STMicroelectronics STGP6NC60H

Overview

STGP6NC60H from STMicroelectronics is a 600 V, 7 A N-channel high-frequency IGBT in TO-220 package with integrated ultra-fast soft-recovery antiparallel diode, low 2.5 V V_CE(sat) at 3 A/25 °C, 100 ns typical current fall time, and 5.5 pF C_res/C_ies ratio optimized for hard-switched and resonant SMPS, PFC, and motor drive inverters.

For engineers reviewing the STGP6NC60H datasheet, STGP6NC60H pinout, STGP6NC60H application, or STGP6NC60H equivalent, this device supports high-efficiency, high-frequency switching topologies where low conduction loss, fast turn-off, and minimized cross-conduction risk are critical design requirements.

Technical Context

This PowerMESH IGBT uses ST's patented strip layout to achieve reduced t_fall (100 ns typ.) while maintaining low V_CE(sat) (2.5 V @ 3 A, 25 °C) and a very soft reverse recovery diode (t_rr = 21 ns @ 3 A, 40 V, 100 A/µs). Its C_res/C_ies ratio of ~2.7% minimizes Miller-induced gate oscillation and cross-conduction susceptibility in bridge configurations.

The device operates up to 150 °C junction temperature, features ±20 V gate rating, and delivers 68 µJ typical E_off at 390 V/3 A with 10 Ω gate resistance - enabling efficient operation in 50–200 kHz PFC and inverter stages without requiring complex snubbing or active clamping.

Key Specifications

Pinout & Package

STGP6NC60H is housed in a TO-220 (Type A) package with isolated tab (pin 2), featuring industry-standard mechanical dimensions: D = 15.25–15.75 mm, E = 10.00–10.40 mm, L = 13.00–14.00 mm, and 3.75–3.85 mm mounting hole diameter. The tab is electrically connected to the collector (C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Compared with STGF6NC60HD and STGB6NC60HDT4, STGP6NC60H provides the highest thermal performance (2.0 °C/W R_thJC) and mandatory isolation (2.5 kV RMS) in a through-hole TO-220 format - making it optimal for safety-critical, chassis-grounded, medium-power industrial inverters where reliability and serviceability outweigh SMT or low-profile needs.

Availability

STGP6NC60H is available at Aetrix Electronics and suitable for high-frequency inverters, active PFC modules, and motor drive power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for STGP6NC60H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The PowerMESH IGBT family - including the "H" series - was engineered specifically for high-frequency switching applications demanding low switching loss, soft recovery, and robust ruggedness in SMPS, PFC, and motor control topologies.

FAQ

What is the maximum gate-emitter voltage rating for STGP6NC60H?

The absolute maximum V_GE is ±20 V, with ±15 V recommended for normal operation. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent transients during fast switching or layout-induced ringing.

Does STGP6NC60H include an integrated diode, and what are its key recovery parameters?

Yes - it integrates a very soft ultrafast antiparallel diode with 21 ns reverse recovery time (t_rr), 14 nC reverse recovery charge (Q_rr), and 1.36 A peak reverse recovery current (I_rrm) at 25 °C. These values increase moderately at 125 °C (t_rr = 34 ns, Q_rr = 32 nC), confirming stable freewheeling behavior across operating temperature.

Can STGP6NC60H be used in parallel configurations, and what layout considerations apply?

Parallel operation is feasible but requires matched gate drive impedance, symmetrical PCB routing, and individual gate resistors (≥10 Ω) to ensure current sharing. The low C_res/C_ies ratio helps mitigate dynamic imbalance, but thermal coupling via shared heatsink and emitter ballasting resistors (0.1–0.22 Ω) are strongly advised for >5 A per device.

What is the thermal resistance from junction to case (R_thJC) and how does it impact heatsink selection?

R_thJC is 2.0 °C/W for the TO-220 package. With 62.5 W maximum power dissipation at T_C = 25 °C, this implies a 125 °C junction-to-case temperature rise at full power - meaning the heatsink must maintain case temperature ≤50 °C to hold T_J ≤175 °C. A heatsink with ≤10 °C/W R_thSA is recommended for continuous 7 A operation at 100 kHz.