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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW20IH125DF

Name: STGW20IH125DF
Brand: STMicroelectronics
SKU: STGW20IH125DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW20IH125DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW20IH125DF.pdf

Description:: IGBT 1250V 40A 259W TO-247

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Product details

Overview

STGW20IH125DF from STMicroelectronics is a 1250 V, 20 A trench gate field-stop IGBT with co-packaged soft-recovery freewheeling diode in TO-247 package, optimized for resonant and soft-switching topologies. It delivers V_CE(sat) = 2.0 V (typ.) at I_C = 15 A, T_J = 25 °C, R_thJC = 0.58 °C/W (IGBT), and operates up to T_J = 175 °C - enabling high-efficiency induction heating and microwave oven power stages.

For engineers reviewing the STGW20IH125DF datasheet, STGW20IH125DF pinout, STGW20IH125DF application, or STGW20IH125DF equivalent, key selection criteria include soft commutation capability, tight parameter distribution for paralleling, low tail current, co-packaged diode VF ≤ 1.5 V, and thermal resistance validated under pulsed and continuous conduction modes.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to simultaneously minimize conduction loss (V_CE(sat) = 2.0–2.55 V across 15–30 A) and switching loss (E_off = 410–820 μJ at 600 V/15 A, TJ = 25–175 °C). Its internal schematic integrates a low-VF soft-recovery diode (VF = 1.1–1.5 V at I_F = 15 A) with matched thermal characteristics.

The device is rated for V_CES = 1250 V, I_C = 20 A (T_C = 100 °C), and supports safe paralleling via tight parameter distribution and minimized tail current. Gate drive requires ±20 V V_GE, with V_GE(th) = 5–7 V and Q_g = 69 nC (typ.), enabling robust control in hard- and soft-switched resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1250 V - withstands DC bus voltages up to 900 V in resonant half/full-bridge designs with margin
I_C (T_C = 100 °C)	20 A - continuous collector current rating at practical heatsink temperature
V_CE(sat) (I_C = 15 A, T_J = 25 °C)	2.0 V (typ.) - enables <1.5 W conduction loss per device at 15 A, reducing heatsink size
E_off (600 V, 15 A, T_J = 25 °C)	410 μJ - low turn-off energy supports >100 kHz operation in LLC and phase-shifted full-bridge converters
R_thJC (IGBT)	0.58 °C/W - allows 142 W max power dissipation at ΔT = 83 °C (T_J = 175 °C, T_C = 92 °C)
Q_g	69 nC (typ.) - defines gate drive power requirement (~1 mW/MHz at 15 V swing) and RG sensitivity
Diode V_F (I_F = 15 A)	1.1–1.5 V - low forward drop minimizes freewheeling loss and improves ZVS initiation

Pinout & Package

STGW20IH125DF uses a TO-247 package with isolated tab (pin 2), where the metal tab is electrically connected to the collector (C). The package complies with ECOPACK® environmental standards and features standardized mechanical dimensions (D = 20.0 mm, E = 15.6 mm, L = 14.5 mm).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal requiring 15 V nominal drive; threshold voltage 5–7 V ensures noise immunity in noisy power environments
Pin 2 (TAB / C)	Collector (case-connected)	High-side switching node; tab must be electrically isolated from heatsink unless referenced to system ground
Pin 3 (E)	Emitter	Return path for IGBT and diode; shared emitter node enables single-shunt current sensing in half-bridge configurations

Key Features

Feature	Design Value
Soft commutation optimization	Minimized tail current and controlled dV/dt reduce EMI and snubber stress in zero-voltage switching circuits
Tight parameter distribution	Ensures uniform current sharing when paralleling multiple devices without external balancing resistors
Co-packaged soft-recovery diode	VF = 1.1–1.5 V with low reverse recovery charge (Q_rr) - eliminates need for discrete ultrafast diode in resonant tank paths
175 °C maximum junction temperature	Enables higher power density and extended lifetime in thermally constrained induction heating modules
Low R_thJC (0.58 °C/W)	Reduces thermal bottleneck between die and heatsink, improving reliability under transient overload conditions

Applications

Induction Heating Systems

Microwave Oven Inverters

Use Scenario: High-frequency (20–100 kHz) series-resonant inverter driving copper coil loads for cooktop surface heating.

IC Role / Device Role / Timing Role: Main switching device in half-bridge topology; handles bidirectional current during ZVS transitions.

Use Value: Low tail current and soft diode recovery enable stable zero-voltage switching across full load range, reducing MOSFET replacement cost and improving efficiency >92%.

Use Scenario: 2.45 GHz magnetron power supply using asymmetrical half-bridge with variable frequency control.

IC Role / Device Role / Timing Role: High-side switch in inverter stage; conducts during resonant energy transfer and freewheels via integrated diode.

Use Value: 1250 V rating accommodates reflected voltage spikes from transformer leakage inductance; 175 °C T_J rating sustains intermittent 3-minute cooking cycles without derating.

Resonant LLC Converters

Industrial Plasma Generators

Use Scenario: 1 kW telecom rectifier with LLC resonant tank operating at 300–500 kHz for high-density AC/DC conversion.

IC Role / Device Role / Timing Role: Primary-side switch managing both hard- and soft-switched transitions depending on load and frequency modulation.

Use Value: Tight V_CE(sat) distribution (±0.3 V) ensures predictable conduction loss across production batches, simplifying thermal design validation.

Use Scenario: Medium-frequency (50–200 kHz) plasma ignition and sustain circuit for semiconductor process chambers.

IC Role / Device Role / Timing Role: Switching element in series-resonant driver delivering pulsed high-voltage arcs to electrode pairs.

Use Value: Safe paralleling capability allows scalable power delivery up to 5 kW using identical STGW20IH125DF units, avoiding mixed-part qualification overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-based resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN20N120B3	1200 V rating, higher V_CE(sat) = 2.4 V (typ.), R_thJC = 0.65 °C/W, no co-packaged diode	Requires external ultrafast diode; less suitable for compact induction heater PCB layouts	Select when diode independence or legacy layout compatibility is prioritized over integration and thermal performance
Infineon IKP20N120T2	1200 V rating, lower E_off = 320 μJ but higher V_CE(sat) = 2.35 V (typ.), TO-247-3L package with insulated tab	Better high-frequency switching but reduced conduction efficiency at >10 A; not qualified for soft-commutation focus	Select for higher-frequency (>200 kHz) resonant converters where turn-off loss dominates total loss budget

Compared with IXGN20N120B3 and IKP20N120T2, STGW20IH125DF uniquely combines 1250 V rating, integrated soft diode, and industry-leading V_CE(sat)/E_off balance - making it optimal for thermally constrained, high-reliability resonant systems demanding minimal external components.

Availability

STGW20IH125DF is available at Aetrix Electronics and suitable for induction heating systems, microwave oven inverters, and resonant LLC converters requiring stable component supply, long-lifecycle support, and consistent parametric performance across production lots.

Supply support for STGW20IH125DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

This device belongs to ST's IH-series trench gate field-stop IGBT family, engineered specifically for soft-switching and resonant converter applications where low tail current, tight parameter spread, and integrated diode performance are critical to system efficiency and reliability.

FAQ

Is STGW20IH125DF suitable for hard-switching applications?

No - the datasheet explicitly states it is "designed for soft commutation only." Its optimized tail current profile and diode characteristics are tuned for ZVS/ZCS operation; hard-switching increases E_off and thermal stress beyond rated limits, risking premature failure.

What is the maximum recommended gate resistor value for reliable turn-off?

Based on Figure 20 and Table 6, RG ≤ 22 Ω is recommended for T_J ≤ 125 °C operation. At RG = 30 Ω, t_d(off) exceeds 150 ns and E_off rises >30% - increasing switching loss and risk of shoot-through in bridge configurations.

Does the TO-247 package have an electrically isolated tab?

No - Pin 2 (TAB) is internally connected to the collector (C), as confirmed by Figure 1 and Table 1. Electrical isolation from the heatsink must be implemented externally using insulating washers or ceramic pads to prevent short-circuiting the collector node.

Can STGW20IH125DF be paralleled with STGWT20IH125DF?

No - although both share identical die and electrical specs, STGWT20IH125DF uses TO-3P packaging with different thermal and mechanical mounting constraints. Paralleling across packages introduces thermal imbalance and current-sharing instability due to mismatched R_thJC and layout parasitics.

STGW20IH125DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1250 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 15A

Power - Max:: 259 W

Switching Energy:: 410µJ (off)

Input Type:: Standard

Gate Charge:: 68 nC

Td (on/off) @ 25°C:: -/106ns

Test Condition:: 600V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STGW20IH125DF FAQ

1.How can I place an order for STGW20IH125DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW20IH125DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW20IH125DF reliable?

The price and inventory of STGW20IH125DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW20IH125DF is usually 5 days.

3.What payment methods are accepted for STGW20IH125DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW20IH125DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW20IH125DF?

STGW20IH125DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW20IH125DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW20IH125DF?

For technical support, including STGW20IH125DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW20IH125DF requirements.

6.How does Aetrix verify that STGW20IH125DF is sourced from the original manufacturer or authorized distributors?

All STGW20IH125DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW20IH125DF meets industry standards.

7.What is the process for return or replacement of STGW20IH125DF?

All STGW20IH125DF units undergo pre-shipment inspection (PSI). If there is an issue with STGW20IH125DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW20IH125DF part is unused and in its original packaging.

Return procedure for STGW20IH125DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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