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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGP8M120DF3

Name: STGP8M120DF3
Brand: STMicroelectronics
SKU: STGP8M120DF3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGP8M120DF3

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: STGP8M120DF3.pdf

Description:: TRENCH GATE FIELD-STOP, 1200 V,

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGP8M120DF3 from STMicroelectronics is a trench gate field-stop IGBT with 1200 V V_CES, 8 A continuous collector current at T_C = 100 °C, 1.85 V typical V_CE(sat) @ I_C = 8 A, and 10 µs short-circuit withstand time - designed for high-voltage inverter legs in industrial UPS and solar inverters.

For engineers reviewing the STGP8M120DF3 datasheet, STGP8M120DF3 pinout, STGP8M120DF3 application, or STGP8M120DF3 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, soft fast-recovery antiparallel diode (t_rr = 103 ns @ T_J = 25 °C), and low R_thJC of 0.9 °C/W for thermal management in high-power switching stages.

Technical Context

This IGBT employs ST's M-series trench gate field-stop architecture to balance conduction loss, switching energy (E_on = 0.39 mJ, E_off = 0.37 mJ @ T_J = 25 °C), and ruggedness - enabling operation up to 175 °C junction temperature with tight parameter distribution across production lots.

The integrated soft-recovery diode features low Q_rr (0.87 µC) and controlled dI_rr/dt (720 A/µs), minimizing voltage overshoot and EMI during commutation in hard-switched inductive loads such as motor drives and welding inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - supports DC bus voltages up to 960 V in 3-phase inverters with 20% safety margin.
I_C (T_C = 100 °C)	8 A - defines maximum continuous output current under real-world heatsink conditions.
V_CE(sat) (T_J = 25 °C)	1.85 V typ. - sets conduction loss baseline (14.8 W at 8 A), critical for efficiency in 10–20 kHz switching.
t_sc	10 µs - enables robust short-circuit protection without desaturation circuit complexity in industrial drives.
R_thJC (IGBT)	0.9 °C/W - allows direct thermal interface to heatsink; limits ΔT_J-C to 7.2 °C at 8 A conduction loss.
Q_g	32 nC - determines gate driver power requirement and influences turn-on speed with 33 Ω gate resistor.
t_rr (diode)	103 ns - ensures low reverse recovery loss and reduced snubber stress in freewheeling paths.

Pinout & Package

Supplied in TO-220 type A package with isolated tab (pin 2), where the collector is connected to the metal tab for direct heatsinking and electrical isolation per IEC 60747-9.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls IGBT conduction; requires ±20 V rating and 32 nC charge for full enhancement.
2 (TAB/C)	Collector (isolated tab)	High-current output node; electrically isolated from mounting surface; connects to DC+ bus in half-bridge leg.
3 (E)	Emitter	Power return path and gate-emitter reference; carries full load current and diode freewheeling current.

Key Features

Feature	Design Value
Positive V_CE(sat) tempco	Enables stable current sharing when multiple devices are paralleled without external ballasting resistors.
Tight parameter distribution	Reduces binning requirements and simplifies system-level derating for industrial-grade reliability.
Soft fast-recovery antiparallel diode	Minimizes voltage spikes and EMI during diode commutation, reducing snubber component count and size.
175 °C max junction temperature	Supports compact thermal design in space-constrained enclosures like solar string inverters and portable welders.

Applications

Industrial Drives

UPS Systems

Use Scenario: Variable-frequency control of 3-phase induction motors in HVAC and pump systems operating at 400–690 V AC input.

IC Role / Device Role / Timing Role: High-side/low-side switch in 6-pack inverter bridge; handles 8 A RMS output with 10 µs short-circuit tolerance.

Use Value: Positive V_CE(sat) tempco and tight parameter spread allow parallel configuration for >15 kW output without current imbalance.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from rectified 700 V DC bus during grid failure.

IC Role / Device Role / Timing Role: Inverter-stage IGBT in 10–15 kVA systems; switches at 8–16 kHz with low E_off (0.37 mJ) to maintain >95% efficiency.

Use Value: 1.47 °C/W diode R_thJC and soft recovery reduce thermal stress on freewheeling path during battery-backup mode transitions.

Solar Inverters

Welding Equipment

Use Scenario: DC-to-AC conversion in string inverters processing 600–1000 V PV array inputs with MPPT tracking.

IC Role / Device Role / Timing Role: Main switching device in H-bridge or NPC topology; operates at 16–20 kHz with 1200 V blocking capability.

Use Value: 1200 V V_CES rating accommodates transient overvoltages from lightning surges and line faults in outdoor installations.

Use Scenario: Inverter-based arc welding machines requiring precise current control and rapid duty cycling (e.g., 60% on-time at 20 kHz).

IC Role / Device Role / Timing Role: Primary switching element in resonant or hard-switched inverter stage driving step-down transformer primary.

Use Value: 10 µs short-circuit withstand time supports robust arc ignition and short-circuit handling without desat detection latency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN80N120B3	Higher I_C (80 A), higher Q_g (120 nC), no integrated diode	Requires external ultrafast diode; suited for higher-power (>25 kW) designs with discrete layout flexibility	Select when system-level thermal design permits larger gate drive and discrete diode integration.
Infineon IKP10N120CH3	Lower V_CE(sat) (1.7 V typ.), same 1200 V rating, tighter t_sc spec (12 µs)	Better conduction efficiency at partial load; optimized for solar microinverters with strict THD requirements	Prefer for cost-sensitive solar applications where <1.8 V V_CE(sat) improves annual yield by >0.5%.

Compared with IXGN80N120B3 and IKP10N120CH3, STGP8M120DF3 offers balanced trade-offs: lower gate charge than IXYS (32 nC vs. 120 nC) eases driver selection, and integrated soft diode eliminates layout complexity versus Infineon's discrete-diode requirement - making it optimal for mid-power (5–15 kW) industrial inverters where BOM count and thermal coupling matter.

Availability

STGP8M120DF3 is available at Aetrix Electronics and suitable for industrial drives, UPS systems, and solar inverters requiring stable component supply, long-lifecycle support, and consistent parametric performance across manufacturing lots.

Supply support for STGP8M120DF3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's M-series IGBT product line - engineered specifically for high-efficiency, high-reliability inverter systems where low conduction loss, short-circuit ruggedness, and safe paralleling are mandatory.

FAQ

What is the maximum gate-emitter voltage rating for STGP8M120DF3?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller capacitance coupling during high dv/dt events.

Does STGP8M120DF3 include an integrated freewheeling diode?

Yes - it integrates a soft, fast-recovery antiparallel diode rated for 8 A continuous forward current at T_C = 100 °C, with t_rr = 103 ns and Q_rr = 0.87 µC at 25 °C. This eliminates need for external diode in standard half-bridge configurations.

Can STGP8M120DF3 be paralleled with identical units without external current-sharing components?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution enable stable current sharing across paralleled units, provided gate drive impedance and PCB layout symmetry are matched within ±5%.

What thermal resistance values apply to the IGBT and diode sections separately?

R_thJC is 0.9 °C/W for the IGBT die and 1.47 °C/W for the integrated diode - measured from junction to case under specified test conditions. These values are independent and must be used separately in thermal modeling of conduction and freewheeling losses.

STGP8M120DF3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 16 A

Current - Collector Pulsed (Icm):: 32 A

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 8A

Power - Max:: -

Switching Energy:: 390µJ (on), 370µJ (Off)

Input Type:: Standard

Gate Charge:: 32 nC

Td (on/off) @ 25°C:: 20ns/126ns

Test Condition:: 600V, 8A, 33Ohm, 15V

Reverse Recovery Time (trr):: 103 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STGP8M120DF3 FAQ

1.How can I place an order for STGP8M120DF3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP8M120DF3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP8M120DF3 reliable?

The price and inventory of STGP8M120DF3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP8M120DF3 is usually 5 days.

3.What payment methods are accepted for STGP8M120DF3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP8M120DF3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP8M120DF3?

STGP8M120DF3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP8M120DF3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP8M120DF3?

For technical support, including STGP8M120DF3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP8M120DF3 requirements.

6.How does Aetrix verify that STGP8M120DF3 is sourced from the original manufacturer or authorized distributors?

All STGP8M120DF3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP8M120DF3 meets industry standards.

7.What is the process for return or replacement of STGP8M120DF3?

All STGP8M120DF3 units undergo pre-shipment inspection (PSI). If there is an issue with STGP8M120DF3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP8M120DF3 part is unused and in its original packaging.

Return procedure for STGP8M120DF3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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