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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGW25H120F2

Name: STGW25H120F2
Brand: STMicroelectronics
SKU: STGW25H120F2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGW25H120F2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: STGW25H120F2.pdf

Description:: IGBT TRENCH FS 1200V 50A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGW25H120F2 from STMicroelectronics is a 1200 V, 25 A trench gate field-stop IGBT in the H-series optimized for high-frequency converters. It delivers V_CE(sat) = 2.1 V (typ.) at I_C = 25 A, 5 µs short-circuit withstand time at T_J = 150 °C, and R_thJC = 0.4 °C/W - enabling efficient photovoltaic inverters and UPS systems with safe paralleling capability.

For engineers reviewing the STGW25H120F2 datasheet, STGW25H120F2 pinout, STGW25H120F2 application, or STGW25H120F2 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient, tight parameter distribution for parallel operation, minimized tail current, and thermal robustness up to 175 °C junction temperature.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction and switching losses. Its dynamic characteristics - including t_d(on) = 29 ns, t_d(off) = 130 ns, and E_on/E_off = 0.6/0.7 mJ (T_J = 25 °C) - are calibrated for 600 V, 25 A inductive switching with 10 Ω gate resistance.

The device features a slightly positive V_CE(sat) temperature coefficient and low thermal resistance (0.4 °C/W), supporting stable current sharing in paralleled configurations. Its 1200 V V_CES rating and 100 A pulsed collector current enable use in high-voltage DC-link applications such as welding and PFC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - supports DC-link voltages up to 960 V in 3-level NPC inverters with margin
I_C (continuous, T_C = 100 °C)	25 A - defines maximum sustained output current under industrial heatsink conditions
V_CE(sat) (typ., 25 °C)	2.1 V - sets conduction loss baseline of ~52.5 W at 25 A, critical for thermal design
t_sc	5 µs - enables robust short-circuit protection without desaturation circuitry at T_J = 150 °C
R_thJC	0.4 °C/W - allows direct mounting to heatsinks with predictable junction-to-case thermal path
Q_g	100 nC - determines gate driver power requirement and switching speed control via R_G
E_ts (T_J = 25 °C)	1.3 mJ - total switching energy per cycle, used to calculate switching losses at target f_sw

Pinout & Package

STGW25H120F2 uses the TO-247 package with isolated tab (collector-connected). The case is electrically tied to the collector terminal, requiring insulated mounting hardware in high-side configurations.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate	Controls IGBT turn-on/off; requires ±20 V max drive voltage and 100 nC total charge
C (Pin 2 + Tab)	Collector	Main high-side power terminal; tab must be electrically isolated from heatsink unless referenced to system ground
E (Pin 3)	Emitter	Low-side reference node; serves as return path for gate drive and sense circuits

Key Features

Feature	Design Value
High-speed switching series	Enables >20 kHz operation in solar inverters while maintaining <1.3 mJ total switching energy
Minimized tail current	Reduces turn-off losses and di/dt-induced voltage overshoot in hard-switched topologies
Safe paralleling capability	Enabled by positive V_CE(sat) tempco and tight parameter spread - no external emitter resistors required
175 °C max junction temperature	Supports compact thermal designs in space-constrained UPS and welding equipment enclosures
5 µs short-circuit withstand	Allows time for controller-based fault response without destructive failure under V_CE = 600 V stress

Applications

Photovoltaic Inverters

Uninterruptible Power Supply

Use Scenario: Three-phase string inverters converting DC from solar arrays to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side IGBT in NPC or T-type multilevel topology handling 1000 V DC-link switching.

Use Value: 2.1 V V_CE(sat) and 1.3 mJ E_ts enable >98.5% peak efficiency at 16 kHz switching frequency.

Use Scenario: Online double-conversion UPS systems providing seamless backup during grid failure.

IC Role / Device Role / Timing Role: Inverter-stage switch managing battery-to-AC conversion with fast transient response.

Use Value: 5 µs short-circuit rating ensures reliable operation during load faults without cascading failure.

Welding Equipment

Power Factor Correction

Use Scenario: IGBT-based inverter welders delivering controlled high-current pulses for arc stability.

IC Role / Device Role / Timing Role: Primary switching element in resonant or hard-switched DC-DC stage regulating output current.

Use Value: 100 A pulsed current rating and 175 °C T_J support intermittent 300% overload without derating.

Use Scenario: Active front-end rectifiers in industrial motor drives correcting input power factor to >0.99.

IC Role / Device Role / Timing Role: Boost switch in three-phase Vienna or boost PFC topology operating at 15–25 kHz.

Use Value: Low C_res (49 pF) and fast t_f (106 ns) minimize switching losses during high-duty-cycle operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N120B3	1200 V / 50 A rated; higher I_C but larger Q_g (160 nC) and slower t_d(off) (180 ns)	Better suited for lower-frequency, higher-current PFC where gate drive loss is secondary	Select when system prioritizes current headroom over switching speed and thermal density
Infineon IKW25N120T2	1200 V / 25 A; lower V_CE(sat) (1.95 V) but reduced t_sc (3 µs) and higher R_thJC (0.55 °C/W)	Preferred in thermally relaxed designs where conduction loss dominates over short-circuit robustness	Select when heatsink capacity is ample and fault-clearing time is guaranteed below 3 µs

Compared with IXGN50N120B3 and IKW25N120T2, STGW25H120F2 offers the best trade-off for high-frequency, thermally constrained applications - delivering lowest E_ts (1.3 mJ), shortest t_sc (5 µs), and tightest thermal resistance (0.4 °C/W) among the three.

Availability

STGW25H120F2 is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supply systems, and welding equipment requiring stable component supply across multi-year production cycles.

Supply support for STGW25H120F2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

This device belongs to ST's H-series IGBT portfolio, engineered specifically for high-efficiency, high-frequency power conversion in renewable energy and industrial motor control systems.

FAQ

What gate resistor value is recommended for STGW25H120F2 in a 16 kHz solar inverter?

A 10 Ω gate resistor is validated in the datasheet for 600 V, 25 A inductive switching - yielding t_d(on) = 29 ns and t_d(off) = 130 ns. For 16 kHz operation, this value balances switching loss, EMI, and dv/dt control. Lower values (e.g., 5 Ω) reduce losses but increase EMI risk; higher values (e.g., 22 Ω) improve noise immunity at the cost of 30% higher E_off.

Does STGW25H120F2 include an integrated anti-parallel diode?

No - STGW25H120F2 is a discrete IGBT die in TO-247 package without an integrated freewheeling diode. External ultrafast diodes (e.g., STTH30L06D) must be used in bridge configurations. The datasheet confirms diode characteristics are not specified, and Figure 23 explicitly shows separate diode test setup.

Can STGW25H120F2 be paralleled without emitter resistors?

Yes - its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% V_CE(sat)) enable stable current sharing. ST's application note AN4765 confirms emitter resistors are unnecessary for ≤2 devices in parallel when gate drive layout is symmetrical and thermal coupling is uniform.

What is the maximum allowable case temperature for continuous 25 A operation?

The datasheet specifies I_C = 25 A at T_C = 100 °C (Table 1). Exceeding this case temperature violates absolute maximum ratings - even at reduced current, junction temperature must stay ≤175 °C. With R_thJC = 0.4 °C/W and P_tot ≈ 52.5 W (V_CE(sat) × I_C), T_C must remain ≤90 °C for 15 °C safety margin.

STGW25H120F2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 100 A

Vce(on) (Max) @ Vge, Ic:: 2.6V @ 15V, 25A

Power - Max:: 375 W

Switching Energy:: 600µJ (on), 700µJ (off)

Input Type:: Standard

Gate Charge:: 100 nC

Td (on/off) @ 25°C:: 29ns/130ns

Test Condition:: 600V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STGW25H120F2 FAQ

1.How can I place an order for STGW25H120F2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGW25H120F2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGW25H120F2 reliable?

The price and inventory of STGW25H120F2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGW25H120F2 is usually 5 days.

3.What payment methods are accepted for STGW25H120F2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGW25H120F2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGW25H120F2?

STGW25H120F2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGW25H120F2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGW25H120F2?

For technical support, including STGW25H120F2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGW25H120F2 requirements.

6.How does Aetrix verify that STGW25H120F2 is sourced from the original manufacturer or authorized distributors?

All STGW25H120F2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGW25H120F2 meets industry standards.

7.What is the process for return or replacement of STGW25H120F2?

All STGW25H120F2 units undergo pre-shipment inspection (PSI). If there is an issue with STGW25H120F2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGW25H120F2 part is unused and in its original packaging.

Return procedure for STGW25H120F2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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