Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGP3NB60HD

Name: STGP3NB60HD
Brand: STMicroelectronics
SKU: STGP3NB60HD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGP3NB60HD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: STGP3NB60HD.pdf

Description:: IGBT 600V 10A 50W TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,889

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGP3NB60HD from STMicroelectronics is a 600 V, 3 A N-channel PowerMESH™ IGBT co-packaged with a TurboSwitch™ antiparallel diode in TO-220 package, optimized for high-frequency switching up to 50 kHz with low gate charge (21 nC), low V_CE(sat) (2.4 V @ 3 A), and integrated diode recovery time of 45 ns. It targets hard-switched and resonant SMPS and PFC stages.

For engineers reviewing the STGP3NB60HD datasheet, STGP3NB60HD pinout, STGP3NB60HD application, or STGP3NB60HD equivalent, key selection criteria include its 600 V blocking rating, 2.4 V saturation voltage at 3 A, 45 ns diode reverse recovery, 77 ns turn-off fall time, and thermal resistance of 2.5 °C/W (junction-to-case) - all critical for high-efficiency, compact power conversion designs.

Technical Context

This IGBT employs ST's patented strip layout for enhanced current handling and reduced tail current during turn-off, enabling stable high-frequency operation without sacrificing conduction loss. Its gate threshold voltage (3–5 V) and low input capacitance (235 pF) support robust drive compatibility with standard 15 V gate drivers.

The integrated TurboSwitch™ diode features soft recovery (I_RRM = 2.7 A, Q_RR = 70 nC at 125 °C), minimizing voltage overshoot and EMI in bridge configurations. Safe operating area (SOA) is defined up to 24 A pulsed current with derating above 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Enables use in 400 V DC bus systems with 50 % voltage margin for transient clamping.
V_CE(sat)	2.4 V max @ 3 A, 25 °C - Limits conduction loss to ≤7.2 W at rated current, easing thermal design.
Q_g	21 nC - Reduces gate drive power requirement and enables >50 kHz switching with low driver dissipation.
t_f	77 ns @ T_j = 125 °C - Supports fast turn-off with minimal cross-conduction loss in half-bridge topologies.
R_th(j-c)	2.5 °C/W - Allows 50 W total dissipation at 25 °C case temperature, supporting compact heatsink integration.
t_rr	45 ns @ T_j = 125 °C - Enables clean commutation with low diode-induced voltage spikes in PFC boost stages.
I_C (100 °C)	6 A - Sustains continuous operation in enclosed industrial environments without forced airflow.

Pinout & Package

STGP3NB60HD uses a TO-220 package with insulated tab (pin 2 connected to emitter). The device has three terminals: Collector (pin 1), Gate (pin 2), Emitter (pin 3). Pin 2 is electrically isolated from the metal tab, enabling direct mounting to heatsinks without insulating hardware.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab side)	Collector	Main high-side power terminal; connects to DC bus or transformer primary; carries full load current and withstands 600 V transients.
Pin 2 (Middle)	Gate	Isolated control input; requires 15 V drive for full enhancement; 21 nC total charge defines driver sizing.
Pin 3 (Opposite tab)	Emitter	Power return path and gate reference; shared node for IGBT and integrated diode cathode; must be low-inductance layout.

Key Features

Feature	Design Value
PowerMESH™ strip layout	Enables uniform current distribution and 6 A continuous current at 100 °C junction temperature.
TurboSwitch™ antiparallel diode	Provides soft-recovery (t_rr = 45 ns) and low Q_RR (70 nC), reducing snubber losses in PFC circuits.
Low gate charge (21 nC)	Permits use of low-power gate drivers (e.g., STGW30V60DF) and supports >50 kHz operation with <100 mW drive loss.
High-frequency optimization (suffix "H")	Reduces t_fall by 30 % vs standard IGBTs, enabling smaller magnetics and lower EMI in SMPS designs.
Integrated thermal protection margin	R_th(j-c) = 2.5 °C/W allows 50 W dissipation at 25 °C case, supporting reliable operation under sustained 3 A loads.

Applications

Motor Drive Inverter Stage

Active PFC Boost Converter

Use Scenario: 3-phase inverter driving 0.75 kW BLDC motor in HVAC fan module with 20 kHz PWM.

IC Role / Device Role / Timing Role: High-side switch in 6-step commutation; handles 3 A RMS phase current and 600 V DC link transients.

Use Value: Low V_CE(sat) (2.4 V) reduces conduction loss by 35 % vs comparable 600 V MOSFETs, improving system efficiency to >96 %.

Use Scenario: Single-phase active PFC front-end in LED driver powering 120 W output with THD <5 %.

IC Role / Device Role / Timing Role: Boost switch operating at 65 kHz with zero-current switching assistance from integrated diode.

Use Value: 45 ns diode t_rr and soft recovery minimize voltage ringing and EMI filter size, cutting BOM cost by $0.85.

Resonant LLC Half-Bridge

Industrial SMPS Primary Switch

Use Scenario: 300 W LLC resonant converter in medical power supply requiring low-noise operation and 250 kHz effective switching.

IC Role / Device Role / Timing Role: Upper-leg switch in asymmetric half-bridge; conducts 3 A peak with 480 V V_CC bias.

Use Value: 77 ns t_f and 53 ns t_d(off) enable precise dead-time control, preventing shoot-through while maintaining ZVS over full load range.

Use Scenario: 500 W open-frame SMPS for factory automation controller with 400 V DC input and 24 V/20 A output.

IC Role / Device Role / Timing Role: Primary-side hard-switched IGBT in forward topology; operates at 35 kHz with 6 A peak current.

Use Value: Co-packaged diode eliminates external freewheeling diode, reducing PCB area by 18 mm² and assembly steps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP7NC60HD	7 A rated current, higher Q_g (35 nC), same V_CES/V_CE(sat), TO-220 package	Supports higher power levels (≤1.2 kW) but requires stronger gate driver and larger heatsink	Select when scaling output power beyond 600 W while retaining identical footprint and drive architecture.
FGL60N100BNTD	1000 V rating, 60 A current, 120 nC Q_g, TO-247 package, no integrated diode	Targets ultra-high-voltage industrial drives; requires external diode and high-current gate driver	Choose only for 600–800 V DC bus systems needing >10 A continuous current and no diode integration.

Compared with STGP7NC60HD and FGL60N100BNTD, STGP3NB60HD delivers optimal balance of gate drive simplicity (21 nC), thermal efficiency (2.5 °C/W), and integrated diode functionality for sub-1 kW high-frequency converters-making it the preferred choice where board space, EMI, and driver cost are constrained.

Availability

STGP3NB60HD is available at Aetrix Electronics and suitable for high-frequency motor controls, active PFC boost converters, and industrial SMPS requiring stable component supply and long-term production continuity.

Supply support for STGP3NB60HD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The PowerMESH™ IGBT product line was developed specifically for high-efficiency, high-frequency power conversion in SMPS, PFC, and motor drive applications - emphasizing low switching loss, integrated diode performance, and rugged SOA.

FAQ

What is the maximum recommended gate resistor value for STGP3NB60HD in a 50 kHz PFC application?

The datasheet specifies R_G = 10 Ω for characterization. For 50 kHz operation, a 15–22 Ω non-inductive gate resistor balances switching loss and EMI, limiting dV/dt to <50 V/ns while keeping E_off below 88 µJ. Lower values increase EMI risk; higher values raise t_f and conduction loss proportionally.

Does STGP3NB60HD require a negative gate voltage for reliable turn-off?

No. STGP3NB60HD is fully enhanced at V_GE = 0 V and has negligible leakage (±100 nA) at ±20 V. A 0 V to 15 V gate drive suffices; applying –5 V adds no reliability benefit and risks overstressing the gate oxide if not properly clamped.

Can the integrated TurboSwitch™ diode replace an external ultrafast diode in a synchronous rectifier?

No. The integrated diode is antiparallel and unidirectional, designed for freewheeling-not synchronous rectification. Its 45 ns t_rr and 2.7 A I_RRM suit PFC and inverter commutation, but it lacks the bidirectional control and low forward drop required for synchronous rectifier duty.

Is STGP3NB60HD compliant with RoHS and REACH regulations?

Yes. STGP3NB60HD is RoHS-compliant (2011/65/EU) and REACH-conformant (EC 1907/2006), with lead-free matte tin plating on leads and halogen-free molding compound. Full compliance documentation is available via ST's official product page under document number CD00146771.

STGP3NB60HD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 10 A

Current - Collector Pulsed (Icm):: 24 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 3A

Power - Max:: 50 W

Switching Energy:: 33µJ (off)

Input Type:: Standard

Gate Charge:: 21 nC

Td (on/off) @ 25°C:: 5ns/53ns

Test Condition:: 480V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr):: 45 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STGP3NB60HD FAQ

1.How can I place an order for STGP3NB60HD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP3NB60HD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP3NB60HD reliable?

The price and inventory of STGP3NB60HD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP3NB60HD is usually 5 days.

3.What payment methods are accepted for STGP3NB60HD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP3NB60HD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP3NB60HD?

STGP3NB60HD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP3NB60HD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP3NB60HD?

For technical support, including STGP3NB60HD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP3NB60HD requirements.

6.How does Aetrix verify that STGP3NB60HD is sourced from the original manufacturer or authorized distributors?

All STGP3NB60HD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP3NB60HD meets industry standards.

7.What is the process for return or replacement of STGP3NB60HD?

All STGP3NB60HD units undergo pre-shipment inspection (PSI). If there is an issue with STGP3NB60HD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP3NB60HD part is unused and in its original packaging.

Return procedure for STGP3NB60HD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…