Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW20NC60VD

Name: STGW20NC60VD
Brand: STMicroelectronics
SKU: STGW20NC60VD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGW20NC60VD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW20NC60VD.pdf

Description:: IGBT 600V 60A 200W TO247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:89

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGW20NC60VD from STMicroelectronics is a 600 V, 30 A (T_C = 100 °C) very fast IGBT with integrated ultra-soft antiparallel diode, designed for high-frequency switching in hard-switched and resonant topologies. It delivers V_CE(sat) = 1.8 V at 20 A/25 °C, t_rr = 44 ns (T_j = 25 °C), and E_off = 330 µJ under standard test conditions, enabling efficient operation in UPS inverters and motor drives.

For engineers reviewing the STGW20NC60VD datasheet, STGW20NC60VD pinout, STGW20NC60VD application, or STGW20NC60VD equivalent, key selection criteria include its 600 V blocking voltage, 30 A continuous current rating at 100 °C case temperature, soft-recovery diode performance, TO-247 package thermal resistance (R_thj-case = 0.63 °C/W), and gate charge profile optimized for 50 kHz operation.

Technical Context

This IGBT employs ST's Power MESH™ process to balance low conduction loss and fast switching. Its internal structure integrates a co-packaged ultra-fast soft-recovery diode with t_rr = 44 ns (25 °C) and Q_rr = 66 nC, minimizing voltage overshoot and EMI during turn-off.

The device operates with V_GE(th) = 3.75–5.75 V and g_fs = 15 S, supporting robust gate drive design. Switching behavior is characterized by t_d(off) = 100 ns and t_f = 75 ns at 25 °C, scaling predictably to t_d(off) = 150 ns and t_f = 130 ns at 125 °C, ensuring stable performance across industrial temperature ranges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - supports DC bus voltages up to 400 V nominal with 50 % safety margin in industrial SMPS and PFC stages
I_C (T_C = 100 °C)	30 A - defines maximum continuous output current in thermally constrained motor drive heatsink designs
V_CE(sat)	1.8 V @ 20 A, 25 °C - determines conduction loss of 36 W at full load, critical for thermal management in compact inverters
t_rr (diode)	44 ns @ T_j = 25 °C - enables clean commutation with minimal tail current, reducing cross-conduction risk in bridge legs
E_off	330 µJ @ 390 V, 20 A - quantifies energy dissipated during turn-off, directly impacting thermal design at 50 kHz switching
R_thj-case	0.63 °C/W - allows junction-to-case temperature rise of 19 °C at 30 W dissipation, enabling direct mounting on aluminum heatsinks
Q_g	100 nC - sets minimum gate driver peak current requirement (~30 mA average at 50 kHz) for reliable switching

Pinout & Package

STGW20NC60VD uses a 3-pin TO-247 package with isolated tab (collector-connected). The case serves as the collector terminal, providing low-inductance power path and direct thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Case Tab)	Main power output / heat sink interface	Electrically connected to package tab; requires insulated mounting in non-ground-referenced topologies
Emitter	Power return path / reference node for gate drive	Serves as common source for gate driver supply and current sensing; low-inductance layout essential for dV/dt immunity
Gate	Control input for IGBT channel	High-impedance MOS-controlled terminal; requires <10 Ω series gate resistor to damp oscillation and control dv/dt

Key Features

Feature	Design Value
Power MESH™ IGBT die	Optimizes R_on × Q_g trade-off, enabling 600 V devices with <2 V saturation voltage and <120 nC total gate charge
Ultra-soft antiparallel diode	Soft recovery (I_rrm/di/dt < 0.05 A/ns) reduces voltage spikes and EMI in bridge configurations
High-frequency capability	Validated operation up to 50 kHz in hard-switched PFC and inverter stages per ST application note AN2327
Thermal robustness	Rated for T_j = –55 to 150 °C with R_thj-case = 0.63 °C/W, supporting derating curves for 10-year field life
ECOPACK® compliance	Meets RoHS and halogen-free requirements per ST specification ECOPACK2, verified in Rev 5 datasheet (Mar 2010)

Applications

UPS Inverters

Industrial Motor Drives

Use Scenario: 3 kVA online double-conversion UPS with 50 kHz IGBT-based DC/AC stage.

IC Role / Device Role / Timing Role: Main switching device in full-bridge inverter leg, handling 30 A RMS output current with sinusoidal PWM.

Use Value: Soft diode recovery minimizes shoot-through risk during dead-time transitions, improving reliability over discrete diode solutions.

Use Scenario: 2.2 kW variable-frequency drive for HVAC compressors using space-vector modulation.

IC Role / Device Role / Timing Role: High-side and low-side switch in three-phase inverter output stage, operating at 8 kHz fundamental with 50 kHz carrier.

Use Value: 30 A continuous rating at 100 °C case temperature enables compact heatsink design without forced air cooling.

Resonant SMPS

PFC Front-Ends

Use Scenario: 1.5 kW LLC resonant converter for telecom rectifiers with ZVS operation.

IC Role / Device Role / Timing Role: Primary-side switch controlling resonant tank current; conducts bidirectionally via integrated diode during half-cycle.

Use Value: Low Q_rr (66 nC) and soft recovery reduce circulating losses and improve ZVS margin at light loads.

Use Scenario: Active boost PFC stage in 3.5 kW server PSU operating in continuous conduction mode.

IC Role / Device Role / Timing Role: Boost switch handling 20 A peak inductor current at 100 kHz switching frequency.

Use Value: 600 V V_CES rating accommodates 400 V DC bus with transient margin, while low V_CE(sat) cuts conduction losses by 18 % vs. comparable 650 V IGBTs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN20N60B3	Higher V_CE(sat) (2.2 V), lower Q_g (75 nC), no integrated diode	Requires external ultra-fast diode; better suited for ZVS-resonant circuits where diode softness is less critical	Select when gate drive power budget is tight and external diode layout is acceptable
Infineon IKW20N60T	Lower V_CE(sat) (1.6 V), higher t_rr (120 ns), TRENCHSTOP™ technology	Diode recovery is harder; may require snubbers in hard-switched bridges but offers lower conduction loss	Select when conduction loss dominates thermal design and EMI filtering can be added

Compared with IXGN20N60B3 and IKW20N60T, STGW20NC60VD uniquely combines integrated soft-recovery diode, 1.8 V V_CE(sat), and TO-247 thermal performance-making it optimal for cost-sensitive, space-constrained hard-switched inverters where diode commutation integrity is critical.

Availability

STGW20NC60VD is available at Aetrix Electronics and suitable for UPS inverters, industrial motor drives, and resonant SMPS requiring stable component supply and long-term industrial lifecycle support.

Supply support for STGW20NC60VD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's Power MESH™ IGBT product line, engineered specifically for high-efficiency, high-frequency power conversion in industrial motor controls, UPS systems, and switched-mode power supplies.

FAQ

What is the maximum recommended gate resistor value for STGW20NC60VD in 50 kHz operation?

A 3.3 Ω gate resistor is specified in the datasheet for all switching characterization tests at 50 kHz. Using >5 Ω increases t_d(off) and E_off disproportionately due to slower Miller plateau discharge, risking thermal runaway at high frequency. ST recommends 2.2–3.3 Ω for optimal dv/dt control and loss balance.

Can STGW20NC60VD replace STGW30NC60WD in an existing design?

No-STGW30NC60WD has 30 A continuous rating at T_C = 25 °C (vs. 60 A for STGW20NC60VD), but only 20 A at T_C = 100 °C. STGW20NC60VD offers identical voltage rating and superior diode softness (t_rr = 44 ns vs. 60 ns), but its lower current rating requires thermal re-evaluation if substituting into a 30 A design.

Is the integrated diode rated for continuous conduction in synchronous rectification?

No-the diode is rated for IF = 30 A RMS at T_C = 25 °C and IFSM = 120 A for 10 ms, but lacks reverse recovery ruggedness for sustained synchronous rectification. It is optimized for complementary switching in bridge legs, not unidirectional freewheeling. External Schottky or SiC diodes are required for true SR applications.

Does STGW20NC60VD support 175 °C maximum junction temperature operation?

No-the absolute maximum T_j is 150 °C per Table 2. Operation beyond this violates SOA limits and accelerates parameter drift (e.g., V_CE(sat) increases 0.5 %/°C above 125 °C). Derating curves in Figure 15 confirm safe operation only up to 150 °C with appropriate thermal design.

STGW20NC60VD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 20A

Power - Max:: 200 W

Switching Energy:: 220µJ (on), 330µJ (off)

Input Type:: Standard

Gate Charge:: 100 nC

Td (on/off) @ 25°C:: 31ns/100ns

Test Condition:: 390V, 20A, 3.3Ohm, 15V

Reverse Recovery Time (trr):: 44 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW20NC60VD FAQ

1.How can I place an order for STGW20NC60VD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW20NC60VD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW20NC60VD reliable?

The price and inventory of STGW20NC60VD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW20NC60VD is usually 5 days.

3.What payment methods are accepted for STGW20NC60VD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW20NC60VD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW20NC60VD?

STGW20NC60VD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW20NC60VD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW20NC60VD?

For technical support, including STGW20NC60VD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW20NC60VD requirements.

6.How does Aetrix verify that STGW20NC60VD is sourced from the original manufacturer or authorized distributors?

All STGW20NC60VD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW20NC60VD meets industry standards.

7.What is the process for return or replacement of STGW20NC60VD?

All STGW20NC60VD units undergo pre-shipment inspection (PSI). If there is an issue with STGW20NC60VD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW20NC60VD part is unused and in its original packaging.

Return procedure for STGW20NC60VD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…