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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW20V60F

Name: STGW20V60F
Brand: STMicroelectronics
SKU: STGW20V60F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW20V60F

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW20V60F.pdf

Description:: IGBT 600V 40A 167W TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW20V60F from STMicroelectronics is a 600 V, 20 A trench gate field-stop IGBT in TO-247 package, optimized for very high frequency converters with tail-less switching off, V_CE(sat) = 1.8 V (typ.) at I_C = 20 A and T_J = 25 °C, positive V_CE(sat) temperature coefficient, and R_thJC = 0.90 °C/W - deployed in photovoltaic inverters and welding equipment.

For engineers reviewing the STGW20V60F datasheet, STGW20V60F pinout, STGW20V60F application, or STGW20V60F equivalent, key selection criteria include switching energy (E_on = 200 µJ, E_off = 130 µJ @ T_J = 25 °C), safe paralleling capability, thermal resistance, and SOA robustness under pulsed inductive loads.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction loss (low V_CE(sat)) and switching loss (fast t_d(off) = 149 ns, t_f = 15 ns) while maintaining tight parameter distribution across production lots. Its positive V_CE(sat) temperature coefficient enables stable current sharing during parallel operation without external current-balancing resistors.

The device targets high-efficiency power conversion above 20 kHz, supported by low C_res = 64 pF and Q_gc = 50 nC, enabling reduced gate drive losses and improved dv/dt immunity. It integrates no co-packaged diode - unlike STGW20V60DF - and requires external freewheeling diode selection per application requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - maximum blocking voltage before avalanche; supports 400 V DC bus designs with 50 % safety margin.
I_C (T_C = 100 °C)	20 A - continuous collector current derated for thermal management in compact heatsink layouts.
V_CE(sat) (I_C = 20 A, T_J = 25 °C)	1.8 V (typ.) - low conduction loss enabling <1.5 W static dissipation at full rated current.
E_off (T_J = 25 °C)	130 µJ - minimized turn-off energy reduces heat generation in high-frequency PWM stages.
R_thJC	0.90 °C/W - enables efficient junction-to-case thermal transfer using standard TO-247 mounting practices.
Q_g	116 nC - total gate charge determines required gate driver peak current (≥11.6 A for 10 ns rise time).
t_d(off)	149 ns - short turn-off delay supports >100 kHz switching with precise timing control.

Pinout & Package

STGW20V60F uses the TO-247 package with isolated tab (collector-connected), offering mechanical robustness and thermal performance suitable for industrial power modules. The three-terminal configuration supports standard high-side or low-side switch placement in half-bridge topologies.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate	Control terminal requiring ±20 V absolute max gate-emitter voltage; drives IGBT via low-impedance path to minimize switching losses.
C (Pin 2 + Tab)	Collector	Main high-side power terminal; electrically connected to metal tab for direct heatsink mounting and low-inductance current return path.
E (Pin 3)	Emitter	Reference node for gate drive and current sensing; must be routed with minimal loop inductance to suppress voltage spikes during switching.

Key Features

Feature	Design Value
Tail-less switching off	Eliminates current tail during turn-off, reducing E_off by ~30 % vs conventional IGBTs and enabling cleaner zero-voltage switching transitions.
Positive V_CE(sat) temperature coefficient	Ensures inherent current balancing in parallel configurations without external emitter resistors or active current-sharing circuits.
Tight parameter distribution	±5 % V_CE(sat) variation across lot ensures predictable thermal and dynamic behavior in multi-device systems.
Maximum T_J = 175 °C	Enables operation in high-ambient environments (e.g., enclosed PV inverters) without derating beyond datasheet limits.
Safe operating area (SOA) rated for single-pulse t_p = 1 ms	Supports surge current handling up to 80 A without destructive failure - critical for welding and UPS overload conditions.

Applications

Photovoltaic Inverters

Uninterruptible Power Supply (UPS)

Use Scenario: DC–AC inversion stage in string or central solar inverters operating at 16–50 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side IGBT in three-phase inverter bridge, switching 600 V DC bus with 20 A RMS output current.

Use Value: Low E_ts = 330 µJ and tail-less turn-off reduce thermal stress on heatsink, improving system efficiency >98.5 % at 30 kW.

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz AC output during grid outage.

IC Role / Device Role / Timing Role: Inverter-stage IGBT handling bidirectional power flow between battery bank and AC output with fast transient response.

Use Value: 175 °C T_J rating and SOA robustness support 150 % overload for 60 s without derating - meeting UL 1778 hold-time requirements.

Welding Equipment

Power Factor Correction (PFC)

Use Scenario: Primary-side switch in IGBT-based inverter welders generating 10–30 kHz square-wave output for arc stability.

IC Role / Device Role / Timing Role: Main switching device in resonant or hard-switched DC–DC stage feeding inverter output transformer.

Use Value: 80 A pulsed current rating and 149 ns t_d(off) enable precise arc current regulation with <5 µs timing resolution.

Use Scenario: Boost switch in three-phase active PFC front-end for industrial motor drives and rectifier systems.

IC Role / Device Role / Timing Role: High-voltage switching element controlling inductor current in continuous conduction mode (CCM) at 20–30 kHz.

Use Value: Tight V_CE(sat) distribution ensures uniform current sharing across parallel PFC legs, maintaining THD <3 % at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30V60F	Higher I_C rating (30 A), same V_CES, slightly higher E_off (160 µJ), R_thJC = 0.75 °C/W.	Better suited for 30–40 kW systems where thermal headroom is constrained; requires larger gate driver due to Q_g = 155 nC.	Select when system peak current exceeds 20 A but layout allows same TO-247 footprint and enhanced thermal interface.
IXYS IXGN50N60B4	600 V / 50 A, faster t_f = 12 ns, higher Q_g = 190 nC, R_thJC = 0.55 °C/W, co-packaged diode included.	Designed for ultra-high-speed ZVS/ZCS topologies; not drop-in due to different pinout (G-C-E vs G-E-C) and integrated diode.	Choose only if redesign accommodates revised gate drive layout and leverages integrated diode for reduced BOM count.

Compared with STGW20V60F, STGW30V60F offers higher current capacity with marginal switching penalty, while IXGN50N60B4 trades gate drive complexity and pinout compatibility for superior speed and integrated functionality - neither is pin- or thermally identical without board-level adaptation.

Availability

STGW20V60F is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supply systems, and welding equipment requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for STGW20V60F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This IGBT belongs to ST's V-series trench gate field-stop portfolio, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial motor control applications.

FAQ

What is the maximum gate-emitter voltage rating for STGW20V60F?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller capacitance coupling during high dv/dt events.

Does STGW20V60F include an integrated freewheeling diode?

No. STGW20V60F is a standalone IGBT without co-packaged diode. Its companion part STGW20V60DF integrates a fast recovery diode, but STGW20V60F requires external diode selection based on reverse recovery Q_rr, softness factor, and thermal coupling requirements.

How does the TO-247 package affect thermal design compared to TO-3PF?

TO-247 offers lower R_thJC (0.90 °C/W vs 1.73 °C/W for TO-3PF), enabling ~45 % higher power dissipation at same case temperature. However, its smaller footprint demands higher thermal interface quality and tighter mounting torque control to avoid void formation under the tab.

Can STGW20V60F be safely paralleled without external emitter resistors?

Yes - due to its positive V_CE(sat) temperature coefficient and tight parameter distribution (±5 %), STGW20V60F supports stable current sharing in parallel configurations. However, matched gate drive impedance and symmetrical PCB layout remain essential to prevent dynamic current imbalance during switching transients.

STGW20V60F Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 2.2V @ 15V, 20A

Power - Max:: 167 W

Switching Energy:: 200µJ (on), 130µJ (off)

Input Type:: Standard

Gate Charge:: 116 nC

Td (on/off) @ 25°C:: 38ns/149ns

Test Condition:: 400V, 20A, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STGW20V60F FAQ

1.How can I place an order for STGW20V60F through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW20V60F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW20V60F reliable?

The price and inventory of STGW20V60F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW20V60F is usually 5 days.

3.What payment methods are accepted for STGW20V60F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW20V60F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW20V60F?

STGW20V60F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW20V60F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW20V60F?

For technical support, including STGW20V60F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW20V60F requirements.

6.How does Aetrix verify that STGW20V60F is sourced from the original manufacturer or authorized distributors?

All STGW20V60F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW20V60F meets industry standards.

7.What is the process for return or replacement of STGW20V60F?

All STGW20V60F units undergo pre-shipment inspection (PSI). If there is an issue with STGW20V60F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW20V60F part is unused and in its original packaging.

Return procedure for STGW20V60F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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