Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGSB200M65DF2AG

Name: STGSB200M65DF2AG
Brand: STMicroelectronics
SKU: STGSB200M65DF2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGSB200M65DF2AG

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: 9-PowerSMD

Datasheet:: STGSB200M65DF2AG.pdf

Description:: DISCRETE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:103

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGSB200M65DF2AG from STMicroelectronics is an AEC-Q101-qualified automotive-grade trench gate field-stop IGBT with integrated freewheeling diode, rated for 650 V collector-emitter voltage and 200 A continuous collector current at T_C = 100 °C. It delivers V_CE(sat) = 1.65 V (typ.) at I_C = 200 A, 175 °C maximum junction temperature, 3400 V_rms isolation rating, and 6 μs short-circuit withstand time - optimized for high-reliability traction inverter modules.

For engineers reviewing the STGSB200M65DF2AG datasheet, STGSB200M65DF2AG pinout, STGSB200M65DF2AG application, or STGSB200M65DF2AG equivalent, this device is selected for high-power motor drive systems requiring robust short-circuit capability, tight parameter distribution for parallel operation, low thermal resistance (0.21 °C/W), and UL-recognized isolation in ACEPACK SMIT surface-mount packaging.

Technical Context

This IGBT employs a proprietary trench gate field-stop structure enabling low conduction loss while maintaining 6 μs short-circuit ruggedness under V_CC ≤ 400 V and T_J(start) = 150 °C. Its positive V_CE(sat) temperature coefficient ensures current sharing stability in paralleled configurations.

The integrated diode features soft reverse recovery (t_rr = 174.5 ns typ. at 25 °C, 264.3 ns at 175 °C) and low Q_rr (8.6 µC typ. at 25 °C), minimizing switching losses and voltage overshoot in inductive loads. The DBC substrate enables simultaneous electrical isolation and efficient heat transfer via the top-side thermal pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage before avalanche; supports 400 V DC-link inverters with 1.6× safety margin.
I_C (continuous, T_C = 100 °C)	200 A - Sustained output current capability at typical heatsink temperature in traction inverters.
V_CE(sat) (T_J = 25 °C)	1.65 V (typ.) - Low conduction loss reduces power dissipation and improves system efficiency at rated load.
R_thJC (IGBT)	0.21 °C/W - Enables high power density by limiting junction-to-case temperature rise to 42 °C at 200 W dissipation.
t_sc	6 μs - Minimum short-circuit survival time under worst-case fault conditions, critical for ASIL-D inverter protection.
V_ISO	3400 V_rms/min - Reinforced isolation between pins and heatsink plate, satisfying IEC 60664-1 CTI requirements for EV power stages.
T_J(max)	175 °C - Extended thermal operating range allows derating flexibility and compatibility with high-temperature coolant loops.

Pinout & Package

STGSB200M65DF2AG is housed in the ACEPACK SMIT surface-mount package (23.0 × 32.7 mm footprint, 4.0 mm height), featuring direct bond copper (DBC) substrate, electrically isolated top-side thermal pad, and 12-pin configuration with dual emitter/source terminals for current sensing and Kelvin gate drive support.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6	Emitter (E1–E6)	Parallel low-inductance emitter connections; pins 1–3 serve main current path, pins 4–6 enable Kelvin sensing for precise gate control.
7, 8, 9	Collector (C1–C3)	Three parallel collector terminals reduce current density and parasitic inductance in high-di/dt traction switching.
10, 11	Gate (G1, G2)	Dual gate inputs support redundant drive or split gate resistance for EMI optimization and turn-on/turn-off tuning.
12	Isolated Thermal Pad (Top Side)	Electrically isolated copper pad for direct thermal interface to heatsink; no electrical connection, enables safe double-sided cooling.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain applications including EV traction inverters per stress test requirements.
Positive V_CE(sat) tempco	Enables inherent current balancing in paralleled IGBTs without external active balancing circuitry.
Tight parameter distribution	±5% V_CE(sat) spread across production lot - reduces design margin overhead and improves system-level efficiency predictability.
Low R_thJC + isolated thermal pad	0.21 °C/W IGBT junction-to-case + 3400 V_rms isolation enables compact, high-power-density inverter layouts with single-sided heatsinking.
Soft-recovery integrated diode	Q_rr = 8.6 µC (25 °C), dI_rr/dt = 1503 A/µs - limits voltage spike and EMI during commutation in motor phase-legs.

Applications

Electric Vehicle Traction Inverter

Onboard Charger (OBC) DC-AC Stage

Use Scenario: High-power 3-phase inverter converting 400–800 V battery DC to variable-frequency AC for permanent magnet synchronous motors.

IC Role / Device Role / Timing Role: Main switching device in phase-leg topology; handles 200 A RMS motor current with 6 μs fault tolerance and soft diode commutation.

Use Value: Enables >97% inverter efficiency at 10 kHz switching frequency while meeting ISO 26262 ASIL-C functional safety requirements through intrinsic ruggedness.

Use Scenario: Bidirectional DC-AC stage in 11–22 kW OBC systems supporting grid-to-vehicle and vehicle-to-grid (V2G) operation.

IC Role / Device Role / Timing Role: Inverter leg switch in dual-active-bridge or three-phase PWM rectifier topology; operates at 30–50 kHz with controlled dv/dt.

Use Value: Low V_CE(sat) and soft diode recovery reduce conduction and switching losses, improving OBC efficiency and thermal management under partial-load conditions.

Industrial Motor Drive (HVAC Compressor)

Renewable Energy Inverter (Solar String)

Use Scenario: Variable-speed drive for 50–100 kW HVAC compressors in commercial buildings, operating continuously at ambient up to 65 °C.

IC Role / Device Role / Timing Role: High-current IGBT in 650 V, 200 A three-phase bridge; leverages 175 °C T_J(max) and tight parameter spread for long-term reliability.

Use Value: Eliminates need for oversized heatsinks due to 0.21 °C/W R_thJC, reducing system volume by ~22% versus comparable TO-247 devices.

Use Scenario: Central or string inverter stage converting PV array DC output to grid-synchronized AC, exposed to outdoor thermal cycling and humidity.

IC Role / Device Role / Timing Role: High-voltage switching element in NPC or T-type multilevel topology; relies on 3400 V_rms isolation and AEC-Q101 robustness for field longevity.

Use Value: UL 1557 recognition and reinforced isolation ensure compliance with UL 1741 SB and IEC 62109-1, accelerating certification for utility-interconnected solar systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon FF200R12ME4	1200 V rating, 200 A, R_thJC = 0.23 °C/W, t_sc = 10 μs, no integrated diode.	Targets higher DC-link systems (e.g., 800 V+ EV platforms); requires external diode selection and layout optimization.	Prefer when system voltage exceeds 650 V or longer short-circuit immunity is mandatory; avoid if space-constrained or diode integration is required.
ON Semiconductor AFGHL200T65SQDC	650 V, 200 A, R_thJC = 0.25 °C/W, V_CE(sat) = 1.75 V (typ.), AEC-Q101 qualified, same ACEPACK SMIT footprint.	Higher conduction loss and thermal resistance; softer diode recovery but lower dI_rr/dt (1100 A/µs).	Acceptable for cost-sensitive industrial drives where 0.1 V higher V_CE(sat) and 0.04 °C/W higher R_thJC are tolerable; not recommended for high-efficiency traction inverters.

Compared with FF200R12ME4 and AFGHL200T65SQDC, STGSB200M65DF2AG offers the lowest V_CE(sat) and best thermal performance in its 650 V class, with integrated diode and automotive-qualified ruggedness - making it optimal for space- and efficiency-critical traction inverters where 650 V DC-link voltage is standard.

Availability

STGSB200M65DF2AG is available at Aetrix Electronics and suitable for electric vehicle traction inverters, onboard chargers, industrial motor drives, and renewable energy inverters requiring stable component supply, automotive-grade reliability, and high-power density packaging.

Supply support for STGSB200M65DF2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's M-series IGBT portfolio - engineered specifically for traction inverter applications where low-loss conduction, short-circuit ruggedness, and parallel-safe operation are essential system requirements.

FAQ

What is the maximum gate-emitter voltage rating for STGSB200M65DF2AG?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient pulses ≤10 μs. Exceeding ±20 V continuously risks gate oxide degradation; recommended gate drive uses +15 V turn-on and –8 V turn-off to ensure reliable switching and minimize Miller-induced false triggering.

Does STGSB200M65DF2AG require external gate resistors, and what value is recommended?

Yes - external gate resistors are mandatory for controllable dv/dt and EMI management. The datasheet specifies R_G = 4.7 Ω for characterization (E_on/E_off, t_d(on)/t_d(off)). For traction inverters, 3.3–6.8 Ω is typical: lower values improve switching speed but increase EMI; higher values reduce losses in gate driver but extend switching times.

How is thermal management implemented given the top-side thermal pad?

The top-side thermal pad is electrically isolated and must be thermally bonded to the heatsink using a dielectric thermal interface material (TIM) rated for ≥3400 V_rms. Mechanical mounting pressure should be 50–100 psi; TIM thickness ≤0.1 mm ensures minimal thermal resistance. No solder or conductive paste may contact the pad.

Can STGSB200M65DF2AG be paralleled, and what layout considerations apply?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution enable stable paralleling. Layout requires symmetrical gate drive paths (matched trace length/impedance), individual gate resistors per device, Kelvin emitter connections for each IGBT, and balanced current-sharing busbars to minimize dynamic current imbalance.

STGSB200M65DF2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: 9-PowerSMD

Packaging:: Bulk

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 216 A

Current - Collector Pulsed (Icm):: 700 A

Vce(on) (Max) @ Vge, Ic:: 2.05V @ 15V, 200A

Power - Max:: 714 W

Switching Energy:: 3.82mJ (on), 6.97mJ (off)

Input Type:: Standard

Gate Charge:: 554 nC

Td (on/off) @ 25°C:: 122ns/250ns

Test Condition:: 400V, 200A, 4.7Ohm, 15V

Reverse Recovery Time (trr):: 174.5 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 9-ACEPACK SMIT

STGSB200M65DF2AG FAQ

1.How can I place an order for STGSB200M65DF2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STGSB200M65DF2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGSB200M65DF2AG reliable?

The price and inventory of STGSB200M65DF2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGSB200M65DF2AG is usually 5 days.

3.What payment methods are accepted for STGSB200M65DF2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGSB200M65DF2AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGSB200M65DF2AG?

STGSB200M65DF2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGSB200M65DF2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGSB200M65DF2AG?

For technical support, including STGSB200M65DF2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGSB200M65DF2AG requirements.

6.How does Aetrix verify that STGSB200M65DF2AG is sourced from the original manufacturer or authorized distributors?

All STGSB200M65DF2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGSB200M65DF2AG meets industry standards.

7.What is the process for return or replacement of STGSB200M65DF2AG?

All STGSB200M65DF2AG units undergo pre-shipment inspection (PSI). If there is an issue with STGSB200M65DF2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGSB200M65DF2AG part is unused and in its original packaging.

Return procedure for STGSB200M65DF2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…