) reduces conduction loss at partial load; fast diode enables zero-voltage switching assist in hybrid topologies.

Use Scenario: Inverter stage of online double-conversion UPS systems requiring high reliability and low THD.

IC Role / Device Role / Timing Role: Half-bridge switch in output stage; driven with dead-time-controlled complementary signals at 12–16 kHz.

Use Value: Tight parameter spread ensures balanced current sharing across parallel modules; 175 °C max TJ supports fanless operation.

Induction Heating

Industrial Motor Drives

Use Scenario: Resonant half-bridge in medium-frequency (20–80 kHz) induction cooktops and heating generators.

IC Role / Device Role / Timing Role: High-side and low-side switch in series-resonant tank; subjected to high di/dt (>1000 A/µs) and repetitive hard switching.

Use Value: Minimized tail current reduces turn-off loss at high frequency; soft diode prevents destructive dv/dt-induced shoot-through.

Use Scenario: Inverter output stage for 3–15 kW variable-frequency drives powering pumps, fans, and conveyors.

IC Role / Device Role / Timing Role: Six-pack IGBT module replacement in discrete designs; used in 3-phase 2-level inverter with space-vector modulation.

Use Value: R_thJC = 0.58 °C/W enables compact heatsink design; positive V_CE(sat) TC allows direct paralleling for higher current capacity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGB30H60DFB	D²PAK (TO-263) package; lower R_thJC (0.45 °C/W); same electrical specs except 0.5 V higher V_F on diode.	Better thermal performance in surface-mount designs; limited to ≤100 A pulsed current due to smaller copper area.	Select for SMT-based inverters where board space and automated assembly outweigh through-hole mechanical robustness.
IXYS IXGN30N60B3	600 V/30 A; higher V_CE(sat) (1.8 V); slower trr (120 ns); no integrated diode-requires external ultrafast diode.	Higher conduction loss increases thermal stress; external diode adds layout complexity and parasitic inductance.	Choose only if legacy design compatibility or specific gate drive voltage (20 V) requirements override efficiency targets.

Compared with STGB30H60DFB, STGP30H60DFB trades 0.13 °C/W higher thermal resistance for mechanical ruggedness and simplified mounting; versus IXGN30N60B3, it delivers 17 % lower conduction loss and eliminates diode selection risk via monolithic integration.

Availability

STGP30H60DFB is available at Aetrix Electronics and suitable for photovoltaic inverters, high-frequency UPS systems, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for STGP30H60DFB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGP30H60DFB belongs to the HB-series high-speed IGBT family, engineered specifically to maximize efficiency in medium-frequency (10–50 kHz) power conversion systems where conduction and switching losses must be jointly minimized.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG = 10 Ω for characterization, and simulation shows that values up to 22 Ω maintain acceptable turn-on delay (<45 ns) and E_on increase (<15 %) at TJ = 175 °C. Higher values risk excessive switching loss and thermal runaway under overload; values below 5 Ω require ≥3 A peak gate driver capability.

Can STGP30H60DFB be paralleled without external emitter resistors?

Yes-its positive V_CE(sat) temperature coefficient and tight parameter distribution (±5 %) enable stable current sharing across ≥3 devices without emitter ballast resistors. Layout symmetry (matched gate and emitter loop inductance) remains critical; mismatch >5 % in trace length degrades sharing by up to 20 %.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At TC = 100 °C, the forward-bias SOA limits continuous operation to 30 A at V_CE ≤ 2 V or 15 A at V_CE ≤ 10 V (single-pulse, 100 µs). Beyond this, secondary breakdown or thermal runaway occurs; derating curves in Figure 8 confirm 25 A maximum at 5 V V_CE under sustained conduction.

Does the integrated diode support synchronous rectification?

No-the antiparallel diode is optimized for freewheeling, not active control. Its 2.0 V forward voltage and 53 ns reverse recovery are incompatible with synchronous rectifier timing constraints. For SR implementation, discrete SiC Schottky diodes or MOSFETs with dedicated gate control are required.

STGP30H60DFB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 30A

Power - Max:: 260 W

Switching Energy:: 383µJ (on), 293µJ (off)

Input Type:: Standard

Gate Charge:: 149 nC

Td (on/off) @ 25°C:: 37ns/146ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: 53 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STGP30H60DFB FAQ

1.How can I place an order for STGP30H60DFB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP30H60DFB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP30H60DFB reliable?

The price and inventory of STGP30H60DFB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP30H60DFB is usually 5 days.

3.What payment methods are accepted for STGP30H60DFB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP30H60DFB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP30H60DFB?

STGP30H60DFB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP30H60DFB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP30H60DFB?

For technical support, including STGP30H60DFB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP30H60DFB requirements.

6.How does Aetrix verify that STGP30H60DFB is sourced from the original manufacturer or authorized distributors?

All STGP30H60DFB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP30H60DFB meets industry standards.

7.What is the process for return or replacement of STGP30H60DFB?

All STGP30H60DFB units undergo pre-shipment inspection (PSI). If there is an issue with STGP30H60DFB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP30H60DFB part is unused and in its original packaging.

Return procedure for STGP30H60DFB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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