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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW15H120DF2

Name: STGW15H120DF2
Brand: STMicroelectronics
SKU: STGW15H120DF2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW15H120DF2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW15H120DF2.pdf

Description:: IGBT H-SERIES 1200V 15A TO-247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW15H120DF2 from STMicroelectronics is a 1200 V, 15 A trench gate field-stop IGBT with integrated fast-recovery antiparallel diode in TO-247 package. It delivers V_CE(sat) = 2.1 V @ I_C = 15 A, 5 µs short-circuit withstand time at T_J = 150 °C, and R_thJC = 0.58 °C/W (IGBT), enabling high-efficiency operation in photovoltaic inverters and welding power stages.

For engineers reviewing the STGW15H120DF2 datasheet, STGW15H120DF2 pinout, STGW15H120DF2 application, or STGW15H120DF2 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, minimized tail current for reduced switching loss, and tight parameter distribution across temperature for stable high-frequency converter performance.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure optimized for high-switching-frequency converters. Its H-series design balances conduction and switching losses, achieving E_on = 0.38 mJ and E_off = 0.37 mJ at T_J = 25 °C under 600 V, 15 A, R_G = 10 Ω conditions.

The integrated diode features t_rr = 231 ns and Q_rr = 0.72 µC at T_J = 25 °C, with soft recovery characteristics confirmed by dI_rr/dt = 1200 A/µs and low Err = 0.4 mJ - critical for reducing voltage overshoot in hard-switched PFC and UPS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - supports DC bus voltages up to 1000 V in 3-phase PV inverters and industrial UPS systems
I_C (T_C = 100 °C)	15 A - continuous rated current at practical heatsink temperatures, defining thermal design margin
V_CE(sat)	2.1 V @ I_C = 15 A, T_J = 25 °C - low conduction loss enabling >98% efficiency in 10–50 kHz converters
t_sc	5 µs @ V_CE = 600 V, T_J = 150 °C - enables robust short-circuit protection without external desaturation detection circuitry
R_thJC (IGBT)	0.58 °C/W - allows 259 W total dissipation at T_C = 25 °C, supporting compact heatsink sizing
Q_g	67 nC - gate charge value directly determining driver power requirement and switching speed control
t_rr (diode)	231 ns @ I_F = 15 A, T_J = 25 °C - fast, soft recovery minimizes commutation stress on adjacent switches

Pinout & Package

TO-247 package with 3-pin configuration (Collector, Gate, Emitter) and isolated mounting flange. Standard lead form per Table 7 of DS9296 Rev 6: D = 20.0 mm, E = 15.6 mm, L = 14.5 mm, e = 5.45 mm.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab side)	Collector (C)	Main high-side current path; electrically connected to metal tab - requires isolation from heatsink unless system ground referenced
Pin 2	Gate (G)	Control input requiring 15 V drive; 67 nC total gate charge defines Miller plateau duration and driver peak current demand
Pin 3	Emitter (E)	Power return node; serves as reference for gate drive and current sensing; low-inductance layout essential for dV/dt immunity

Key Features

Feature	Design Value
Minimized tail current	Reduces turn-off energy (E_off = 0.37 mJ) and di/dt-induced voltage spikes during hard switching
Slightly positive V_CE(sat) tempco	Enables stable current sharing in parallel configurations without active current balancing circuits
Very fast recovery antiparallel diode	t_rr = 231 ns and soft recovery (dI_rr/dt = 1200 A/µs) suppresses ringing and EMI in bridge-leg commutation
5 µs short-circuit withstand time	Permits use with standard 1–2 µs desaturation blanking windows, simplifying protection circuit design
Low thermal resistance (0.58 °C/W)	Supports 259 W dissipation at T_C = 25 °C, enabling higher power density vs. comparable 1200 V IGBTs

Applications

Photovoltaic Inverters

Uninterruptible Power Supply

Use Scenario: Three-phase string inverters operating at 16–25 kHz switching frequency with 1000 V DC input.

IC Role / Device Role / Timing Role: High-side IGBT switch in NPC or T-type three-level topology, handling bidirectional power flow and reactive power control.

Use Value: Low V_CE(sat) and minimized tail current reduce conduction + switching losses, improving conversion efficiency from 97.8% to 98.3% at full load.

Use Scenario: Online double-conversion UPS with 6–12 kHz IGBT-based inverter stage delivering clean 50/60 Hz sine wave output.

IC Role / Device Role / Timing Role: Output stage switching device in full-bridge inverter, synchronized to grid phase for seamless transfer and harmonic suppression.

Use Value: 5 µs short-circuit rating allows reliable operation under sustained overload (125% for 10 s) without latch-up or secondary failure.

Welding Power Supplies

Power Factor Correction

Use Scenario: IGBT-based inverter welders operating in pulsed MIG or TIG mode with 10–30 kHz carrier frequency and high di/dt demands.

IC Role / Device Role / Timing Role: Primary switching element in resonant or hard-switched DC-link chopper, controlling arc voltage and current waveform shape.

Use Value: Tight parameter distribution and positive V_CE(sat) tempco ensure consistent arc stability across ambient temperatures from –20 °C to +60 °C.

Use Scenario: Active front-end (AFE) PFC stage in industrial motor drives, rectifying 400–690 V AC with >99% displacement factor.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC, operating at 20–50 kHz with zero-voltage switching assist.

Use Value: Fast diode recovery (t_rr = 231 ns) prevents reverse recovery-induced shoot-through in interleaved dual-boost configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN100N120B3	1200 V / 100 A, TO-247, higher current rating but larger die size; R_thJC = 0.35 °C/W, V_CE(sat) = 2.4 V @ 50 A	Targeted at higher-power (>15 kW) PFC and inverter stages where thermal headroom is critical	Select when system requires >30 A continuous current capability and can accommodate larger gate drive energy (Q_g = 125 nC)
Infineon IKW15N120T2	1200 V / 15 A, TO-247, TRENCHSTOP™ IGBT2; V_CE(sat) = 2.05 V @ 15 A but t_sc = 3 µs and no integrated diode	Requires external ultrafast diode (e.g., IDH15E120) for freewheeling paths, increasing BOM count and layout complexity	Prefer when cost sensitivity outweighs integration benefit and discrete diode selection allows optimization of recovery behavior

Compared with IXGN100N120B3, STGW15H120DF2 offers tighter parameter spread and integrated diode for simplified layout, while IKW15N120T2 trades integration for slightly lower V_CE(sat) but mandates external diode sourcing and thermal co-design.

Availability

STGW15H120DF2 is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supply systems, and industrial welding equipment requiring stable component supply, long-term lifecycle support, and traceable manufacturing origin.

Supply support for STGW15H120DF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGW15H120DF2 belongs to ST's H-series high-speed IGBT portfolio, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial motor control applications.

FAQ

What is the maximum gate-emitter voltage rating for STGW15H120DF2?

The absolute maximum V_GE is ±20 V for continuous operation, with transient rating of ±30 V for pulses ≤10 µs and duty cycle ≤0.01. Exceeding ±20 V continuously risks gate oxide degradation; recommended gate drive is +15 V / –8 V for optimal switching performance and reliability.

Does STGW15H120DF2 include an integrated diode, and what are its key recovery parameters?

Yes, it integrates a fast-recovery antiparallel diode characterized by t_rr = 231 ns, Q_rr = 0.72 µC, and Err = 0.4 mJ at T_J = 25 °C. At T_J = 175 °C, t_rr increases to 414 ns and Q_rr to 2.2 µC - values critical for snubberless design in 10–30 kHz converters.

How does the positive V_CE(sat) temperature coefficient improve system reliability?

The slight positive tempco (V_CE(sat) rises ~0.1 V from 25 °C to 175 °C at I_C = 15 A) ensures inherent current sharing when multiple STGW15H120DF2 devices operate in parallel, eliminating thermal runaway without external emitter resistors or active current balancing circuits.

What thermal resistance values define heatsink requirements for STGW15H120DF2?

R_thJC = 0.58 °C/W (IGBT) and 1.47 °C/W (diode) set the junction-to-case limit; R_thJA = 50 °C/W is only valid for PCB-mounted evaluation - actual system R_thCA must be ≤1.2 °C/W to maintain T_J ≤175 °C at 15 A continuous conduction with 259 W dissipation.

STGW15H120DF2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.6V @ 15V, 15A

Power - Max:: 259 W

Switching Energy:: 380µJ (on), 370µJ (off)

Input Type:: Standard

Gate Charge:: 67 nC

Td (on/off) @ 25°C:: 23ns/111ns

Test Condition:: 600V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr):: 231 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW15H120DF2 FAQ

1.How can I place an order for STGW15H120DF2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW15H120DF2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW15H120DF2 reliable?

The price and inventory of STGW15H120DF2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW15H120DF2 is usually 5 days.

3.What payment methods are accepted for STGW15H120DF2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW15H120DF2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW15H120DF2?

STGW15H120DF2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW15H120DF2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW15H120DF2?

For technical support, including STGW15H120DF2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW15H120DF2 requirements.

6.How does Aetrix verify that STGW15H120DF2 is sourced from the original manufacturer or authorized distributors?

All STGW15H120DF2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW15H120DF2 meets industry standards.

7.What is the process for return or replacement of STGW15H120DF2?

All STGW15H120DF2 units undergo pre-shipment inspection (PSI). If there is an issue with STGW15H120DF2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW15H120DF2 part is unused and in its original packaging.

Return procedure for STGW15H120DF2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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