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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGP30V60DF

Name: STGP30V60DF
Brand: STMicroelectronics
SKU: STGP30V60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGP30V60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: STGP30V60DF.pdf

Description:: IGBT 600V 60A 258W TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGP30V60DF from STMicroelectronics is a 600 V, 30 A trench gate field-stop IGBT with integrated ultra-fast soft-recovery antiparallel diode in D²PAK (TO-263) package. It delivers V_CE(sat) = 1.85 V (typ.) at I_C = 30 A and T_J = 25 °C, 175 °C maximum junction temperature, and 53 ns reverse recovery time (T_J = 25 °C), optimized for photovoltaic inverters and high-frequency PFC stages.

For engineers reviewing the STGP30V60DF datasheet, STGP30V60DF pinout, STGP30V60DF application, or STGP30V60DF equivalent, key selection criteria include its tight V_CE(sat) distribution for parallel operation, low R_thJC = 0.58 °C/W (IGBT), and tail-less switching behavior enabling efficient >20 kHz converter designs without snubber circuits.

Technical Context

This IGBT uses ST's proprietary V-series trench gate field-stop structure to balance conduction and switching losses. Its positive V_CE(sat) temperature coefficient ensures current sharing stability in paralleled configurations, while the monolithically integrated diode features soft recovery (dI_rr/dt = 788 A/µs typ.) and low Q_rr = 384 nC to minimize turn-on loss in hard-switched topologies.

The device targets high-efficiency, high-frequency power conversion where thermal robustness and dynamic consistency are critical: it maintains E_off = 233 µJ (T_J = 25 °C) and E_on = 383 µJ under 400 V, 30 A, 10 Ω gate drive conditions, with junction temperature range spanning –55 °C to +175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 600 V in boost PFC and inverter half-bridges without avalanche stress.
I_C (T_C = 100 °C)	30 A - Sustains continuous 30 A collector current at 100 °C case temperature, enabling compact heatsink design.
V_CE(sat) (T_J = 125 °C)	2.15 V - Low saturation voltage at elevated temperature reduces conduction loss in high-ambient industrial environments.
E_off (T_J = 175 °C)	378 µJ - Predictable turn-off energy at max junction temperature supports thermal margining in unattended systems.
trr (T_J = 25 °C)	53 ns - Ultra-fast diode recovery minimizes commutation loss and EMI in synchronous rectification and ZVS circuits.
R_thJC (IGBT)	0.58 °C/W - Low junction-to-case thermal resistance enables direct mounting on aluminum heatsinks without thermal interface material degradation.
Q_g	163 nC - Gate charge value informs gate driver sizing: requires ≥2 A peak drive capability for <100 ns switching transitions.

Pinout & Package

D²PAK (TO-263) package with exposed drain tab (pin 3) for low-inductance, high-current connection and thermal path. Three-terminal configuration: pin 1 = gate, pin 2 = emitter, pin 3 = collector/drain tab (electrically connected to IGBT collector and diode cathode).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal for IGBT turn-on/turn-off; requires ±20 V absolute max rating and 163 nC total charge for full enhancement.
Pin 2	Emitter	Common reference node for both IGBT and diode; carries full load current return path and must be low-inductance routed.
Pin 3 (TAB)	Collector / Diode Cathode	High-current output node shared by IGBT collector and antiparallel diode cathode; electrically tied to heatsink for thermal management.

Key Features

Feature	Design Value
Tail-less switching off	Eliminates minority-carrier storage tail, reducing E_off by ~35% vs conventional IGBTs and enabling clean zero-voltage switching transitions.
Very fast soft recovery diode	trr = 53 ns and dI_rr/dt = 788 A/µs ensure minimal voltage overshoot and reduced snubber loss during diode commutation.
Positive V_CE(sat) tempco	Enables stable current sharing across paralleled devices without external current-sensing or active balancing circuitry.
Tight parameter distribution	V_CE(sat) and switching times vary <±10%, allowing drop-in replacement across production lots without re-tuning gate drive or thermal design.
Low R_thJC (0.58 °C/W)	Reduces junction-to-heatsink thermal delta by >40% vs TO-220 equivalents, permitting higher power density in space-constrained PV inverters.

Applications

Photovoltaic Inverters

Uninterruptible Power Supply

Use Scenario: DC–AC inversion stage in string inverters operating at 16–25 kHz switching frequency with 600 V DC input.

IC Role / Device Role / Timing Role: High-side IGBT switch in three-phase inverter bridge, paired with complementary low-side device and integrated diode handling freewheeling current.

Use Value: Tail-less turn-off and 53 ns diode trr reduce total switching loss by 22% versus legacy 600 V IGBTs, directly improving inverter efficiency from 97.8% to 98.3% at 50% load.

Use Scenario: Online double-conversion UPS with bidirectional AC–DC rectifier and DC–AC inverter, requiring high reliability at 10–20 kHz.

IC Role / Device Role / Timing Role: Main switching element in IGBT-based buck-boost PFC front-end and inverter output stage, managing 30 A RMS load current.

Use Value: 175 °C max junction temperature and tight V_CE(sat) distribution allow derating-free operation in sealed cabinets with ambient up to 70 °C.

Power Factor Correction

Welding Equipment

Use Scenario: Active boost PFC stage in industrial SMPS delivering 3 kW at 400 V DC bus, switching at 100 kHz with interleaved topology.

IC Role / Device Role / Timing Role: Fast-switching IGBT in critical conduction mode (CRM) or transition-mode (TM) PFC, leveraging soft diode recovery to suppress EMI.

Use Value: Q_rr = 384 nC and soft recovery waveform reduce diode-induced voltage spikes, cutting EMI filter size by 30% and eliminating need for RC snubbers.

Use Scenario: Inverter-based arc welding power supply with variable-frequency output (20–100 kHz) and high peak current demands (≥120 A pulsed).

IC Role / Device Role / Timing Role: Primary switching device in full-bridge inverter driving resonant transformer, conducting 30 A continuous and 120 A pulsed collector current.

Use Value: Safe operating area supports 100 µs single-pulse I_C = 120 A at V_CE = 400 V, enabling robust short-circuit tolerance during arc ignition transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGB30V60DF	D²PAK package same as STGP30V60DF; identical electrical specs but marked GB30V60DF per datasheet DS9531 Rev 5.	No functional difference; used interchangeably in surface-mount designs with same footprint and thermal interface.	Select when standard D²PAK tape-and-reel packaging is required for automated assembly.
STGW30V60DF	TO-247 package; same V_CE(sat), trr, and E_off, but R_thJC = 0.45 °C/W (lower) and higher I_C rating (60 A @ T_C = 25 °C).	Better thermal performance and higher surge current capability; suited for forced-air-cooled or high-power-density designs.	Choose for through-hole mounting, higher thermal headroom, or designs requiring >30 A continuous conduction at elevated case temperatures.

Compared with STGP30V60DF, STGB30V60DF offers identical performance in identical packaging, while STGW30V60DF trades surface-mount convenience for superior thermal resistance and higher current headroom-making it optimal for thermally constrained or high-reliability industrial welders and UPS systems.

Availability

STGP30V60DF is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supplies, and high-frequency power factor correction systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STGP30V60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The STGP30V60DF belongs to ST's V-series trench gate field-stop IGBT product line, engineered specifically for very high frequency converters (20–100 kHz) where simultaneous optimization of conduction loss, switching loss, and thermal robustness is essential.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 10 Ω for all switching characterization tests. Using R_G > 15 Ω increases td(off) to >200 ns and raises E_off by over 25%, risking thermal runaway in high-frequency operation. For 20 kHz+ designs, ST recommends R_G = 8–12 Ω with a 2 A peak gate driver to maintain <100 ns switching transitions and controlled di/dt.

Can STGP30V60DF be paralleled without external current balancing?

Yes-its positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% V_CE(sat)) enable stable current sharing. Test data shows <±8% current imbalance between two devices at 60 A total load and T_J = 150 °C, provided layout symmetry and matched gate drive paths are maintained.

Is the integrated diode suitable for synchronous rectification?

No-the antiparallel diode is optimized for freewheeling, not synchronous rectification. Its VF = 2.0 V (typ.) at 30 A is too high for low-loss rectification; dedicated SiC Schottky diodes or MOSFETs are preferred. However, its soft recovery (dI_rr/dt = 788 A/µs) makes it ideal for IGBT-based hard-switched topologies where diode reverse recovery must be non-oscillatory.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the device supports 30 A continuous collector current up to V_CE = 200 V in linear mode (Figure 8). Beyond that, pulse width must be limited: for V_CE = 400 V, maximum single-pulse duration is 100 µs to stay within T_J = 175 °C limit, verified by SOA curves in DS9531 Figure 8.

STGP30V60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 30A

Power - Max:: 258 W

Switching Energy:: 383µJ (on), 233µJ (off)

Input Type:: Standard

Gate Charge:: 163 nC

Td (on/off) @ 25°C:: 45ns/189ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: 53 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STGP30V60DF FAQ

1.How can I place an order for STGP30V60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP30V60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP30V60DF reliable?

The price and inventory of STGP30V60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP30V60DF is usually 5 days.

3.What payment methods are accepted for STGP30V60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP30V60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP30V60DF?

STGP30V60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP30V60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP30V60DF?

For technical support, including STGP30V60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP30V60DF requirements.

6.How does Aetrix verify that STGP30V60DF is sourced from the original manufacturer or authorized distributors?

All STGP30V60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP30V60DF meets industry standards.

7.What is the process for return or replacement of STGP30V60DF?

All STGP30V60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGP30V60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP30V60DF part is unused and in its original packaging.

Return procedure for STGP30V60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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