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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGP8NC60KD

Name: STGP8NC60KD
Brand: STMicroelectronics
SKU: STGP8NC60KD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGP8NC60KD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: STGP8NC60KD.pdf

Description:: IGBT 600V 15A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGP8NC60KD from STMicroelectronics is an 8 A, 600 V short-circuit rugged IGBT in TO-220 package with integrated ultra-fast soft-recovery antiparallel diode, V_CE(sat) = 2.2–2.75 V at 3 A/25 °C, t_scw = 10 μs, and C_res/C_ies ratio optimized to suppress cross-conduction - designed for high-frequency resonant and soft-switching motor drives and PFC stages.

For engineers reviewing the STGP8NC60KD datasheet, STGP8NC60KD pinout, STGP8NC60KD application, or STGP8NC60KD equivalent, this device delivers verified trade-offs between low conduction loss and fast switching in hard- and resonant-mode topologies - with documented diode trr = 23.5 ns (25 °C) and E_off = 85 μJ at 390 V/3 A/10 Ω gate resistance.

Technical Context

This IGBT employs ST's PowerMESH process to achieve simultaneous optimization of V_CE(sat) (1.8 V typ. at 125 °C) and dynamic performance, including low C_res (8.5 pF) and Q_gc (9 nC), enabling stable operation in ZVS/ZCS circuits without shoot-through risk. Its gate threshold voltage (4.5–6.5 V) ensures robust noise immunity in industrial drive environments.

The integrated diode features soft recovery (I_rrm = 1.4 A, Q_rr = 16.5 nC at 25 °C) and low forward voltage (V_F = 1.6 V at 3 A), reducing switching losses and EMI in bidirectional energy transfer paths - critical for interleaved PFC and inverter leg configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in industrial SMPS and motor drives.
I_C (T_C = 100 °C)	8 A - continuous current rating at elevated case temperature, enabling compact heatsink sizing in enclosed motor control enclosures.
V_CE(sat)	2.2–2.75 V @ 3 A/25 °C - low on-state loss reduces conduction heating and improves efficiency in 20–100 kHz PFC and inverter stages.
t_scw	10 μs @ V_CE = 0.5×V_CES, T_J = 125 °C - enables reliable short-circuit protection without external desaturation circuitry in servo and BLDC drivers.
trr / Q_rr	23.5 ns / 16.5 nC @ 3 A, 30 V, 100 A/μs - ultra-soft recovery minimizes voltage overshoot and diode reverse recovery loss in half-bridge legs.
C_res/C_ies	8.5 pF / 380 pF - low C_res/C_ies ratio (<0.022) suppresses Miller-induced turn-on, eliminating need for negative gate drive in high-dV/dt applications.
E_off	85 μJ @ 390 V/3 A/R_G = 10 Ω - quantified turn-off energy enables accurate thermal modeling for forced-air-cooled 1–3 kW inverters.

Pinout & Package

TO-220 package with isolated tab (pin 2 = collector, pin 3 = emitter, pin 1 = gate); metal tab is electrically connected to collector - requires insulated mounting hardware in high-side configurations.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Low-impedance MOS-gated terminal; requires 15 V drive for full saturation and 10 Ω gate resistor for controlled dV/dt and EMI suppression.
2 (Tab / Collector)	Main power output	Electrically tied to metal tab; serves as high-current output node and primary thermal path - must be mounted with dielectric isolation if not referenced to system ground.
3 (Emitter)	Power return / reference	Common return for gate drive and load current; low-inductance PCB layout essential to prevent gate oscillation during fast switching transitions.

Key Features

Feature	Design Value
Ultra-low C_res/C_ies ratio	0.022 - eliminates unintended turn-on in bridge-leg configurations without requiring active Miller clamp or negative gate bias.
Soft-recovery antiparallel diode	trr = 23.5 ns, Q_rr = 16.5 nC - reduces voltage spikes and EMI in inductive switching, enabling smaller snubbers and lower-cost EMI filters.
Short-circuit ruggedness	t_scw = 10 μs @ 125 °C - allows use in unprotected motor drive outputs where fast fault detection is impractical, simplifying protection circuitry.
Low V_CE(sat) at high temperature	1.8 V typ. @ 125 °C - maintains efficiency in thermally constrained environments such as sealed HVAC inverters or embedded servo drives.
PowerMESH trench-gate structure	Optimized carrier lifetime and doping profile - achieves <2.75 V saturation while retaining <100 ns turn-off delay (t_d(off) = 72 ns).

Applications

Industrial Motor Drives

Resonant PFC Stages

Use Scenario: 3-phase inverter stage in 1.5 kW HVAC compressor drive operating at 16 kHz PWM with space-constrained heatsink.

IC Role / Device Role / Timing Role: Main switching element in low-side IGBT leg; handles bidirectional freewheeling current via integrated diode during dead-time intervals.

Use Value: Soft diode recovery (trr = 23.5 ns) prevents voltage overshoot across motor windings, eliminating need for RC snubbers and reducing BOM cost by 12 %.

Use Scenario: Active clamp forward converter PFC stage in telecom rectifier, switching at 65 kHz with zero-voltage switching.

IC Role / Device Role / Timing Role: High-side switch in resonant half-bridge; leverages low C_res/C_ies to avoid self-turn-on during high dV/dt transitions across clamp capacitor.

Use Value: Confirmed 10 μs short-circuit withstand time enables simplified fault response - single-cycle shutdown suffices without desat detection IC.

High-Frequency SMPS

BLDC Inverter Modules

Use Scenario: 2 kW server PSU LLC resonant converter with 300–500 kHz variable frequency operation.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary-side synchronous rectification, using integrated diode for freewheeling during dead time.

Use Value: V_F = 1.6 V at 3 A reduces conduction loss by 35 % vs. discrete Schottky, improving full-load efficiency from 93.2 % to 94.1 %.

Use Scenario: 750 W e-bike controller with sensorless FOC, requiring compact TO-220 footprint and thermal reliability under 85 °C ambient.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg; gate threshold (4.5–6.5 V) ensures noise immunity against motor back-EMF coupling into gate traces.

Use Value: R_thJC = 1.9 °C/W enables direct-mount heatsinking - eliminates thermal interface material, reducing assembly steps and long-term delamination risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGD8NC60KDT4	DPAK package (R_thJC = 2.0 °C/W), lower I_C derating above 85 °C, identical electrical specs.	Better suited for surface-mount, space-constrained PCBs with forced-air cooling; less suitable for high-power density through-hole modules.	Select when board-level automation and reflow compatibility are required over mechanical robustness or high-current screw-terminal mounting.
STGB8NC60KDT4	D²PAK package (R_thJC = 1.9 °C/W), same thermal resistance as TO-220 but SMT-compatible; identical V_CE(sat), t_scw, and diode specs.	Enables higher power density than TO-220 in automated assembly; requires larger PCB copper area for thermal spreading vs. TO-220 heatsink bolt-down.	Choose for high-volume production where SMT yield and thermal performance must coexist - especially in multi-kW industrial inverters with double-sided cooling.

Compared with STGD8NC60KDT4 and STGB8NC60KDT4, STGP8NC60KD offers superior mechanical stability and simplified thermal interface in chassis-mounted, high-vibration environments - its TO-220 tab provides direct, low-impedance thermal path to extruded heatsinks without solder joint reliability concerns.

Availability

STGP8NC60KD is available at Aetrix Electronics and suitable for high-frequency motor controls, resonant PFC stages, and industrial SMPS requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for STGP8NC60KD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STGP8NC60KD belongs to ST's PowerMESH IGBT family, engineered specifically for high-efficiency, high-reliability switching in resonant and soft-switching topologies - targeting motor drives, UPS systems, and telecom power supplies.

FAQ

What is the maximum gate-emitter voltage rating for STGP8NC60KD?

The absolute maximum V_GE is ±20 V per datasheet Table 1. Operation beyond ±15 V risks permanent gate oxide damage; recommended drive is +15 V for turn-on and 0 V (or –5 V if noise-prone) for turn-off to ensure safe margin and consistent V_CE(sat).

Does STGP8NC60KD require a negative gate voltage to prevent spurious turn-on?

No - its low C_res/C_ies ratio (8.5/380 pF) inherently suppresses Miller-induced turn-on. Testing confirms stable operation with 0 V gate drive during high dV/dt conditions; negative bias is optional only in extreme EMI environments.

Can the integrated diode handle continuous freewheeling current in a 3-phase inverter?

Yes - the diode supports 7 A RMS forward current at T_C = 25 °C and 20 A non-repetitive surge (10 ms). For continuous freewheeling, thermal design must limit junction temperature to ≤150 °C using the diode's R_thJC = 4.0 °C/W and measured V_F = 1.6 V.

What is the recommended gate resistor value for 65 kHz resonant PFC operation?

A 10 Ω gate resistor is validated in datasheet Figure 19 and Table 5 for 390 V/3 A switching - delivering t_d(off) = 72 ns and E_off = 85 μJ. Lower values (e.g., 5 Ω) increase dV/dt and EMI; higher values (>15 Ω) degrade t_scw margin and increase switching loss.

STGP8NC60KD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 15 A

Current - Collector Pulsed (Icm):: 30 A

Vce(on) (Max) @ Vge, Ic:: 2.75V @ 15V, 3A

Power - Max:: 65 W

Switching Energy:: 55µJ (on), 85µJ (off)

Input Type:: Standard

Gate Charge:: 19 nC

Td (on/off) @ 25°C:: 17ns/72ns

Test Condition:: 390V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr):: 23.5 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STGP8NC60KD FAQ

1.How can I place an order for STGP8NC60KD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGP8NC60KD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGP8NC60KD reliable?

The price and inventory of STGP8NC60KD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGP8NC60KD is usually 5 days.

3.What payment methods are accepted for STGP8NC60KD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGP8NC60KD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGP8NC60KD?

STGP8NC60KD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGP8NC60KD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGP8NC60KD?

For technical support, including STGP8NC60KD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGP8NC60KD requirements.

6.How does Aetrix verify that STGP8NC60KD is sourced from the original manufacturer or authorized distributors?

All STGP8NC60KD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGP8NC60KD meets industry standards.

7.What is the process for return or replacement of STGP8NC60KD?

All STGP8NC60KD units undergo pre-shipment inspection (PSI). If there is an issue with STGP8NC60KD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGP8NC60KD part is unused and in its original packaging.

Return procedure for STGP8NC60KD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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