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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGP7NB60KD

Name: STGP7NB60KD
Brand: STMicroelectronics
SKU: STGP7NB60KD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGP7NB60KD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: STGP7NB60KD.pdf

Description:: IGBT 600V 14A 80W TO220

Quantity:: RFQ Add To RFQ list

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Inventory:4,284

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Product details

Overview

STGP7NB60KD from STMicroelectronics is a short-circuit-rated N-channel 600 V, 7 A PowerMESH™ IGBT co-packaged with a TurboSwitch™ antiparallel diode in TO-220 package. It delivers low V_CE(sat) (2.3–2.8 V), high-frequency switching (t_scw = 10 µs @ 125°C), and low gate charge (Q_g = 32.7 nC), enabling efficient hard-switched and resonant SMPS and motor control inverters.

For engineers reviewing the STGP7NB60KD datasheet, STGP7NB60KD pinout, STGP7NB60KD application, or STGP7NB60KD equivalent, key selection criteria include its 600 V blocking rating, 7 A continuous current at T_C = 100°C, short-circuit withstand time, co-packaged diode recovery characteristics (t_rr = 50 ns, Q_rr = 70 nC), and thermal resistance (R_thj-case = 1.56 °C/W).

Technical Context

This IGBT employs ST's patented high-voltage strip layout for optimized conduction and switching trade-offs. Its gate threshold voltage (V_GE(th) = 5–7 V) ensures robust noise immunity, while the integrated antiparallel diode features soft reverse recovery (I_RRM = 2.7 A, t_rr = 50 ns @ 125°C) to minimize voltage overshoot during commutation.

The device operates up to 150°C junction temperature with rated short-circuit capability (10 µs at V_CE = 300 V, T_j = 125°C, R_G = 10 Ω). Its dynamic parameters-E_on = 95 µJ, E_off = 300 µJ (T_j = 125°C)-are specified under standardized JEDEC inductive load conditions (V_CC = 480 V, I_C = 7 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(sat)	2.3–2.8 V @ I_C = 7 A, V_GE = 15 V - enables low conduction loss in 600 V motor drives and PFC stages
V_CES	600 V - supports universal input AC-DC and 400 V DC bus industrial inverters
I_C (cont.)	7 A @ T_C = 100°C - defines usable current in thermally constrained TO-220 heatsink designs
t_scw	10 µs @ V_CE = 300 V, T_j = 125°C - provides fault tolerance for overcurrent protection in motor controllers
Q_g	32.7 nC @ V_GE = 15 V - determines gate driver power requirement and switching speed control
R_thj-case	1.56 °C/W - sets maximum power dissipation (80 W @ ΔT = 125°C) for thermal design
t_rr (diode)	50 ns @ I_F = 7 A, T_j = 125°C - reduces turn-on losses and EMI in bridge-leg commutation

Pinout & Package

TO-220 package: isolated tab (collector), 3-pin through-hole mounting with standard footprint. Pin 1 = Gate, Pin 2 = Collector (tab), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance voltage-controlled terminal requiring <33 nC drive for full enhancement
Pin 2	Collector (Tab)	Electrically connected to metal tab - must be electrically isolated from heatsink unless system ground referenced
Pin 3	Emitter	Common source node for gate drive return and current sensing; referenced to low-side switch node

Key Features

Feature	Design Value
Short-circuit rated	10 µs withstand at 125°C junction - enables robust overcurrent protection without external desaturation detection
Co-packaged TurboSwitch™ diode	Soft-recovery (t_rr = 50 ns) with low Q_rr (70 nC) - minimizes voltage spikes and cross-conduction risk in half-bridge operation
Low V_CE(sat)	2.3 V typ. @ 7 A - reduces conduction loss by ~15% vs. comparable 600 V IGBTs, improving efficiency in 1–3 kW PFC
High dV/dt immunity	50 V/ns rated - suppresses false turn-on in high-noise inverter environments without snubbers

Applications

Industrial Motor Drives

Server/Telecom SMPS

Use Scenario: 3-phase inverter stage for 0.75–2.2 kW HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 6–20 kHz PWM inverter leg with integrated freewheeling path.

Use Value: Short-circuit rating allows direct integration into compact drives without auxiliary protection circuitry; low V_CE(sat) maintains >96% efficiency at full load.

Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1–3 kW telecom rectifiers.

IC Role / Device Role / Timing Role: Main switching device handling 400 V DC bus, operating at 100–300 kHz with zero-voltage switching assist.

Use Value: Low Q_g and fast turn-off (t_f = 150 ns) enable precise timing control; co-packaged diode eliminates discrete diode placement and parasitic inductance.

Induction Cooking

UPS Inverters

Use Scenario: Resonant half-bridge in 20–50 kHz induction cooktop power stages.

IC Role / Device Role / Timing Role: High-frequency switching transistor driving series-resonant tank with peak currents >30 A.

Use Value: Soft-recovery diode prevents destructive voltage ringing during ZVS transitions; 150°C max T_j supports sealed enclosure thermal management.

Use Scenario: Line-interactive UPS inverter output stage delivering 1–5 kVA pure sine wave.

IC Role / Device Role / Timing Role: Bidirectional switching element in H-bridge topology, conducting both forward and reverse current via integrated diode.

Use Value: Rated 7 A continuous at 100°C case temperature ensures stable operation under sustained overload; low E_off (300 µJ) reduces thermal stress during battery backup mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH60KDPBF	600 V, 7 A, V_CE(sat) = 2.7 V, t_scw = 10 µs, no co-packaged diode	Requires external ultrafast diode; higher gate charge (Q_g = 42 nC)	Preferred when discrete diode optimization is needed or existing layout uses separate diode footprints
FGA25N120ANTD	1200 V, 25 A, V_CE(sat) = 2.5 V, t_scw = 6 µs, co-packaged diode	Higher voltage rating increases cost and conduction loss at 400 V bus; larger D²PAK package	Selected only when system requires 1200 V margin or higher current headroom beyond 7 A

Compared with IRG4PH60KDPBF and FGA25N120ANTD, STGP7NB60KD uniquely combines 600 V rating, integrated soft-recovery diode, and verified 10 µs short-circuit withstand - making it optimal for space-constrained, cost-sensitive 1–3 kW motor and SMPS designs where layout simplicity and fault robustness are prioritized.

Availability

STGP7NB60KD is available at Aetrix Electronics and suitable for industrial motor drives, telecom SMPS, induction cooking systems, and UPS inverters requiring stable component supply and long-term production continuity.

Supply support for STGP7NB60KD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT family, engineered specifically for high-frequency motor control and switched-mode power conversion where short-circuit ruggedness and integrated diode performance are critical.

FAQ

What is the maximum gate-emitter voltage rating for STGP7NB60KD?

The absolute maximum V_GE is ±20 V. Operation above +20 V risks permanent gate oxide damage, while negative voltage beyond –20 V may cause gate leakage or threshold shift. Recommended gate drive is +15 V for saturation and –5 V to –10 V for reliable turn-off, per ST's AN419 application note.

Does STGP7NB60KD require a negative gate voltage for reliable turn-off?

No, it is fully functional with 0 V turn-off bias. However, applying –5 V to –10 V improves noise immunity and reduces Miller-induced false turn-on in high-dV/dt bridge configurations. The device's V_GE(th) of 5–7 V ensures stable blocking even with 0 V gate drive at elevated temperature.

How does the integrated diode differ from standard ultrafast diodes?

Its TurboSwitch™ diode exhibits soft reverse recovery (no current snap-off), with t_rr = 50 ns and Q_rr = 70 nC at 125°C - significantly lower than typical 100–200 nC values in discrete 600 V ultrafast diodes. This reduces voltage overshoot and EMI during commutation in half-bridge topologies.

Can STGP7NB60KD replace STGP7NC60HD in an existing design?

No - STGP7NC60HD is a 600 V, 7 A IGBT without short-circuit rating or co-packaged diode. STGP7NB60KD adds t_scw = 10 µs capability and integrated diode, but its V_CE(sat) is slightly higher (2.3 V vs. 2.1 V). Layout and gate drive must be revalidated due to different safe operating area and diode recovery behavior.

STGP7NB60KD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 14 A

Current - Collector Pulsed (Icm):: 56 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 7A

Power - Max:: 80 W

Switching Energy:: 140µJ (off)

Input Type:: Standard

Gate Charge:: 32.7 nC

Td (on/off) @ 25°C:: 15ns/50ns

Test Condition:: 480V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr):: 50 ns

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STGP7NB60KD FAQ

1.How can I place an order for STGP7NB60KD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP7NB60KD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP7NB60KD reliable?

The price and inventory of STGP7NB60KD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP7NB60KD is usually 5 days.

3.What payment methods are accepted for STGP7NB60KD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP7NB60KD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP7NB60KD?

STGP7NB60KD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP7NB60KD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP7NB60KD?

For technical support, including STGP7NB60KD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP7NB60KD requirements.

6.How does Aetrix verify that STGP7NB60KD is sourced from the original manufacturer or authorized distributors?

All STGP7NB60KD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP7NB60KD meets industry standards.

7.What is the process for return or replacement of STGP7NB60KD?

All STGP7NB60KD units undergo pre-shipment inspection (PSI). If there is an issue with STGP7NB60KD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP7NB60KD part is unused and in its original packaging.

Return procedure for STGP7NB60KD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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