STMicroelectronics STGP5H60DF

Overview

STGP5H60DF from STMicroelectronics is a 600 V, 5 A trench gate field-stop IGBT with integrated ultrafast soft-recovery antiparallel diode in TO-220 package. It delivers 1.95 V V_CE(sat) at 5 A/25 °C, 140 ns t_d(off), and 5 μs short-circuit withstand time-enabling high-efficiency motor control inverters and PFC stages operating up to 20 kHz.

For engineers reviewing the STGP5H60DF datasheet, STGP5H60DF pinout, STGP5H60DF application, or STGP5H60DF equivalent, this device supports stable paralleling due to its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution, while its low R_thJC (1.7 °C/W) and 88 W P_TOT support thermally constrained industrial drive designs.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction and switching losses-optimized for high-frequency converters where efficiency and thermal management are critical. Its integrated diode features 134.5 ns t_rr and 48 nC Q_rr at 25 °C, enabling low-loss commutation in bridge topologies.

The device exhibits a safe, slightly positive V_CE(sat) temperature coefficient (1.6 V @ 125 °C, 1.7 V @ 175 °C), ensuring current sharing stability during parallel operation. Its 5 μs short-circuit rating at V_GE = 15 V and R_G = 47 Ω supports robust protection in motor drive fault conditions.

Key Specifications

Pinout & Package

STGP5H60DF uses a standard TO-220 package with isolated tab (pin 2), where pin 1 is Gate, pin 2 is Collector (tab), and pin 3 is Emitter. The insulated tab enables direct mounting to heatsink without electrical isolation hardware.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGF5H60DF and STGD5H60DF, STGP5H60DF offers superior thermal performance (1.7 °C/W vs. 6.2/1.8 °C/W) and mechanical robustness via isolated TO-220 tab, making it optimal for high-reliability, field-serviceable motor drives requiring >10-year operational life.

Availability

STGP5H60DF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and active PFC front-ends requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STGP5H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STGP5H60DF belongs to ST's H-series IGBT portfolio-engineered specifically for high-efficiency, high-frequency power conversion in motor control, UPS, and PFC applications where conduction-switching trade-offs must be tightly optimized.

FAQ

What is the maximum gate-emitter voltage rating for STGP5H60DF?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V increases gate oxide stress and leakage; negative bias below –10 V risks gate damage. Gate drive circuits must include clamping (e.g., Zener diodes) to stay within these limits under transient conditions.

Can STGP5H60DF be safely paralleled with identical units?

Yes-its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% V_CE(sat)) enable stable current sharing without external emitter resistors. Layout symmetry (matched gate and emitter loop inductances) remains critical; ST recommends <5 nH difference between parallel paths to avoid dynamic imbalance.

What is the thermal resistance from junction to ambient (R_thJA) for STGP5H60DF in TO-220 package?

R_thJA is 62.5 °C/W under standard JEDEC test conditions (single-layer FR-4, 1 in² copper pad). Actual R_thJA depends heavily on heatsink interface: with a 10 °C/W heatsink and thermal grease (0.5 °C/W interface), total R_thJA drops to ~12.2 °C/W, enabling 88 W dissipation at ΔT = 1075 °C (not practical)-realistic design limit is 70–75 °C junction rise.

Does STGP5H60DF include an integrated diode, and what are its key recovery characteristics?

Yes-it integrates an ultrafast soft-recovery antiparallel diode with t_rr = 134.5 ns, Q_rr = 48 nC, and I_rrm = 1.38 A at 25 °C (V_CC = 400 V, dI_F/dt = 100 A/μs). At 175 °C, t_rr increases to 157 ns and Q_rr to 165 nC-designers must verify snubber sizing and dead-time margins across full temperature range.