STMicroelectronics STGW15M120DF3

Overview

STGW15M120DF3 from STMicroelectronics is a 1200 V, 15 A trench-gate field-stop IGBT with integrated soft fast-recovery antiparallel diode in TO-247 package. It delivers V_CE(sat) = 1.85 V (typ.) at I_C = 15 A and T_J = 25 °C, 6 μs short-circuit withstand time at T_J = 150 °C, and R_thJC = 0.58 °C/W (IGBT), enabling high-efficiency switching in high-voltage industrial inverters.

For engineers reviewing the STGW15M120DF3 datasheet, STGW15M120DF3 pinout, STGW15M120DF3 application, or STGW15M120DF3 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, tight parameter distribution, low thermal resistance, and diode reverse recovery performance (t_rr = 270 ns typ. at T_J = 25 °C).

Technical Context

This IGBT employs ST's M-series trench gate field-stop architecture optimized for balanced conduction loss and switching speed in 1200 V systems. Its design integrates a co-packaged diode with soft recovery (Q_rr = 0.96 µC typ., E_rr = 0.18 mJ typ. at 25 °C) to minimize voltage overshoot and EMI during turn-off.

The device features a gate threshold voltage V_GE(th) of 5–7 V, ±20 V gate-emitter rating, and operates up to T_J = 175 °C. Dynamic parameters-including t_d(on) = 26 ns, t_d(off) = 122 ns, and E_on/E_off = 0.55/0.85 mJ at 600 V-support high-frequency operation up to ~20 kHz in motor drives and solar inverters.

Key Specifications

Pinout & Package

STGW15M120DF3 uses a TO-247 package with 3 leads: Gate (G), Collector (C), and Emitter (E). The collector tab is electrically connected to lead 2 and serves as the main heat path. Mounting requires insulated hardware due to tab conductivity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IXGN150N120A3, STGW15M120DF3 offers integrated diode convenience and superior short-circuit ruggedness; versus IKW15N120CS6, it trades slightly higher V_CE(sat) for 2× longer t_sc, making it preferable in mission-critical UPS and industrial drive applications.

Availability

STGW15M120DF3 is available at Aetrix Electronics and suitable for industrial motor control, solar inverters, and uninterruptable power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STGW15M120DF3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STGW15M120DF3 belongs to ST's M-series IGBT portfolio, engineered specifically for high-efficiency, high-reliability 1200 V inverter systems where low conduction loss, short-circuit robustness, and safe paralleling are mandatory.

FAQ

What is the maximum gate-emitter voltage rating for STGW15M120DF3?

The absolute maximum gate-emitter voltage is ±20 V, as specified in Table 1 of DS10299 Rev 3. Exceeding this rating risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and prevent spurious conduction.

Does STGW15M120DF3 include an integrated diode, and what are its key recovery characteristics?

Yes, it integrates a soft fast-recovery antiparallel diode. At T_J = 25 °C, typical reverse recovery time (t_rr) is 270 ns, Q_rr is 0.96 µC, and E_rr is 0.18 mJ under I_F = 15 A, dI/dt = 1000 A/μs conditions. These values increase at elevated temperature (e.g., t_rr = 534 ns at T_J = 175 °C), confirming soft recovery behavior.

How does the positive V_CE(sat) temperature coefficient improve system reliability?

The positive coefficient means V_CE(sat) increases with junction temperature, causing current to naturally redistribute away from hotter devices in parallel configurations. This passive self-balancing eliminates need for matched gate resistors or current-sense feedback loops, reducing design complexity and failure modes in high-power inverters.

What thermal resistance value should be used for heatsink sizing calculations?

Use R_thJC = 0.58 °C/W for the IGBT section and R_thJC = 1.3 °C/W for the diode section (Table 2). These junction-to-case values are measured under standard mounting conditions (flat, greased surface, 1.5 N·m torque); actual system R_thJA depends on heatsink geometry, airflow, and interface materials.