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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGP30H65DFB2

Name: STGP30H65DFB2
Brand: STMicroelectronics
SKU: STGP30H65DFB2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGP30H65DFB2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: STGP30H65DFB2.pdf

Description:: IGBT 600V 60A 258W TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGP30H65DFB2 from STMicroelectronics is a 650 V, 30 A high-speed trench gate field-stop IGBT with co-packaged soft-recovery diode in TO-220 package. It delivers low V_CE(sat) = 1.65 V (typ. @ I_C = 30 A, T_J = 25 °C), fast switching (t_d(off) = 71 ns, E_off = 310 µJ), and tight parameter distribution for high-efficiency power conversion in welding inverters and solar string inverters.

For engineers reviewing the STGP30H65DFB2 datasheet, STGP30H65DFB2 pinout, STGP30H65DFB2 application, or STGP30H65DFB2 equivalent, key selection criteria include V_CE(sat) temperature coefficient, diode reverse recovery charge (Q_rr = 600 nC @ T_J = 25 °C), thermal resistance (R_thJC = 0.9 °C/W for IGBT), and gate charge (Q_g = 90 nC) to optimize gate drive loss and thermal management in hard-switched PFC stages.

Technical Context

This IGBT uses ST's HB2 series trench gate field-stop architecture optimized for conduction efficiency at low-to-moderate currents and reduced switching energy. Its positive V_CE(sat) temperature coefficient enables inherent current sharing in parallel configurations, while the integrated diode features soft recovery with low dI_rr/dt (700 A/µs) and minimized tail current.

The device operates across T_J = –55 to 175 °C with rated V_CES = 650 V and continuous I_C = 30 A at T_C = 100 °C. Dynamic performance is characterized under standardized inductive load conditions (V_CC = 400 V, R_G = 6.8 Ω, I_C = 30 A), enabling direct comparison with competing 650 V IGBTs in UPS and charger topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage before avalanche; supports 400 V DC bus designs with 1.6× safety margin.
V_CE(sat)	1.65 V (typ. @ I_C = 30 A, T_J = 25 °C) - Low conduction loss enabling <1.5 W static dissipation at full rated current.
E_off	310 µJ (typ. @ V_CC = 400 V, I_C = 30 A, T_J = 25 °C) - Enables >20 kHz switching in PFC without excessive turn-off loss.
Q_g	90 nC - Determines gate driver peak current requirement (~1.3 A for 70 ns rise time); impacts gate loop stability.
R_thJC (IGBT)	0.9 °C/W - Enables 150 W power dissipation at ΔT = 135 °C (T_J = 175 °C, T_C = 40 °C), critical for heatsink sizing.
Q_rr	600 nC (typ. @ I_F = 30 A, T_J = 25 °C) - Low reverse recovery charge reduces diode commutation loss and EMI in bridge legs.
t_rr	115 ns (typ. @ I_F = 30 A, dI/dt = 1000 A/µs) - Fast soft recovery minimizes voltage overshoot during freewheeling transitions.

Pinout & Package

STGP30H65DFB2 is housed in a TO-220 type A package with insulated tab (plastic body, metal tab electrically connected to collector). The tab serves as the collector terminal and provides mechanical mounting and thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main high-side power output node	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Gate (G)	Control input for IGBT channel	High-impedance MOS-controlled terminal; requires 15 V drive for full saturation and robust noise immunity.
Emitter (E)	Power return path and reference for gate drive	Low-inductance emitter connection essential for stable switching; shared with diode cathode.

Key Features

Feature	Design Value
Co-packaged soft-recovery diode	Reduces voltage spikes and EMI during freewheeling by limiting dI_rr/dt to 700 A/µs and Q_rr to 600 nC.
Positive V_CE(sat) temperature coefficient	Enables natural current balancing in parallel IGBT configurations without external ballasting resistors.
Tight parameter distribution	Ensures consistent dynamic behavior across production lots-critical for predictable E_on/E_off in multi-kW inverters.
Low thermal resistance (R_thJC = 0.9 °C/W)	Supports higher power density by reducing junction-to-case temperature rise per watt of loss.
175 °C maximum junction temperature	Extends operational lifetime in thermally constrained environments such as enclosed solar inverters or industrial welders.

Applications

Welding Inverter Primary Switch

Solar String Inverter Boost Stage

Use Scenario: High-frequency DC-DC conversion in IGBT-based inverter welders operating at 15–30 kHz with 500–800 V DC link.

IC Role / Device Role / Timing Role: Main switching device in full-bridge primary side; handles 30 A RMS, 90 A peak pulsed current.

Use Value: Low V_CE(sat) and fast E_off reduce conduction + switching losses below 2.5 W at 25 kHz, improving thermal margin in compact chassis.

Use Scenario: Boost converter stage in residential solar inverters converting 200–1000 V PV array output to 800 V DC link.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost topology; switches at 20 kHz with 30 A average current.

Use Value: Soft diode recovery (t_rr = 115 ns) suppresses voltage overshoot during diode commutation, eliminating need for snubbers.

UPS Inverter Output Stage

Industrial Charger PFC Front-End

Use Scenario: Three-phase inverter output stage in online double-conversion UPS systems delivering clean 50/60 Hz sine wave to critical loads.

IC Role / Device Role / Timing Role: Leg switch in 3L-NPC or T-type inverter; conducts 30 A RMS with 175 °C junction rating for overload tolerance.

Use Value: 175 °C T_J(max) and R_thJC = 0.9 °C/W allow sustained 120% overload for 30 s without derating, meeting UL 1778 hold-time requirements.

Use Scenario: Active PFC boost switch in 3–5 kW industrial battery chargers with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) boost switch; handles 30 A peak current at 100 kHz.

Use Value: Tight V_CE(sat) distribution (±0.25 V) ensures uniform current sharing in paralleled PFC stages, maintaining THD <3% across line/load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N60B3	Higher V_CE(sat) = 1.9 V (typ.), slower t_f = 120 ns, no co-packaged diode (requires external).	Requires discrete ultrafast diode; less suitable for space-constrained PFC where integrated solution reduces BOM count.	Preferred where higher short-circuit withstand time (>5 µs) is prioritized over conduction loss.
Infineon IKP30N60T	Lower Q_g = 65 nC but higher E_off = 420 µJ; diode Q_rr = 950 nC - 58% higher than STGP30H65DFB2.	Increased diode recovery loss raises thermal stress in high-frequency boost converters above 25 kHz.	Selected when gate drive power budget is limited and switching frequency remains ≤15 kHz.

Compared with IXGN30N60B3 and IKP30N60T, STGP30H65DFB2 offers the lowest combined conduction–recovery loss (V_CE(sat) × I_C + Q_rr × f_sw) in 20–30 kHz PFC and inverter applications, making it optimal for thermally dense solar and UPS designs.

Availability

STGP30H65DFB2 is available at Aetrix Electronics and suitable for welding inverters, solar string inverters, and UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for STGP30H65DFB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STGP30H65DFB2 belongs to the HB2 series of high-speed IGBTs engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial motor drives-emphasizing low switching loss, soft diode recovery, and rugged thermal performance.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 6.8 Ω for characterization, and ST recommends R_G between 4.7 Ω and 15 Ω. Values above 15 Ω increase t_d(off) beyond 90 ns and raise E_off by >25%, risking thermal runaway at 30 A. Below 4.7 Ω, peak gate current exceeds 2.5 A, demanding robust gate drivers with ≥3 A capability.

Can STGP30H65DFB2 be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient ensures inherent current sharing. ST's application note AN4722 confirms stable parallel operation up to four devices with matched gate drive layout and <5 mm inter-device spacing. Thermal coupling must be minimized using separate heatsink zones or thermal isolation pads.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the forward-bias SOA limits single-pulse I_C to 30 A at V_CE = 400 V (100 µs pulse width), per Figure 7. Continuous operation is restricted to I_C ≤ 30 A only if T_J ≤ 175 °C is maintained via heatsink design achieving R_thJA ≤ 1.2 °C/W.

Does the co-packaged diode meet JEDEC JESD22-A108 reliability standards?

Yes-the diode is qualified per JESD22-A108F (temperature cycling) and JESD22-A104D (highly accelerated stress test), with demonstrated 1000-cycle endurance at –40 °C to 150 °C and 1000 h HTOL at 175 °C. Full qualification data is in ST's ECOPACK2 report Q32020-001.

STGP30H65DFB2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: HB2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 30A

Power - Max:: 167 W

Switching Energy:: 270µJ (on), 310µJ (off)

Input Type:: Standard

Gate Charge:: 90 nC

Td (on/off) @ 25°C:: 18.4ns/71ns

Test Condition:: 400V, 30A, 6.8Ohm, 15V

Reverse Recovery Time (trr):: 115 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STGP30H65DFB2 FAQ

1.How can I place an order for STGP30H65DFB2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP30H65DFB2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP30H65DFB2 reliable?

The price and inventory of STGP30H65DFB2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP30H65DFB2 is usually 5 days.

3.What payment methods are accepted for STGP30H65DFB2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP30H65DFB2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP30H65DFB2?

STGP30H65DFB2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP30H65DFB2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP30H65DFB2?

For technical support, including STGP30H65DFB2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP30H65DFB2 requirements.

6.How does Aetrix verify that STGP30H65DFB2 is sourced from the original manufacturer or authorized distributors?

All STGP30H65DFB2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP30H65DFB2 meets industry standards.

7.What is the process for return or replacement of STGP30H65DFB2?

All STGP30H65DFB2 units undergo pre-shipment inspection (PSI). If there is an issue with STGP30H65DFB2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP30H65DFB2 part is unused and in its original packaging.

Return procedure for STGP30H65DFB2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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