STMicroelectronics STGP30M65DF2

Overview

STGP30M65DF2 from STMicroelectronics is a trench gate field-stop IGBT with integrated soft fast recovery antiparallel diode, rated 650 V / 30 A (TC = 100 °C), V_CE(sat) = 1.55 V (typ.) at 30 A and 15 V_GE, 6 µs short-circuit withstand time at 150 °C junction start temperature, and R_thJC = 0.58 °C/W for the IGBT die - deployed in motor control inverters requiring high reliability under overload.

For engineers reviewing the STGP30M65DF2 datasheet, STGP30M65DF2 pinout, STGP30M65DF2 application, or STGP30M65DF2 equivalent, this device is selected for 650 V industrial inverter stages where low conduction loss, robust short-circuit capability, safe paralleling behavior, and integrated diode recovery performance are critical design requirements.

Technical Context

This IGBT uses ST's M-series trench gate field-stop structure to balance conduction and switching losses while ensuring ≥6 µs short-circuit ruggedness at V_GE = 13 V and T_Jstart = 150 °C. Its positive V_CE(sat) temperature coefficient enables stable current sharing during parallel operation.

The co-packaged diode features soft reverse recovery (t_rr = 140 ns typ. at 25 °C, 244 ns at 175 °C) and low Q_rr (880 nC typ. at 25 °C, 2743 nC at 175 °C), minimizing voltage overshoot and EMI in hard-switched PFC and inverter freewheeling paths.

Key Specifications

Pinout & Package

Supplied in TO-220 type A package with insulated tab (plastic body, metal tab electrically connected to collector). Mounting hole centered on tab; pin 1 = gate, pin 2 = collector (tab), pin 3 = emitter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IXGN30N60B3 and IKP30N60T, STGP30M65DF2 delivers superior 650 V blocking margin, integrated soft diode functionality, and industry-leading 6 µs short-circuit ruggedness - making it the preferred choice for mission-critical industrial inverters where reliability and design simplicity are prioritized.

Availability

STGP30M65DF2 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and active front-end rectifiers requiring stable component supply, long-term lifecycle support, and traceable manufacturing origin.

Supply support for STGP30M65DF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's M-series IGBT portfolio, engineered specifically for high-efficiency 650 V inverter systems where low conduction loss, short-circuit ruggedness, and safe paralleling are mandatory design goals.

FAQ

What is the maximum gate-emitter voltage rating for STGP30M65DF2?

The absolute maximum V_GE is ±20 V, as specified in Table 2 of the datasheet. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V for reliable turn-on and noise-immune turn-off; a –5 V to +15 V gate drive is commonly used in industrial inverters to ensure robust Miller immunity.

Does STGP30M65DF2 include an integrated diode, and what are its key recovery characteristics?

Yes - it integrates a soft, fast-recovery antiparallel diode. At 25 °C and 30 A forward current, t_rr is 140 ns (typ.), Q_rr is 880 nC (typ.), and dI_rr/dt is 650 A/µs (typ.). At 175 °C, t_rr increases to 244 ns and Q_rr rises to 2743 nC, confirming soft recovery behavior across the full operating temperature range.

Can STGP30M65DF2 be operated at 30 A continuous current at 100 °C case temperature?

Yes - Table 2 explicitly states "I_C Continuous collector current at T_C = 100 °C" is 30 A. This rating assumes proper heatsinking to maintain T_C ≤ 100 °C and accounts for increased V_CE(sat) (1.95 V at 125 °C junction, 2.1 V at 175 °C) and reduced short-circuit time (6 µs at 150 °C start, down from 10 µs at lower T_J).

What is the thermal resistance from junction to case for the IGBT and diode sections?

R_thJC for the IGBT is 0.58 °C/W, and for the diode it is 1.47 °C/W (Table 3). These values are measured separately per die and reflect distinct thermal paths within the TO-220 package. The higher diode R_thJC indicates greater thermal challenge during freewheeling conduction, necessitating attention to average diode power dissipation in design thermal modeling.