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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW10M65DF2

Name: STGW10M65DF2
Brand: STMicroelectronics
SKU: STGW10M65DF2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW10M65DF2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW10M65DF2.pdf

Description:: TRENCH GATE FIELD-STOP IGBT M SE

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Product details

Overview

STGW10M65DF2 from STMicroelectronics is a trench gate field-stop IGBT with integrated soft fast recovery antiparallel diode in TO-247 package, rated for 650 V V_CES, 10 A continuous collector current at T_C = 100 °C, and 6 µs short-circuit withstand time at V_GE = 15 V and T_Jstart = 150 °C. It serves as the main switching device in motor control inverters and PFC stages where low conduction loss (V_CE(sat) = 1.55 V typ. @ I_C = 10 A, T_J = 25 °C) and safe paralleling capability are required.

For engineers reviewing the STGW10M65DF2 datasheet, STGW10M65DF2 pinout, STGW10M65DF2 application, or STGW10M65DF2 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient, tight parameter distribution, R_thJC = 1.3 °C/W (IGBT), 175 °C max junction temperature, and integrated diode with t_rr = 96 ns (T_J = 25 °C) and Q_rr = 373 nC.

Technical Context

This IGBT employs ST's M-series trench gate field-stop structure optimized for balanced conduction and switching losses in 650 V industrial inverters. Its design integrates a monolithic antiparallel diode with soft recovery characteristics-t_rr = 96 ns and dI_rr/dt = 661 A/µs-to minimize voltage overshoot and EMI during turn-off.

The device features a positive V_CE(sat) temperature coefficient (1.55 V @ 25 °C → 2.1 V @ 175 °C) and tight parameter spread, enabling stable current sharing in parallel configurations without external emitter resistors. Thermal resistance is specified at R_thJC = 1.3 °C/W for the IGBT section and 2.08 °C/W for the diode.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage under open-gate condition; defines system DC bus rating limit.
I_C (cont, T_C = 100 °C)	10 A - Continuous collector current derated for thermal management in real-world heatsink conditions.
V_CE(sat) (typ)	1.55 V @ I_C = 10 A, V_GE = 15 V, T_J = 25 °C - Directly determines conduction loss (P_cond ≈ 15.5 W at full load).
t_sc	6 µs @ V_CC ≤ 400 V, V_GE = 15 V, T_Jstart = 150 °C - Enables robust short-circuit protection timing in motor drive fault handling.
R_thJC (IGBT)	1.3 °C/W - Junction-to-case thermal resistance; sets minimum heatsink requirement for 115 W total dissipation.
t_rr (diode)	96 ns @ I_F = 10 A, V_R = 400 V, di/dt = 1000 A/µs - Defines reverse recovery speed and associated switching loss contribution.
Q_g	28 nC - Total gate charge; determines driver output current requirement (e.g., ~1.3 A peak for 22 Ω gate resistor, 15 V swing).

Pinout & Package

STGW10M65DF2 uses the standard TO-247 package with three terminals: Collector (pin 1), Gate (pin 2), and Emitter (pin 3). The case is electrically connected to the collector, requiring insulated mounting hardware in most applications.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC bus (+) in inverter leg; carries full load current and must be thermally coupled to heatsink.
Gate (G)	Control input	Receives 15 V logic-level drive; requires low-inductance layout due to 28 nC Q_g and fast switching transitions.
Emitter (E)	Power return and reference node	Serves as common reference for gate drive and current sensing; layout must minimize stray inductance to avoid false triggering.

Key Features

Feature	Design Value
Positive V_CE(sat) tempco	Enables inherent current balancing in parallel IGBT configurations without emitter resistors or active current sharing circuits.
Tight parameter distribution	Reduces unit-to-unit variation in V_CE(sat), t_sc, and Q_g, improving consistency in multi-device systems and simplifying gate driver design.
Soft fast recovery diode	Diode t_rr = 96 ns with low dI_rr/dt (661 A/µs) minimizes voltage spikes and EMI during freewheeling commutation.
175 °C max junction temperature	Supports operation in high-ambient environments (e.g., enclosed UPS cabinets) and enables higher power density through elevated thermal margins.

Applications

Motor Control Inverter

Uninterruptible Power Supply (UPS)

Use Scenario: Three-phase 650 V inverter driving induction or PMSM motors in HVAC compressors or industrial pumps.

IC Role / Device Role / Timing Role: Main switching element in each half-bridge leg; handles PWM switching at 8–16 kHz with precise dead-time control.

Use Value: Low V_CE(sat) reduces conduction loss by ~12% vs. legacy 650 V IGBTs, improving inverter efficiency at partial load.

Use Scenario: Online double-conversion UPS with bidirectional AC/DC and DC/AC stages operating at 50/60 Hz fundamental plus high-frequency PWM.

IC Role / Device Role / Timing Role: Inverter-stage switch delivering clean sinusoidal output; operates with soft-switched auxiliary circuits for reduced stress.

Use Value: 6 µs short-circuit withstand time allows reliable detection and shutdown during output short events without device destruction.

Active PFC Boost Converter

General Purpose Industrial Inverter

Use Scenario: 3 kW single-phase boost PFC stage in server PSUs or medical power supplies.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost topology; switches at 60–100 kHz.

Use Value: Integrated diode with Q_rr = 373 nC enables zero-voltage switching (ZVS) assist and reduces boost diode loss and EMI.

Use Scenario: Modular 5–10 kW variable frequency drive for conveyor systems or fans.

IC Role / Device Role / Timing Role: Core power switch in scalable inverter modules; supports parallel operation across multiple units.

Use Value: Tight parameter spread and positive V_CE(sat) tempco allow direct paralleling of up to four devices per phase without current imbalance compensation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN100N60B3	600 V rating, higher I_C (100 A), higher Q_g (120 nC), no integrated diode	Requires external ultrafast diode; better suited for high-current, lower-frequency (<10 kHz) hard-switched applications	Select when higher current headroom and discrete diode optimization are prioritized over integration and compact layout.
Infineon IKW10N60T	600 V rating, lower V_CE(sat) (1.45 V), shorter t_sc (3 µs), TO-247-3L package	Limited short-circuit robustness; requires faster protection response; optimized for high-efficiency, low-loss SMPS rather than motor drives	Select for high-frequency (>30 kHz) resonant converters where conduction loss dominates and short-circuit immunity is secondary.

Compared with IXGN100N60B3 and IKW10N60T, STGW10M65DF2 offers superior short-circuit ruggedness (6 µs), integrated diode functionality, and 650 V blocking margin-making it uniquely suitable for industrial motor drives and UPS systems requiring both reliability and layout simplicity.

Availability

STGW10M65DF2 is available at Aetrix Electronics and suitable for motor control inverters, uninterruptible power supplies (UPS), and active PFC boost converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for STGW10M65DF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STGW10M65DF2 belongs to ST's M-series IGBT portfolio, engineered specifically for 650 V inverter applications demanding optimal trade-offs between conduction loss, switching speed, and short-circuit ruggedness in motor drives and power conversion systems.

FAQ

What is the maximum gate-emitter voltage rating for STGW10M65DF2?

The absolute maximum V_GE is ±20 V. Operation above +15 V or below –10 V risks gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and prevent spurious conduction during high dv/dt transients.

Does STGW10M65DF2 require an external freewheeling diode?

No. STGW10M65DF2 integrates a soft, fast-recovery antiparallel diode with t_rr = 96 ns and Q_rr = 373 nC at 25 °C. This eliminates the need for an external diode in standard inverter leg configurations, reducing PCB area and component count while maintaining low EMI.

How does the short-circuit withstand time vary with junction temperature?

t_sc decreases with rising T_J: it is 6 µs at T_Jstart = 150 °C and V_GE = 15 V, but drops to 10 µs at V_GE = 13 V under same conditions. At T_Jstart = 125 °C, t_sc extends further-critical for designing fault-clearing intervals in motor protection schemes.

Can STGW10M65DF2 be paralleled with other IGBTs without emitter resistors?

Yes-its positive V_CE(sat) temperature coefficient and tight parameter distribution enable stable current sharing in parallel configurations. However, matched gate drive layout (equal trace length/inductance) and symmetrical thermal mounting remain essential to avoid thermal runaway or current imbalance.

STGW10M65DF2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: M

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 20 A

Current - Collector Pulsed (Icm):: 40 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 10A

Power - Max:: 115 W

Switching Energy:: 120µJ (on), 270µJ (off)

Input Type:: Standard

Gate Charge:: 28 nC

Td (on/off) @ 25°C:: 19ns/91ns

Test Condition:: 400V, 10A, 22Ohm, 15V

Reverse Recovery Time (trr):: 96 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW10M65DF2 FAQ

1.How can I place an order for STGW10M65DF2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW10M65DF2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW10M65DF2 reliable?

The price and inventory of STGW10M65DF2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW10M65DF2 is usually 5 days.

3.What payment methods are accepted for STGW10M65DF2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW10M65DF2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW10M65DF2?

STGW10M65DF2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW10M65DF2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW10M65DF2?

For technical support, including STGW10M65DF2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW10M65DF2 requirements.

6.How does Aetrix verify that STGW10M65DF2 is sourced from the original manufacturer or authorized distributors?

All STGW10M65DF2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW10M65DF2 meets industry standards.

7.What is the process for return or replacement of STGW10M65DF2?

All STGW10M65DF2 units undergo pre-shipment inspection (PSI). If there is an issue with STGW10M65DF2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW10M65DF2 part is unused and in its original packaging.

Return procedure for STGW10M65DF2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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