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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGP3NB60FD

Name: STGP3NB60FD
Brand: STMicroelectronics
SKU: STGP3NB60FD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGP3NB60FD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: STGP3NB60FD.pdf

Description:: IGBT 600V 6A 68W TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGP3NB60FD from STMicroelectronics is a 600 V, 3 A N-channel PowerMESH™ IGBT in TO-220 package, optimized for high-frequency switching (<40 kHz) with low V_CE(sat) (1.9 V typ. @ 25°C), low gate charge (16 nC typ.), and integrated anti-parallel diode. It serves as a main switch in hard-switched and resonant SMPS and PFC stages.

For engineers reviewing the STGP3NB60FD datasheet, STGP3NB60FD pinout, STGP3NB60FD application, or STGP3NB60FD equivalent, key selection criteria include V_CE(sat) at 125°C, tail-current-inclusive E_off, thermal resistance (R_thj-case = 1.8 °C/W), and diode reverse recovery performance (t_rr = 45 ns @ 125°C).

Technical Context

This IGBT employs ST's patented strip layout for enhanced current handling and reduced switching losses. Its "D" suffix denotes inclusion of an integrated fast-recovery emitter-collector diode with t_rr = 45 ns and Q_rr = 70 nC at T_j = 125°C, enabling bidirectional conduction in half-bridge and synchronous rectification topologies.

The device features voltage-driven gate control (V_GE(th) = 3–5 V), high input impedance, and short-circuit rated operation. Switching is characterized under standardized 480 V / 3 A inductive load conditions with R_G = 10 Ω, yielding t_d(off) = 105 ns and E_off = 125 µJ at 25°C - values that double at 125°C due to tail current dependence on junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	600 V - supports 400 V DC bus designs with ≥50% safety margin against transients
V_CE(sat)	1.9 V (typ.) @ 3 A, 25°C - reduces conduction loss to ~5.7 W at full load
Q_g	16 nC (typ.) - enables efficient gate drive with <1 W average power at 100 kHz
R_thj-case	1.8 °C/W - allows 68 W dissipation at ΔT = 122°C case-to-junction rise
t_rr (Diode)	45 ns @ T_j = 125°C - limits diode commutation loss and EMI in ZVS circuits
E_off	125 µJ @ 25°C, 480 V, 3 A - defines minimum dead-time and snubber sizing in bridge legs
I_C (cont.)	3 A @ T_C = 100°C - sets heatsink requirement for continuous 200 W output inverters

Pinout & Package

STGP3NB60FD uses a standard TO-220 package (3-pin, vertical mounting, isolated tab). Pin 1 = Gate, Pin 2 = Collector (tab-connected), Pin 3 = Emitter. The metal tab is electrically connected to the collector and must be insulated from heatsink unless system topology permits common-collector referencing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Voltage-driven input requiring 15 V nominal drive; 100 nA leakage ensures low standby power
Pin 2 (Collector)	High-side power node	Internally bonded to metal tab; requires insulating washer when mounted to grounded heatsink
Pin 3 (Emitter)	Power return / reference	Serves as source for integrated diode; must be routed with low-inductance path to minimize switching overshoot

Key Features

Feature	Design Value
PowerMESH™ strip layout	Enables 3 A continuous current with 1.8 °C/W thermal resistance in TO-220, avoiding larger packages
Low V_CE(sat) + low Q_g	Simultaneously minimizes conduction and switching losses - critical for >20 kHz PFC stages
Integrated fast diode (D version)	Eliminates need for external anti-parallel diode in half-bridge motor drives and LLC resonant converters
Short-circuit rated	Withstands 10 µs fault at rated V_CE and T_j = 150°C - enables robust overcurrent protection without desat detection
High dV/dt immunity	Rated for 50 V/ns - suppresses false turn-on in high-noise industrial inverter environments

Applications

Motor Control Inverter

Active PFC Stage

Use Scenario: 3-phase BLDC inverter for HVAC compressors operating at 16–20 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main switching device in upper-leg position; synchronized with complementary lower-leg IGBTs.

Use Value: Low tail current (E_off = 125 µJ @ 25°C) reduces thermal stress during frequent commutation, extending MOSFET/IGBT lifetime.

Use Scenario: Boost-type active PFC in 1 kW server PSU with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter.

Use Value: Integrated diode with t_rr = 45 ns eliminates reverse recovery spikes, enabling stable zero-voltage switching at 65 kHz.

Induction Cooktop Half-Bridge

UPS Inverter Output Stage

Use Scenario: Resonant half-bridge driving 20–50 kHz LC tank in domestic induction cooktops.

IC Role / Device Role / Timing Role: One leg of asymmetrical half-bridge; conducts during resonant current peaks.

Use Value: V_CE(sat) = 1.9 V @ 25°C and 1.6 V @ 125°C maintains efficiency across wide ambient temperature range (−10°C to 70°C).

Use Scenario: 1 kVA online UPS with double-conversion architecture and 50/60 Hz sine-wave output.

IC Role / Device Role / Timing Role: Final H-bridge output stage switching at 12 kHz carrier frequency.

Use Value: Short-circuit rating allows 10 µs fault hold time - sufficient for digital controller to detect and disable gate drive before thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP4NC60HD	Higher I_C (4 A), lower Q_g (12 nC), same V_CE (600 V), DPAK package	Requires PCB-level thermal management instead of bolted heatsink; unsuitable for >3 A continuous loads	Select when board space is constrained and peak current ≤ 4 A with forced-air cooling
FGL40N60UNDF	600 V, 40 A, TO-220, no integrated diode, higher V_CE(sat) (2.2 V)	Lacks anti-parallel diode - mandates external ultrafast diode; better suited for high-current hard-switched inverters	Select when discrete diode placement is acceptable and I_C > 10 A is required

Compared with STGP4NC60HD and FGL40N60UNDF, STGP3NB60FD uniquely balances TO-220 thermal capability, integrated diode functionality, and sub-2 V saturation voltage - making it optimal for cost-sensitive 1–2 kW resonant and PFC designs where board area and component count are prioritized.

Availability

STGP3NB60FD is available at Aetrix Electronics and suitable for motor control inverters, active PFC modules, and induction heating systems requiring stable component supply across extended production lifecycles.

Supply support for STGP3NB60FD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STGP3NB60FD belongs to the PowerMESH™ IGBT family, engineered specifically for high-efficiency, high-frequency switching in energy conversion systems such as SMPS, PFC, and motor drives up to 40 kHz.

FAQ

What is the maximum gate-emitter voltage rating for STGP3NB60FD?

The absolute maximum V_GE is ±20 V. Operation above ±15 V risks accelerated gate oxide degradation, while below ±10 V may cause incomplete turn-on or increased V_CE(sat). Recommended gate drive is +15 V / −5 V to ensure robust noise immunity and fast switching transitions.

Does STGP3NB60FD require a negative gate voltage for reliable turn-off?

No - STGP3NB60FD turns off fully with 0 V gate drive due to its positive V_GE(th) (3–5 V) and low IGES (±100 nA). However, applying −5 V improves dV/dt immunity and reduces risk of spurious turn-on in high-noise bridge configurations.

Can STGP3NB60FD replace a MOSFET in a 100 kHz resonant converter?

No - its switching speed is optimized for <40 kHz operation. At 100 kHz, tail current dominates E_off, causing excessive heating. For >50 kHz, consider SiC MOSFETs or ST's newer trench-gate IGBTs like the STGW40H65DFB.

Is the metal tab of STGP3NB60FD electrically isolated from internal circuitry?

No - the TO-220 tab is internally connected to the collector terminal. Electrical isolation from the heatsink is mandatory unless the system design intentionally references the heatsink to high-side potential. Use ST's recommended mica or ceramic insulator with thermal grease.

STGP3NB60FD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 6 A

Current - Collector Pulsed (Icm):: 24 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 3A

Power - Max:: 68 W

Switching Energy:: 125µJ (off)

Input Type:: Standard

Gate Charge:: 16 nC

Td (on/off) @ 25°C:: 12.5ns/105ns

Test Condition:: 480V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr):: 45 ns

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STGP3NB60FD FAQ

1.How can I place an order for STGP3NB60FD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP3NB60FD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP3NB60FD reliable?

The price and inventory of STGP3NB60FD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP3NB60FD is usually 5 days.

3.What payment methods are accepted for STGP3NB60FD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP3NB60FD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP3NB60FD?

STGP3NB60FD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP3NB60FD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP3NB60FD?

For technical support, including STGP3NB60FD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP3NB60FD requirements.

6.How does Aetrix verify that STGP3NB60FD is sourced from the original manufacturer or authorized distributors?

All STGP3NB60FD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP3NB60FD meets industry standards.

7.What is the process for return or replacement of STGP3NB60FD?

All STGP3NB60FD units undergo pre-shipment inspection (PSI). If there is an issue with STGP3NB60FD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP3NB60FD part is unused and in its original packaging.

Return procedure for STGP3NB60FD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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