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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW20H65FB

Name: STGW20H65FB
Brand: STMicroelectronics
SKU: STGW20H65FB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW20H65FB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW20H65FB.pdf

Description:: IGBT 650V 40A 168W TO247

Quantity:: RFQ Add To RFQ list

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Inventory:7,849

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Product details

Overview

STGW20H65FB from STMicroelectronics is a 650 V, 20 A trench gate field-stop IGBT in the high-speed HB series, optimized for photovoltaic inverters and high-frequency converters. It delivers V_CE(sat) = 1.55 V (typ.) at I_C = 20 A, T_J = 25 °C; t_d(off) = 139 ns; E_off = 170 µJ; R_thJC = 0.9 °C/W (TO-247); and operates up to T_J = 175 °C.

For engineers reviewing the STGW20H65FB datasheet, STGW20H65FB pinout, STGW20H65FB application, or STGW20H65FB equivalent, this device is selected for high-efficiency power conversion where low conduction loss, minimized tail current, tight parameter distribution, safe paralleling capability, and thermal robustness are critical in industrial switching topologies.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction and switching losses across 1–100 kHz operation. Its slightly positive V_CE(sat) temperature coefficient enables stable current sharing in parallel configurations without external current-balancing resistors.

The device is characterized for inductive load switching with V_CC = 400 V, I_C = 20 A, R_G = 10 Ω, and V_GE = 15 V. Dynamic parameters-including Q_g = 120 nC, C_ies = 2764 pF, and E_ts = 247 µJ at T_J = 25 °C-are specified under standardized test circuits per Figure 25 and Figure 26 of DS10546.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Withstands DC bus voltages up to 650 V in boost, inverter, and PFC stages without breakdown.
I_C (T_C = 100 °C)	20 A - Sustains continuous 20 A collector current at case temperature of 100 °C, enabling compact heatsink design.
V_CE(sat)	1.55 V (typ.) @ I_C = 20 A, T_J = 25 °C - Low saturation voltage reduces conduction loss and improves system efficiency at rated load.
E_off	170 µJ @ T_J = 25 °C - Low turn-off energy minimizes switching loss during high-frequency operation in solar inverters.
R_thJC	0.9 °C/W - Enables efficient heat transfer from junction to case in TO-247 package, supporting high-power density layouts.
Q_g	120 nC - Gate charge value informs gate driver sizing; supports fast, controlled switching with moderate drive strength.
t_d(off)	139 ns - Short turn-off delay time allows precise timing control in PWM-based converters operating above 20 kHz.

Pinout & Package

STGW20H65FB is housed in a TO-247 package with isolated tab (collector-connected), offering low thermal resistance and mechanical robustness for industrial mounting. The package features three terminals: Gate (G), Collector (C), and Emitter (E), with the metal tab electrically tied to the collector.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control input	Receives 15 V gate drive signal; requires ≤ ±20 V rating and 120 nC total charge for full enhancement.
C (Pin 2 + Tab)	High-side power output node	Collector terminal connected to metal tab; must be electrically isolated from heatsink unless floating topology is used.
E (Pin 3)	Emitter return path	Serves as reference for gate drive and current sensing; low-inductance layout critical for dV/dt immunity.

Key Features

Feature	Design Value
Minimized tail current	Reduces turn-off energy (E_off = 170 µJ) and di/dt-induced voltage spikes in hard-switched converters.
Tight parameter distribution	Ensures consistent V_CE(sat), t_d(on), and E_off across production lots-critical for parallel IGBT reliability.
Slightly positive V_CE(sat) tempco	Enables inherent current balancing in paralleled units without external emitter resistors or active control.
High-speed switching series	Optimized for 20–100 kHz operation with t_d(on) = 30 ns and t_f = 20 ns, supporting high-frequency PFC and inverter stages.

Applications

Photovoltaic Inverters

Power Factor Correction

Use Scenario: DC-to-AC inversion stage in string and central solar inverters operating at 16–50 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side switch in three-phase NPC or T-type inverter leg, handling 20 A RMS output current at 650 V DC bus.

Use Value: Low V_CE(sat) and minimized tail current reduce thermal stress and improve conversion efficiency >98.5% at full load.

Use Scenario: Boost PFC stage in industrial SMPS and UPS systems requiring >99% input power factor at 3–20 kW.

IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) boost converter, switching at 30–100 kHz.

Use Value: Tight parameter distribution ensures stable current sharing across multiple parallel modules, reducing system derating.

Welding Equipment

High-Frequency Converters

Use Scenario: Inverter-based arc welding power supplies delivering pulsed 40 A output with rapid duty-cycle modulation.

IC Role / Device Role / Timing Role: Primary switching device in resonant or hard-switched inverter bridge driving high-current transformer primary.

Use Value: Safe paralleling capability allows scalable current output without complex current-sensing feedback loops.

Use Scenario: Isolated DC-DC converters in EV chargers and telecom rectifiers operating at 50–100 kHz with 400–800 V input.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge or LLC resonant topology, handling 20 A peak current.

Use Value: R_thJC = 0.9 °C/W and T_J(max) = 175 °C support sustained operation under transient overload conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGWT20H65FB	Same die, TO-3P package; R_thJC = 0.9 °C/W but larger footprint and higher mounting torque requirement.	Better suited for bolt-down heatsink integration in legacy industrial drives where TO-3P mechanical compatibility is required.	Select when mechanical form factor or existing PCB footprint mandates TO-3P over TO-247.
STGFW20H65FB	Same die, TO-3PF package; R_thJC = 1.73 °C/W; lower current rating (20 A @ T_C = 100 °C) due to reduced thermal performance.	Targeted at cost-sensitive, space-constrained applications like compact PV microinverters where isolation voltage (3.5 kV_RMS) is prioritized.	Select when reinforced insulation (3.5 kV_RMS) and smaller outline are needed, accepting higher thermal resistance.

Compared with STGWT20H65FB and STGFW20H65FB, STGW20H65FB offers optimal thermal performance (R_thJC = 0.9 °C/W) and industry-standard TO-247 mountability, making it the preferred choice for new designs demanding high power density and ease of heatsink integration.

Availability

STGW20H65FB is available at Aetrix Electronics and suitable for photovoltaic inverters, power factor correction systems, and high-frequency converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STGW20H65FB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for industrial, automotive, and consumer markets.

STGW20H65FB belongs to the HB series of high-speed IGBTs engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial motor control applications.

FAQ

What is the maximum recommended gate-emitter voltage for STGW20H65FB?

The absolute maximum V_GE is ±20 V per datasheet Table 1. Operation beyond ±15 V risks gate oxide degradation, while drive below ±12 V may cause incomplete turn-on and increased conduction loss. Recommended gate drive is +15 V / –5 V to ensure robust switching and noise immunity.

Can STGW20H65FB be safely paralleled with identical units?

Yes-its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% on V_CE(sat) and E_off) enable stable current sharing without external emitter resistors. Layout symmetry and matched gate drive paths are required to maintain balance under dynamic load conditions.

What is the insulated creepage distance for the TO-247 package?

The TO-247 package provides 3.5 mm minimum creepage and clearance between all leads and the isolated collector tab, meeting IEC 60664-1 requirements for reinforced insulation at 3.5 kV_RMS (1 s). This supports use in Class II isolated systems without additional potting or barriers.

How does junction temperature affect switching energy in STGW20H65FB?

At T_J = 175 °C, E_off increases to 353 µJ (Table 5), a 108% rise versus 25 °C. E_on rises to 88 µJ (+14%). This reflects increased carrier lifetime and tail current at elevated temperature-designers must derate switching frequency or increase heatsink capacity accordingly.

STGW20H65FB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 20A

Power - Max:: 168 W

Switching Energy:: 77µJ (on), 170µJ (off)

Input Type:: Standard

Gate Charge:: 120 nC

Td (on/off) @ 25°C:: 30ns/139ns

Test Condition:: 400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW20H65FB FAQ

1.How can I place an order for STGW20H65FB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW20H65FB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW20H65FB reliable?

The price and inventory of STGW20H65FB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW20H65FB is usually 5 days.

3.What payment methods are accepted for STGW20H65FB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW20H65FB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW20H65FB?

STGW20H65FB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW20H65FB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW20H65FB?

For technical support, including STGW20H65FB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW20H65FB requirements.

6.How does Aetrix verify that STGW20H65FB is sourced from the original manufacturer or authorized distributors?

All STGW20H65FB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW20H65FB meets industry standards.

7.What is the process for return or replacement of STGW20H65FB?

All STGW20H65FB units undergo pre-shipment inspection (PSI). If there is an issue with STGW20H65FB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW20H65FB part is unused and in its original packaging.

Return procedure for STGW20H65FB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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