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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGP7NB60HD

Name: STGP7NB60HD
Brand: STMicroelectronics
SKU: STGP7NB60HD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGP7NB60HD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: STGP7NB60HD.pdf

Description:: IGBT 600V 14A 80W TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGP7NB60HD from STMicroelectronics is a 600 V, 7 A N-channel PowerMESH™ IGBT co-packaged with an integrated TurboSwitch™ antiparallel diode in TO-220 package, optimized for high-frequency switching (<120 kHz) in hard-switched and resonant SMPS and PFC stages. It delivers V_CE(sat) ≤ 2.8 V at 7 A, low gate charge (Q_G = 42–55 nC), and fast turn-off (t_d(off) = 75 ns typ, t_f = 70 ns typ) at T_j = 25 °C.

For engineers reviewing the STGP7NB60HD datasheet, STGP7NB60HD pinout, STGP7NB60HD application, or STGP7NB60HD equivalent, key selection criteria include its 600 V blocking capability, 150 °C max junction temperature, co-packaged diode recovery performance (t_rr = 100 ns, Q_rr = 180 nC at T_j = 125 °C), thermal resistance (R_thj-case = 1.56 °C/W), and suitability for high-efficiency, high-density power conversion designs.

Technical Context

This IGBT employs ST's patented PowerMESH™ strip layout to achieve low conduction loss and high current density while maintaining robust short-circuit ruggedness. Its gate threshold voltage (V_GE(th) = 3–5 V) and transconductance (g_fs = 3.5–5 S) support stable drive with standard 15 V gate drivers.

The device integrates a fast-recovery antiparallel diode with V_F = 1.6 V (T_j = 25 °C) and soft reverse recovery (I_RRM = 3.6 A), enabling reduced EMI and lower turn-on losses in bridge-leg configurations. Switching energy is characterized at V_CC = 480 V, I_C = 7 A, R_G = 10 Ω, and includes tail-current contribution per JEDEC standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Enables use in 400 V DC bus systems with ≥50% voltage margin for surge and ringing.
I_C (cont., T_c = 100 °C)	7 A - Sustains full rated current at heatsink temperatures up to 100 °C without derating.
V_CE(sat)	≤2.8 V @ I_C = 7 A, V_GE = 15 V - Limits conduction loss to <20 W at rated current, easing thermal design.
Q_G	42–55 nC - Enables efficient 100+ kHz switching with moderate gate driver peak current (≈5–7 A).
t_d(off)/t_f	75/70 ns typ - Supports clean zero-voltage switching transitions in resonant topologies.
R_thj-case	1.56 °C/W - Allows ~51 W dissipation at ΔT = 80 °C (T_j = 150 °C, T_c = 70 °C) with standard TO-220 mounting.
t_rr/Q_rr	100 ns / 180 nC @ T_j = 125 °C - Minimizes commutation loss and dv/dt-induced false triggering in half-bridge operation.

Pinout & Package

TO-220 package: insulated case, vertical mounting, 3-pin through-hole configuration with tab connected to collector. Thermal path optimized via metal tab soldered or clamped to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main high-side current path input	Connected to DC bus or transformer primary; carries full load current and withstands 600 V transients.
2 (Gate)	Control terminal for MOS-controlled IGBT channel	High-impedance voltage-driven input requiring low-charge drive; sensitive to noise-requires tight gate loop layout.
3 (Emitter)	Current return path and reference node	Serves as common source for gate drive and sense point for current feedback; must be low-inductance connection.

Key Features

Feature	Design Value
PowerMESH™ cell structure	Reduces V_CE(sat) and switching losses simultaneously versus planar IGBTs, enabling higher efficiency at 50–120 kHz.
Co-packaged TurboSwitch™ diode	Provides matched thermal and dynamic characteristics with the IGBT, eliminating external diode selection and layout mismatch.
Low gate charge (Q_G)	Enables use of cost-effective gate drivers (e.g., IR2110, UCC3732x) without external boost or level-shifting complexity.
150 °C maximum junction temperature	Supports compact heatsink designs and operation in enclosed industrial enclosures with ambient up to 85 °C.

Applications

High-Frequency Motor Drive Inverter

Active PFC Stage

Use Scenario: 3-phase inverter stage in HVAC compressor drives operating at 16–20 kHz carrier frequency.

IC Role / Device Role / Timing Role: High-side switch in 6-pack topology; handles 7 A RMS motor phase current with fast commutation.

Use Value: Low V_CE(sat) and soft diode recovery reduce conduction + switching loss by ~12% vs. legacy 600 V IGBTs, improving system efficiency to >97.5%.

Use Scenario: Boost switch in continuous-conduction-mode (CCM) active PFC for 1 kW server PSU.

IC Role / Device Role / Timing Role: Main switching element in single-phase boost converter; switches at 65–100 kHz with 400 V DC output.

Use Value: Integrated diode eliminates need for discrete ultrafast diode, reducing BOM count and PCB area by 25% while maintaining <150 mW diode conduction loss.

Resonant LLC Half-Bridge

Induction Heating Inverter

Use Scenario: Upper switch in asymmetric half-bridge LLC resonant converter for LED driver applications.

IC Role / Device Role / Timing Role: Hard-commutated switch operating near zero-current switching (ZCS) boundary at 120 kHz.

Use Value: Fast turn-off (E_off = 85 µJ) and low tail current minimize dead-time loss and improve light-load regulation stability.

Use Scenario: Full-bridge inverter in 20–50 kHz induction cooktop with variable load coupling.

IC Role / Device Role / Timing Role: Primary-side switching device handling pulsed 56 A peak currents during burst-mode operation.

Use Value: 56 A pulsed rating and 150 °C T_j allow reliable 3 kW peak power delivery without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP7NC60HD	Same 600 V/7 A rating but uses older "C"-series process; V_CE(sat) = 2.9 V (typ), Q_G = 60 nC, R_thj-case = 1.62 °C/W.	Higher conduction and switching loss; less suitable above 80 kHz.	Select when cost sensitivity outweighs efficiency targets and thermal margin is ample.
FGA25N120ANTD	1200 V/25 A IGBT with integrated diode; V_CE(sat) = 2.7 V, Q_G = 125 nC, R_thj-case = 0.45 °C/W (TO-3P).	Over-specified voltage rating; higher gate drive demand; larger footprint.	Select only if system requires 1200 V isolation or >15 A current capability; not drop-in compatible.

Compared with STGP7NC60HD and FGA25N120ANTD, STGP7NB60HD offers the best balance of low gate charge, tight V_CE(sat) tolerance, and proven 120 kHz operation-making it optimal for space-constrained, high-efficiency 600 V converters where thermal headroom is limited.

Availability

STGP7NB60HD is available at Aetrix Electronics and suitable for high-frequency motor controls, active PFC stages, and resonant LLC inverters requiring stable component supply and long-term industrial availability.

Supply support for STGP7NB60HD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The PowerMESH™ IGBT product line was engineered specifically for high-frequency, high-efficiency power conversion-targeting SMPS, PFC, motor drives, and induction heating where low switching loss and integrated diode performance are critical.

FAQ

Is STGP7NB60HD pin-compatible with STGP7NC60HD?

Yes-both devices share identical TO-220 pinout (C-G-E), same mechanical footprint, and compatible gate drive requirements. However, STGP7NB60HD exhibits lower V_CE(sat) and gate charge, so existing gate resistor values may require minor optimization to maintain optimal switching speed and EMI profile.

Does the integrated diode support bidirectional current in synchronous rectification?

No-the co-packaged TurboSwitch™ diode is unidirectional and optimized for freewheeling, not synchronous rectification. It conducts only from emitter to collector and lacks the control logic or low V_F needed for active rectification; external MOSFETs remain required for SR implementation.

What is the maximum recommended gate resistor value for 100 kHz operation?

For 100 kHz hard-switching with minimal overshoot, R_G = 10 Ω is validated in the datasheet. Increasing beyond 15 Ω significantly extends t_f and E_off; decreasing below 5 Ω risks gate oscillation and excessive dV/dt stress. Layout inductance must stay <10 nH to avoid ringing.

Can STGP7NB60HD operate reliably at T_j = 150 °C continuously?

Yes-the absolute maximum junction temperature is rated at 150 °C, and all electrical parameters (including V_CE(sat), switching times, and diode recovery) are specified up to this temperature. Continuous operation requires maintaining case temperature ≤70 °C (ΔT = 80 °C) using R_thj-case = 1.56 °C/W and adequate heatsinking.

STGP7NB60HD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 14 A

Current - Collector Pulsed (Icm):: 56 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 7A

Power - Max:: 80 W

Switching Energy:: 85µJ (off)

Input Type:: Standard

Gate Charge:: 42 nC

Td (on/off) @ 25°C:: 15ns/75ns

Test Condition:: 480V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr):: 100 ns

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STGP7NB60HD FAQ

1.How can I place an order for STGP7NB60HD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP7NB60HD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP7NB60HD reliable?

The price and inventory of STGP7NB60HD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP7NB60HD is usually 5 days.

3.What payment methods are accepted for STGP7NB60HD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP7NB60HD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP7NB60HD?

STGP7NB60HD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP7NB60HD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP7NB60HD?

For technical support, including STGP7NB60HD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP7NB60HD requirements.

6.How does Aetrix verify that STGP7NB60HD is sourced from the original manufacturer or authorized distributors?

All STGP7NB60HD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP7NB60HD meets industry standards.

7.What is the process for return or replacement of STGP7NB60HD?

All STGP7NB60HD units undergo pre-shipment inspection (PSI). If there is an issue with STGP7NB60HD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP7NB60HD part is unused and in its original packaging.

Return procedure for STGP7NB60HD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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