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STMicroelectronics STGP3NB60KD

Part No.:
STGP3NB60KD
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixSTGP3NB60KD.pdf
Description:
IGBT 600V 10A 50W TO220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,760

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Product details

Overview

STGP3NB60KD from STMicroelectronics is a 600 V, 3 A N-channel PowerMESH™ IGBT in TO-220 package, optimized for high-frequency motor control with short-circuit withstand capability. It delivers VCE(sat) = 1.9 V (typ) at 125°C, tscw = 10 µs, and Qg = 14 nC, enabling efficient switching in hard-switched and resonant SMPS and PFC stages.

For engineers reviewing the STGP3NB60KD datasheet, STGP3NB60KD pinout, STGP3NB60KD application, or STGP3NB60KD equivalent, key selection criteria include short-circuit ruggedness, low gate charge for 20–100 kHz operation, thermal resistance (Rthj-case = 1.8 °C/W), and integrated anti-parallel diode with trr = 45 ns at 125°C.

Technical Context

This IGBT employs ST's patented strip layout PowerMESH™ structure to achieve high input impedance, low conduction loss, and robust short-circuit immunity. Its "D" version integrates a fast, soft-recovery emitter-collector diode with 1.31 V forward voltage at 1.5 A and 2.7 A peak reverse recovery current.

The device is rated for 600 V VCES, operates up to 150°C junction temperature, and features gate threshold voltage of 5–7 V with ±20 V VGE rating. Switching performance is characterized at VCC = 480 V, IC = 3 A, RG = 10 Ω, showing Eon = 30 µJ and Eoff = 165 µJ at Tj = 125°C.

Key Specifications

Parameter Value and Actual Design Meaning
VCES600 V - Withstands DC bus voltages up to 600 V without breakdown under zero-gate condition.
VCE(sat)1.9 V (typ @ 125°C) - Enables low conduction loss in motor drive half-bridges and PFC boost stages.
IC (cont.)3 A @ TC = 100°C - Sustains continuous output current in thermally constrained industrial enclosures.
tscw10 µs @ VCE = 300 V, Tj = 125°C - Supports fault handling in servo drives without external desaturation protection.
Qg14 nC - Reduces gate driver power requirement and enables >50 kHz switching with standard 1–2 W drivers.
Rthj-case1.8 °C/W - Allows direct mounting to heatsinks for compact 68 W dissipation at 25°C case temperature.
trr45 ns @ Tj = 125°C - Minimizes diode recovery-related voltage spikes and EMI in bridge-leg commutation.

Pinout & Package

TO-220 package (3-pin, straight lead, insulated tab). Mounting hole centered on tab; pin 1 = Gate, pin 2 = Collector, pin 3 = Emitter. Tab is electrically connected to Collector.

Pin/Terminal Circuit Role Design Meaning
Pin 1GateHigh-impedance voltage-controlled terminal requiring ≤±20 V drive; 14 nC total charge for full turn-on.
Pin 2CollectorMain high-voltage power terminal; electrically tied to metal tab for direct heatsink coupling and thermal path.
Pin 3EmitterPower return node; serves as reference for gate drive and current sensing; shares common path with anti-parallel diode cathode.

Key Features

Feature Design Value
Short-circuit ratedWithstands 10 µs at 300 V and 125°C junction temperature-enables simplified protection in motor inverters.
Integrated fast diodeSoft-recovery emitter-collector diode with 45 ns trr and 2.7 A IRRM-reduces snubber size and improves ZVS behavior in resonant topologies.
Low VCE(sat)1.9 V typical at 3 A and 125°C-cuts conduction loss by ~30% vs. legacy 600 V IGBTs, improving thermal margin in sealed enclosures.
PowerMESH™ cell layoutPatented strip geometry delivering uniform current distribution and reduced tail current-lowers Eoff and improves SOA at high dv/dt.
High dV/dt immunityRated for 50 V/ns (min)-ensures noise-free operation in noisy industrial environments with long motor cables.

Applications

Industrial Motor Drives AC-DC PFC Boost Stages

Use Scenario: 3-phase inverter stage in HVAC compressors and pump controllers operating at 16–20 kHz.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 600 V DC bus topology; handles 3 A RMS phase current with short-circuit fault tolerance.

Use Value: 10 µs short-circuit withstand time eliminates need for fast desat detection circuitry, reducing BOM count and PCB area.

Use Scenario: Active boost switch in universal-input (90–264 VAC) PFC front-end for server PSUs and industrial power supplies.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; switches at 65–100 kHz with 480 V DC link.

Use Value: Low Qg (14 nC) and soft-recovery diode reduce gate driver losses and EMI filter size while maintaining >96% efficiency.

Resonant LLC Converters Appliance Inverter Modules

Use Scenario: Primary-side switch in high-efficiency LLC resonant DC-DC converters for telecom rectifiers and EV chargers.

IC Role / Device Role / Timing Role: Hard-commutated switch operating near zero-voltage switching (ZVS) transition; requires low tail current and fast diode recovery.

Use Value: 45 ns trr and minimized tail current reduce circulating losses and improve ZVS window stability across load range.

Use Scenario: Half-bridge switch in compact inverter modules for washing machine drum motors and refrigerator compressors.

IC Role / Device Role / Timing Role: TO-220-packaged IGBT providing cost-effective 600 V switching with integrated diode-eliminates discrete diode placement and routing.

Use Value: Single-package integration reduces assembly steps and improves thermal coupling between switch and diode, lowering peak junction temperature by ~8°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGP4NC60HDHigher IC = 4 A, lower VCE(sat) = 1.6 V, same 600 V rating and TO-220 package.Better suited for 4–5 A motor drive designs where thermal headroom is limited.Select when system current exceeds 3.5 A RMS and board space prohibits paralleling.
FGL40N60UFD600 V, 40 A ultrafast IGBT with UFS diode; Rthj-case = 0.45 °C/W but requires TO-247 package.Targeted at higher-power (>1 kW) SMPS where lower Rth and higher IC justify larger footprint.Choose only if thermal budget demands <0.5 °C/W and gate drive can support 120 nC Qg.

Compared with STGP4NC60HD and FGL40N60UFD, STGP3NB60KD offers optimal balance of ruggedness, gate drive simplicity, and TO-220 compatibility for sub-1 kW motor and PFC applications-avoiding overdesign while ensuring short-circuit survival and EMI control.

Availability

STGP3NB60KD is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC PFC boost stages, and resonant LLC converters requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for STGP3NB60KD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT family-engineered specifically for high-frequency, short-circuit-tolerant switching in motor control, SMPS, and PFC applications where reliability and thermal efficiency are critical.

FAQ

Is STGP3NB60KD RoHS compliant and halogen-free?

Yes. STGP3NB60KD meets RoHS Directive 2011/65/EU and is manufactured as a halogen-free device per STMicroelectronics' specification. The TO-220 package uses lead-free matte tin plating on leads and complies with JEDEC J-STD-020 moisture sensitivity level 1.

What is the maximum recommended gate resistor value for reliable switching?

For safe operation at 125°C junction temperature with 15 V gate drive, ST recommends RG ≤ 22 Ω to ensure tscw compliance and limit dv/dt-induced false turn-on. At 25°C, RG = 10 Ω yields measured td(on) = 14 ns and Eon = 30 µJ per datasheet conditions.

Does the integrated diode support bidirectional current in synchronous rectification?

No. The emitter-collector diode is unidirectional and optimized for freewheeling-not synchronous rectification. Its 1.31 V forward drop and 45 ns trr are specified for inductive flyback only; it lacks the low Vf and controlled Qrr required for active rectification control.

Can STGP3NB60KD replace STGP3NC60H in existing designs?

No. STGP3NC60H is a 600 V, 3 A "H-series" IGBT with different VGE(th) (4–6 V), higher VCE(sat) (2.2 V), and no short-circuit rating. Substitution would compromise fault tolerance and increase conduction loss-STGP3NB60KD requires updated gate drive timing and protection logic.

STGP3NB60KD Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
PowerMESH™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
10 A
Current - Collector Pulsed (Icm):
24 A
Vce(on) (Max) @ Vge, Ic:
2.8V @ 15V, 3A
Power - Max:
50 W
Switching Energy:
30µJ (on), 58µJ (off)
Input Type:
Standard
Gate Charge:
14 nC
Td (on/off) @ 25°C:
14ns/33ns
Test Condition:
480V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr):
45 ns
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STGP3NB60KD FAQ

1.How can I place an order for STGP3NB60KD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP3NB60KD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP3NB60KD reliable?

The price and inventory of STGP3NB60KD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP3NB60KD is usually 5 days.

3.What payment methods are accepted for STGP3NB60KD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP3NB60KD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP3NB60KD?

STGP3NB60KD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP3NB60KD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP3NB60KD?

For technical support, including STGP3NB60KD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP3NB60KD requirements.

6.How does Aetrix verify that STGP3NB60KD is sourced from the original manufacturer or authorized distributors?

All STGP3NB60KD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP3NB60KD meets industry standards.

7.What is the process for return or replacement of STGP3NB60KD?

All STGP3NB60KD units undergo pre-shipment inspection (PSI). If there is an issue with STGP3NB60KD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP3NB60KD part is unused and in its original packaging.

Return procedure for STGP3NB60KD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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