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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGP6M65DF2

Name: STGP6M65DF2
Brand: STMicroelectronics
SKU: STGP6M65DF2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGP6M65DF2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: STGP6M65DF2.pdf

Description:: IGBT TRENCH FS 650V 12A TO220

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Product details

Overview

STGP6M65DF2 from STMicroelectronics is a trench gate field-stop IGBT with integrated soft fast recovery antiparallel diode, rated for 650 V V_CES, 6 A continuous collector current at T_C = 100 °C, and 6 µs short-circuit withstand time at T_Jstart = 150 °C. It delivers V_CE(sat) = 1.55 V (typ.) at I_C = 6 A and T_J = 25 °C, enabling high-efficiency motor control inverters and UPS power stages.

For engineers reviewing the STGP6M65DF2 datasheet, STGP6M65DF2 pinout, STGP6M65DF2 application, or STGP6M65DF2 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, low R_thJC = 1.7 °C/W (IGBT), and tight parameter distribution supporting robust PFC and industrial drive designs.

Technical Context

This IGBT employs ST's M-series trench gate field-stop structure optimized for balanced conduction loss and switching performance in 400–600 V inverter systems. Its integrated diode features soft reverse recovery (t_rr = 140 ns typ., Q_rr = 210 nC typ. at T_J = 25 °C) and low forward voltage (V_F = 2.2 V typ. at I_F = 6 A).

The device supports stable operation up to T_J = 175 °C, with V_CE(sat) increasing predictably to 2.1 V at T_J = 175 °C - critical for thermal design in compact motor drives. Short-circuit capability is validated at V_GE = 15 V and V_CC ≤ 400 V, delivering 6 µs withstand time under defined test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - maximum blocking voltage for 400 V DC-link applications with 1.6× safety margin
I_C (T_C = 100 °C)	6 A - continuous output current rating at realistic heatsink temperature
V_CE(sat) (I_C = 6 A, T_J = 25 °C)	1.55 V typ. - low conduction loss enabling <1.5 W IGBT dissipation at full load
t_sc	6 µs @ V_GE = 15 V, T_Jstart = 150 °C - enables reliable overcurrent protection without desaturation circuit complexity
R_thJC (IGBT)	1.7 °C/W - supports efficient thermal coupling to heatsink in TO-220 package
E_off	0.200 mJ typ. @ V_CC = 520 V, I_C = 6 A - defines turn-off energy loss in hard-switched PFC and inverter legs
Q_g	21.2 nC - determines gate driver current requirement (e.g., ≥1 A peak for 22 Ω RG)

Pinout & Package

STGP6M65DF2 is housed in a TO-220 type A package with insulated tab, featuring three terminals: Collector (C), Gate (G), and Emitter (E). The case is electrically connected to the collector, requiring proper isolation when mounted to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC-link positive; carries full load current and must be thermally coupled to heatsink
Gate (G)	Control input	Receives ±20 V-rated drive signal; requires low-inductance layout due to 21.2 nC total gate charge
Emitter (E)	Power return and reference node	Serves as common reference for gate drive and current sensing; low-inductance connection critical for switching stability

Key Features

Feature	Design Value
Positive V_CE(sat) temperature coefficient	Enables inherent current sharing in paralleled configurations without external balancing resistors
Tight parameter distribution	Reduces system-level derating needs and improves batch-to-batch consistency in production inverters
Soft fast recovery antiparallel diode	Minimizes voltage overshoot and EMI during freewheeling, with t_rr = 140 ns and low dI_rr/dt
6 µs short-circuit withstand time	Allows use of simpler, lower-cost protection circuits in motor drives and UPS systems
Low R_thJC (1.7 °C/W)	Permits higher power density in space-constrained industrial enclosures without forced air cooling

Applications

Motor Control Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: 3-phase inverter stage driving 0.75–2.2 kW induction or PMSM motors in HVAC and industrial pumps.

IC Role / Device Role / Timing Role: Main switching device in each half-bridge leg, operating at 8–16 kHz with synchronous PWM modulation.

Use Value: Low V_CE(sat) and soft diode reduce conduction + switching losses by ~12% vs. standard F-series IGBTs at 10 kHz, improving thermal margin.

Use Scenario: Online double-conversion UPS output stage delivering clean 230 VAC/50 Hz with <3% THD under nonlinear loads.

IC Role / Device Role / Timing Role: Inverter switch in full-bridge topology, handling bidirectional energy flow during battery backup mode.

Use Value: 6 µs short-circuit tolerance allows direct integration with microcontroller-based fault response, eliminating need for external desat detection ICs.

Active PFC Boost Converters

Industrial Welding Power Supplies

Use Scenario: Single-phase 3.3 kW boost PFC front-end in server PSUs and medical equipment.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter, switching at 65–100 kHz.

Use Value: Tight V_GE(th) distribution (5–7 V) ensures consistent zero-crossing detection and reduces input current distortion across temperature.

Use Scenario: Inverter-based arc welding power source requiring rapid current slew rates (>500 A/ms) and overload tolerance.

IC Role / Device Role / Timing Role: Primary switching element in resonant inverter stage, subjected to repetitive 200–500 A pulsed currents.

Use Value: Low R_thJC (1.7 °C/W) and high I_CP (24 A) support 300% peak current capability for >10 s without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FGA60N65SMD	Higher V_CE(sat) = 1.8 V (typ.), lower I_C = 4 A @ T_C = 100 °C, no integrated diode	Requires external ultrafast diode; less suitable for space-constrained PFC where diode integration matters	Select if cost sensitivity outweighs thermal performance and board area constraints
IRGP4062DPBF	Higher E_off = 0.31 mJ, longer t_sc = 10 µs but higher V_CE(sat) = 1.9 V (typ.) at same I_C	Better short-circuit margin but higher conduction loss; suited for lower-frequency (<8 kHz) welder designs	Select when extended short-circuit immunity is prioritized over efficiency at 10–16 kHz

Compared with FGA60N65SMD and IRGP4062DPBF, STGP6M65DF2 offers the lowest combined conduction–switching loss at 10–16 kHz, integrated diode simplifies layout, and tighter V_CE(sat) distribution reduces system-level current imbalance risk in multi-leg inverters.

Availability

STGP6M65DF2 is available at Aetrix Electronics and suitable for motor control inverters, uninterruptible power supplies (UPS), and active PFC boost converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for STGP6M65DF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The M-series IGBTs, including STGP6M65DF2, were engineered specifically for medium-power inverter applications demanding optimal trade-offs between conduction loss, switching speed, and ruggedness - especially in motor drives and UPS systems.

FAQ

What is the maximum gate-emitter voltage rating for STGP6M65DF2?

The absolute maximum gate-emitter voltage is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller capacitance coupling during high dv/dt events.

Does STGP6M65DF2 require an external freewheeling diode?

No - STGP6M65DF2 integrates a soft, fast-recovery antiparallel diode with t_rr = 140 ns (typ.) and Q_rr = 210 nC (typ.) at 25 °C. This eliminates the need for discrete diodes in standard inverter half-bridge configurations, reducing PCB area and parasitic inductance.

How does short-circuit withstand time vary with gate drive voltage?

At V_GE = 15 V and T_Jstart = 150 °C, t_sc = 6 µs; at V_GE = 13 V under identical conditions, it increases to 10 µs. Lower gate voltage reduces peak short-circuit current but extends safe fault window - a key trade-off for protection circuit design.

What is the thermal resistance from junction to case for the IGBT portion?

R_thJC for the IGBT section is 1.7 °C/W, measured from junction to the TO-220 metal tab. This value assumes proper mounting with thermal interface material and flat, clean heatsink surface - actual system R_thJA depends on heatsink size and airflow.

STGP6M65DF2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: M

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 12 A

Current - Collector Pulsed (Icm):: 24 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 6A

Power - Max:: 88 W

Switching Energy:: 40µJ (on), 136µJ (off)

Input Type:: Standard

Gate Charge:: 21.2 nC

Td (on/off) @ 25°C:: 12ns/86ns

Test Condition:: 400V, 6A, 22Ohm, 15V

Reverse Recovery Time (trr):: 140 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STGP6M65DF2 FAQ

1.How can I place an order for STGP6M65DF2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP6M65DF2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP6M65DF2 reliable?

The price and inventory of STGP6M65DF2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP6M65DF2 is usually 5 days.

3.What payment methods are accepted for STGP6M65DF2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP6M65DF2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP6M65DF2?

STGP6M65DF2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP6M65DF2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP6M65DF2?

For technical support, including STGP6M65DF2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP6M65DF2 requirements.

6.How does Aetrix verify that STGP6M65DF2 is sourced from the original manufacturer or authorized distributors?

All STGP6M65DF2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP6M65DF2 meets industry standards.

7.What is the process for return or replacement of STGP6M65DF2?

All STGP6M65DF2 units undergo pre-shipment inspection (PSI). If there is an issue with STGP6M65DF2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP6M65DF2 part is unused and in its original packaging.

Return procedure for STGP6M65DF2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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