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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW100H65FB2-4

Name: STGW100H65FB2-4
Brand: STMicroelectronics
SKU: STGW100H65FB2-4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW100H65FB2-4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-4

Datasheet:: STGW100H65FB2-4.pdf

Description:: TRENCH GATE FIELD-STOP, 650 V, 1

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW100H65FB2-4 from STMicroelectronics is a 650 V, 100 A high-speed trench gate field-stop IGBT in TO-247-4 package with Kelvin emitter pin, optimized for low conduction loss (V_CE(sat) = 1.55 V typ. @ 100 A) and minimized tail current. It delivers high efficiency in fast-switching power conversion stages including solar inverters and UPS systems.

For engineers reviewing the STGW100H65FB2-4 datasheet, STGW100H65FB2-4 pinout, STGW100H65FB2-4 application, or STGW100H65FB2-4 equivalent, key selection criteria include its 0.34 °C/W R_thJC, ±20 V gate rating, 288 nC total gate charge, and Kelvin-emitter layout enabling precise gate drive control under high di/dt conditions.

Technical Context

This IGBT employs ST's HB2 series trench gate field-stop structure, engineered to improve V_CE(sat) behavior at low currents while reducing switching energy. Its positive V_CE(sat) temperature coefficient ensures current sharing stability in parallel configurations.

The TO-247-4 package integrates a dedicated Kelvin emitter terminal (Pin 2) separate from the main emitter (Pin 1), decoupling gate loop inductance from power current path. This enables accurate gate voltage control during hard-switching transients up to 175 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Withstands DC bus voltages up to 650 V without breakdown, suitable for 400 V AC input rectified systems.
I_C (T_C = 100 °C)	91 A - Continuous current capability at 100 °C case temperature, enabling compact heatsink design in high-power converters.
V_CE(sat) (T_J = 175 °C)	1.9 V - Low saturation voltage at max operating temperature reduces conduction losses and thermal stress in PFC and inverter legs.
R_thJC	0.34 °C/W - Enables efficient heat transfer from die to heatsink, supporting >440 W power dissipation at T_C = 25 °C.
Q_g	288 nC - Total gate charge determines driver strength requirement; compatible with standard 2–4 A peak gate drivers.
E_off (T_J = 175 °C)	2154 µJ - Measured turn-off energy at elevated temperature informs snubber sizing and thermal design for 10–20 kHz switching applications.
T_J max	175 °C - Maximum junction temperature allows operation in harsh environments without derating below industrial grade limits.

Pinout & Package

STGW100H65FB2-4 uses the TO-247-4 package with isolated tab (collector-connected), featuring four terminals: Collector (Tab), Main Emitter (Pin 1), Gate (Pin 4), and Kelvin Emitter (Pin 2). The Kelvin emitter provides low-inductance gate return path for stable high-speed switching.

Pin/Terminal	Circuit Role	Design Meaning
Tab (C)	Collector	High-current output terminal, electrically connected to metal tab for direct heatsink mounting and low thermal resistance.
Pin 1 (E)	Main Emitter	Power return path for load current; carries full 100 A conduction current and must be routed with low impedance.
Pin 2 (K)	Kelvin Emitter	Dedicated low-current emitter reference for gate driver feedback; eliminates source inductance impact on V_GE control.
Pin 4 (G)	Gate	Control input for MOS-controlled IGBT; requires 15 V nominal drive with ±20 V absolute maximum rating.

Key Features

Feature	Design Value
Minimized tail current	Reduces turn-off energy (E_off = 1137 µJ @ 25 °C) and enables higher switching frequencies without excessive heating.
Tight parameter distribution	Ensures consistent V_CE(sat) and switching times across production lots, simplifying parallel IGBT design and thermal modeling.
Positive V_CE(sat) tempco	Provides inherent current balancing in paralleled devices, eliminating need for external emitter resistors in multi-chip modules.
Low R_thJC (0.34 °C/W)	Supports high power density layouts by limiting junction-to-case temperature rise to ≤34 °C at 100 W dissipation.

Applications

Welding Power Supplies

Uninterruptible Power Supplies (UPS)

Use Scenario: High-current DC output generation with rapid load transients and tight regulation requirements.

IC Role / Device Role / Timing Role: Primary switching device in inverter stage converting DC bus to high-frequency AC for transformer isolation and rectification.

Use Value: Low V_CE(sat) and minimized tail current reduce average conduction loss and enable <10 µs current rise/fall times for arc stability.

Use Scenario: Online double-conversion UPS delivering clean sine-wave output during grid failure.

IC Role / Device Role / Timing Role: Inverter-stage switch in 3-phase output stage operating at 8–16 kHz with strict THD and efficiency targets.

Use Value: Tight parameter distribution and 175 °C junction rating support reliable parallel operation and extended runtime under overload conditions.

Solar Inverters

Industrial Battery Chargers

Use Scenario: Grid-tied string or central inverter converting PV DC to 50/60 Hz AC with MPPT and anti-islanding protection.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC or T-type inverter topology handling 1000 V DC link with bidirectional current capability.

Use Value: Kelvin emitter pin enables precise gate control during zero-crossing commutation, minimizing shoot-through risk and improving efficiency above 98%.

Use Scenario: High-power EVSE or industrial battery formation chargers requiring programmable CC/CV profiles up to 1000 V.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge or LLC resonant converter primary side.

Use Value: Low thermal resistance and high pulsed current rating (I_CP = 300 A) support burst-mode charging cycles with minimal thermal cycling stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN100N60B4	600 V rating, lower V_CE(sat) (1.45 V), no Kelvin emitter, TO-247-3 package	Limited to ≤600 V DC bus; lacks Kelvin pin for high-di/dt gate control	Prefer where voltage margin is sufficient and gate loop inductance is not critical.
Infineon IKW100N65ES6	650 V, 100 A, includes integrated freewheeling diode, TO-247-3, higher E_off (2400 µJ @ 175 °C)	Diode co-packaging simplifies layout but increases switching loss; no Kelvin emitter	Choose when diode integration outweighs switching loss penalty and gate drive precision is secondary.

Compared with IXGN100N60B4 and IKW100N65ES6, STGW100H65FB2-4 uniquely combines 650 V rating, Kelvin emitter, and sub-2 V V_CE(sat) at 175 °C-enabling higher efficiency and reliability in demanding 10–20 kHz solar and UPS inverters where gate control fidelity is critical.

Availability

STGW100H65FB2-4 is available at Aetrix Electronics and suitable for welding power supplies, uninterruptible power supplies (UPS), solar inverters, and industrial battery chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for STGW100H65FB2-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This part belongs to ST's HB2-series high-speed IGBT product line, engineered specifically to maximize efficiency in fast-switching power conversion applications such as solar inverters, UPS, and industrial motor drives.

FAQ

What is the purpose of the Kelvin emitter pin (Pin 2) on STGW100H65FB2-4?

The Kelvin emitter (Pin 2) provides a dedicated low-inductance return path for the gate driver, isolating gate loop inductance from high-current emitter paths. This prevents voltage spikes during fast switching and ensures accurate V_GE control, especially critical in high-di/dt applications like solar inverters and UPS systems.

Can STGW100H65FB2-4 replace TO-247-3 IGBTs in existing designs?

Direct replacement is not recommended without layout revision: Pin 2 (Kelvin emitter) must be connected to the gate driver return, while Pin 1 (main emitter) carries full load current. The TO-247-4 footprint differs mechanically and electrically-requiring updated PCB routing, gate driver grounding, and thermal interface design.

What is the maximum recommended gate resistor value for reliable switching?

Based on datasheet test conditions (R_G(on) = 8.2 Ω, R_G(off) = 3.3 Ω), the upper limit for R_G(off) is ~10 Ω to maintain E_off < 2500 µJ at 175 °C. Exceeding this increases switching loss and thermal stress; values below 2 Ω risk excessive dV/dt and EMI in unshielded systems.

Does STGW100H65FB2-4 include an integrated freewheeling diode?

No. STGW100H65FB2-4 is a standalone IGBT without an integrated diode. It is designed to be paired with a discrete ultrafast diode (e.g., STGWA100H65DFB2, referenced in the datasheet) in complementary half-bridge configurations for bidirectional current handling in inverter topologies.

STGW100H65FB2-4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: HB2

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 145 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 1.8V @ 15V, 100A

Power - Max:: 441 W

Switching Energy:: 1.06mJ (on), 1.14mJ (off)

Input Type:: Standard

Gate Charge:: 288 nC

Td (on/off) @ 25°C:: 23ns/141ns

Test Condition:: 400V, 100A, 3.3Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

STGW100H65FB2-4 FAQ

1.How can I place an order for STGW100H65FB2-4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW100H65FB2-4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW100H65FB2-4 reliable?

The price and inventory of STGW100H65FB2-4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW100H65FB2-4 is usually 5 days.

3.What payment methods are accepted for STGW100H65FB2-4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW100H65FB2-4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW100H65FB2-4?

STGW100H65FB2-4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW100H65FB2-4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW100H65FB2-4?

For technical support, including STGW100H65FB2-4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW100H65FB2-4 requirements.

6.How does Aetrix verify that STGW100H65FB2-4 is sourced from the original manufacturer or authorized distributors?

All STGW100H65FB2-4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW100H65FB2-4 meets industry standards.

7.What is the process for return or replacement of STGW100H65FB2-4?

All STGW100H65FB2-4 units undergo pre-shipment inspection (PSI). If there is an issue with STGW100H65FB2-4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW100H65FB2-4 part is unused and in its original packaging.

Return procedure for STGW100H65FB2-4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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